JP5072633B2 - 電気絶縁材料の表面上の半導体層の厚さを減少しかつ均一化する方法 - Google Patents
電気絶縁材料の表面上の半導体層の厚さを減少しかつ均一化する方法 Download PDFInfo
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- JP5072633B2 JP5072633B2 JP2008027990A JP2008027990A JP5072633B2 JP 5072633 B2 JP5072633 B2 JP 5072633B2 JP 2008027990 A JP2008027990 A JP 2008027990A JP 2008027990 A JP2008027990 A JP 2008027990A JP 5072633 B2 JP5072633 B2 JP 5072633B2
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000000034 method Methods 0.000 title claims description 50
- 239000012777 electrically insulating material Substances 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 105
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 67
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 55
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 32
- 239000002346 layers by function Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 18
- 230000003628 erosive effect Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical group S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 8
- 150000004673 fluoride salts Chemical class 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 65
- 235000012431 wafers Nutrition 0.000 description 61
- 239000000243 solution Substances 0.000 description 43
- 229910017855 NH 4 F Inorganic materials 0.000 description 19
- 230000008859 change Effects 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000002800 charge carrier Substances 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000013590 bulk material Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000035484 reaction time Effects 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 fluoride ions Chemical class 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Description
図1:フッ化水素酸(フッ化水素、HF、水溶液の形)との接触の際のp型ドープされたシリコン中のバンド変化。
Claims (5)
- 電気絶縁性材料の表面上に存在するシリコンからなる半導体層の厚さを減少しかつ均一化する方法において、半導体層の表面をフッ化水素及びフッ化物塩を含有するエッチャントの作用にさらし、そのpH値を前記半導体層の所望の最終厚さの関数として調節して、前記半導体層の表面の単位時間当たりのエッチャントによる材料浸食を半導体層の厚さの減少と共に低下させ、かつ前記材料浸食は所望の最終厚さに達した場合に1秒当たり前記の厚さの0〜10%だけとなるようにし、その際、前記方法を光の作用なしで又は外部電圧の印加なしで実施する、半導体層の厚さを減少しかつ均一化する方法。
- フッ化物塩はフッ化アンモニウムである、請求項1に記載の方法。
- 半導体層はp型ドープされたシリコンからなる、請求項1または2に記載の方法。
- 半導体層はSOIウェハの機能層である、請求項1から3までのいずれか1項記載の方法。
- 半導体層の表面でのエッチャントによる時間当たりの材料浸食は、所望の最終厚さが達成される際に、1秒あたり0〜1nmである、請求項1から4までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007006151A DE102007006151B4 (de) | 2007-02-07 | 2007-02-07 | Verfahren zur Verringerung und Homogenisierung der Dicke einer Halbleiterschicht, die sich auf der Oberfläche eines elektrisch isolierenden Materials befindet |
DE102007006151.1 | 2007-02-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008193100A JP2008193100A (ja) | 2008-08-21 |
JP5072633B2 true JP5072633B2 (ja) | 2012-11-14 |
Family
ID=39156375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008027990A Active JP5072633B2 (ja) | 2007-02-07 | 2008-02-07 | 電気絶縁材料の表面上の半導体層の厚さを減少しかつ均一化する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7988876B2 (ja) |
EP (1) | EP1956643B1 (ja) |
JP (1) | JP5072633B2 (ja) |
KR (1) | KR100922834B1 (ja) |
CN (1) | CN101241856B (ja) |
DE (1) | DE102007006151B4 (ja) |
SG (1) | SG144858A1 (ja) |
TW (1) | TWI415184B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2991099B1 (fr) * | 2012-05-25 | 2014-05-23 | Soitec Silicon On Insulator | Procede de traitement d'une structure semi-conducteur sur isolant en vue d'uniformiser l'epaisseur de la couche semi-conductrice |
JP7039706B2 (ja) * | 2018-07-20 | 2022-03-22 | 富士フイルム株式会社 | 処理液および処理方法 |
US11869774B2 (en) * | 2020-09-25 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for improving etching rate of wet etching |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5277835A (en) | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
DE69029228T2 (de) * | 1989-06-26 | 1997-06-12 | Hashimoto Chemical Ind Co | Oberflächenbehandlungsmittel für Präzisionsoberflächenbehandlung |
JPH0834198B2 (ja) | 1990-11-28 | 1996-03-29 | 信越半導体株式会社 | Soi基板における単結晶薄膜層の膜厚制御方法 |
JPH0817166B2 (ja) | 1991-04-27 | 1996-02-21 | 信越半導体株式会社 | 超薄膜soi基板の製造方法及び製造装置 |
JP3119384B2 (ja) | 1992-01-31 | 2000-12-18 | キヤノン株式会社 | 半導体基板及びその作製方法 |
DE69333619T2 (de) * | 1992-01-30 | 2005-09-29 | Canon K.K. | Herstellungsverfahren für Halbleitersubstrate |
JP3250673B2 (ja) * | 1992-01-31 | 2002-01-28 | キヤノン株式会社 | 半導体素子基体とその作製方法 |
JP2663923B2 (ja) | 1995-06-15 | 1997-10-15 | 日本電気株式会社 | Soi基板の製造方法 |
US5756403A (en) * | 1995-12-29 | 1998-05-26 | Philips Electronics North America | Method of preferentially etching a semiconductor substrate with respect to epitaxial layers |
US6391793B2 (en) * | 1999-08-30 | 2002-05-21 | Micron Technology, Inc. | Compositions for etching silicon with high selectivity to oxides and methods of using same |
JP2004128079A (ja) | 2002-09-30 | 2004-04-22 | Speedfam Co Ltd | Soiウェハーのための多段局所ドライエッチング方法 |
JP4509488B2 (ja) | 2003-04-02 | 2010-07-21 | 株式会社Sumco | 貼り合わせ基板の製造方法 |
US7256104B2 (en) * | 2003-05-21 | 2007-08-14 | Canon Kabushiki Kaisha | Substrate manufacturing method and substrate processing apparatus |
US7115207B2 (en) * | 2003-07-01 | 2006-10-03 | International Businss Machines Corporation | Moly mask construction and process |
DE10344351A1 (de) * | 2003-09-24 | 2005-05-19 | Infineon Technologies Ag | Verfahren zum anisotropen Ätzen von Silizium |
JP2005228965A (ja) | 2004-02-13 | 2005-08-25 | Elpida Memory Inc | 半導体装置の製造方法およびその製造装置 |
JP2005347587A (ja) * | 2004-06-04 | 2005-12-15 | Sony Corp | ドライエッチング後の洗浄液組成物および半導体装置の製造方法 |
DE102004054566B4 (de) | 2004-11-11 | 2008-04-30 | Siltronic Ag | Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit |
JP4693642B2 (ja) * | 2006-01-30 | 2011-06-01 | 株式会社東芝 | 半導体装置の製造方法および洗浄装置 |
-
2007
- 2007-02-07 DE DE102007006151A patent/DE102007006151B4/de not_active Withdrawn - After Issue
- 2007-12-12 EP EP07024113.8A patent/EP1956643B1/de active Active
- 2007-12-28 CN CN2007103059488A patent/CN101241856B/zh active Active
-
2008
- 2008-01-07 KR KR1020080001673A patent/KR100922834B1/ko active IP Right Grant
- 2008-01-22 SG SG200800583-7A patent/SG144858A1/en unknown
- 2008-01-31 US US12/023,223 patent/US7988876B2/en active Active
- 2008-02-05 TW TW097104535A patent/TWI415184B/zh active
- 2008-02-07 JP JP2008027990A patent/JP5072633B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP1956643B1 (de) | 2014-04-09 |
US20080188084A1 (en) | 2008-08-07 |
KR100922834B1 (ko) | 2009-10-20 |
DE102007006151A1 (de) | 2008-08-14 |
US7988876B2 (en) | 2011-08-02 |
CN101241856A (zh) | 2008-08-13 |
TWI415184B (zh) | 2013-11-11 |
JP2008193100A (ja) | 2008-08-21 |
TW200834709A (en) | 2008-08-16 |
DE102007006151B4 (de) | 2008-11-06 |
EP1956643A1 (de) | 2008-08-13 |
CN101241856B (zh) | 2011-08-31 |
SG144858A1 (en) | 2008-08-28 |
KR20080074023A (ko) | 2008-08-12 |
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