JP5075193B2 - イオン注入装置およびその方法 - Google Patents

イオン注入装置およびその方法 Download PDF

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Publication number
JP5075193B2
JP5075193B2 JP2009502884A JP2009502884A JP5075193B2 JP 5075193 B2 JP5075193 B2 JP 5075193B2 JP 2009502884 A JP2009502884 A JP 2009502884A JP 2009502884 A JP2009502884 A JP 2009502884A JP 5075193 B2 JP5075193 B2 JP 5075193B2
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Japan
Prior art keywords
energy
scanning frequency
frequency
ion beam
threshold
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JP2009502884A
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English (en)
Japanese (ja)
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JP2009531831A5 (enExample
JP2009531831A (ja
Inventor
シー． オルソン、ジョセフ
エバンス、モーガン
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JP2009531831A5 publication Critical patent/JP2009531831A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H10P30/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
JP2009502884A 2006-03-27 2007-03-23 イオン注入装置およびその方法 Active JP5075193B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/390,518 2006-03-27
US11/390,518 US7358510B2 (en) 2006-03-27 2006-03-27 Ion implanter with variable scan frequency
PCT/US2007/007224 WO2007111991A2 (en) 2006-03-27 2007-03-23 Ion implanter with variable scan frequency

Publications (3)

Publication Number Publication Date
JP2009531831A JP2009531831A (ja) 2009-09-03
JP2009531831A5 JP2009531831A5 (enExample) 2010-05-13
JP5075193B2 true JP5075193B2 (ja) 2012-11-14

Family

ID=38532387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009502884A Active JP5075193B2 (ja) 2006-03-27 2007-03-23 イオン注入装置およびその方法

Country Status (6)

Country Link
US (1) US7358510B2 (enExample)
JP (1) JP5075193B2 (enExample)
KR (1) KR101440413B1 (enExample)
CN (1) CN101410929B (enExample)
TW (1) TWI413999B (enExample)
WO (1) WO2007111991A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法
US9490185B2 (en) 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
EP2779205B1 (en) * 2013-03-15 2017-10-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High throughput scan deflector and method of manufacturing thereof
US10483086B2 (en) * 2014-12-26 2019-11-19 Axcelis Technologies, Inc. Beam profiling speed enhancement for scanned beam implanters
JP6689544B2 (ja) * 2016-09-06 2020-04-28 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9905396B1 (en) * 2016-10-18 2018-02-27 Varian Semiconductor Equipment Associates, Inc. Curved post scan electrode
US10770261B2 (en) 2017-12-14 2020-09-08 Varian Semiconductor Equipment Associates, Inc. System and method to monitor glitch energy
WO2020073218A1 (en) * 2018-10-10 2020-04-16 Applied Materials, Inc. Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US5418378A (en) * 1994-03-14 1995-05-23 Advanced Micro Devices Ion implant device with modulated scan output
JPH0896744A (ja) * 1994-09-27 1996-04-12 Hitachi Ltd イオン注入装置
JPH08167398A (ja) * 1994-12-02 1996-06-25 Hitachi Ltd イオン注入装置
US6075249A (en) 1998-06-19 2000-06-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanning and focusing an ion beam
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
JP3341749B2 (ja) 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
AU2001293294A1 (en) 2000-09-20 2002-04-02 Fei Company Real time monitoring for simultaneous imaging and exposure in charged particle beam systems
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US6710359B2 (en) * 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
JP3892360B2 (ja) 2002-07-30 2007-03-14 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US6992309B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Ion beam measurement systems and methods for ion implant dose and uniformity control

Also Published As

Publication number Publication date
KR20080106966A (ko) 2008-12-09
WO2007111991A3 (en) 2008-01-24
KR101440413B1 (ko) 2014-09-15
TW200809904A (en) 2008-02-16
US20070221872A1 (en) 2007-09-27
TWI413999B (zh) 2013-11-01
CN101410929B (zh) 2010-07-28
CN101410929A (zh) 2009-04-15
WO2007111991A2 (en) 2007-10-04
JP2009531831A (ja) 2009-09-03
US7358510B2 (en) 2008-04-15

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