JP5057696B2 - 半導体回路及び表示装置 - Google Patents

半導体回路及び表示装置 Download PDF

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Publication number
JP5057696B2
JP5057696B2 JP2006131797A JP2006131797A JP5057696B2 JP 5057696 B2 JP5057696 B2 JP 5057696B2 JP 2006131797 A JP2006131797 A JP 2006131797A JP 2006131797 A JP2006131797 A JP 2006131797A JP 5057696 B2 JP5057696 B2 JP 5057696B2
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Prior art keywords
channel transistor
circuit
terminal
gate
shift register
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JP2006131797A
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Japanese (ja)
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JP2006352090A (ja
JP2006352090A5 (enExample
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光明 納
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006131797A priority Critical patent/JP5057696B2/ja
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Publication of JP2006352090A5 publication Critical patent/JP2006352090A5/ja
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  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)
  • Control Of El Displays (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal Display Device Control (AREA)
JP2006131797A 2005-05-20 2006-05-10 半導体回路及び表示装置 Active JP5057696B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006131797A JP5057696B2 (ja) 2005-05-20 2006-05-10 半導体回路及び表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005148814 2005-05-20
JP2005148814 2005-05-20
JP2006131797A JP5057696B2 (ja) 2005-05-20 2006-05-10 半導体回路及び表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012152097A Division JP2012256056A (ja) 2005-05-20 2012-07-06 表示装置、表示モジュール及び電子機器

Publications (3)

Publication Number Publication Date
JP2006352090A JP2006352090A (ja) 2006-12-28
JP2006352090A5 JP2006352090A5 (enExample) 2009-06-18
JP5057696B2 true JP5057696B2 (ja) 2012-10-24

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JP2006131797A Active JP5057696B2 (ja) 2005-05-20 2006-05-10 半導体回路及び表示装置

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JP (1) JP5057696B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052351A1 (en) 2009-10-29 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220153647A (ko) 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101669476B1 (ko) * 2009-10-30 2016-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
WO2011077946A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001143491A (ja) * 1999-08-31 2001-05-25 Semiconductor Energy Lab Co Ltd シフトレジスタ回路、表示装置の駆動回路および該駆動回路を用いた表示装置
JP2003101394A (ja) * 2001-05-29 2003-04-04 Semiconductor Energy Lab Co Ltd パルス出力回路、シフトレジスタ、および表示装置

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Publication number Publication date
JP2006352090A (ja) 2006-12-28

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