WO2004015862A3 - Acoustic resonators - Google Patents

Acoustic resonators Download PDF

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Publication number
WO2004015862A3
WO2004015862A3 PCT/GB2003/003504 GB0303504W WO2004015862A3 WO 2004015862 A3 WO2004015862 A3 WO 2004015862A3 GB 0303504 W GB0303504 W GB 0303504W WO 2004015862 A3 WO2004015862 A3 WO 2004015862A3
Authority
WO
WIPO (PCT)
Prior art keywords
primer
layer
electrode
layers
substrate
Prior art date
Application number
PCT/GB2003/003504
Other languages
French (fr)
Other versions
WO2004015862A2 (en
Inventor
Christine Janet Shearer
Carl Brancher
Rajkumar Jakkaraju
Original Assignee
Trikon Technologies Ltd
Christine Janet Shearer
Carl Brancher
Rajkumar Jakkaraju
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0218762A external-priority patent/GB0218762D0/en
Priority claimed from GB0227981A external-priority patent/GB0227981D0/en
Application filed by Trikon Technologies Ltd, Christine Janet Shearer, Carl Brancher, Rajkumar Jakkaraju filed Critical Trikon Technologies Ltd
Priority to AU2003252992A priority Critical patent/AU2003252992A1/en
Priority to GB0501682A priority patent/GB2406582A/en
Priority to JP2004527057A priority patent/JP5116945B2/en
Priority to DE10393038T priority patent/DE10393038B4/en
Publication of WO2004015862A2 publication Critical patent/WO2004015862A2/en
Publication of WO2004015862A3 publication Critical patent/WO2004015862A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49005Acoustic transducer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • Y10T29/49156Manufacturing circuit on or in base with selective destruction of conductive paths

Abstract

An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of the said primer layers and that of the electrode matches to within about 15 %.
PCT/GB2003/003504 2002-08-13 2003-08-11 Acoustic resonators WO2004015862A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003252992A AU2003252992A1 (en) 2002-08-13 2003-08-11 Acoustic resonators
GB0501682A GB2406582A (en) 2002-08-13 2003-08-11 Acoustic resonators
JP2004527057A JP5116945B2 (en) 2002-08-13 2003-08-11 Acoustic resonator
DE10393038T DE10393038B4 (en) 2002-08-13 2003-08-11 Acoustic resonator, as well as its production and selection process for a primary or base layer with crystallographic structure

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US40272802P 2002-08-13 2002-08-13
GB0218762A GB0218762D0 (en) 2002-08-13 2002-08-13 Acoustic resonators
GB0218762.3 2002-08-13
US60/402,728 2002-08-13
GB0227981.8 2002-11-30
GB0227981A GB0227981D0 (en) 2002-11-30 2002-11-30 Acoustic resonators

Publications (2)

Publication Number Publication Date
WO2004015862A2 WO2004015862A2 (en) 2004-02-19
WO2004015862A3 true WO2004015862A3 (en) 2004-10-14

Family

ID=31721069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/003504 WO2004015862A2 (en) 2002-08-13 2003-08-11 Acoustic resonators

Country Status (5)

Country Link
JP (2) JP5116945B2 (en)
AU (1) AU2003252992A1 (en)
DE (1) DE10393038B4 (en)
GB (1) GB2406582A (en)
WO (1) WO2004015862A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6944922B2 (en) * 2002-08-13 2005-09-20 Trikon Technologies Limited Method of forming an acoustic resonator
JP5983164B2 (en) * 2012-08-07 2016-08-31 旭硝子株式会社 Glass substrate with Ti film, glass substrate with metal film using the same, glass substrate with Ti film, method for producing glass substrate with metal film using the same, and method for evaluating flatness of glass substrate surface
CN104767500B (en) * 2014-01-03 2018-11-09 佛山市艾佛光通科技有限公司 Cavity type thin film bulk acoustic wave resonator and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
EP0963040A2 (en) * 1998-06-02 1999-12-08 Hewlett-Packard Company Acoustic resonator and method for making the same
EP1054460A2 (en) * 1999-05-20 2000-11-22 TDK Corporation Thin film piezoelectric device for acoustic resonators
US20020006733A1 (en) * 2000-04-27 2002-01-17 Tdk Corporation Multilayer thin film and its fabrication process as well as electron device
GB2391408A (en) * 2002-07-30 2004-02-04 Agilent Technologies Inc FBAR thin-film resonator with protective layer
US20040021400A1 (en) * 2002-07-30 2004-02-05 Bradley Paul D. Resonator with seed layer

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US4482833A (en) * 1981-04-01 1984-11-13 Westinghouse Electric Corp. Method for obtaining oriented gold and piezoelectric films
US4502932A (en) * 1983-10-13 1985-03-05 The United States Of America As Represented By The United States Department Of Energy Acoustic resonator and method of making same
JPS61170561A (en) * 1985-01-25 1986-08-01 Nippon Telegr & Teleph Corp <Ntt> Formation of high melting point metal film
JP2659394B2 (en) * 1988-05-09 1997-09-30 三井東圧化学株式会社 Semiconductor thin film manufacturing method
KR960000190B1 (en) * 1992-11-09 1996-01-03 엘지전자주식회사 Semiconductor manufacturing method and apparatus thereof
JPH10308393A (en) * 1997-05-02 1998-11-17 Tokyo Electron Ltd Manufacture and manufacturing device of semiconductor device
JP3813740B2 (en) * 1997-07-11 2006-08-23 Tdk株式会社 Substrates for electronic devices
JP2000160337A (en) * 1998-11-30 2000-06-13 Hitachi Ltd Magnetron sputtering device
JP2000273629A (en) * 1999-03-18 2000-10-03 Ulvac Japan Ltd Formation of low resistance metallic thin film
GB2349392B (en) * 1999-04-20 2003-10-22 Trikon Holdings Ltd A method of depositing a layer
US6349454B1 (en) * 1999-07-29 2002-02-26 Agere Systems Guardian Corp. Method of making thin film resonator apparatus
JP4021601B2 (en) * 1999-10-29 2007-12-12 株式会社東芝 Sputtering apparatus and film forming method
GB2377228C (en) * 2000-07-27 2010-01-08 Trikon Holdings Ltd Magnetron sputtering
JP4016583B2 (en) * 2000-08-31 2007-12-05 株式会社村田製作所 Piezoelectric thin film resonator, filter and electronic device
US6377137B1 (en) * 2000-09-11 2002-04-23 Agilent Technologies, Inc. Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness
JP2002374145A (en) * 2001-06-15 2002-12-26 Ube Electronics Ltd Piezoelectric thin-film resonator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
EP0963040A2 (en) * 1998-06-02 1999-12-08 Hewlett-Packard Company Acoustic resonator and method for making the same
EP1054460A2 (en) * 1999-05-20 2000-11-22 TDK Corporation Thin film piezoelectric device for acoustic resonators
US20020006733A1 (en) * 2000-04-27 2002-01-17 Tdk Corporation Multilayer thin film and its fabrication process as well as electron device
GB2391408A (en) * 2002-07-30 2004-02-04 Agilent Technologies Inc FBAR thin-film resonator with protective layer
US20040021400A1 (en) * 2002-07-30 2004-02-05 Bradley Paul D. Resonator with seed layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEE S-H ET AL: "Influence of electrodes and Bragg reflector on the quality of thin film bulk acoustic wave resonators", 2002 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND PDA EXHIBITION, NEW ORLEANS, USA, 29 May 2002 (2002-05-29) - 31 May 2002 (2002-05-31), pages 45 - 49, XP010618917, ISBN: 0-7803-7082-1 *
YOSHINO Y ET AL: "Effect of buffer electrodes in crystallization of zinc oxide thin film for thin film bulk acoustic wave resonator", MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES II. SYMPOSIUM, BOSTON, USA, 29 November 1999 (1999-11-29) - 1 December 1999 (1999-12-01), Mat. Res. Soc. Symp. Proc., vol. 605, 2000, pages 267 - 272, XP009030776, ISBN: 1-55899-513-7 *

Also Published As

Publication number Publication date
JP2010161781A (en) 2010-07-22
JP5116945B2 (en) 2013-01-09
JP2005536098A (en) 2005-11-24
GB0501682D0 (en) 2005-03-02
GB2406582A (en) 2005-04-06
AU2003252992A1 (en) 2004-02-25
DE10393038B4 (en) 2013-11-07
JP5074540B2 (en) 2012-11-14
WO2004015862A2 (en) 2004-02-19
DE10393038T5 (en) 2005-07-28

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