JP2006173587A5 - - Google Patents

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Publication number
JP2006173587A5
JP2006173587A5 JP2005333092A JP2005333092A JP2006173587A5 JP 2006173587 A5 JP2006173587 A5 JP 2006173587A5 JP 2005333092 A JP2005333092 A JP 2005333092A JP 2005333092 A JP2005333092 A JP 2005333092A JP 2006173587 A5 JP2006173587 A5 JP 2006173587A5
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JP
Japan
Prior art keywords
laser beam
impurity
region
impurity region
manufacturing
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Application number
JP2005333092A
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English (en)
Japanese (ja)
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JP5057668B2 (ja
JP2006173587A (ja
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Priority to JP2005333092A priority Critical patent/JP5057668B2/ja
Priority claimed from JP2005333092A external-priority patent/JP5057668B2/ja
Publication of JP2006173587A publication Critical patent/JP2006173587A/ja
Publication of JP2006173587A5 publication Critical patent/JP2006173587A5/ja
Application granted granted Critical
Publication of JP5057668B2 publication Critical patent/JP5057668B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005333092A 2004-11-18 2005-11-17 半導体装置の作製方法 Expired - Fee Related JP5057668B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005333092A JP5057668B2 (ja) 2004-11-18 2005-11-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004334190 2004-11-18
JP2004334190 2004-11-18
JP2005333092A JP5057668B2 (ja) 2004-11-18 2005-11-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006173587A JP2006173587A (ja) 2006-06-29
JP2006173587A5 true JP2006173587A5 (enExample) 2009-01-08
JP5057668B2 JP5057668B2 (ja) 2012-10-24

Family

ID=36673946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005333092A Expired - Fee Related JP5057668B2 (ja) 2004-11-18 2005-11-17 半導体装置の作製方法

Country Status (1)

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JP (1) JP5057668B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5117076B2 (ja) * 2007-03-05 2013-01-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100878159B1 (ko) 2007-04-19 2009-01-13 주식회사 코윈디에스티 레이저 가공장치
CN102754163B (zh) 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
JP5865303B2 (ja) 2013-07-12 2016-02-17 アイシン精機株式会社 レーザ処理装置、およびレーザ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3277533B2 (ja) * 1992-01-08 2002-04-22 ソニー株式会社 半導体装置の製造方法
JP2002299629A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd ポリシリコン薄膜半導体およびポリシリコン薄膜半導体の製造方法
JP3904936B2 (ja) * 2001-03-02 2007-04-11 富士通株式会社 半導体装置の製造方法
JP4073672B2 (ja) * 2002-01-21 2008-04-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2004064064A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
JP5095073B2 (ja) * 2004-04-28 2012-12-12 株式会社イー・エム・ディー 半導体物質の表面改質方法、半導体装置の製造方法

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