JP5057668B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5057668B2
JP5057668B2 JP2005333092A JP2005333092A JP5057668B2 JP 5057668 B2 JP5057668 B2 JP 5057668B2 JP 2005333092 A JP2005333092 A JP 2005333092A JP 2005333092 A JP2005333092 A JP 2005333092A JP 5057668 B2 JP5057668 B2 JP 5057668B2
Authority
JP
Japan
Prior art keywords
laser beam
impurity
laser
region
impurity region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005333092A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006173587A5 (enExample
JP2006173587A (ja
Inventor
幸一郎 田中
良明 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005333092A priority Critical patent/JP5057668B2/ja
Publication of JP2006173587A publication Critical patent/JP2006173587A/ja
Publication of JP2006173587A5 publication Critical patent/JP2006173587A5/ja
Application granted granted Critical
Publication of JP5057668B2 publication Critical patent/JP5057668B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005333092A 2004-11-18 2005-11-17 半導体装置の作製方法 Expired - Fee Related JP5057668B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005333092A JP5057668B2 (ja) 2004-11-18 2005-11-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004334190 2004-11-18
JP2004334190 2004-11-18
JP2005333092A JP5057668B2 (ja) 2004-11-18 2005-11-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006173587A JP2006173587A (ja) 2006-06-29
JP2006173587A5 JP2006173587A5 (enExample) 2009-01-08
JP5057668B2 true JP5057668B2 (ja) 2012-10-24

Family

ID=36673946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005333092A Expired - Fee Related JP5057668B2 (ja) 2004-11-18 2005-11-17 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5057668B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5117076B2 (ja) * 2007-03-05 2013-01-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100878159B1 (ko) 2007-04-19 2009-01-13 주식회사 코윈디에스티 레이저 가공장치
WO2011102233A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5865303B2 (ja) 2013-07-12 2016-02-17 アイシン精機株式会社 レーザ処理装置、およびレーザ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3277533B2 (ja) * 1992-01-08 2002-04-22 ソニー株式会社 半導体装置の製造方法
JP2002299629A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ポリシリコン薄膜半導体およびポリシリコン薄膜半導体の製造方法
JP3904936B2 (ja) * 2001-03-02 2007-04-11 富士通株式会社 半導体装置の製造方法
JP4073672B2 (ja) * 2002-01-21 2008-04-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2004064064A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
JP5095073B2 (ja) * 2004-04-28 2012-12-12 株式会社イー・エム・ディー 半導体物質の表面改質方法、半導体装置の製造方法

Also Published As

Publication number Publication date
JP2006173587A (ja) 2006-06-29

Similar Documents

Publication Publication Date Title
KR101217108B1 (ko) 반도체장치의 제조 방법
US7842583B2 (en) Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
US7521326B2 (en) Semiconductor device and manufacturing method thereof
US8772128B2 (en) Method for manufacturing semiconductor device
CN101044597B (zh) 激光照射方法、激光照射装置和制造半导体器件的方法
US8324086B2 (en) Method for manufacturing a semiconductor substrate by laser irradiation
TW558861B (en) Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
US20060205129A1 (en) Method for manufacturing semiconductor device
US7563661B2 (en) Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
CN101097963B (zh) 半导体装置及其制造方法
TW200840028A (en) Semiconductor device and manufacturing method thereof
JP5526208B2 (ja) 半導体装置および半導体装置の作製方法
KR20080086846A (ko) 결정성 반도체막의 제조방법 및 박막트랜지스터의 제조방법
JP5411456B2 (ja) 半導体装置
JP2006310445A (ja) 半導体装置の作製方法
US8835800B2 (en) Laser irradiation apparatus and method for manufacturing semiconductor device
JP2006173587A (ja) 半導体装置およびその作製方法
JP5352040B2 (ja) 半導体装置の作製方法
JP4999323B2 (ja) 半導体装置の作製方法
JP2006148086A (ja) レーザ照射方法、レーザ照射装置、および半導体装置の作製方法
JP5121207B2 (ja) 半導体装置及びその作製方法
JP5576617B2 (ja) 単結晶半導体層の結晶性評価方法
JP2008141046A (ja) 半導体膜の結晶化方法、および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081113

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081113

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110901

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120413

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120515

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120703

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120724

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120731

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150810

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150810

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees