JP5078239B2 - レーザ照射方法及びレーザ照射装置、並びに非単結晶を結晶化する方法及び半導体装置を作製する方法 - Google Patents

レーザ照射方法及びレーザ照射装置、並びに非単結晶を結晶化する方法及び半導体装置を作製する方法 Download PDF

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JP5078239B2
JP5078239B2 JP2005178560A JP2005178560A JP5078239B2 JP 5078239 B2 JP5078239 B2 JP 5078239B2 JP 2005178560 A JP2005178560 A JP 2005178560A JP 2005178560 A JP2005178560 A JP 2005178560A JP 5078239 B2 JP5078239 B2 JP 5078239B2
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laser beam
laser
dichroic mirror
irradiation
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JP2006032937A (ja
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幸一郎 田中
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2005178560A 2004-06-18 2005-06-17 レーザ照射方法及びレーザ照射装置、並びに非単結晶を結晶化する方法及び半導体装置を作製する方法 Expired - Fee Related JP5078239B2 (ja)

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JP2005178560A JP5078239B2 (ja) 2004-06-18 2005-06-17 レーザ照射方法及びレーザ照射装置、並びに非単結晶を結晶化する方法及び半導体装置を作製する方法

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JP2004180574 2004-06-18
JP2004180574 2004-06-18
JP2005178560A JP5078239B2 (ja) 2004-06-18 2005-06-17 レーザ照射方法及びレーザ照射装置、並びに非単結晶を結晶化する方法及び半導体装置を作製する方法

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JP2006032937A5 JP2006032937A5 (https=) 2008-07-17
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Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
JP2007242895A (ja) * 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
KR20090084930A (ko) * 2006-11-10 2009-08-05 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 아포크로매틱 렌즈 및 광 분리 수단을 사용하는 매체 상에서의 광학 데이터 기록 및 이미지화
JP2010509706A (ja) * 2006-11-10 2010-03-25 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. アポクロマートレンズを利用した媒体上での光データ記録及び画像形成
KR100778316B1 (ko) * 2006-12-19 2007-11-22 (주)티원프리시젼 레이저를 이용한 액정패널의 흑화장치 및 방법
US20080206897A1 (en) * 2007-02-27 2008-08-28 Woo Sik Yoo Selective Depth Optical Processing
KR101657185B1 (ko) * 2009-12-18 2016-09-19 동우 화인켐 주식회사 노광장치
JP2013055111A (ja) * 2011-09-01 2013-03-21 Phoeton Corp レーザ光合成装置、レーザアニール装置およびレーザアニール方法
CN103165422A (zh) * 2013-03-08 2013-06-19 上海和辉光电有限公司 以高能辐射源形成多晶硅的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3017277B2 (ja) * 1989-12-07 2000-03-06 株式会社リコー 光アニール装置
JP3221724B2 (ja) * 1992-05-13 2001-10-22 株式会社リコー 光アニール方法及び装置
JP2000058478A (ja) * 1998-08-05 2000-02-25 Toshiba Corp エキシマレーザアニール装置および半導体膜の製造方法
JP2001345284A (ja) * 2000-06-01 2001-12-14 Hitachi Ltd レーザアニールin−situ膜質評価装置
JP5201614B2 (ja) * 2001-07-23 2013-06-05 株式会社日本製鋼所 レーザ光の照射方法及びその装置
JP4009114B2 (ja) * 2002-02-06 2007-11-14 株式会社リコー レーザ光学装置

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