JP2008270669A5 - - Google Patents

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Publication number
JP2008270669A5
JP2008270669A5 JP2007114622A JP2007114622A JP2008270669A5 JP 2008270669 A5 JP2008270669 A5 JP 2008270669A5 JP 2007114622 A JP2007114622 A JP 2007114622A JP 2007114622 A JP2007114622 A JP 2007114622A JP 2008270669 A5 JP2008270669 A5 JP 2008270669A5
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JP
Japan
Prior art keywords
type semiconductor
semiconductor layer
impurities
peak wavelength
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007114622A
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English (en)
Japanese (ja)
Other versions
JP2008270669A (ja
JP5060823B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007114622A priority Critical patent/JP5060823B2/ja
Priority claimed from JP2007114622A external-priority patent/JP5060823B2/ja
Publication of JP2008270669A publication Critical patent/JP2008270669A/ja
Publication of JP2008270669A5 publication Critical patent/JP2008270669A5/ja
Application granted granted Critical
Publication of JP5060823B2 publication Critical patent/JP5060823B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007114622A 2007-04-24 2007-04-24 半導体発光素子 Expired - Fee Related JP5060823B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007114622A JP5060823B2 (ja) 2007-04-24 2007-04-24 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007114622A JP5060823B2 (ja) 2007-04-24 2007-04-24 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2008270669A JP2008270669A (ja) 2008-11-06
JP2008270669A5 true JP2008270669A5 (enExample) 2010-06-17
JP5060823B2 JP5060823B2 (ja) 2012-10-31

Family

ID=40049750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007114622A Expired - Fee Related JP5060823B2 (ja) 2007-04-24 2007-04-24 半導体発光素子

Country Status (1)

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JP (1) JP5060823B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5330880B2 (ja) * 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
JP5642623B2 (ja) * 2011-05-17 2014-12-17 株式会社東芝 半導体発光装置
FR3003402B1 (fr) * 2013-03-14 2016-11-04 Centre Nat Rech Scient Dispositif monolithique emetteur de lumiere.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133464A (ja) * 1998-10-27 2000-05-12 Toyota Central Res & Dev Lab Inc 有機電界発光素子
KR100683364B1 (ko) * 1999-09-27 2007-02-15 필립스 루미리즈 라이팅 캄파니 엘엘씨 완전한 형광 물질 변환에 의해 백색광을 생성하는 발광다이오드 소자
JP2001352098A (ja) * 2000-06-07 2001-12-21 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
JP4153455B2 (ja) * 2003-11-28 2008-09-24 学校法人 名城大学 蛍光体および発光ダイオード
JP4613078B2 (ja) * 2005-03-01 2011-01-12 学校法人 名城大学 半導体基板の製造方法
DE112007001235B4 (de) * 2006-05-23 2018-05-09 Meijo University Licht emittierende Halbleitervorrichtung

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