CN101410929B - 具有可变扫描频率的离子植入机 - Google Patents

具有可变扫描频率的离子植入机 Download PDF

Info

Publication number
CN101410929B
CN101410929B CN2007800108014A CN200780010801A CN101410929B CN 101410929 B CN101410929 B CN 101410929B CN 2007800108014 A CN2007800108014 A CN 2007800108014A CN 200780010801 A CN200780010801 A CN 200780010801A CN 101410929 B CN101410929 B CN 101410929B
Authority
CN
China
Prior art keywords
frequency
energy
scanning frequency
ion beam
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800108014A
Other languages
English (en)
Chinese (zh)
Other versions
CN101410929A (zh
Inventor
约瑟·C·欧尔森
摩根·艾文斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN101410929A publication Critical patent/CN101410929A/zh
Application granted granted Critical
Publication of CN101410929B publication Critical patent/CN101410929B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H10P30/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
CN2007800108014A 2006-03-27 2007-03-23 具有可变扫描频率的离子植入机 Active CN101410929B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/390,518 2006-03-27
US11/390,518 US7358510B2 (en) 2006-03-27 2006-03-27 Ion implanter with variable scan frequency
PCT/US2007/007224 WO2007111991A2 (en) 2006-03-27 2007-03-23 Ion implanter with variable scan frequency

Publications (2)

Publication Number Publication Date
CN101410929A CN101410929A (zh) 2009-04-15
CN101410929B true CN101410929B (zh) 2010-07-28

Family

ID=38532387

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800108014A Active CN101410929B (zh) 2006-03-27 2007-03-23 具有可变扫描频率的离子植入机

Country Status (6)

Country Link
US (1) US7358510B2 (enExample)
JP (1) JP5075193B2 (enExample)
KR (1) KR101440413B1 (enExample)
CN (1) CN101410929B (enExample)
TW (1) TWI413999B (enExample)
WO (1) WO2007111991A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法
US9490185B2 (en) 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
EP2779205B1 (en) * 2013-03-15 2017-10-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High throughput scan deflector and method of manufacturing thereof
US10483086B2 (en) * 2014-12-26 2019-11-19 Axcelis Technologies, Inc. Beam profiling speed enhancement for scanned beam implanters
JP6689544B2 (ja) * 2016-09-06 2020-04-28 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9905396B1 (en) * 2016-10-18 2018-02-27 Varian Semiconductor Equipment Associates, Inc. Curved post scan electrode
US10770261B2 (en) 2017-12-14 2020-09-08 Varian Semiconductor Equipment Associates, Inc. System and method to monitor glitch energy
WO2020073218A1 (en) * 2018-10-10 2020-04-16 Applied Materials, Inc. Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
CN1134819C (zh) * 1999-12-28 2004-01-14 日新电机株式会社 离子注入方法和离子注入设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US5418378A (en) * 1994-03-14 1995-05-23 Advanced Micro Devices Ion implant device with modulated scan output
JPH0896744A (ja) * 1994-09-27 1996-04-12 Hitachi Ltd イオン注入装置
JPH08167398A (ja) * 1994-12-02 1996-06-25 Hitachi Ltd イオン注入装置
US6075249A (en) 1998-06-19 2000-06-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanning and focusing an ion beam
AU2001293294A1 (en) 2000-09-20 2002-04-02 Fei Company Real time monitoring for simultaneous imaging and exposure in charged particle beam systems
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US6710359B2 (en) * 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
JP3892360B2 (ja) 2002-07-30 2007-03-14 エスアイアイ・ナノテクノロジー株式会社 イオンビーム装置
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US6992309B1 (en) * 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Ion beam measurement systems and methods for ion implant dose and uniformity control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
CN1134819C (zh) * 1999-12-28 2004-01-14 日新电机株式会社 离子注入方法和离子注入设备

Also Published As

Publication number Publication date
KR20080106966A (ko) 2008-12-09
WO2007111991A3 (en) 2008-01-24
KR101440413B1 (ko) 2014-09-15
TW200809904A (en) 2008-02-16
US20070221872A1 (en) 2007-09-27
TWI413999B (zh) 2013-11-01
JP5075193B2 (ja) 2012-11-14
CN101410929A (zh) 2009-04-15
WO2007111991A2 (en) 2007-10-04
JP2009531831A (ja) 2009-09-03
US7358510B2 (en) 2008-04-15

Similar Documents

Publication Publication Date Title
CN101410929B (zh) 具有可变扫描频率的离子植入机
JP5652583B2 (ja) ハイブリッド結合及び二重機械式走査構造を有するイオン注入システム及び方法
US8188445B2 (en) Ion source
CN101002294B (zh) 用于改进离子注入均匀性的离子束扫描系统和方法
US8330125B2 (en) Ion beam tuning
TWI797135B (zh) 具有在偏移和減速模態中的射束角度控制之離子佈植系統
CN101461028B (zh) 离子植入机的扫描图案
JP4730932B2 (ja) 広いダイナミックレンジのイオンビームスキャナー
CN104025247A (zh) 生产率及一致性提高的离子注入的系统及方法
JP4305801B2 (ja) イオンビームを走査しかつ集束するための方法および装置
CN107094371A (zh) 用于在具有束减速的离子注入器中进行束角度调整的系统和方法
CN103098167B (zh) 在光阻释气期间用于改进注入均匀性的方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant