JP5081959B2 - 酸化物焼結体及び酸化物半導体薄膜 - Google Patents

酸化物焼結体及び酸化物半導体薄膜 Download PDF

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Publication number
JP5081959B2
JP5081959B2 JP2010194455A JP2010194455A JP5081959B2 JP 5081959 B2 JP5081959 B2 JP 5081959B2 JP 2010194455 A JP2010194455 A JP 2010194455A JP 2010194455 A JP2010194455 A JP 2010194455A JP 5081959 B2 JP5081959 B2 JP 5081959B2
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oxide
sintered body
thin film
oxide semiconductor
indium
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JP2012054335A5 (enExample
JP2012054335A (ja
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英生 高見
幸三 長田
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Priority to JP2010194455A priority Critical patent/JP5081959B2/ja
Priority to PCT/JP2011/067133 priority patent/WO2012029455A1/ja
Priority to KR1020137007631A priority patent/KR101331293B1/ko
Priority to TW100128488A priority patent/TWI405863B/zh
Publication of JP2012054335A publication Critical patent/JP2012054335A/ja
Publication of JP2012054335A5 publication Critical patent/JP2012054335A5/ja
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2010194455A 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜 Active JP5081959B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010194455A JP5081959B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜
PCT/JP2011/067133 WO2012029455A1 (ja) 2010-08-31 2011-07-27 酸化物焼結体及び酸化物半導体薄膜
KR1020137007631A KR101331293B1 (ko) 2010-08-31 2011-07-27 산화물 소결체 및 산화물 반도체 박막
TW100128488A TWI405863B (zh) 2010-08-31 2011-08-10 Oxide sintered body and oxide semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010194455A JP5081959B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜

Publications (3)

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JP2012054335A JP2012054335A (ja) 2012-03-15
JP2012054335A5 JP2012054335A5 (enExample) 2012-08-23
JP5081959B2 true JP5081959B2 (ja) 2012-11-28

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JP (1) JP5081959B2 (enExample)
KR (1) KR101331293B1 (enExample)
TW (1) TWI405863B (enExample)
WO (1) WO2012029455A1 (enExample)

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CN103270602A (zh) * 2010-12-28 2013-08-28 株式会社神户制钢所 薄膜晶体管的半导体层用氧化物及溅射靶材，以及薄膜晶体管
CN103608310B (zh) * 2011-06-15 2016-02-03 住友电气工业株式会社 导电性氧化物及其制造方法以及氧化物半导体膜
CN102779758B (zh) * 2012-07-24 2015-07-29 复旦大学 一种以铟锌铝氧化物为沟道层的薄膜晶体管的制备方法
JP6052967B2 (ja) * 2012-08-31 2016-12-27 出光興産株式会社 スパッタリングターゲット
JP6188712B2 (ja) * 2012-11-08 2017-08-30 出光興産株式会社 スパッタリングターゲット
JP5968462B2 (ja) * 2013-10-24 2016-08-10 Ｊｘ金属株式会社 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法
KR102106366B1 (ko) * 2015-11-25 2020-05-04 가부시키가이샤 아루박 박막 트랜지스터, 산화물 반도체막 및 스퍼터링 타겟

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JP3947575B2 (ja) * 1994-06-10 2007-07-25 Ｈｏｙａ株式会社 導電性酸化物およびそれを用いた電極
JP3589519B2 (ja) * 1995-11-30 2004-11-17 出光興産株式会社 タッチパネル
JP3881407B2 (ja) * 1996-07-31 2007-02-14 Ｈｏｙａ株式会社 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法
CN101911303B (zh) * 2007-12-25 2013-03-27 出光兴产株式会社 氧化物半导体场效应晶体管及其制造方法
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP4555358B2 (ja) * 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
JP2009253204A (ja) * 2008-04-10 2009-10-29 Idemitsu Kosan Co Ltd 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP5218032B2 (ja) * 2008-12-25 2013-06-26 東ソー株式会社 透明導電膜用焼結体の製造方法

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TW201213579A (en) 2012-04-01
KR20130041365A (ko) 2013-04-24
TWI405863B (zh) 2013-08-21
JP2012054335A (ja) 2012-03-15
KR101331293B1 (ko) 2013-11-20
WO2012029455A1 (ja) 2012-03-08

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