JP5060823B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP5060823B2 JP5060823B2 JP2007114622A JP2007114622A JP5060823B2 JP 5060823 B2 JP5060823 B2 JP 5060823B2 JP 2007114622 A JP2007114622 A JP 2007114622A JP 2007114622 A JP2007114622 A JP 2007114622A JP 5060823 B2 JP5060823 B2 JP 5060823B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type semiconductor
- semiconductor layer
- light
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 81
- 239000000758 substrate Substances 0.000 claims description 70
- 239000012535 impurity Substances 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 218
- 239000000370 acceptor Substances 0.000 description 35
- 229910052594 sapphire Inorganic materials 0.000 description 16
- 239000010980 sapphire Substances 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 238000000295 emission spectrum Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000009877 rendering Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000001443 photoexcitation Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007114622A JP5060823B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007114622A JP5060823B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008270669A JP2008270669A (ja) | 2008-11-06 |
| JP2008270669A5 JP2008270669A5 (enExample) | 2010-06-17 |
| JP5060823B2 true JP5060823B2 (ja) | 2012-10-31 |
Family
ID=40049750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007114622A Expired - Fee Related JP5060823B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5060823B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5330880B2 (ja) * | 2009-03-27 | 2013-10-30 | 学校法人 名城大学 | 発光ダイオード素子及びその製造方法 |
| JP5642623B2 (ja) * | 2011-05-17 | 2014-12-17 | 株式会社東芝 | 半導体発光装置 |
| FR3003402B1 (fr) * | 2013-03-14 | 2016-11-04 | Centre Nat Rech Scient | Dispositif monolithique emetteur de lumiere. |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133464A (ja) * | 1998-10-27 | 2000-05-12 | Toyota Central Res & Dev Lab Inc | 有機電界発光素子 |
| KR100683364B1 (ko) * | 1999-09-27 | 2007-02-15 | 필립스 루미리즈 라이팅 캄파니 엘엘씨 | 완전한 형광 물질 변환에 의해 백색광을 생성하는 발광다이오드 소자 |
| JP2001352098A (ja) * | 2000-06-07 | 2001-12-21 | Sanyo Electric Co Ltd | 半導体発光素子およびその製造方法 |
| JP4153455B2 (ja) * | 2003-11-28 | 2008-09-24 | 学校法人 名城大学 | 蛍光体および発光ダイオード |
| JP4613078B2 (ja) * | 2005-03-01 | 2011-01-12 | 学校法人 名城大学 | 半導体基板の製造方法 |
| DE112007001235B4 (de) * | 2006-05-23 | 2018-05-09 | Meijo University | Licht emittierende Halbleitervorrichtung |
-
2007
- 2007-04-24 JP JP2007114622A patent/JP5060823B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008270669A (ja) | 2008-11-06 |
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