JP5074540B2 - 音響共振器 - Google Patents
音響共振器 Download PDFInfo
- Publication number
- JP5074540B2 JP5074540B2 JP2010019112A JP2010019112A JP5074540B2 JP 5074540 B2 JP5074540 B2 JP 5074540B2 JP 2010019112 A JP2010019112 A JP 2010019112A JP 2010019112 A JP2010019112 A JP 2010019112A JP 5074540 B2 JP5074540 B2 JP 5074540B2
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- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- substrate
- molybdenum
- primer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 35
- 239000011733 molybdenum Substances 0.000 claims description 33
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 11
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 229910052754 neon Inorganic materials 0.000 claims description 7
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 description 46
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 40
- 238000000151 deposition Methods 0.000 description 20
- 229910052719 titanium Inorganic materials 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 229910052743 krypton Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003389 potentiating effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004479 Ta2N Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Description
それ故に、本発明の一つの特徴において、以下を含む音響共振器が提供される。それは、
基材、
該基材上に、直接または一層以上の中間層の上に設けられた少なくとも一層のほぼ結晶性のプライマー層(primer layer)、
該プライマー層上に設けられたほぼ滑らかでほぼ結晶性の電極層、
および
該電極層上に設けられた圧電体層
であり、
(i)該プライマー層の少なくとも一層が、第一の結晶系(system)に属する結晶学的構造を有し、
(ii)該電極層が、該第一の結晶系とは異なる第二の結晶系に属する結晶学的構造を有し、かつ
(iii)少なくとも一つの方位(orientation)において、該プライマー層の少なくとも一層の原子間隔と該電極層の原子間隔とが、約15%以内にマッチする
ことを特徴とする。
基材、
該基材上に、直接または一層以上の中間層の上に設けられた少なくとも一層のほぼ結晶性のプライマー層、
該プライマー層上に設けられたほぼ滑らかでほぼ結晶性の電極層、
および
該電極層上に設けられた圧電体層
を含み、
(vi)プライマー層の少なくとも一層が、第一の結晶系に属する結晶学的構造を有し、
(vii)該電極層が、該第一の結晶系とは異なる第二の結晶系に属する結晶学的構造を有し、かつ
(viii)少なくとも一つの方位において、該プライマー層または少なくとも該電極と接するプライマー層の原子間隔と該電極層の原子間隔とが、約15%以内にマッチする
ことを特徴とする。
プライマー層を堆積させる工程、
該プライマー層の上部表面上にモリブデンを含んでいる電極層を堆積させる工程、
および
最上部電極層上に圧電体物質の層を堆積させる工程
であって、該プライマー層が、少なくとも一つの方位において、ほぼ結晶性の物質を含み、その原子間隔が該電極層の原子間隔と約15%以内にマッチし、かつ立方晶形態のものではないことを特徴とする。
基材、
該基材上に直接または該基材上の一層以上の中間層上に間接的に設けられたモリブデンを含む電極層、および
該電極層上に設けられた圧電体物質の層
であり、該モリブデン電極層は主にネオン・スパッタリング・プロセスにより堆積し、かつ電極層は水素プラズマで処理されることを特徴とする。
基材上に直接または基材上の一層以上の中間層上に間接的にモリブデンを含む電極層を設けるために、ネオン・スパッタリング・プロセスおよびモリブデンターゲットを用いる工程、
水素プラズマで該電極層を処理する工程、および
該電極層上に圧電体物質の層を設ける工程
である。
圧電体物質は、都合よくは、窒化アルミニウムを含んでよい。
本発明は上述されたとはいえ、それは、説明または後に添付の請求項に記載されるいかなる発明の組み合わせにも適用される。
本発明は、種々の様式(way)で実行されてよく、そして、特定の実施態様は、実施例を通して、添付の図1〜3を参照して、ここに記述される。
Claims (11)
- 主にネオン・スパッタリング・プロセスおよびモリブデンまたはタングステンのターゲットを用いて、基材上に直接または基材上の一層以上の中間層上に間接的にモリブデンまたはタングステンを含む電極層を設ける工程、
水素プラズマで該電極層を処理する工程、および
該電極層上に圧電体物質の層を設ける工程
を含む音響共振器を形成する方法。 - 前記圧電体物質は、窒化アルミニウム(AlN)を含むことを特徴とする、請求項1に記載された方法。
- 前記水素プラズマ処理は、平行平板型反応器を用いて行われることを特徴とする、請求項1または請求項2に記載された方法。
- 前記水素プラズマ処理は、約0.5Torrを超える水素圧力中で行われることを特徴とする、請求項3に記載された方法。
- 前記水素プラズマ処理は、高周波数を用いて行われることを特徴とする、請求項3または請求項4に記載された方法。
- 前記水素プラズマ処理は、200mm直径の基材に対し約0.5KW(1.6ワット/cm2)を超える電力で行われることを特徴とする、請求項3〜5のいずれか一項に記載された方法。
- モリブデンまたはタングステンの前記電極層を設ける前に、プライマー層が前記基材上に設けられ、該プライマー層は前記電極層の原子間隔定数と約15%以内にマッチする原子間隔定数を有するほぼ結晶性の物質を含み、かつ立方晶形態のものでないことを特徴とする、請求項3〜6のいずれか一項に記載された方法。
- 前記電極層は、ロングスロー・スパッター・チャンバーを用いて堆積することを特徴とする、請求項1〜7のいずれか一項に記載された方法。
- ターゲットから基材迄の距離は、400〜450mmであることを特徴とする、請求項8に記載された方法。
- 前記チャンバーは、イオン化を高める磁気閉じ込めコイルを含んでいることを特徴とする、請求項8または請求項9に記載された方法。
- スパッタリングされたターゲット物質のうち、その20%より多くがイオン化されることを特徴とする、請求項8または請求項9に記載された方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40272802P | 2002-08-13 | 2002-08-13 | |
GB0218762.3 | 2002-08-13 | ||
GB0218762A GB0218762D0 (en) | 2002-08-13 | 2002-08-13 | Acoustic resonators |
US60/402,728 | 2002-08-13 | ||
GB0227981.8 | 2002-11-30 | ||
GB0227981A GB0227981D0 (en) | 2002-11-30 | 2002-11-30 | Acoustic resonators |
Related Parent Applications (1)
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---|---|---|---|
JP2004527057A Division JP5116945B2 (ja) | 2002-08-13 | 2003-08-11 | 音響共振器 |
Publications (2)
Publication Number | Publication Date |
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JP2010161781A JP2010161781A (ja) | 2010-07-22 |
JP5074540B2 true JP5074540B2 (ja) | 2012-11-14 |
Family
ID=31721069
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2004527057A Expired - Lifetime JP5116945B2 (ja) | 2002-08-13 | 2003-08-11 | 音響共振器 |
JP2010019112A Expired - Lifetime JP5074540B2 (ja) | 2002-08-13 | 2010-01-29 | 音響共振器 |
Family Applications Before (1)
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JP2004527057A Expired - Lifetime JP5116945B2 (ja) | 2002-08-13 | 2003-08-11 | 音響共振器 |
Country Status (5)
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---|---|
JP (2) | JP5116945B2 (ja) |
AU (1) | AU2003252992A1 (ja) |
DE (1) | DE10393038B4 (ja) |
GB (1) | GB2406582A (ja) |
WO (1) | WO2004015862A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6944922B2 (en) * | 2002-08-13 | 2005-09-20 | Trikon Technologies Limited | Method of forming an acoustic resonator |
JP5983164B2 (ja) * | 2012-08-07 | 2016-08-31 | 旭硝子株式会社 | Ti膜付きガラス基板及びこれを用いた金属膜付きガラス基板、Ti膜付きガラス基板及びこれを用いた金属膜付きガラス基板の製造方法、ならびにガラス基板表面の平坦度評価方法 |
CN104767500B (zh) * | 2014-01-03 | 2018-11-09 | 佛山市艾佛光通科技有限公司 | 空腔型薄膜体声波谐振器及其制备方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4482833A (en) * | 1981-04-01 | 1984-11-13 | Westinghouse Electric Corp. | Method for obtaining oriented gold and piezoelectric films |
US4502932A (en) * | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
JPS61170561A (ja) * | 1985-01-25 | 1986-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 高融点金属膜形成方法 |
JP2659394B2 (ja) * | 1988-05-09 | 1997-09-30 | 三井東圧化学株式会社 | 半導体薄膜の製造方法 |
KR960000190B1 (ko) * | 1992-11-09 | 1996-01-03 | 엘지전자주식회사 | 반도체 제조방법 및 그 장치 |
US5587620A (en) * | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
JPH10308393A (ja) * | 1997-05-02 | 1998-11-17 | Tokyo Electron Ltd | 半導体装置の製造方法および製造装置 |
JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
US6060818A (en) * | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
JP2000160337A (ja) * | 1998-11-30 | 2000-06-13 | Hitachi Ltd | マグネトロンスパッタ装置 |
JP2000273629A (ja) * | 1999-03-18 | 2000-10-03 | Ulvac Japan Ltd | 低抵抗金属薄膜の形成方法 |
GB2349392B (en) * | 1999-04-20 | 2003-10-22 | Trikon Holdings Ltd | A method of depositing a layer |
JP4327942B2 (ja) * | 1999-05-20 | 2009-09-09 | Tdk株式会社 | 薄膜圧電素子 |
US6349454B1 (en) * | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
JP4021601B2 (ja) * | 1999-10-29 | 2007-12-12 | 株式会社東芝 | スパッタ装置および成膜方法 |
JP2001313429A (ja) * | 2000-04-27 | 2001-11-09 | Tdk Corp | 積層薄膜その製造方法および電子デバイス |
AU2001272643A1 (en) * | 2000-07-27 | 2002-02-13 | Stephen Robert Burgess | Magnetron sputtering |
JP4016583B2 (ja) * | 2000-08-31 | 2007-12-05 | 株式会社村田製作所 | 圧電薄膜共振子、フィルタおよび電子機器 |
US6377137B1 (en) * | 2000-09-11 | 2002-04-23 | Agilent Technologies, Inc. | Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness |
JP2002374145A (ja) * | 2001-06-15 | 2002-12-26 | Ube Electronics Ltd | 圧電薄膜共振子 |
US6828713B2 (en) * | 2002-07-30 | 2004-12-07 | Agilent Technologies, Inc | Resonator with seed layer |
US20040021529A1 (en) * | 2002-07-30 | 2004-02-05 | Bradley Paul D. | Resonator with protective layer |
-
2003
- 2003-08-11 WO PCT/GB2003/003504 patent/WO2004015862A2/en active Application Filing
- 2003-08-11 AU AU2003252992A patent/AU2003252992A1/en not_active Abandoned
- 2003-08-11 GB GB0501682A patent/GB2406582A/en not_active Withdrawn
- 2003-08-11 DE DE10393038T patent/DE10393038B4/de not_active Expired - Lifetime
- 2003-08-11 JP JP2004527057A patent/JP5116945B2/ja not_active Expired - Lifetime
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2010
- 2010-01-29 JP JP2010019112A patent/JP5074540B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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JP5116945B2 (ja) | 2013-01-09 |
GB0501682D0 (en) | 2005-03-02 |
WO2004015862A3 (en) | 2004-10-14 |
JP2005536098A (ja) | 2005-11-24 |
AU2003252992A1 (en) | 2004-02-25 |
DE10393038T5 (de) | 2005-07-28 |
DE10393038B4 (de) | 2013-11-07 |
JP2010161781A (ja) | 2010-07-22 |
WO2004015862A2 (en) | 2004-02-19 |
GB2406582A (en) | 2005-04-06 |
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