JP5082064B2 - ２コンポーネント検出器、ｘ線照射検出器、フォトダイオード検出器アレイの回路ダイを遮蔽する方法 - Google Patents

２コンポーネント検出器、ｘ線照射検出器、フォトダイオード検出器アレイの回路ダイを遮蔽する方法 Download PDF

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JP5082064B2
JP5082064B2 JP2009519593A JP2009519593A JP5082064B2 JP 5082064 B2 JP5082064 B2 JP 5082064B2 JP 2009519593 A JP2009519593 A JP 2009519593A JP 2009519593 A JP2009519593 A JP 2009519593A JP 5082064 B2 JP5082064 B2 JP 5082064B2
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substrate
shield
photodiode
detector
circuit die
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JP2009544011A (ja
JP2009544011A5 (enExample
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ソーン、ショーン
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エアロフレックス コロラド スプリングス インコーポレイテッド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/2019—Shielding against direct hits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
JP2009519593A 2006-07-11 2007-07-03 ２コンポーネント検出器、ｘ線照射検出器、フォトダイオード検出器アレイの回路ダイを遮蔽する方法 Expired - Fee Related JP5082064B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/456,662 2006-07-11
US11/456,662 US7504637B2 (en) 2006-07-11 2006-07-11 Two component photodiode detector
PCT/US2007/072780 WO2008082689A1 (en) 2006-07-11 2007-07-03 Two component photodiode detector

Publications (3)

Publication Number Publication Date
JP2009544011A JP2009544011A (ja) 2009-12-10
JP2009544011A5 JP2009544011A5 (enExample) 2010-04-15
JP5082064B2 true JP5082064B2 (ja) 2012-11-28

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JP2009519593A Expired - Fee Related JP5082064B2 (ja) 2006-07-11 2007-07-03 ２コンポーネント検出器、ｘ線照射検出器、フォトダイオード検出器アレイの回路ダイを遮蔽する方法

Country Status (5)

Country Link
US (1) US7504637B2 (enExample)
EP (1) EP2041605B1 (enExample)
JP (1) JP5082064B2 (enExample)
IL (1) IL196436A (enExample)
WO (1) WO2008082689A1 (enExample)

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* Cited by examiner, † Cited by third party
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US7535033B2 (en) * 2004-09-14 2009-05-19 Banpil Photonics, Inc. Multicolor photodiode array and method of manufacturing
JP2007258199A (ja) * 2006-03-20 2007-10-04 Nec Electronics Corp 撮像素子
KR101441630B1 (ko) * 2008-02-12 2014-09-23 삼성디스플레이 주식회사 엑스레이 검출기 및 이의 제조방법
RU2505840C2 (ru) * 2008-11-18 2014-01-27 Конинклейке Филипс Электроникс Н.В. Детектор спектральной визуализации
DE102010011582B4 (de) * 2010-03-16 2011-12-01 Siemens Aktiengesellschaft Detektormodul für einen Strahlendetektor und Strahlendetektor
EP2671097B1 (en) 2011-02-03 2016-10-19 Koninklijke Philips N.V. Single or multi-energy vertical radiation sensitive detectors
US8829454B2 (en) 2012-02-27 2014-09-09 Analog Devices, Inc. Compact sensor module
US9116022B2 (en) 2012-12-07 2015-08-25 Analog Devices, Inc. Compact sensor module
US20140348290A1 (en) * 2013-05-23 2014-11-27 General Electric Company Apparatus and Method for Low Capacitance Packaging for Direct Conversion X-Ray or Gamma Ray Detector
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
CN107003417B (zh) * 2014-10-20 2019-06-21 模拟技术公司 用于辐射成像模态装置的探测器阵列的探测器单元
DE102014222690B4 (de) * 2014-11-06 2024-10-02 Siemens Healthineers Ag Detektormodul für einen Röntgendetektor
JP6285577B2 (ja) * 2015-01-15 2018-02-28 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 撮像検出器モジュールアセンブリ
JP6559977B2 (ja) * 2015-03-05 2019-08-14 キヤノンメディカルシステムズ株式会社 検出器パック、ｘ線ｃｔ装置
US9835733B2 (en) * 2015-04-30 2017-12-05 Zhengrong Ying Apparatus for detecting X-rays
US10074624B2 (en) 2015-08-07 2018-09-11 Analog Devices, Inc. Bond pads with differently sized openings
US11156727B2 (en) * 2015-10-02 2021-10-26 Varian Medical Systems, Inc. High DQE imaging device
US11056455B2 (en) 2017-08-01 2021-07-06 Analog Devices, Inc. Negative fillet for mounting an integrated device die to a carrier
CN113228272B (zh) 2018-12-06 2025-02-28 美国亚德诺半导体公司 具有无源器件组件的集成器件封装
WO2020118102A1 (en) 2018-12-06 2020-06-11 Analog Devices, Inc. Shielded integrated device packages
US11664340B2 (en) 2020-07-13 2023-05-30 Analog Devices, Inc. Negative fillet for mounting an integrated device die to a carrier
CN116250085A (zh) * 2020-11-13 2023-06-09 Ams-欧司朗有限公司 用于检测x射线辐射的模块组件
JP7724238B2 (ja) * 2020-11-25 2025-08-15 浜松ホトニクス株式会社 撮像ユニット及び撮像システム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957803B2 (ja) * 1996-02-22 2007-08-15 キヤノン株式会社 光電変換装置
JP4532782B2 (ja) * 2000-07-04 2010-08-25 キヤノン株式会社 放射線撮像装置及びシステム
JP2003084066A (ja) * 2001-04-11 2003-03-19 Nippon Kessho Kogaku Kk 放射線検出器用部品、放射線検出器および放射線検出装置
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
JP4133429B2 (ja) * 2003-02-24 2008-08-13 浜松ホトニクス株式会社 半導体装置
JP4364514B2 (ja) * 2003-01-08 2009-11-18 浜松ホトニクス株式会社 配線基板、及びそれを用いた放射線検出器
JP4421209B2 (ja) * 2003-04-11 2010-02-24 浜松ホトニクス株式会社 放射線検出器

Also Published As

Publication number Publication date
US7504637B2 (en) 2009-03-17
EP2041605A1 (en) 2009-04-01
JP2009544011A (ja) 2009-12-10
US20080011959A1 (en) 2008-01-17
IL196436A0 (en) 2009-09-22
WO2008082689A8 (en) 2009-02-26
WO2008082689A1 (en) 2008-07-10
EP2041605B1 (en) 2014-04-30
IL196436A (en) 2013-05-30
EP2041605A4 (en) 2012-01-18

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