JP5059471B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP5059471B2
JP5059471B2 JP2007102736A JP2007102736A JP5059471B2 JP 5059471 B2 JP5059471 B2 JP 5059471B2 JP 2007102736 A JP2007102736 A JP 2007102736A JP 2007102736 A JP2007102736 A JP 2007102736A JP 5059471 B2 JP5059471 B2 JP 5059471B2
Authority
JP
Japan
Prior art keywords
pull
signal
gate electrode
voltage
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007102736A
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English (en)
Japanese (ja)
Other versions
JP2007279748A5 (enExample
JP2007279748A (ja
Inventor
▲キョン▼ 周 申
鍾 哲 蔡
珠 愛 尹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007279748A publication Critical patent/JP2007279748A/ja
Publication of JP2007279748A5 publication Critical patent/JP2007279748A5/ja
Application granted granted Critical
Publication of JP5059471B2 publication Critical patent/JP5059471B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0833—Several active elements per pixel in active matrix panels forming a linear amplifier or follower
    • G09G2300/0838—Several active elements per pixel in active matrix panels forming a linear amplifier or follower with level shifting
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0871—Several active elements per pixel in active matrix panels with level shifting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
  • Liquid Crystal Display Device Control (AREA)
JP2007102736A 2006-04-10 2007-04-10 表示装置 Expired - Fee Related JP5059471B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060032296A KR20070101033A (ko) 2006-04-10 2006-04-10 신호 구동 소자 및 이를 포함하는 표시 장치
KR10-2006-0032296 2006-04-10

Publications (3)

Publication Number Publication Date
JP2007279748A JP2007279748A (ja) 2007-10-25
JP2007279748A5 JP2007279748A5 (enExample) 2010-05-27
JP5059471B2 true JP5059471B2 (ja) 2012-10-24

Family

ID=38574306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007102736A Expired - Fee Related JP5059471B2 (ja) 2006-04-10 2007-04-10 表示装置

Country Status (4)

Country Link
US (1) US8089445B2 (enExample)
JP (1) JP5059471B2 (enExample)
KR (1) KR20070101033A (enExample)
CN (1) CN101055706A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101450900B1 (ko) * 2008-04-11 2014-10-14 엘지디스플레이 주식회사 표시장치
KR101259727B1 (ko) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI617029B (zh) * 2009-03-27 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置
KR101907366B1 (ko) 2009-07-18 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR101746198B1 (ko) * 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
CN102834921B (zh) * 2010-03-26 2016-04-27 株式会社半导体能源研究所 半导体装置的制造方法
TWI621243B (zh) * 2011-08-29 2018-04-11 半導體能源研究所股份有限公司 半導體裝置
CN102969311B (zh) * 2012-11-27 2015-02-11 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
TWI622053B (zh) 2013-07-10 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
KR102478470B1 (ko) 2015-06-25 2022-12-19 삼성디스플레이 주식회사 박막 트랜지스터 기판, 및 유기 발광 표시 장치
KR102481068B1 (ko) 2016-01-04 2022-12-27 삼성디스플레이 주식회사 표시장치
KR102465003B1 (ko) 2016-01-04 2022-11-10 삼성디스플레이 주식회사 표시장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970009143A (ko) 1995-07-29 1997-02-24 배순훈 전화원격조정용기기의 다중 접속 장치 및 방법
US5949398A (en) * 1996-04-12 1999-09-07 Thomson Multimedia S.A. Select line driver for a display matrix with toggling backplane
JPH11327490A (ja) * 1998-05-20 1999-11-26 Yunisutec:Kk 表示装置
JP2001051292A (ja) * 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
JP3997636B2 (ja) * 1998-12-16 2007-10-24 カシオ計算機株式会社 表示装置
JP2002033481A (ja) 2000-07-14 2002-01-31 Sony Corp 薄膜半導体装置
US7642573B2 (en) * 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
US20060068532A1 (en) * 2004-09-28 2006-03-30 Sharp Laboratories Of America, Inc. Dual-gate thin-film transistor
US20050248515A1 (en) * 2004-04-28 2005-11-10 Naugler W E Jr Stabilized active matrix emissive display

Also Published As

Publication number Publication date
US8089445B2 (en) 2012-01-03
JP2007279748A (ja) 2007-10-25
CN101055706A (zh) 2007-10-17
KR20070101033A (ko) 2007-10-16
US20070235803A1 (en) 2007-10-11

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