JP5060880B2 - 脆性材料基板の分断装置および分断方法 - Google Patents

脆性材料基板の分断装置および分断方法 Download PDF

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Publication number
JP5060880B2
JP5060880B2 JP2007235832A JP2007235832A JP5060880B2 JP 5060880 B2 JP5060880 B2 JP 5060880B2 JP 2007235832 A JP2007235832 A JP 2007235832A JP 2007235832 A JP2007235832 A JP 2007235832A JP 5060880 B2 JP5060880 B2 JP 5060880B2
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Japan
Prior art keywords
laser
substrate
laser spot
spot
optical path
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Expired - Fee Related
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JP2007235832A
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English (en)
Japanese (ja)
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JP2009066613A5 (zh
JP2009066613A (ja
Inventor
則文 在間
山本　　幸司
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Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
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Priority to JP2007235832A priority Critical patent/JP5060880B2/ja
Priority to TW097125515A priority patent/TWI394628B/zh
Priority to KR1020080070920A priority patent/KR101211427B1/ko
Priority to CN2008102151778A priority patent/CN101386467B/zh
Publication of JP2009066613A publication Critical patent/JP2009066613A/ja
Publication of JP2009066613A5 publication Critical patent/JP2009066613A5/ja
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Publication of JP5060880B2 publication Critical patent/JP5060880B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
JP2007235832A 2007-09-11 2007-09-11 脆性材料基板の分断装置および分断方法 Expired - Fee Related JP5060880B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007235832A JP5060880B2 (ja) 2007-09-11 2007-09-11 脆性材料基板の分断装置および分断方法
TW097125515A TWI394628B (zh) 2007-09-11 2008-07-07 The splitting device and segmentation method of brittle material substrate
KR1020080070920A KR101211427B1 (ko) 2007-09-11 2008-07-22 취성재료기판의 절단장치 및 절단방법
CN2008102151778A CN101386467B (zh) 2007-09-11 2008-09-10 脆性材料基板的分割装置和分割方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007235832A JP5060880B2 (ja) 2007-09-11 2007-09-11 脆性材料基板の分断装置および分断方法

Publications (3)

Publication Number Publication Date
JP2009066613A JP2009066613A (ja) 2009-04-02
JP2009066613A5 JP2009066613A5 (zh) 2010-10-14
JP5060880B2 true JP5060880B2 (ja) 2012-10-31

Family

ID=40476174

Family Applications (1)

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JP2007235832A Expired - Fee Related JP5060880B2 (ja) 2007-09-11 2007-09-11 脆性材料基板の分断装置および分断方法

Country Status (4)

Country Link
JP (1) JP5060880B2 (zh)
KR (1) KR101211427B1 (zh)
CN (1) CN101386467B (zh)
TW (1) TWI394628B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478957B2 (ja) * 2009-06-30 2014-04-23 三星ダイヤモンド工業株式会社 脆性材料基板の割断方法
US8932510B2 (en) * 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
KR101097324B1 (ko) 2009-12-29 2011-12-23 삼성모바일디스플레이주식회사 레이저 커팅 방법 및 유기 발광 소자의 제조방법
DE102010028589A1 (de) * 2010-05-05 2011-11-10 Robert Bosch Gmbh Verfahren zur Herstellung eines keramischen Sensorelements
WO2012132024A1 (ja) * 2011-03-29 2012-10-04 Ｊｆｅスチール株式会社 レーザ溶接方法
KR101250223B1 (ko) * 2011-04-28 2013-04-09 주식회사 엠엠테크 레이저 절단장치용 절단 헤드
KR101250225B1 (ko) * 2011-05-03 2013-04-09 주식회사 엠엠테크 레이저 절단장치 및 절단방법
JP2014195040A (ja) * 2013-02-27 2014-10-09 Mitsuboshi Diamond Industrial Co Ltd Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置
JP6233407B2 (ja) * 2013-03-26 2017-11-22 旭硝子株式会社 ガラス板の加工方法、およびガラス板の加工装置
CN103386549B (zh) * 2013-04-09 2016-04-13 杨波 一种激光模切机的排烟气管结构
CN103203554A (zh) * 2013-04-09 2013-07-17 杨波 一种激光模切机
DE102015104802A1 (de) * 2015-03-27 2016-09-29 Schott Ag Verfahren zum Trennen von Glas mittels eines Lasers, sowie verfahrensgemäß hergestelltes Glaserzeugnis
WO2017204055A1 (ja) * 2016-05-25 2017-11-30 三星ダイヤモンド工業株式会社 脆性基板の分断方法
CN106077970B (zh) * 2016-06-30 2018-04-20 维沃移动通信有限公司 一种电阻陶瓷基板的加工方法
JP6775822B2 (ja) * 2016-09-28 2020-10-28 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置
CN107199410B (zh) * 2017-07-25 2019-04-02 东莞市盛雄激光设备有限公司 一种激光切割设备及其切割方法
JP6997566B2 (ja) * 2017-09-14 2022-01-17 株式会社ディスコ レーザー加工装置
CN108393596B (zh) * 2018-05-07 2024-03-01 王立国 一种双工位多功能激光裁切机
WO2020130165A1 (ko) * 2018-12-18 2020-06-25 이석준 취성재료의 레이저 절단 가공방법
JP7323792B2 (ja) * 2019-08-13 2023-08-09 日本製鉄株式会社 レーザー照射装置及び鋼板の加工システム
CN112828474B (zh) * 2020-12-31 2022-07-05 武汉华工激光工程有限责任公司 用于透明脆性材料的斜向切割补偿方法及系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03285786A (ja) * 1990-03-30 1991-12-16 Toshiba Corp レーザ加工装置
KR100673073B1 (ko) * 2000-10-21 2007-01-22 삼성전자주식회사 레이저 빔을 이용한 비금속 기판의 절단 방법 및 장치
WO2003008168A1 (fr) * 2001-07-16 2003-01-30 Mitsuboshi Diamond Industrial Co., Ltd. Dispositif de rainurage pour substrat constitue de matiere fragile
TW583046B (en) * 2001-08-10 2004-04-11 Mitsuboshi Diamond Ind Co Ltd Method and device for scribing brittle material substrate
KR100794284B1 (ko) * 2001-09-29 2008-01-11 삼성전자주식회사 비금속 기판 절단 방법
JP3887394B2 (ja) * 2004-10-08 2007-02-28 芝浦メカトロニクス株式会社 脆性材料の割断加工システム及びその方法
JP2007099587A (ja) * 2005-10-07 2007-04-19 Kyoto Seisakusho Co Ltd 脆性材料の割断加工方法

Also Published As

Publication number Publication date
CN101386467B (zh) 2012-10-10
TW200911435A (en) 2009-03-16
CN101386467A (zh) 2009-03-18
TWI394628B (zh) 2013-05-01
KR20090027139A (ko) 2009-03-16
JP2009066613A (ja) 2009-04-02
KR101211427B1 (ko) 2012-12-12

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