JP5053929B2 - Division exposure method and division exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To allow contact and separation with and from a photomask and substrate to be completed at one time when carrying out split exposure of a pattern drawn in the photomask. <P>SOLUTION: An entire region of a photmask 4 and that of a substrate 1 are in uniform contact with each other after carrying out relative displacement of both regions in the XY&theta; directions so as to be aligned. The photomask 4 and substrate 1 are aligned with respect to one split region by curving the photomask 4 and substrate 1. A portion other than the aligned split region is covered using X shutters 34a, 34b, 34f and Y shutter 36, so that only the aligned split region is exposed. With respect to the entire split region, the alignment and exposure for curving the photomask 4 and substrate 1 are repeated allowing the photomask 4 and substrate 1 to be in contact with each other. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  In the present invention, an exposure surface of a substrate on which a photosensitive layer is formed is divided into a plurality of substrate divided regions, and a photomask pattern surface on which a pattern is drawn corresponds to each of the substrate divided regions. A divided exposure method for transferring a pattern drawn in the photomask divided area for each of the substrate divided areas by dividing the mask into divided areas and irradiating light through the photomask divided areas, and the divided exposure method is performed. The present invention relates to a divided exposure apparatus.

  Conventionally, in order to form a conductive pattern or the like on the surface of a printed circuit board or the like, a substrate having a photosensitive layer formed on the surface and a photomask on which the pattern is drawn are arranged so as to irradiate the substrate with light through the photomask. Therefore, an exposure method for transferring a pattern to a photosensitive layer on a substrate surface has been widely performed.

  In this exposure method, in order to transfer the pattern drawn on the photomask to the substrate, it is necessary to align a number of conductive holes and the like provided on substantially the entire surface of the substrate with the pattern drawn on the photomask. .

  For this reason, a plurality of alignment marks are attached to the corresponding positions of the photomask and the substrate.

  After aligning the substrate and photomask using these alignment marks, the substrate is irradiated with light through the photomask, and the pattern is transferred to the exposure surface on which the photosensitive layer is formed. Processing is complete.

  However, the dimensions of the photomask and the substrate change due to manufacturing errors, changes in temperature, humidity, and the like.

  Therefore, a difference occurs in the distance between a plurality of alignment marks attached to the photomask and the substrate, that is, the alignment mark pitch, and it is difficult to perfectly align the alignment marks between the photomask and the substrate.

  Therefore, the substrate and the photomask are aligned so as to apportion the deviation amount between a plurality of alignment marks attached to the corresponding positions of the photomask and the substrate so that the dimensional error is distributed to the average. I was going.

  However, the conductive pattern formed on the surface of the printed circuit board is desired to have higher density and higher accuracy year by year. For this purpose, the pitch difference between the alignment marks of the photomask and the substrate should be as small as possible. It has been required to transfer a pattern drawn on a photomask to a substrate with high accuracy.

  As the method, there is a divided exposure method in which the exposure surface of the substrate on which the photosensitive layer is formed is divided into a plurality of divided regions, the exposure region is reduced, and the pattern drawn on the photomask is transferred to the substrate for each divided region. Proposed.

  When the division exposure method is not used, the alignment marks are usually provided at the four corners of the substrate and the photomask. Therefore, the pitch of the alignment marks is substantially equal to the length of one side of the substrate. The alignment and exposure between the substrate and the photomask are performed at once over the entire area of the substrate.

  On the other hand, when the division exposure method is used, for example, if the substrate and the photomask are divided into four divided areas by the vertical center line and the horizontal center line, alignment marks are provided at the four corners of each divided area. It is done. Therefore, the pitch of the alignment marks is equal to approximately half the length of one side of the substrate. Position alignment and exposure between the substrate and the photomask are performed for each divided region. Since the pitch of the alignment marks is halved compared with the case where the method of division exposure is not used, the amount of deviation between the alignment marks at each position can be suppressed within a smaller range. As a result, more accurate transfer can be performed over the entire area of the substrate.

  However, the conventional divided exposure method requires the process of alignment for each divided area, adhesion between the substrate and photomask, exposure, and separation, so the accuracy is better than the exposure method that aligns the entire area at once. However, there is a problem that productivity is remarkably deteriorated, dust is likely to enter the exposed surface to reduce the exposure quality, and the life of the photomask is shortened.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a divided exposure method and a divided exposure apparatus that do not need to repeat the process of closely contacting and separating the substrate and the photomask, and to solve the conventional problems.

In order to solve the above problems, according to the present invention,
The exposure surface of the substrate on which the photosensitive layer is formed is divided into a plurality of substrate division regions, and the pattern surface of the photomask on which the pattern is drawn is divided into a plurality of photomask division regions so as to correspond to each of the substrate division regions. In the divided exposure method of dividing and irradiating light through the photomask divided area to transfer a pattern drawn in the photomask divided area for each substrate divided area,
When the substrate is curved around a first axis extending in the same direction as the first pair of opposite sides of the substrate, the position on the exposure surface is unchanged regardless of the amount of curvature. When the substrate is bent around a second axis extending in the same direction as the second pair of sides facing each other, the position of the substrate is not limited regardless of the amount of the curve. The substrate dividing region is defined by a second line segment on the exposure surface that is invariant,
A position on the first and / or second line segment on the exposure surface and a position on the pattern surface corresponding to the position include a plurality of first substrate alignment marks and A plurality of first photomask alignment marks are provided respectively.
A second substrate alignment mark and a second photomask alignment mark are provided at a plurality of positions in each of the substrate division regions and at a plurality of positions in each of the photomask division regions corresponding to the plurality of positions. And
The exposure method is:
(1) placing the photomask facing the substrate so that the pattern surface of the photomask covers the exposed surface of the substrate;
(2) By using the first substrate alignment mark and the first photomask alignment mark to move the photomask and / or the substrate relative to each other in the XYθ direction, the entire region of the photomask And aligning the entire area of the substrate;
(3) uniformly contacting the photomask and the substrate;
(4) Using the second substrate alignment mark and the second photomask alignment mark while keeping the photomask and the substrate in contact with each other, the photomask and Aligning and exposing the substrate; and
Including
The step of aligning and exposing each of the substrate division regions comprises:
i) curving the substrate and the photomask around the first axis and / or around the second axis to substantially change a pattern dimension drawn on the photomask; Using the substrate alignment mark and the second photomask alignment mark to align one substrate division region and one photomask division region corresponding thereto,
ii) transferring the pattern drawn on the one photomask divided area onto the one substrate divided area by irradiating light onto the one substrate divided area through the one photomask divided area;
iii) performing the step i) and the step ii) for each of the other substrate division regions while keeping the photomask and the substrate in contact with each other;
Including,
A split exposure method is provided.

  Each of the first substrate alignment marks may be constituted by two mark elements arranged so as to sandwich the first line segment or the second line segment.

  In this case, the mark element can also serve as a part of the second substrate alignment mark.

The step of aligning the entire area of the photomask and the entire area of the substrate using the first substrate alignment mark and the first photomask alignment mark is performed by the first substrate alignment. The mark and the first photomask alignment mark are detected by a mark detection means, and a deviation amount between the first substrate alignment mark and the first photomask alignment mark is calculated based on the detected data. In accordance with the calculation result, it can be performed by moving at least one of the substrate and the photomask with respect to the other,
The step of aligning the photomask and the substrate for each of the substrate division regions using the second substrate alignment mark and the second photomask alignment mark,
The mark detection means detects the second substrate alignment mark and the second photomask alignment mark for each substrate division region in a state where the substrate and the photomask are in uniform contact. The amount of deviation between the second substrate alignment mark and the second photomask alignment mark is calculated based on the detected data, and the amount of curvature around the first axis and / or according to the calculation result The amount of bending about the second axis can be determined, and the substrate and the photomask can be bent by the determined amount of bending.

  The mark detection means may be a CCD camera.

According to the invention,
The exposure surface of the substrate on which the photosensitive layer is formed is divided into a plurality of substrate division regions, and the pattern surface of the photomask on which the pattern is drawn is divided into a plurality of photomask division regions so as to correspond to each of the substrate division regions. A division exposure apparatus used in a division exposure method that divides and irradiates light through the photomask division area to transfer a pattern drawn in the photomask division area for each of the substrate division areas,
A substrate support member for fixing and supporting the substrate over the entire surface of the substrate opposite to the exposure surface, and a substrate support member capable of bending the substrate by bending itself;
A photomask support member for supporting the photomask so that the pattern surface faces the exposure surface;
First moving means for moving at least one of the substrate support member and the photomask support member to align the photomask and the substrate;
Second moving means for moving at least one of the substrate support member and the photomask support member to bring the photomask and the substrate into contact with and away from each other;
The first pair of opposing side edges of the substrate support member such that the substrate is curved a desired amount about a first axis extending in the same direction as the first pair of opposing sides of the substrate. A first deformation mechanism for acting on the substrate support member to bend,
A second pair of opposite side edges of the substrate support member such that the substrate is curved a desired amount about a second axis extending in the same direction as the second pair of opposite sides of the substrate. A second deformation mechanism for acting on the substrate support member and bending the substrate support member;
With
The first deformation mechanism bends the substrate support member so as to define a first line segment on the exposure surface whose position is invariant regardless of the amount of curvature of the substrate about the first axis. Is supposed to
The second deformation mechanism bends the substrate support member so as to define a second line segment on the exposure surface whose position is invariant regardless of the amount of bending of the substrate about the second axis. Is supposed to
A plurality of photomask divisions corresponding to the plurality of substrate division regions divided by the first line segment and the second line segment as control means for controlling the operation of the first and second deformation mechanisms. Control means for controlling the curvature of the substrate support member so as to substantially change the pattern to a desired dimension for each region, and thereby controlling the curvature of the substrate;
A light irradiating means for irradiating the exposure surface with light through the photomask divided region for each of the substrate divided regions;
A split exposure apparatus is further provided.

  The light irradiating means may include a light shielding means for shielding a portion other than the substrate division area to be exposed.

  Alternatively, the light irradiation means includes a plurality of semiconductor light emitting elements, and the light irradiation means can selectively emit only the semiconductor light emitting elements corresponding to the substrate division region to be exposed among the plurality of semiconductor light emitting elements. It can also have a function.

  According to the divided exposure method of the present invention, when the entire area of the photomask and the entire area of the substrate are aligned for the first time, both are in a state of being separated from each other. Until the alignment and exposure in the region are all completed, the substrate and the photomask are kept in contact with each other. Therefore, the possibility that dust enters and adheres to the exposure surface is low. Further, since it is not necessary to repeat the process of closely contacting and separating the substrate and the photomask, productivity can be improved and the life of the photomask can be extended.

  FIG. 1 is a plan view of a substrate 1 used in the exposure method of the present invention. The exposure surface 2 of the substrate 1 is divided into four substrate division regions 2a to 2d. The line segments 7a and 7b that define these substrate division regions are determined as follows. That is, when the substrate 1 is curved around the first axis extending in the same direction as the first pair of opposite sides 1a and 1b of the substrate 1, the line segment 7a is independent of the amount of curvature. This is a line segment (first line segment) on the exposure surface 2 whose position is unchanged. Similarly, when the substrate 1 is bent around the second axis extending in the same direction as the second pair of sides 1c and 1d facing each other, the line segment 7b is related to the amount of bending. It is a line segment (second line segment) on the exposure surface 2 whose position remains unchanged.

  The exposure surface 2 may be divided into two substrate division regions only by the line segment 7a or the line segment 7b.

  On the first and second line segments 7a and 7b on the exposure surface 2, four first substrate alignment marks 8a to 8d are provided.

  Each of the substrate division regions 2a to 2d is provided with second substrate alignment marks 3a to 3d at the four corners.

  FIG. 2 is a plan view of a photomask 4 used in the divided exposure method of the present invention. A pattern surface 40 on which a pattern of the photomask 4 is drawn (not shown) is also divided into four photomask divided regions 9 a to 9 d so as to correspond to the substrate divided regions of the substrate 1.

  At the position corresponding to the first substrate alignment marks 8a to 8d on the first and second line segments 7a and 7b of the exposure surface 2 of the pattern surface 40 of the photomask 4, the first photomask alignment is performed. Marks 10a to 10d are provided.

  In addition, second photomask alignment marks 4a to 4d are provided on the pattern surface 40 of the photomask 4 at positions corresponding to the second substrate alignment marks 3a to 3d in the substrate division regions 2a to 2d, respectively. It has been.

  Each of the first substrate alignment marks 8a to 8d on the exposure surface 2 is constituted by two mark elements (not shown) arranged so as to sandwich the first line segment 7a or the second line segment 7b. May be. In this case, these mark elements can also serve as part of the second substrate alignment marks 3a to 3d. When each of the first substrate alignment marks 8a to 8d on the exposure surface 2 is constituted by two mark elements, each of the corresponding first photomask alignment marks 10a to 10d in the photomask 4 is also 2 It can consist of two mark elements. These mark elements can also serve as part of the second photomask alignment marks 4a to 4d.

  The flow of exposing a substrate by the divided exposure method of the present invention will be described with reference to FIGS. First, as shown in FIG. 3, the photomask 4 is arranged so as to face the substrate 1 so that the pattern surface 40 of the photomask 4 on which the pattern and the alignment mark are drawn covers the exposure surface 2 of the substrate 1. To do. The substrate 1 and the photomask 4 are arranged apart from each other. A field of view 5 of a CCD camera (not shown) as mark detection means simultaneously captures the first substrate alignment marks 8a to 8d of the substrate 1 and the first photomask alignment marks 10a to 10d of the photomask 4. . The CCD camera detects the first substrate alignment mark and the first photomask alignment mark. Based on the detected data, the amount of deviation between the first substrate alignment marks 8a to 8d of the substrate 1 and the first photomask alignment marks 10a to 10d of the photomask 4 at the four positions is different. Calculated.

  Next, according to the calculation result, at least one of the substrate 1 and the photomask 4 is moved in the XYθ direction with respect to the other, and as shown in FIG. The amount of deviation between the photomask alignment marks is averaged. Thereby, the alignment of the entire region of the substrate 1 and the entire region of the photomask 4 is completed.

  When the entire alignment is completed, the photomask 4 and the substrate 1 are brought into uniform contact with each other. Subsequent alignment and exposure for each substrate division region are performed while the photomask 4 and the substrate 1 are in contact with each other.

  The alignment starts with exposure between the substrate division region 2a and the photomask division region 9a (FIG. 5). A CCD camera (not shown) as mark detection means has a second field alignment mark 3a in the substrate division region 2a and a second mask in the photomask division region 9a of the photomask 4 corresponding thereto in the field of view 5. The photomask alignment mark 4a is simultaneously captured and detected. Based on the detected data, the shift amount between the second substrate alignment mark 3a and the second photomask alignment mark 4a is calculated at each position. According to the calculation result, it is determined how much the substrate 1 and the photomask 4 should be curved around the first axis and / or around the second axis in order to minimize the deviation amount. It is also possible to provide different amounts of curvature at respective positions along the first axis and / or the second axis.

  It is known that the pattern drawn on the photomask and the pitch between alignment marks are scaled by curving the photomask 4. Since the photomask 4 has a larger thickness than the substrate 1, when it is curved, the pattern drawn on the pattern surface 40 at a distance away from the neutral axis and the pitch between the alignment marks are in the bending direction. And it is enlarged or reduced according to the amount of bending. Since the substrate 1 is relatively thin, the pitch between the alignment marks on the exposure surface 2 hardly changes even if it is curved. Therefore, by curving the overlapping substrate 1 and photomask 4 together, the amount of deviation between the alignment marks on both can be adjusted.

  FIG. 5 shows that the substrate 1 and the photomask 4 are curved by a predetermined amount around the first axis and the second axis, and the second substrate alignment mark 3a in the substrate division region 2a and the first in the photomask division region 9a. This shows a state in which the amount of deviation from the second photomask alignment mark 4a is minimized at each of the four positions. Deviation amounts X1 to X4 and Y1 to Y4 between the final second substrate alignment mark 3a and the second photomask alignment mark 4a obtained by the bending are final positions obtained by movement in the XYθ direction. The amount of deviation between the alignment marks can be made smaller. This is because, as described above, it is possible to give different amounts of bending at respective positions along the first axis and / or the second axis.

  When the substrate division region 2a and the photomask division region 9a are aligned, the second substrate alignment mark and the second substrate alignment region 2b, 2c, 2d and the second photomask division regions 9b, 9c, 9d It is not necessary to consider the amount of deviation between the photomask alignment marks.

  When the alignment between the substrate division region 2a and the photomask division region 9a is completed, only the substrate division region 2a is exposed by the light irradiation means. At this time, a pair of rectangular light-shielding plates 11a and 1b may be used as the light-shielding means 11 that covers an area other than the substrate division area 2a. The light shielding plates 11a and 11b move so as to partially overlap each other, and shield regions other than the selected substrate division region. The light shielding means 11 can also be configured by combining more light shielding plates. Alternatively, the light irradiation means may have a plurality of semiconductor light emitting elements, and among these semiconductor light emitting elements, only the semiconductor light emitting elements corresponding to the substrate division region to be exposed may be selected to emit light. .

  By exposure, only the pattern drawn in the photomask divided area 9a is transferred to the substrate divided area 2a.

  When the exposure of the substrate division region 2a is completed, the process proceeds to the alignment of the substrate division region 2b and the photomask division region 9b (FIG. 6). The substrate 1 and the photomask 4 remain in contact. This time, the first substrate alignment mark 3b in the substrate division region 2b and the second photomask alignment mark 4b in the photomask division region 9b are minimized so that the amount of deviation is minimized at each of the four locations. The amount of curvature of the substrate 1 and the photomask 4 around the second axis and the amount of curvature of the substrate 1 and the photomask 4 around the second axis are determined. When the alignment is completed, the substrate division region 2b is exposed.

  In this way, alignment and exposure (FIG. 7) of the substrate division region 2c and alignment and exposure (FIG. 8) of the substrate division region 2d are sequentially performed. When the exposure of the substrate division region 2d is completed, the entire pattern drawn on the pattern surface 40 of the photomask 4 is transferred to the substrate 1. An appropriately scaled pattern is transferred to each substrate division region.

  On the other hand, since the positions of the line segments 7a and 7b that define each substrate division region are unchanged regardless of the amount of curvature, the continuity of the pattern transferred to each substrate division region is maintained.

  Next, a divided exposure apparatus for carrying out the divided exposure method according to the present invention will be described.

  FIG. 9 is a schematic sectional side view of one embodiment of the divided exposure apparatus according to the present invention, and FIG. 10 is a view taken along the line AA in FIG. The divided exposure apparatus includes a substrate support member 12 for supporting the substrate 1 and a photomask support member 13 for supporting the photomask 4.

  The substrate support member 12 can fix and support the substrate 1 over the entire surface of the substrate 1 opposite to the exposure surface 2 on which the photosensitive layer is formed, and can bend the substrate 1 by bending itself. . A plurality of vacuum suction holes 12 a connected to a negative pressure source (not shown) are provided on the upper surface of the substrate support member 12. The substrate 1 is sucked and held on the upper surface of the substrate support member 12 by vacuum suction from the vacuum suction hole 12a. Therefore, when the substrate support member 12 is bent, the substrate 1 can be bent together without causing a relative displacement from the substrate support member 12.

  The substrate support member 12 is supported by the base member 15 via the support column 14. The column 14 is connected to the lower center surface of the substrate support member 12 via a leaf spring (not shown) or the like, and does not prevent the substrate support member 12 from being curved.

  The photomask support member 13 includes a frame 16, a pressing plate spring 17, a spacer 18 that connects the frame 16 and the pressing plate spring 17, a coil spring 19, and a position restriction pin 20. The holding plate spring 17 holds the peripheral portion of the photomask 4 against the frame 16, while the peripheral portion of the photomask 4 resists the biasing force of the holding plate spring 17 when the photomask 4 is curved. To allow a predetermined amount of movement. The coil spring 19 and the position restriction pin 20 restrict the position of the photomask 4 within the support surface of the photomask support member 13.

  The divided exposure apparatus also has a first movement for moving at least one of the substrate support member 12 and the photomask support member 13 in the XYθ directions in order to align the entire region of the photomask 4 and the entire region of the substrate 1. Means (not shown) and second moving means (not shown) for moving at least one of the substrate support member 12 and the photomask support member 13 in order to bring the photomask 4 and the substrate 1 into contact with and away from each other. ). Since these first and second moving means have a known configuration, a detailed description thereof will be omitted.

  The divided exposure apparatus further includes a CCD camera 30 for reading alignment marks provided on the substrate 1 and the photomask 4 and a base member for moving the CCD camera 30 in the X direction (left and right direction in FIG. 9). And a camera Y direction moving device 33 provided in the camera X direction moving device 32 for moving the CCD camera 30 in the Y direction (perpendicular to the paper surface in FIG. 9). . The camera X direction moving device 32 and the camera Y direction moving device 33 allow the CCD camera 30 to move freely in the XY plane above the photomask 4.

  The split exposure apparatus is further provided with an X shutter 34 having one end fixed to the camera Y direction moving device 33 and the other end fixed to the base member 31.

  The X shutter 34 includes two flat plate members 34a and 34b arranged in the X direction. The two flat plate members 34a and 34b are connected to each other by a hinge 34c so as to be rotatable, and are configured to be foldable. The flat plate member 34a and the camera Y direction moving device 32, and the flat plate member 34b and the base member 31 are also connected to each other by a hinge 34d so as to be rotatable. Further, the end portion on the connecting portion side of the flat plate member 34b adjacent to the flat plate member 34a shields light passing between the flat plate member 34a and the flat plate member 34b, and thus the light shielding portion 34e bent to the flat plate member 34a side. have.

  Further, the camera Y-direction moving device 33 is provided with a saddle type shutter member 34f provided so as to extend as far as possible to a region close to the photomask. The vertical shutter 34 f constitutes a part of the X shutter 34. The tip of the saddle type shutter member 34f is bent toward the CCD camera 30 side. Thereby, it is possible to prevent light from entering the light shielding area covered with the flat plate members 34 a and 34 b in the area near the photomask 4. Further, since the light blocking portion 34e is provided in the flat plate member 34b, even when a gap is generated between the flat plate member 34a and the flat plate member 34b, the light between them can be blocked, and the light is reliably transmitted. Leakage can be prevented.

  The divided exposure apparatus is further provided with a Y shutter 36 in the form of a flat plate member movable in the Y direction. The Y shutter 36 is located between the photomask 4 and the saddle type shutter member 34f, and is moved in the Y direction by a moving device 36a provided on the base member 31, thereby selectively selecting a region along the Y direction. Shield.

  The X shutter 34 and the Y shutter 36 cooperate with each other to constitute a light shielding unit that shields light other than the divided areas to be exposed.

  The split exposure apparatus further includes a first deformation mechanism for bending the substrate support member 12 together with the substrate 1 around the first axial direction, and a second deformation mechanism for curving around the second axis. . These first and second deformation mechanisms will be described in detail below.

  The substrate support member 12 has a rectangular shape as a whole like the substrate 1, and the first pair of side edges 21a and 21b extending in the same direction as the first pair of sides 1a and 1b of the substrate 1 described above. And a second pair of side edges 21c and 21d extending in the same direction as the second pair of sides 1c and 1d of the substrate 1.

  A plurality of rods 22 extending downward are provided along each of the first pair of side edge portions 21a and 21b. Similarly, a plurality of rods 23 extending downward are provided along each of the second pair of side edge portions 21c and 21d.

  The first deformation mechanism includes a plurality of actuators 24 mounted on the base member 15 on each side of the first pair of side edge portions 21a and 21b, and a force attached to the rod tips of the plurality of actuators 24. A transmission bar 25, a plurality of force transmission rollers 26 provided along the force transmission bar, and the rod 22 receiving a pressing force from the roller 26 at the lower end are configured.

  Similarly, the second deformation mechanism includes an actuator 27, a force transmission bar 28, a force transmission roller 29, and a rod 23 provided on each side of the second pair of side edges 21c and 21d. Configured.

  When the actuator 24 of the first deformation mechanism is actuated to apply a pressing force to the lower end of the rod 22 via the force transmission bar 25 and the force transmission roller 26, the first pair of side edge portions 21a of the substrate supporting member 12; A bending moment is applied to 21 b, and the substrate support member 12 bends together with the substrate 1. The curvature at this time is that of a first axis (not shown) extending in the same direction as the first pair of sides 1a, 1b of the substrate 1 and the first pair of side edges 21a, 21b of the substrate support member 12. It occurs around. At this time, the substrate 1 is positioned so that the position of the first line segment 7a (see FIG. 1) on the exposure surface 2 does not change regardless of the amount of curvature around the first axis.

  Similarly, when the actuator 27 of the second deformation mechanism is operated to apply a bending moment to the second pair of side edges 21c and 21d of the substrate support member 12, the substrate support member 12 and the substrate 1 are Curved around a second axis (not shown) extending in the same direction as the second pair of sides 1c, 1d and the second pair of side edges 21c, 21d of the substrate support member 12. The substrate 1 is positioned so that the position of the second line segment 7b (see FIG. 1) on the exposure surface 2 does not change regardless of the amount of curvature around the second axis.

  The forces acting on the actuators facing each other are equal. However, the forces acting on adjacent actuators may be different. If the forces acting on the actuators adjacent to each other are different, the force transmission bar 25 or 28 is inclined and is different at different positions on the side edge of the substrate support member 12 along the first axis or the second axis. A bending moment of value occurs. As a result, the amount of curvature of the substrate support member 12 and the substrate 1 can be changed along the first axis or the second axis.

  When the substrate support member 12 is bent in a state where the substrate 1 and the photomask 4 are in uniform contact, the pattern surface 40 (the surface in contact with the substrate 1) of the photomask 4 having a considerable thickness is removed from the neutral axis. Because of the separation, the dimension between the pattern drawn on this pattern surface 40 and the second photomask alignment marks 4a-4d is scaled or enlarged or reduced relative to the original dimension. On the other hand, the dimension between the second substrate alignment marks 3a to 3d drawn on the exposure surface 2 of the thin substrate 1 does not change. Further, the position of the first line segment 7a and the second line segment 7b on the exposure surface 2 does not change regardless of the amount of bending. Therefore, the substrate 1 and the photomask 4 can be aligned by changing the amount of bending, and the continuity between adjacent substrate divided regions is maintained even if the alignment is performed for each substrate divided region.

  Next, the divided exposure method of the present invention will be described along with the movement of the divided exposure apparatus with reference to FIGS.

  First, as shown in FIG. 11, the substrate 1 is put on the substrate support member 12 below the photomask 4 and is held by suction. Thereafter, the CCD camera 30 moves to capture the first substrate alignment marks 8a to 8d on the substrate 1 and the first photomask alignment marks 10a to 10d on the photomask 4 in the visual field 5 (see FIG. 3). ). At least one of the substrate support member 12 and the photomask support member 13 so that the shift amount between the first substrate alignment mark and the first photomask alignment mark on the substrate 1 and the photomask 4 is averaged at four locations. One of them is moved in the XYθ directions relative to each other by a first moving means (not shown). When the deviation amounts are averaged, the overall alignment between the substrate 1 and the photomask 4 is completed.

  Next, at least one of the substrate support member 12 and the photomask support member 13 is moved relative to each other in the vertical direction (Z direction) by a second moving device (not shown), and the substrate 1 and the photomask 4 Are uniformly contacted with each other. After the substrate 1 and the photomask 4 are brought into close contact with each other, the overall alignment between them is confirmed again by the CCD camera 30. If alignment is not possible with sufficient accuracy, repeat the alignment operation.

  If it is confirmed that the overall alignment is good, the CCD camera 30 moves to the substrate division area to be exposed first. The CCD camera 30 moves in the X direction (left and right in FIG. 12) along with the camera Y direction moving device 33 along the camera X direction moving device 32 provided on the base 31. The CCD camera 30 moves in the Y direction (direction perpendicular to the paper surface in FIG. 12) along the camera Y direction moving device 33.

  When the CCD camera 30 moves in the X direction, the X shutter 34 (a pair of foldable flat plate members 34a and 34b and a saddle type shutter member 34f) moves in the X direction together with the CCD camera 30. On the other hand, the Y shutter 36 can move in the Y direction independently of the CCD camera 30.

  The CCD camera 30 that has moved to the substrate division region 2a to be exposed first detects the second alignment mark 3a on the substrate 1 and the second alignment mark 4a on the photomask 4 at four locations. Based on the detected data, a deviation amount between the second alignment marks is calculated at each position. In order to minimize the amount of displacement at each position, how much the substrate support member 12 (and the substrate 1 and the photomask 4) should be curved around the first axis, and around the second axis It is calculated and decided how much it should be curved. Based on the determined bending amount, a control device (not shown) operates the actuator 24 of the first deformation mechanism and / or the actuator 27 of the second deformation mechanism to bend the substrate support member 12 to a desired degree. (FIG. 12).

  When the alignment between the substrate division region 2a and the photomask division region 9a is completed in this way, the process proceeds to a stage where only the substrate division region 2a is exposed with ultraviolet rays 37 or the like. The X shutter 34 that moves in the X direction together with the CCD camera 30 is positioned by the camera X direction moving device 32 so that the leading edge of the saddle type shutter member 34f is aligned with the boundary of the divided area along the Y direction at this time. Will be adjusted. The CCD camera 30 is independently moved in the Y direction by the camera Y direction moving device 33 so as not to disturb the exposure, and stands by at a position outside the substrate dividing region 2a. The Y shutter member 36 moves in the Y direction and is positioned so that the edge thereof is aligned with the boundary of the divided region along the X direction. The light source (not shown) and the light shielding means (X shutter 34 and Y shutter 36) constitute light irradiation means. When an area other than the substrate division area 2a is shielded, the substrate division area 2a is irradiated with ultraviolet rays 37 or the like to complete the exposure.

  When the alignment and exposure in the substrate division region 2a are completed, the alignment and exposure in the substrate division regions 2b, 2c, and 2d are successively performed.

  When exposure is completed for all the substrate divided regions, a properly scaled pattern is transferred to the substrate 1.

  The light shielding means shown in this embodiment is merely an example, and other configurations can be used. For example, the light shielding plate can be moved independently of the camera. Further, a plurality of light shielding plates can be used in combination in a manner different from the present embodiment.

The top view of the board | substrate used for the exposure method of this invention. The top view of the photomask used for the exposure method of this invention. The top view which has arrange | positioned the board | substrate and the photomask facing each other. The top view which shows the state in which the board | substrate and the photomask were aligned as a whole. The top view which shows the state which aligned the first board | substrate division | segmentation area | region. The top view which shows the state which aligned the 2nd board | substrate division | segmentation area | region. The top view which shows the state which aligned the 3rd board | substrate division | segmentation area | region. The top view which shows the state which aligned the last board | substrate division | segmentation area | region. 1 is a schematic sectional side view of an exposure apparatus according to the present invention. The AA arrow line view in FIG. The schematic sectional side view which shows the state which aligns a board | substrate and a photomask entirely with the exposure apparatus of this invention. FIG. 3 is a schematic cross-sectional side view showing a state where a substrate and a photomask are brought into close contact with each other by the exposure apparatus of the present invention and a substrate support member is curved. The schematic sectional side view which shows the state which exposes a division area with the exposure apparatus of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 board | substrate, 1a and 1b 1st pair edge | side of a board | substrate, 1c and 1d 2nd pair edge | side of a board | substrate, 2 exposure surface, 2a-2d divided area, 3a-3d 2nd alignment mark of a board | substrate, 4 Photomask, 4a-4d Photomask second alignment mark, 5 Camera field of view, 6 Shield plate, 7a First line segment, 7b Second line segment, 8a-8d Substrate first alignment mark , 9a to 9d Photomask divided areas, 10a to 10d Photomask first alignment mark, 11 light shielding means, 11a light shielding plate, 11b light shielding plate, 12 substrate support member, 12a vacuum suction hole, 13 photomask support member, 14 struts, 15 base members, 16 frames, 17 presser leaf springs, 18 spacers, 19 coil springs, 20 position regulating pins, 21a and 21b substrate support First pair of side edges of member, 21c and 21d Second pair of side edges of substrate support member, 22 rod, 23 rod, 24 actuator, 25 force transmission bar, 26 force transmission roller, 27 actuator, 28 Force transmission bar, 29 Force transmission roller, 30 CCD camera, 31 Base, 32 Camera X direction moving device, 33 Camera Y direction moving device, 34 X shutter, 34a Flat plate member, 34b Flat plate member, 34c Hinge, 34d Hinge, 34e Part, 34f vertical shutter member, 36 Y shutter member, 37 ultraviolet rays, 40 pattern surface.

Claims (8)

The exposure surface of the substrate on which the photosensitive layer is formed is divided into a plurality of substrate division regions, and the pattern surface of the photomask on which the pattern is drawn is divided into a plurality of photomask division regions so as to correspond to each of the substrate division regions. In the divided exposure method of dividing and irradiating light through the photomask divided area to transfer a pattern drawn in the photomask divided area for each substrate divided area,
When the substrate is curved around a first axis extending in the same direction as the first pair of opposite sides of the substrate, the position on the exposure surface is unchanged regardless of the amount of curvature. When the substrate is bent around a second axis extending in the same direction as the second pair of sides facing each other, the position of the substrate is not limited regardless of the amount of the curve. The substrate dividing region is defined by a second line segment on the exposure surface that is invariant,
A position on the first and / or second line segment on the exposure surface and a position on the pattern surface corresponding to the position include a plurality of first substrate alignment marks and A plurality of first photomask alignment marks are provided respectively.
A second substrate alignment mark and a second photomask alignment mark are provided at a plurality of positions in each of the substrate division regions and at a plurality of positions in each of the photomask division regions corresponding to the plurality of positions. And
The exposure method is:
(1) placing the photomask facing the substrate so that the pattern surface of the photomask covers the exposed surface of the substrate;
(2) By using the first substrate alignment mark and the first photomask alignment mark to move the photomask and / or the substrate relative to each other in the XYθ direction, the entire region of the photomask And aligning the entire area of the substrate;
(3) uniformly contacting the photomask and the substrate;
(4) Using the second substrate alignment mark and the second photomask alignment mark while keeping the photomask and the substrate in contact with each other, the photomask and Aligning and exposing the substrate; and
Including
The step of aligning and exposing each of the substrate division regions comprises:
i) curving the substrate and the photomask around the first axis and / or around the second axis to substantially change a pattern dimension drawn on the photomask; Using the substrate alignment mark and the second photomask alignment mark to align one substrate division region and one photomask division region corresponding thereto,
ii) transferring the pattern drawn on the one photomask divided area onto the one substrate divided area by irradiating light onto the one substrate divided area through the one photomask divided area;
iii) performing the step i) and the step ii) for each of the other substrate division regions while keeping the photomask and the substrate in contact with each other;
Including,
Split exposure method. In the division | segmentation exposure method of Claim 1,
Each of the first substrate alignment marks is constituted by two mark elements arranged so as to sandwich the first line segment or the second line segment.
Split exposure method. In the divided exposure method according to claim 2,
The mark element also serves as a part of the second substrate alignment mark,
Split exposure method. In the division | segmentation exposure method in any one of Claim 1 thru | or 3,
The step of aligning the entire area of the photomask and the entire area of the substrate using the first substrate alignment mark and the first photomask alignment mark is performed by the first substrate alignment. The mark and the first photomask alignment mark are detected by a mark detection means, and a deviation amount between the first substrate alignment mark and the first photomask alignment mark is calculated based on the detected data. Then, according to the calculation result, it is performed by moving at least one of the substrate and the photomask with respect to the other,
The step of aligning the photomask and the substrate for each of the substrate division regions using the second substrate alignment mark and the second photomask alignment mark,
The mark detection means detects the second substrate alignment mark and the second photomask alignment mark for each substrate division region in a state where the substrate and the photomask are in uniform contact. The amount of deviation between the second substrate alignment mark and the second photomask alignment mark is calculated based on the detected data, and the amount of curvature around the first axis and / or according to the calculation result Determining the amount of bending about the second axis, and bending the substrate and the photomask by the determined amount of bending,
Exposure method. In the division | segmentation exposure method of Claim 4,
The mark detection means is a CCD camera,
Exposure method. The exposure surface of the substrate on which the photosensitive layer is formed is divided into a plurality of substrate division regions, and the pattern surface of the photomask on which the pattern is drawn is divided into a plurality of photomask division regions so as to correspond to each of the substrate division regions. A division exposure apparatus used in a division exposure method that divides and irradiates light through the photomask division area to transfer a pattern drawn in the photomask division area for each of the substrate division areas,
A substrate support member for fixing and supporting the substrate over the entire surface of the substrate opposite to the exposure surface, and a substrate support member capable of bending the substrate by bending itself;
A photomask support member for supporting the photomask so that the pattern surface faces the exposure surface;
First moving means for moving at least one of the substrate support member and the photomask support member to align the photomask and the substrate;
Second moving means for moving at least one of the substrate support member and the photomask support member to bring the photomask and the substrate into contact with and away from each other;
The first pair of opposing side edges of the substrate support member such that the substrate is curved a desired amount about a first axis extending in the same direction as the first pair of opposing sides of the substrate. A first deformation mechanism for acting on the substrate support member to bend,
A second pair of opposite side edges of the substrate support member such that the substrate is curved a desired amount about a second axis extending in the same direction as the second pair of opposite sides of the substrate. A second deformation mechanism for acting on the substrate support member and bending the substrate support member;
With
The first deformation mechanism bends the substrate support member so as to define a first line segment on the exposure surface whose position is invariant regardless of the amount of curvature of the substrate about the first axis. Is supposed to
The second deformation mechanism bends the substrate support member so as to define a second line segment on the exposure surface whose position is invariant regardless of the amount of bending of the substrate about the second axis. Is supposed to
A plurality of photomask divisions corresponding to the plurality of substrate division regions divided by the first line segment and the second line segment as control means for controlling the operation of the first and second deformation mechanisms. Control means for controlling the curvature of the substrate support member so as to substantially change the pattern to a desired dimension for each region, and thereby controlling the curvature of the substrate;
A light irradiating means for irradiating the exposure surface with light through the photomask divided region for each of the substrate divided regions;
The division exposure apparatus further comprising: The division exposure apparatus according to claim 6, wherein
The light irradiation means includes a light shielding means for shielding a portion other than the substrate division region to be exposed;
Divided exposure device. The division exposure apparatus according to claim 6 or 7,
The light irradiation means has a plurality of semiconductor light emitting elements, and the light irradiation means has a function capable of selectively emitting only the semiconductor light emitting elements corresponding to the substrate division region to be exposed among the plurality of semiconductor light emitting elements. ,
Divided exposure device.

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