JP5057703B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5057703B2
JP5057703B2 JP2006151079A JP2006151079A JP5057703B2 JP 5057703 B2 JP5057703 B2 JP 5057703B2 JP 2006151079 A JP2006151079 A JP 2006151079A JP 2006151079 A JP2006151079 A JP 2006151079A JP 5057703 B2 JP5057703 B2 JP 5057703B2
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Japan
Prior art keywords
film
metal
layer
insulating film
substrate
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Expired - Fee Related
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JP2006151079A
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English (en)
Japanese (ja)
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JP2007013128A5 (enExample
JP2007013128A (ja
Inventor
友子 田村
香 荻田
浩二 大力
純矢 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006151079A priority Critical patent/JP5057703B2/ja
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Publication of JP2007013128A5 publication Critical patent/JP2007013128A5/ja
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Publication of JP5057703B2 publication Critical patent/JP5057703B2/ja
Expired - Fee Related legal-status Critical Current
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2006151079A 2005-05-31 2006-05-31 半導体装置の作製方法 Expired - Fee Related JP5057703B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006151079A JP5057703B2 (ja) 2005-05-31 2006-05-31 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005158761 2005-05-31
JP2005158761 2005-05-31
JP2006151079A JP5057703B2 (ja) 2005-05-31 2006-05-31 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007013128A JP2007013128A (ja) 2007-01-18
JP2007013128A5 JP2007013128A5 (enExample) 2009-06-25
JP5057703B2 true JP5057703B2 (ja) 2012-10-24

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ID=37751156

Family Applications (1)

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JP2006151079A Expired - Fee Related JP5057703B2 (ja) 2005-05-31 2006-05-31 半導体装置の作製方法

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JP (1) JP5057703B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2372756A1 (en) 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
CN101803008B (zh) 2007-09-07 2012-11-28 株式会社半导体能源研究所 半导体装置及其制造方法
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
KR101747158B1 (ko) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR102317763B1 (ko) * 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102254815A (zh) * 2011-07-05 2011-11-23 上海宏力半导体制造有限公司 半导体器件制备过程中导电层的刻蚀方法
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2015029286A1 (ja) * 2013-08-27 2015-03-05 パナソニック株式会社 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板
TWI695525B (zh) 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP4748943B2 (ja) * 2003-02-28 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI221010B (en) * 2003-08-07 2004-09-11 Ind Tech Res Inst A method for transferably pasting an element
JP5089037B2 (ja) * 2004-12-03 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JP2007013128A (ja) 2007-01-18

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