TWI430048B - Exposure method and exposure device - Google Patents

Exposure method and exposure device Download PDF

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Publication number
TWI430048B
TWI430048B TW97116837A TW97116837A TWI430048B TW I430048 B TWI430048 B TW I430048B TW 97116837 A TW97116837 A TW 97116837A TW 97116837 A TW97116837 A TW 97116837A TW I430048 B TWI430048 B TW I430048B
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Taiwan
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substrate
supporting member
reticle
exposure apparatus
substrate supporting
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TW97116837A
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Chinese (zh)
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TW200912551A (en
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Ken Miyake
Toshihiro Takagi
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Sanei Giken Co Ltd
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Publication of TW200912551A publication Critical patent/TW200912551A/en
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Publication of TWI430048B publication Critical patent/TWI430048B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/7035Proximity or contact printers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70783Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09018Rigid curved substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09918Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0548Masks
    • H05K2203/056Using an artwork, i.e. a photomask for exposing photosensitive layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/302Bending a rigid substrate; Breaking rigid substrates by bending
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0008Apparatus or processes for manufacturing printed circuits for aligning or positioning of tools relative to the circuit board

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

曝光方法及曝光裝置Exposure method and exposure device

本發明是重疊配置描繪有圖案的光罩、及表面形成有感光層的基板,通過光罩來對基板照射光,藉此將圖案複製於基板之曝光方法及曝光裝置。The present invention is an exposure method and an exposure apparatus in which a mask on which a pattern is drawn and a substrate on which a photosensitive layer is formed are superposed, and the substrate is irradiated with light by a mask to thereby replicate the pattern on the substrate.

以往,為了在印刷電路基板等的表面形成導電圖案等,而廣泛進行曝光方法,其係重疊配置表面形成有感光層的基板、及描繪有圖案的光罩,通過光罩來對基板照射光,藉此將圖案複製於基板表面的感光層。Conventionally, in order to form a conductive pattern or the like on a surface of a printed circuit board or the like, an exposure method is widely used, in which a substrate on which a photosensitive layer is formed on a surface and a mask on which a pattern is drawn are placed, and the substrate is irradiated with light by a mask. Thereby, the pattern is reproduced on the photosensitive layer on the surface of the substrate.

在該曝光方法中是需要進行預設於基板的幾乎全面的多數的導電孔與被描繪於光罩的圖案之對位。就對位而言,在光罩與基板之彼此對應的位置所分別複數設置的對位標記會被利用。In the exposure method, it is necessary to perform alignment of a plurality of conductive holes which are preset to the substrate and a pattern drawn on the photomask. In terms of alignment, alignment marks that are plurally set at positions corresponding to each other of the reticle and the substrate are utilized.

將基板與光罩之各別設置的對位標記,在彼此重疊的狀態下,藉由CCD攝影機等的光感測器來讀取,根據該資料來運算基板與光罩之對位標記間的偏移量。按照該運算結果,以使對位標記彼此間的位置能夠一致的方式,使基板或光罩的其中之一移動於基板或光罩的面內所含的X軸方向、Y軸方向及θ方向,而進行基板與光罩的對位。The alignment marks provided on the respective substrates and the reticle are read by a photo sensor such as a CCD camera in a state of being overlapped with each other, and the alignment mark between the substrate and the reticle is calculated based on the data. Offset. According to the calculation result, one of the substrate or the photomask is moved in the X-axis direction, the Y-axis direction, and the θ direction included in the plane of the substrate or the mask so that the positions of the alignment marks can match each other. And the alignment of the substrate and the reticle is performed.

在進行基板與光罩的對位之後,通過光罩來對基板照射光,藉此描繪於光罩的圖案會被複製於基板表面的感光層上,完成曝光處理。After the alignment of the substrate and the reticle, the substrate is irradiated with light through the reticle, whereby the pattern drawn on the reticle is copied onto the photosensitive layer on the surface of the substrate to complete the exposure process.

但,附於光罩及基板的複數的對位標記間的距離,亦即對位標記間間距會因為製作誤差或溫度、溼度的變化、或至曝光工程為止的加熱處理等所造成的基板収縮等的變形而變動。因此,分別附於光罩及基板的複數的對位標記間間距會產生誤差。其結果,難以使光罩與基板的對位標記所有完全一致。However, the distance between the plurality of alignment marks attached to the mask and the substrate, that is, the distance between the alignment marks may be caused by manufacturing errors, temperature, humidity changes, or heat treatment until exposure engineering. Changes such as deformation. Therefore, the spacing between the plurality of alignment marks attached to the mask and the substrate may cause an error. As a result, it is difficult to completely match the alignment marks of the photomask and the substrate.

於是,可考量一種光罩與基板彼此均一地接觸且使光罩與基板相對彎曲成凹狀或凸狀的狀態下通過光罩來對基板的感光層照射光,藉此使被描繪於光罩的圖案的尺寸實質地變化而複製於基板之曝光方法。Therefore, it is possible to illuminate the photosensitive layer of the substrate through the reticle in a state in which the reticle and the substrate are uniformly contacted with each other and the reticle and the substrate are relatively curved in a concave or convex shape, thereby being drawn on the reticle. The size of the pattern is substantially changed to replicate the exposure method on the substrate.

參照圖15來說明此曝光方法的原理。The principle of this exposure method will be described with reference to FIG.

圖15A是表示同長度L的基板1與光罩2平面狀地均一接觸而重疊的狀態。在光罩2的一方主面2A描繪有圖案。另外,光罩2亦可使用令描繪有圖案的薄膜緊貼於玻璃板者。通常所被使用的玻璃製的光罩2的厚度T2是5mm前後。當基板1為印刷電路基板時,其厚度T1大多的情況是1mm以下。另外,分別以一點鎖線來表示光罩2的厚度T2的中心線2C及基板1的厚度T1的中心線2B。Fig. 15A shows a state in which the substrate 1 of the same length L and the mask 2 are uniformly in contact with each other in a planar manner. A pattern is drawn on one main surface 2A of the photomask 2. Further, the photomask 2 may be a method in which a film on which a pattern is drawn is adhered to a glass plate. The thickness T2 of the glass mask 2 which is usually used is about 5 mm. When the substrate 1 is a printed circuit board, the thickness T1 is often 1 mm or less. Further, the center line 2C of the thickness T2 of the mask 2 and the center line 2B of the thickness T1 of the substrate 1 are respectively indicated by a single lock line.

其次,圖15B是表示基板1與光罩2彼此接觸重疊的狀態下,以光罩2之基板1側能夠形成凹狀的方式,一起彎曲光罩2與基板1的狀態。如圖示,由於光罩2是厚度T2厚,因此以厚度T2的中心線2C作為境界線,基板1側會縮短,相反側會伸長。基板1是以厚度T1的中心線 2B作為境界線,光罩2側會伸長,相反側會縮短。但,由於基板1的厚度T1要比光罩來得相當薄,因此基板1的表背面的伸縮量些微。Next, FIG. 15B shows a state in which the substrate 1 and the reticle 2 are in contact with each other, and the reticle 2 and the substrate 1 are bent together so that the substrate 1 side of the reticle 2 can be formed in a concave shape. As shown in the figure, since the mask 2 has a thickness T2, the center line 2C of the thickness T2 is used as a boundary line, and the substrate 1 side is shortened, and the opposite side is elongated. The substrate 1 is the center line of the thickness T1 2B as the boundary line, the side of the mask 2 will stretch, and the opposite side will shorten. However, since the thickness T1 of the substrate 1 is considerably thinner than that of the photomask, the amount of expansion and contraction of the front and back surfaces of the substrate 1 is small.

其結果,在基板1與光罩2彼此連接的部份,光罩2對基板1的長度是僅光罩2之基板1側的面的縮小量S1與基板1之光罩2側的面的伸長量S2的和,實質上縮小。因此,若在此狀態下曝光,則被描繪於光罩2的主面2A的圖案是實質上與該值成比例縮小而複製於基板1。As a result, in the portion where the substrate 1 and the photomask 2 are connected to each other, the length of the photomask 2 to the substrate 1 is only the reduction amount S1 of the surface of the mask 2 on the substrate 1 side and the surface of the substrate 1 on the photomask 2 side. The sum of the elongations S2 is substantially reduced. Therefore, when exposed in this state, the pattern drawn on the main surface 2A of the mask 2 is substantially reduced in proportion to this value and reproduced on the substrate 1.

又,圖15C是表示基板1與光罩2彎曲成和圖15B時相反方向的狀態。此情況,在基板1與光罩2彼此連接的部份,光罩2對基板1的長度是僅光罩2之基板1側的面的伸長量S1’與基板1之光罩2側的面的縮小量S2’的和,實質上伸長。Further, Fig. 15C shows a state in which the substrate 1 and the mask 2 are bent in the opposite direction to that in Fig. 15B. In this case, in the portion where the substrate 1 and the photomask 2 are connected to each other, the length of the photomask 2 to the substrate 1 is only the amount of elongation S1 of the surface of the substrate 2 on the side of the mask 2 and the surface of the mask 2 on the side of the substrate 1. The sum of the reduced amount S2' is substantially elongated.

若在此狀態下曝光,則被描繪於光罩的主面2A的圖案是實質上與該值成比例擴大而複製於基板1。When exposed in this state, the pattern drawn on the main surface 2A of the mask is substantially enlarged in proportion to the value and reproduced on the substrate 1.

若根據此曝光方法,則即使基板的對位標記間間距的尺寸隨各基板而有所不同,還是可使一張光罩的對位標記間間距的尺寸實質上變化來接近基板的對位標記間間距的尺寸。其結果,可不損生產性,且壓制成本上昇,將描繪於光罩的圖案予以精度佳地複製於基板之所定的位置。According to this exposure method, even if the size of the pitch between the alignment marks of the substrate varies with each substrate, the size of the pitch between the alignment marks of one mask can be substantially changed to approach the alignment mark of the substrate. The size of the spacing. As a result, the pattern drawn on the photomask can be accurately reproduced at a predetermined position on the substrate without impairing the productivity and increasing the pressing cost.

參照圖11~圖14來說明該以往的曝光方法及使用於彼之以往的曝光裝置。The conventional exposure method and the conventional exposure apparatus used in the same will be described with reference to FIGS. 11 to 14 .

圖12是表示以往的曝光裝置的概略側剖面圖,圖11是省略光罩及光罩支持構件來顯示的平面圖。FIG. 12 is a schematic side cross-sectional view showing a conventional exposure apparatus, and FIG. 11 is a plan view showing the reticle and the reticle support member omitted.

以往的曝光裝置是具備:用以支持基板1的基板支持構件4、及用以支持基板支持構件4的基底構件5、及支持光罩2的外緣部的光罩支持構件12。The conventional exposure apparatus includes a substrate supporting member 4 for supporting the substrate 1 , a base member 5 for supporting the substrate supporting member 4 , and a mask supporting member 12 for supporting the outer edge portion of the mask 2 .

光罩支持構件12是形成藉由驅動機構(未圖示)來被引導機構(未圖示)引導,而可對基板支持構件4接近及背離之構造。The mask supporting member 12 is configured to be guided by a guiding mechanism (not shown) by a driving mechanism (not shown) to approach and deviate from the substrate supporting member 4.

又,光罩支持構件12是具備:框架15、供以規制光罩2的支持面內的位置之位置規制銷19及線圈彈簧18、供以容許光罩2對基板支持構件4往接近及背離的方向移動所定量之壓板彈簧16、及連接框架15與壓板彈簧16之間的間隔件17,藉由該等來形成支持光罩2的構造。Further, the reticle support member 12 is provided with a frame 15, a position regulating pin 19 for regulating the position in the support surface of the reticle 2, and a coil spring 18 for allowing the reticle 2 to approach and deviate from the substrate supporting member 4 The direction of the platen spring 16 and the spacer 17 between the connecting frame 15 and the platen spring 16 are moved in the direction, and the structure supporting the reticle 2 is formed by these.

在基板支持構件4上,以能夠包圍基板1的方式設有密封構件9。與基板1的曝光面1a呈相反側的面是抵接於基板支持構件4。基板支持構件4是藉由通過真空吸引孔10而作用的負壓來吸附保持基板1,且可藉由解放負壓來解除基板1的吸附保持。The sealing member 9 is provided on the substrate supporting member 4 so as to be able to surround the substrate 1. The surface opposite to the exposure surface 1a of the substrate 1 is in contact with the substrate supporting member 4. The substrate supporting member 4 adsorbs and holds the substrate 1 by a negative pressure acting through the vacuum suction hole 10, and the adsorption holding of the substrate 1 can be released by releasing the negative pressure.

在基底構件5設有用以對基板支持構件4賦予推壓力或拉伸力的致動器(actuator)6。在基板支持構件4與基底構件5之間,拘束基板支持構件4的傾斜以外的動作之複數的連結構件7會以能夠包圍致動器6的方式均一地配置。The base member 5 is provided with an actuator 6 for applying a pressing force or a tensile force to the substrate supporting member 4. Between the substrate supporting member 4 and the base member 5, a plurality of connecting members 7 that restrict the operation other than the inclination of the substrate supporting member 4 are uniformly disposed so as to surround the actuator 6.

首先,藉由CCD攝影機3等的光感測器來讀取基板1的對位標記與光罩2的對位標記,根據讀取的資料來運算基板1與光罩2的對位標記間的偏移量(圖12)。按 照此運算結果,令致動器6作動來使基板支持構件4與基板1一起彎曲成所望的一様球狀(圖13)。然後,使光罩支持構件15藉由驅動機構(未圖示)來朝向基板支持構件4下降,使光罩2與密封構件9接觸。藉此,藉由基板1、基板支持構件4及光罩2所包圍的空間區域會利用密封構件9來密封。其次,以真空泵(未圖示)等的手段來減壓此空間區域。藉由差壓,光罩2會以能夠仿照基板1的方式一邊彎曲一邊與基板1均一地接觸。以能夠仿照基板1的方式來使光罩2彎曲之下,在對向於基板1側的光罩表面所被描繪的對位標記間的間距會變化。First, the alignment mark of the substrate 1 and the alignment mark of the reticle 2 are read by a photo sensor such as the CCD camera 3, and the alignment mark between the substrate 1 and the reticle 2 is calculated based on the read data. Offset (Figure 12). press As a result of this calculation, the actuator 6 is actuated to bend the substrate supporting member 4 together with the substrate 1 into a desired spherical shape (Fig. 13). Then, the reticle support member 15 is lowered toward the substrate supporting member 4 by a driving mechanism (not shown), and the reticle 2 is brought into contact with the sealing member 9. Thereby, the space area surrounded by the substrate 1, the substrate supporting member 4, and the photomask 2 is sealed by the sealing member 9. Next, the space region is decompressed by means such as a vacuum pump (not shown). By the differential pressure, the photomask 2 is uniformly contacted with the substrate 1 while being bent while being patterned in the manner of the substrate 1. The distance between the alignment marks drawn on the surface of the mask facing the substrate 1 is changed in such a manner that the mask 2 can be bent in a manner that can be modeled on the substrate 1.

在此狀態下,再度以CCD攝影機3來讀取基板1的對位標記及光罩2的對位標記,根據所讀取的資料來運算基板1與光罩2之對位標記間的偏移量。若運算值為所定的偏移量以下,則使光8通過光罩2來對基板1照射而曝光(圖14)。In this state, the alignment mark of the substrate 1 and the alignment mark of the reticle 2 are read again by the CCD camera 3, and the offset between the alignment marks of the substrate 1 and the reticle 2 is calculated based on the read data. the amount. When the calculated value is equal to or smaller than the predetermined offset amount, the light 8 is irradiated onto the substrate 1 through the mask 2 to be exposed (FIG. 14).

然而,在上述以往的曝光方法及曝光裝置是不夠充分的。以往的曝光方法及曝光裝置,為了使基板彎曲成一様的球狀,只有在基板的變形一様時有効。實際的基板的尺寸變化是X軸方向及Y軸方向的其中之一方的變化要比另一方的變化更大。並且,有時所產生的尺寸變化會沿著X軸或Y軸而不一様。全都因為基板的變形不一様,所以在以往的曝光方法及曝光裝置是無法使光罩的對位標記與基板的對位標記間距一致,且無法使描繪於光罩的圖案與基板的導電孔等一致。However, the above conventional exposure method and exposure apparatus are not sufficient. In the conventional exposure method and exposure apparatus, in order to bend the substrate into a single spherical shape, it is effective only when the substrate is deformed once. The change in the size of the actual substrate is such that one of the X-axis direction and the Y-axis direction changes more than the other. Also, sometimes the resulting dimensional change will vary along the X or Y axis. Since the deformation of the substrate is not uniform, in the conventional exposure method and exposure apparatus, the alignment mark of the mask and the alignment mark pitch of the substrate cannot be matched, and the pattern drawn on the mask and the conductive hole of the substrate cannot be formed. Equal.

並且,就以往的曝光裝置的基板支持方法而言,基板的支持力不夠充分,在使基板支持構件彎曲時,在基板支持構件與基板之間產生相對性的位置偏移。因此,圖案尺寸的實質的變化量要比實用上必要的量少。Further, in the substrate supporting method of the conventional exposure apparatus, the supporting force of the substrate is insufficient, and when the substrate supporting member is bent, a relative positional shift occurs between the substrate supporting member and the substrate. Therefore, the substantial change in the size of the pattern is less than the amount practically necessary.

於是,本發明提供一種即使基板的變形不一様時,照樣可對應於此來使基板的刻度與光罩的刻度在全區域一致而進行曝光之曝光方法及曝光裝置,且以確保實用上充分的尺寸變化量為課題。Accordingly, the present invention provides an exposure method and an exposure apparatus which can perform exposure by aligning the scale of the substrate and the scale of the mask in the entire area even when the deformation of the substrate is not uniform, and ensuring practical use. The amount of dimensional change is a problem.

為了解決上述課題,若根據本發明,則可提供一種曝光方法,係將描繪有圖案的光罩配置於覆蓋表面形成感光層的基板的感光層之位置,使上述光罩與上述基板彼此均一地接觸後,通過上述光罩來對上述基板的感光層照射光,藉此將上述圖案複製於上述基板之曝光方法,其特徵為:準備:全體為四角形狀,具有互相對向的第一對的側緣部及互相對向的第二對的側緣部之板狀的基板支持構件,在上述光罩之描繪有上述圖案的表面上使上述感光層呈對向,使上述基板在上述基板支持構件的主面上不會有產生相對性的偏移之下固定支持,使上述基板支持構件,以延伸於和上述第一對的側緣部同方向的第一軸、或延伸於和上述第二對的側緣部同方 向的第二軸為中心,一邊個別地控制彎曲量,一邊使彎曲,藉此使上述基板支持構件和上述基板一起變形成所望的彎曲形狀,在上述光罩與上述基板彼此均一地接觸,且上述基板支持構件及上述基板變形成上述所望的彎曲形狀之狀態下,通過上述光罩來對上述感光層照射光,藉此來使上述圖案的尺寸實質地變化,而複製於上述基板。In order to solve the above problems, according to the present invention, an exposure method can be provided in which a mask having a pattern is disposed at a position of a photosensitive layer covering a substrate on which a photosensitive layer is formed, and the mask and the substrate are uniformly formed with each other. After the contact, the photosensitive layer of the substrate is irradiated with light by the photomask, thereby exposing the pattern to the substrate. The method of preparing is: the whole is a square shape, and has a first pair facing each other. a plate-shaped substrate supporting member having a side edge portion and a second pair of side edge portions facing each other, wherein the photosensitive layer is opposed to the surface on which the pattern is drawn on the mask, and the substrate is supported on the substrate The main surface of the member does not have a relative offset under the fixed support, so that the substrate supporting member extends in a first axis in the same direction as the side edge portion of the first pair, or extends to the above Two pairs of side edges The substrate support member and the substrate are deformed together into a desired curved shape while the second axis is centered, and the amount of bending is individually controlled, and the mask and the substrate are uniformly contacted with each other, and In a state where the substrate supporting member and the substrate are deformed into the desired curved shape, the photosensitive layer is irradiated with light by the photomask, whereby the size of the pattern is substantially changed and reproduced on the substrate.

較理想是使上述基板支持構件以上述第一軸為中心或以上述第二軸為中心來彎曲時,在分別沿著上述第一及第二軸的複數位置個別地控制上述基板支持構件的彎曲量。Preferably, when the substrate supporting member is bent about the first axis or centered on the second axis, the bending of the substrate supporting member is individually controlled at a plurality of positions along the first and second axes, respectively. the amount.

以上述第一軸為中心的上述基板支持構件的彎曲可藉由使力或力矩作用於上述第一對的側緣部來進行,以上述第二軸為中心的彎曲可藉由使力或力矩作用於上述第二對的側緣部來進行。The bending of the substrate supporting member centered on the first axis may be performed by applying a force or a moment to the side edges of the first pair, and the bending centered on the second axis may be caused by a force or a moment Acting on the side edges of the second pair described above.

亦可在上述光罩與上述基板之彼此對應的位置分別設有複數的對位標記,藉由標記檢測手段來檢測出該對位標記,根據檢測出的資料來運算上述光罩的上述對位標記與上述基板的上述對位標記之間的間距的偏移量,按照該運算結果來控制上述基板支持構件的彎曲量。A plurality of alignment marks may be respectively disposed at positions corresponding to the masks and the substrates, and the alignment marks are detected by the mark detecting means, and the alignment of the masks is calculated according to the detected data. The amount of deviation between the mark and the pitch mark of the substrate is controlled, and the amount of warpage of the substrate supporting member is controlled in accordance with the calculation result.

上述標記檢測手段可為CCD攝影機。The above-described mark detecting means may be a CCD camera.

在上述光罩上稍大地作成上述圖案,曝光時,使上述基板支持構件與上述基板一起對上述光罩彎曲成凸狀,藉此使上述基板之形成有上述感光層的面的尺寸實質地擴大而形成所定的大小,且使上述光罩仿照上述基板,藉此使 上述圖案的尺寸實質地縮小而形成所定的大小,然後,可將上述圖案複製於上述基板。The pattern is slightly formed on the mask, and the substrate supporting member and the substrate are bent in a convex shape together with the substrate during exposure, whereby the surface of the substrate on which the photosensitive layer is formed is substantially enlarged. Forming a predetermined size, and making the photomask follow the substrate, thereby The size of the pattern is substantially reduced to form a predetermined size, and then the pattern can be reproduced on the substrate.

若根據本發明,則可提供一種曝光裝置,係使用於:使描繪有圖案的光罩與形成有感光層的基板彼此均一地接觸後,通過上述光罩來對上述基板的感光層照射光,藉此將上述圖案複製於上述基板之曝光方法的曝光裝置,其特徵係具備:基板支持構件,其係用以在和形成有上述感光層的面相反側的上述基板的面全體固定支持上述基板之基板支持構件,具有:互相對向的第一對的側緣部、及互相對向的第二對的側緣部、及用以在不使上述基板產生相對性的偏移之下固定支持的固定支持機構;光罩支持構件,其係以描繪有上述圖案的上述光罩的表面能夠對向於上述感光層之方式用以支持上述光罩;驅動機構,其係以上述光罩能夠對上述基板均一地接觸仿照之方式用以使上述基板支持構件與上述光罩支持構件彼此相對移動;複數的第一作用點,其係沿著上述基板支持構件的上述第一對的側緣部而設置;第一變形機構,其係使力或力矩對上述複數的第一作用點作用,藉此使上述基板支持構件與上述基板一起以延伸於和上述第一對的側緣部同方向的第一軸為中心彎曲;複數的第二作用點,其係沿著上述基板支持構件的上述第二對的側緣部而設置; 第二變形機構,其係使力或力矩對上述複數的第二作用點作用,藉此使上述基板支持構件與上述基板一起以延伸於和上述第二對的側緣部同方向的第二軸為中心彎曲;引導機構,其係於上述驅動機構的作動時用以引導上述基板支持構件與上述光罩支持構件的相對移動;及光照射裝置,其係用以通過上述光罩來對上述基板的上述感光層照射光。According to the present invention, it is possible to provide an exposure apparatus for uniformly illuminating a photosensitive layer of the substrate by the photomask after the mask having the pattern and the substrate on which the photosensitive layer is formed are uniformly contacted with each other. An exposure apparatus for embedding the pattern in the exposure method of the substrate, characterized in that the substrate supporting member is configured to fix and support the substrate on the entire surface of the substrate opposite to the surface on which the photosensitive layer is formed. The substrate supporting member has: a side edge portion of the first pair facing each other, and a side edge portion of the second pair facing each other, and a fixing support for preventing the relative displacement of the substrate a fixing support mechanism; the reticle supporting member is configured to support the reticle by a surface of the reticle in which the pattern is drawn to be opposite to the photosensitive layer; and the driving mechanism is capable of aligning the reticle The substrate is uniformly contacted in a manner to move the substrate supporting member and the reticle supporting member relative to each other; a plurality of first acting points are along Providing a side edge portion of the first pair of the substrate supporting members; the first deforming mechanism is configured to apply a force or a moment to the plurality of first acting points, thereby extending the substrate supporting member with the substrate a first axis that is in the same direction as the side edge portion of the first pair is curved; a plurality of second action points are disposed along a side edge portion of the second pair of the substrate supporting member; a second deformation mechanism that applies a force or a moment to the second plurality of points of action, whereby the substrate supporting member and the substrate extend along a second axis extending in the same direction as the side edges of the second pair a centrally bent; a guiding mechanism for guiding relative movement of the substrate supporting member and the reticle supporting member when the driving mechanism is actuated; and a light illuminating device for aligning the substrate by the reticle The above photosensitive layer illuminates light.

上述第一變形機構可將分別使作用於上述複數的第一作用點的力或力矩的大小控制成所定的量,上述第二變形機構可將分別使作用於上述複數的第二作用點的力或力矩的大小控制成所定的量。The first deformation mechanism may control the magnitude of the force or moment acting on the plurality of first action points to a predetermined amount, and the second deformation mechanism may respectively force the second action point acting on the plurality Or the magnitude of the moment is controlled to a predetermined amount.

上述第一變形機構或上述第二變形機構可具備馬達。又,上述第一變形機構或上述第二變形機構可具有空氣壓力驅動的機構。The first deformation mechanism or the second deformation mechanism may include a motor. Further, the first deformation mechanism or the second deformation mechanism may have a mechanism that is driven by air pressure.

又,可具有:標記檢測手段,其係用以檢測出分別設置於上述光罩與上述基板之彼此對應的位置之複數的對位標記;運算手段,其係用以根據藉由上述標記檢測手段所檢測出的資料來運算上述光罩的上述對位標記與上述基板的上述對位標記之間的間距的偏移量,上述第一變形機構及上述第二變形機構的至少一方,係按照上述運算手段的運算結果來調整使作用於上述第一作用點及上述第二作用點的至少一方之力或力矩的大小,而使能夠控制上述基板支持構件的彎曲量。Moreover, the method may be: a mark detecting means for detecting a plurality of alignment marks respectively disposed at positions corresponding to the masks and the substrates; and an operation means for using the mark detecting means The detected data calculates an amount of shift between the alignment mark of the photomask and the alignment mark of the substrate, and at least one of the first deformation mechanism and the second deformation mechanism is as described above. As a result of the calculation by the calculation means, the amount of force or moment acting on at least one of the first action point and the second action point is adjusted to control the amount of bending of the substrate supporting member.

上述光罩支持構件可具有容許上述光罩對上述基板往接近及背離的方向移動所定量之構造。The reticle support member may have a configuration that allows the photomask to move in a direction in which the reticle is moved toward and away from the substrate.

上述光罩支持構件可具有用以規制上述光罩的上述光罩支持構件的支持面內的位置之位置規制機構。The reticle support member may have a position regulating mechanism for regulating a position within the support surface of the reticle support member of the reticle.

上述固定支持機構可包含:形成於上述基板支持構件之固定支持上述基板的面之複數的溝或峰部。The fixing support mechanism may include a plurality of grooves or peaks formed on a surface of the substrate supporting member that is fixed to support the substrate.

上述固定支持機構可包含:形成於上述基板支持構件之固定支持上述基板的面之複數的溝、及設於上述溝的底部,連接至負壓源的至少一個的真空吸引孔。The fixing support mechanism may include a plurality of grooves formed in a surface of the substrate supporting member fixedly supporting the substrate, and a vacuum suction hole provided at at least one of the bottom of the groove and connected to at least one of the negative pressure sources.

設於上述複數的溝的底部之上述至少一個的真空吸引孔可被連接至每個溝或每個包含複數的溝的群之負壓源。The at least one vacuum suction hole provided at the bottom of the plurality of grooves may be connected to each groove or a negative pressure source of each group including a plurality of grooves.

上述基板支持構件的厚度可為5mm以上。The substrate supporting member may have a thickness of 5 mm or more.

上述第一變形機構及上述第二變形機構可被載置於用以支持上述基板支持構件的基底構件。The first deformation mechanism and the second deformation mechanism may be placed on a base member for supporting the substrate supporting member.

如此,若根據本發明,則實用上可確保充分的尺寸變化量,且即使基板以各種的形態變形,還是可予以對應來使基板及光罩彎曲,因此可使基板的刻度與光罩的刻度在全區域一致而進行曝光。As described above, according to the present invention, it is practically possible to secure a sufficient amount of dimensional change, and even if the substrate is deformed in various forms, the substrate and the mask can be bent correspondingly, so that the scale of the substrate and the scale of the mask can be made. Exposure is consistent across the region.

參照圖來說明上述本發明的內容。圖9A~圖9C是說明本發明的原理的剖面圖。圖9A是表示以在和基板支持構件11之間不會產生相對性的位移之方式緊貼固定的基板1與光罩2會平面狀均一地接觸重疊的狀態。The contents of the present invention described above will be described with reference to the drawings. 9A to 9C are cross-sectional views illustrating the principle of the present invention. FIG. 9A shows a state in which the substrate 1 and the photomask 2 which are in close contact with each other without causing a relative displacement with the substrate supporting member 11 are uniformly overlapped in a planar shape.

在光罩2的一方主面2A被描繪有圖案。另外,光罩2可使用使描繪有圖案的薄膜緊貼於玻璃板者。通常所被使用的玻璃製光罩2的厚度T2是5mm前後,當基板1為印刷電路基板時,基板1的厚度T1大多是1mm以下。另外,分別以一點鎖線來表示光罩2的厚度T2的中心線2C及將基板1的厚度T1與基板支持構件4的厚度T3合起來的厚度的中心線2D。A pattern is drawn on one main surface 2A of the photomask 2. Further, the photomask 2 can be used by adhering a film on which a pattern is drawn to a glass plate. Generally, the thickness T2 of the glass mask 2 to be used is about 5 mm, and when the substrate 1 is a printed circuit board, the thickness T1 of the substrate 1 is often 1 mm or less. Further, the center line 2C of the thickness T2 of the photomask 2 and the center line 2D of the thickness which combines the thickness T1 of the substrate 1 and the thickness T3 of the substrate supporting member 4 are indicated by a single lock line.

其次,圖9B是表示基板1與光罩2互相接觸重疊的狀態,以光罩2之基板1側能夠形成凹狀的方式,一起彎曲光罩2與基板1及基板支持構件11的狀態。如圖示,光罩2是以厚度T2的中心線2C作為境界線,基板1側縮短,相反側伸長。Next, FIG. 9B shows a state in which the substrate 1 and the reticle 2 are in contact with each other, and the reticle 2 and the substrate 1 and the substrate supporting member 11 are bent together so that the substrate 1 side of the reticle 2 can be formed in a concave shape. As shown in the figure, the photomask 2 has a center line 2C of a thickness T2 as a boundary line, and the substrate 1 side is shortened, and the opposite side is elongated.

另一方面,基板1是以和基板支持構件11之間不會產生相對性的位置偏移之方式在被緊貼固定的狀態下彎曲,因此以基板1的厚度T1加上基板支持構件11的厚度T3之厚度的中心線2D為境界線,全體位於伸長側。其結果,面向光罩2側的基板1的面僅伸長S3。On the other hand, the substrate 1 is bent in a state in which it is tightly attached to the substrate supporting member 11 so as not to be in a positional relationship with the substrate supporting member 11, so that the substrate supporting member 11 is added with the thickness T1 of the substrate 1. The center line 2D of the thickness of the thickness T3 is a boundary line, and the whole is located on the extension side. As a result, the surface of the substrate 1 facing the mask 2 side is only elongated by S3.

相較於圖15之單體的基板1,與基板支持構件11一體化之圖9的基板1,可想像僅基板支持構件11的厚度T3部份便變厚。因此,圖9B之基板1的伸長量S3與圖15B之基板1的伸長量S2作比較,變大。其結果,基板1與光罩2彼此連接的部份之光罩2對基板1的長度是僅光罩2之基板1側的面的縮小量S1與基板1之光罩2側的面的伸長量S3的和,實質上縮小。若在此狀態下曝光 ,則使描繪於光罩2的主面2A之圖案實質上與該值成比例縮小而複製於基板。As compared with the substrate 1 of the single body of FIG. 15 and the substrate 1 of FIG. 9 integrated with the substrate supporting member 11, it is conceivable that only the thickness T3 portion of the substrate supporting member 11 becomes thick. Therefore, the elongation S3 of the substrate 1 of Fig. 9B is made larger as compared with the elongation S2 of the substrate 1 of Fig. 15B. As a result, the length of the mask 2 of the portion where the substrate 1 and the mask 2 are connected to each other is the length S1 of only the surface of the substrate 2 on the side of the mask 2 and the surface of the mask 2 on the side of the mask 2 The sum of the quantities S3 is substantially reduced. If exposed in this state Then, the pattern drawn on the main surface 2A of the mask 2 is substantially reduced in proportion to the value and reproduced on the substrate.

又,圖9C是表示基板1與光罩2彎曲於與圖9B的情況時相反方向的狀態。此情況,基板1與光罩2彼此連接的部份之光罩2對基板1的長度,對基板1的長度而言,僅光罩2之基板1側的面的伸長量S1’與基板1之光罩2側的面的縮小量S3’的和,實質伸長。Moreover, FIG. 9C shows a state in which the substrate 1 and the photomask 2 are bent in the opposite direction to the case of FIG. 9B. In this case, the length of the photomask 2 of the portion where the substrate 1 and the photomask 2 are connected to each other is the length of the substrate 1, and the length of the substrate 1 is only the elongation S1' of the surface of the substrate 1 on the side of the photomask 2 and the substrate 1 The sum of the reduction amounts S3' of the faces on the side of the mask 2 is substantially elongated.

哪個情況皆是形成S3>S2、S3’>S2’,因此比起以往可確保更大的尺寸變化量。In either case, S3>S2 and S3'>S2' are formed, so that a larger dimensional change amount can be secured than in the past.

由以上說明可知,只要在使彎曲時沒有障礙,基板支持構件11的厚度T3是越厚越有利。這是因為若為同彎曲量,則基板支持構件11的厚度T3越厚,基板1的尺寸變化量形成越大。因此,基板支持構件11的厚度最好為5mm以上。As apparent from the above description, it is advantageous that the thickness T3 of the substrate supporting member 11 is thicker as long as there is no obstacle when bending. This is because the thickness T3 of the substrate supporting member 11 is thicker as the amount of bending is the same, and the dimensional change amount of the substrate 1 is formed larger. Therefore, the thickness of the substrate supporting member 11 is preferably 5 mm or more.

圖1~圖3是表示本發明之一實施形態的曝光裝置。曝光裝置是具備:用以支持基板1的基板支持構件11、及用以支持光罩2的光罩支持構件12、及以光罩2對基板1能夠均一地接觸仿照之方式使基板支持構件11與光罩支持構件12相對移動的驅動機構(未圖示)、及用以在驅動機構的作動時引導基板支持構件11與光罩支持構件12的相對移動之引導機構(未圖示)、及用以通過光罩2來對基板1的感光層照射光之光照射裝置(未圖示)。1 to 3 show an exposure apparatus according to an embodiment of the present invention. The exposure apparatus includes a substrate supporting member 11 for supporting the substrate 1, a mask supporting member 12 for supporting the mask 2, and a substrate supporting member 11 in such a manner that the substrate 2 can be uniformly contacted with the mask 2 a driving mechanism (not shown) that moves relative to the reticle support member 12, and a guiding mechanism (not shown) for guiding relative movement of the substrate supporting member 11 and the reticle supporting member 12 when the driving mechanism is actuated, and A light irradiation device (not shown) for irradiating the photosensitive layer of the substrate 1 with light through the mask 2.

在基板支持構件11的上面設有複數的溝(在此是只 顯示溝38)。在溝的底部設有連接至負壓源的至少一個的真空吸引孔(在此是只顯示真空吸引孔38a)。該等的溝及真空吸引孔是構成用以使基板1固定支持於基板支持構件11的主面之固定支持機構。基板支持構件11可藉由來自真空吸引孔38a等的真空吸引來將基板1吸附保持於上面。以往是在基板支持構件的表面只存在真空吸引孔,溝未被設置(參照圖12),但在本發明則是設置與真空吸引孔相關的溝。藉此,可利用更大的面積來吸附保持基板。因此,比起以往可更確實地固定保持基板,防止基板與基板支持構件之間的相對性的位置偏移發生。有關固定支持機構會根據圖10在往後詳述。A plurality of grooves are provided on the upper surface of the substrate supporting member 11 (here is only Display groove 38). At least one vacuum suction hole (here, only the vacuum suction hole 38a is shown) connected to the negative pressure source is provided at the bottom of the groove. These grooves and vacuum suction holes constitute a fixing support mechanism for fixing the substrate 1 to the main surface of the substrate supporting member 11. The substrate supporting member 11 can adsorb and hold the substrate 1 thereon by vacuum suction from the vacuum suction holes 38a and the like. Conventionally, only a vacuum suction hole is present on the surface of the substrate supporting member, and the groove is not provided (see FIG. 12). However, in the present invention, a groove associated with the vacuum suction hole is provided. Thereby, a larger area can be utilized to adsorb and hold the substrate. Therefore, the holding substrate can be fixed more reliably than in the related art, and the relative positional deviation between the substrate and the substrate supporting member can be prevented from occurring. The fixed support mechanism will be detailed later in accordance with Figure 10.

基板支持構件11是經由支柱13來支持於基底構件14。支柱13是經由板彈簧(未圖示)等來與基板支持構件11的中央下面連接,不妨礙基板支持構件11彎曲。The substrate supporting member 11 is supported by the base member 14 via the pillars 13. The pillar 13 is connected to the center lower surface of the substrate supporting member 11 via a leaf spring (not shown) or the like, and does not prevent the substrate supporting member 11 from being bent.

光罩支持構件12是具備:框架15、壓板彈簧16之類的彈性要素、連接框架15與壓板彈簧16之間的間隔件17、線圈彈簧18之類的偏倚要素、及位置規制銷19。壓板彈簧16是在光罩2對基板1接近及背離時,容許光罩2對基板1往接近及背離的方向移動所定量。線圈彈簧18及位置規制銷19是在於規制光罩2對光罩支持構件12之光罩支持構件的支持面內的位置。The mask supporting member 12 is provided with an elastic element such as the frame 15 and the plate spring 16 , a spacer 17 connecting the frame 15 and the plate spring 16 , a biasing element such as the coil spring 18 , and a position regulating pin 19 . The platen spring 16 is a quantitative amount that allows the mask 2 to move toward and away from the substrate 1 when the mask 2 approaches and deviates from the substrate 1. The coil spring 18 and the position regulating pin 19 are positions that regulate the support surface of the reticle 2 to the reticle support member of the reticle support member 12.

基板支持構件11是全體為四角形狀,具有彼此對向的第一對的側緣部20、及彼此對向的第二對的側緣部21。分別沿著第一對的側緣部20設有延伸至下方的複數的 桿(rod)22。同様的,分別沿著第二對的側緣部21設有延伸至下方的複數的桿23。桿22被安裝於側緣部20之處是形成為了使基板支持構件11彎曲而令力或力矩作用之複數的第一作用點。同様的,桿23被安裝於側緣部21之處是形成為了使基板支持構件11彎曲而令力或力矩作用之複數的第二作用點。The substrate supporting member 11 has a quadrangular shape as a whole, and has a first pair of side edge portions 20 opposed to each other and a second pair of side edge portions 21 opposed to each other. Each of the side edges 20 of the first pair is provided with a plurality of extending to the lower side Rod 22 . At the same time, a plurality of rods 23 extending to the lower side are provided along the side edges 21 of the second pair, respectively. Where the rod 22 is attached to the side edge portion 20 is a first point of action that forms a plurality of forces or moments for bending the substrate supporting member 11. At the same time, where the rod 23 is attached to the side edge portion 21, a second action point is formed which forms a plurality of forces or moments for bending the substrate supporting member 11.

曝光裝置是具備:用以使基板支持構件11彎曲之一對的第一變形機構24、及一對的第二變形機構25。第一變形機構24是具有:被載置於基底構件14之複數的致動器26、及安裝於複數的致動器26的桿前端之力傳達棒27、及沿著棒27來複數設置之力傳達滾輪28。各個滾輪28是以能夠對桿22的下端賦予推壓力之方式定位。第二變形機構25也是形成同様的構成,具有複數的致動器29、力傳達棒30及力傳達滾輪31。The exposure apparatus includes a first deformation mechanism 24 for bending one pair of the substrate supporting members 11, and a pair of second deformation mechanisms 25. The first deformation mechanism 24 includes a plurality of actuators 26 that are placed on the base member 14, and a force transmission rod 27 that is attached to the distal end of the rod of the plurality of actuators 26, and is provided in plural along the rod 27. The force conveys the roller 28. Each of the rollers 28 is positioned to impart a pressing force to the lower end of the rod 22. The second deformation mechanism 25 is also configured to have the same structure, and has a plurality of actuators 29, a force transmission bar 30, and a force transmission roller 31.

致動器26,29可為利用馬達者。或者,致動器26,29亦可為利用空氣壓力之活塞.汽缸型者。The actuators 26, 29 can be those utilizing a motor. Alternatively, the actuators 26, 29 may also be pistons that utilize air pressure. Cylinder type.

若使第一變形機構24的致動器26作動,經由力傳達棒27及力傳達滾輪28來對桿22的下端賦予推壓力,則會對基板支持構件11的第一對的側緣部20之桿22的安裝處,亦即複數的第一作用點施加彎曲力矩。藉由此彎曲力矩,基板支持構件11會彎曲於延伸至與側緣部20同方向的第一軸32的周圍。同様的,若使第二變形機構25的致動器29作動,則基板支持構件11會彎曲於延伸至與側緣部21同方向的第二軸33的周圍。When the actuator 26 of the first deforming mechanism 24 is actuated, the pressing force is applied to the lower end of the rod 22 via the force transmitting rod 27 and the force transmitting roller 28, and the side edge portion 20 of the first pair of the substrate supporting member 11 is applied. The installation of the rod 22, that is, the plurality of first points of application, applies a bending moment. By this bending moment, the substrate supporting member 11 is bent to extend around the first shaft 32 in the same direction as the side edge portion 20. In the same manner, when the actuator 29 of the second deforming mechanism 25 is actuated, the substrate supporting member 11 is bent to extend around the second shaft 33 in the same direction as the side edge portion 21.

基板1是與基板支持構件11一起彎曲。基板1彎曲後,只要使光罩2移動成可與基板1均一地接觸,則光罩2也會仿照基板1而彎曲。The substrate 1 is bent together with the substrate supporting member 11. After the substrate 1 is bent, if the photomask 2 is moved so as to be in uniform contact with the substrate 1, the photomask 2 is bent in accordance with the substrate 1.

稍大地作成被描繪於光罩2之對向於基板1的面的圖案,以能夠經常實質地縮小圖案的尺寸來複製之方式,使基板1對光罩2彎曲成凸狀,令光罩2仿照基板1彎曲的狀態下進行曝光為理想。The pattern drawn on the surface of the reticle 2 facing the substrate 1 is slightly formed, and the substrate 1 is bent into a convex shape so that the reticle 2 can be bent in a manner that can be substantially reduced in size. It is preferable to perform exposure in a state in which the substrate 1 is bent.

因為藉由使光罩2從基板1的中央往周邊慢慢地仿照彎曲,空氣被捕捉於雙方之間的可能性會變小。Since the mask 2 is slowly curved from the center of the substrate 1 to the periphery, the possibility that air is trapped between the both sides becomes small.

亦可在基板1與光罩2均一地接觸後,使基板1及基板支持構件11彎曲,光罩2會仿照,藉此雙方會彎曲。Alternatively, after the substrate 1 and the photomask 2 are uniformly contacted, the substrate 1 and the substrate supporting member 11 are bent, and the photomask 2 is patterned, whereby both of them are bent.

在本發明中是使第一變形機構24與第二變形機構25個別地作動,藉此可個別地控制基板支持構件11的第一軸32周圍的彎曲量、及第二軸33周圍的彎曲量。In the present invention, the first deforming mechanism 24 and the second deforming mechanism 25 are individually operated, whereby the amount of bending around the first shaft 32 of the substrate supporting member 11 and the amount of bending around the second shaft 33 can be individually controlled. .

又,藉由使第一變形機構24的複數個致動器26的各個作動量形成相異,可將作用於各個桿22的力,甚至各作用於複數的第一作用點的力矩大小控制成調整於所定量。在第二變形機構25中亦可同様的作動。藉此,在使基板支持構件11彎曲時,可在沿著第一軸32或第二軸33的複數位置個別控制基板支持構件11的彎曲量。Further, by making the respective actuator amounts of the plurality of actuators 26 of the first deforming mechanism 24 different, the force acting on each of the rods 22 and even the magnitude of the moment acting on the plurality of first acting points can be controlled to Adjust to the amount quantified. In the second deformation mechanism 25, the same operation can be performed. Thereby, when the substrate supporting member 11 is bent, the amount of bending of the substrate supporting member 11 can be individually controlled at a plurality of positions along the first axis 32 or the second axis 33.

藉由使用力傳達棒27,30,所使用的致動器26,29的數量可比力矩的作用點的數量更少。作用點的數量可藉由增減力傳達滾輪28,31的數量來任意地改變。若對一個的力傳達棒為2個的致動器,則可連續改變沿著軸32 ,33的複數位置之基板支持構件11的彎曲量。如此,力傳達棒27,30可形成構造的簡素化及控制的容易化。By using the force transmitting bars 27, 30, the number of actuators 26, 29 used can be less than the number of points of action of the moment. The number of points of action can be arbitrarily changed by the amount of the force-increasing force transmitting rollers 28, 31. If the force transmission bar for one is two actuators, it can be continuously changed along the axis 32. The amount of bending of the substrate supporting member 11 at the plural position of 33. Thus, the force transmitting bars 27, 30 can be simplified in construction and easy to control.

參照圖4~圖6來說明有關利用本發明之彎曲量的個別控制所帶來的優點。The advantages brought about by the individual control using the bending amount of the present invention will be described with reference to Figs. 4 to 6 .

圖4~圖6是表示基板1與光罩2彼此重疊的狀態。4 to 6 show a state in which the substrate 1 and the photomask 2 are overlapped with each other.

在光罩2與基板1的彼此對應的位置分別設有複數的對位標記34,35(就圖示例而言分別為4個)。A plurality of alignment marks 34, 35 (four in the illustrated example) are respectively provided at positions corresponding to the mask 2 and the substrate 1.

在對位基板1與光罩2時,是藉由CCD攝影機之類的標記檢測手段來檢測出對位標記34,35,根據檢測出的資料來運算對位標記34,35間的間距的偏移量,按照此運算結果來控制彎曲量。本發明的曝光裝置,為了此目的,可具備標記檢測手段及運算手段。In the case of the registration substrate 1 and the photomask 2, the alignment marks 34, 35 are detected by a mark detecting means such as a CCD camera, and the pitch of the alignment marks 34, 35 is calculated based on the detected data. The amount of shift is controlled according to the result of this operation. The exposure apparatus of the present invention may be provided with a mark detecting means and an arithmetic means for this purpose.

圖4是想用以往的曝光方法的彎曲方法來使對位標記彼此間一致時的模式圖。4 is a schematic view showing a state in which alignment marks are used to match each other by a bending method of a conventional exposure method.

就以往的彎曲方法而言,由於基板1被彎曲成一様的球狀,因此若使光罩2仿照於此,則光罩2的對位標記34只能以圖中的縱方向及橫方向皆分別決定的比例來使間距變化。In the conventional bending method, since the substrate 1 is bent into a spherical shape, if the reticle 2 is patterned, the alignment mark 34 of the reticle 2 can only be in the vertical direction and the horizontal direction in the figure. The ratios are determined separately to vary the spacing.

因此,即使令光罩2的對位標記34a~34d對準基板1的對位標記35a~35d,實際上只能接近到對位標記34a’~34d’的位置。Therefore, even if the alignment marks 34a to 34d of the mask 2 are aligned with the alignment marks 35a to 35d of the substrate 1, the positions of the alignment marks 34a' to 34d' can be practically obtained.

結果,無法使光罩2的對位標記34一致於基板1的對位標記35。As a result, the alignment mark 34 of the photomask 2 cannot be made coincident with the alignment mark 35 of the substrate 1.

圖5是說明藉由本發明的曝光方法之一形態,即使對 位標記的位置為圖4所示的情況,還是可使光罩2的對位標記34一致於基板1的對位標記35。Figure 5 is a view showing one form of the exposure method by the present invention, even if The position of the bit mark is the case shown in FIG. 4, and the alignment mark 34 of the reticle 2 can be made coincident with the alignment mark 35 of the substrate 1.

就本發明而言,可藉由第一變形機構來分別對第一對的側緣部施加彼此相等大小的所定之力f1,f2(或力矩),藉由第二變形機構來分別對第二對的側緣部施加彼此相等但與f1,f2相異大小的力f3,f4(或力矩),因此可個別地控制圖中的橫方向軸周圍的基板支持構件的彎曲量及縱方向軸周圍的基板支持構件的彎曲量。In the present invention, a predetermined force f1, f2 (or moment) of equal magnitude to each other is applied to the side edges of the first pair by the first deforming mechanism, respectively, by the second deforming mechanism. The side edges of the pair are applied with forces f3, f4 (or moments) equal to each other but different from f1, f2, so that the amount of bending of the substrate supporting member around the lateral axis in the drawing and the circumference of the longitudinal axis can be individually controlled. The amount of bending of the substrate support member.

隨之,基板1的彎曲量也會被同様地控制,因此光罩2仿照基板1而產生之光罩2的對位標記34的間距變化在圖中的橫方向及縱方向是形成相異的量。Accordingly, the amount of bending of the substrate 1 is also controlled in the same manner. Therefore, the change in the pitch of the alignment mark 34 of the mask 2 which is produced by the mask 2 in accordance with the substrate 1 is different in the lateral direction and the longitudinal direction in the drawing. the amount.

因此,如圖5所示,可藉由選擇所定的力f1、f2(或力矩)及力f3、f4(或力矩)來使光罩2的對位標記34一致於基板1的對位標記35。Therefore, as shown in FIG. 5, the alignment mark 34 of the reticle 2 can be aligned with the alignment mark 35 of the substrate 1 by selecting the predetermined force f1, f2 (or moment) and the force f3, f4 (or moment). .

圖6是說明即使基板1為更複雜變形時,還是可以使光罩2的對位標記34一致於基板1的對位標記35。FIG. 6 is a view for explaining that the alignment mark 34 of the photomask 2 can be aligned with the alignment mark 35 of the substrate 1 even when the substrate 1 is more complicatedly deformed.

此情況,為了使光罩2的對位標記34一致於基板1的對位標記35,必須使光罩2的對位標記34的間距變化量在分別沿著圖中的橫方向及縱方向的複數位置成為可變。In this case, in order to make the alignment mark 34 of the reticle 2 coincide with the alignment mark 35 of the substrate 1, it is necessary to change the pitch of the alignment mark 34 of the reticle 2 in the lateral direction and the longitudinal direction, respectively. The plural position becomes variable.

本發明是可將藉由第一及第二變形機構來使作用於基板支持構件的各個側緣部的力f1,f2,f3,f4(或力矩)調整成能夠在沿著圖中的橫方向軸及縱方向軸之複數的位置分別形成所定的值,因此可在該等複數的位置個別控制 基板支持構件的彎曲量。According to the present invention, the forces f1, f2, f3, f4 (or moments) acting on the respective side edge portions of the substrate supporting member can be adjusted to be able to be in the lateral direction along the figure by the first and second deforming mechanisms. The positions of the complex axes of the axis and the longitudinal axis respectively form a predetermined value, and thus can be individually controlled at the positions of the plural The amount of bending of the substrate supporting member.

隨之,被支持於基板支持構件的基板1的彎曲量也會被同様地控制,因此光罩2仿照基板1而產生之光罩2的對位標記34的間距變化量,可在沿著圖中的橫方向及縱方向的複數位置分別形成相異的值。Accordingly, the amount of bending of the substrate 1 supported by the substrate supporting member is also controlled in the same manner. Therefore, the amount of change in the pitch of the alignment mark 34 of the mask 2 generated by the mask 2 in accordance with the substrate 1 can be illustrated along the figure. The complex positions in the horizontal direction and the vertical direction in the middle form different values.

因此,如圖6所示,藉由在複數的位置分別以所定的值來施加力f1、f2、f3、f4(或力矩),可使光罩2的對位標記34一致於基板1的對位標記35。Therefore, as shown in FIG. 6, by applying the forces f1, f2, f3, and f4 (or moments) at predetermined positions at a plurality of positions, the alignment mark 34 of the reticle 2 can be aligned with the pair of the substrate 1. Bit mark 35.

圖7及圖8是表示本發明之曝光裝置的別的實施形態。與圖1~圖3所示的實施形態相異的點是作為第一及第二變形機構的驅動裝置36會在基板支持構件11的各個側緣部施加力而非力矩。驅動裝置36是沿著基板支持構件11的各側緣部20、21來複數設置。驅動裝置36是被載置於基底構件14,驅動裝置36的作動桿37的前端是利用萬向接頭等來連接至基板支持構件11的側緣部20、21的下面。7 and 8 show another embodiment of the exposure apparatus of the present invention. The point different from the embodiment shown in FIGS. 1 to 3 is that the driving device 36 as the first and second deforming mechanisms applies a force rather than a moment to each side edge portion of the substrate supporting member 11. The drive unit 36 is provided in plural along each of the side edge portions 20 and 21 of the substrate supporting member 11. The driving device 36 is placed on the base member 14, and the front end of the actuating lever 37 of the driving device 36 is connected to the lower surface of the side edge portions 20, 21 of the substrate supporting member 11 by a universal joint or the like.

各個的驅動裝置36可個別地作動,可對沿著基板支持構件11的側緣部20,21之複數位置賦予拉伸力及推壓力。因此,在圖7及圖8所示的曝光裝置中亦可進行圖5及圖6所說明那樣的對位。Each of the driving devices 36 can be individually actuated, and a tensile force and a pressing force can be applied to a plurality of positions along the side edge portions 20, 21 of the substrate supporting member 11. Therefore, the alignment shown in FIGS. 5 and 6 can be performed in the exposure apparatus shown in FIGS. 7 and 8.

圖10是表示用以使基板1在上述基板支持構件11的主面上不會有產生相對性的偏移之下固定支持的固定支持機構的具體構成。固定支持機構是包含形成於基板支持構件11的上面,亦即固定支持基板1的面之複數的溝38, 39,40。亦可取代溝,設置峰部(未圖示)。該等的溝38,39,40或峰部是實現在基板支持構件11上把持基板1的任務。Fig. 10 is a view showing a specific configuration of a fixing support mechanism for fixing the substrate 1 on the main surface of the substrate supporting member 11 without causing a relative offset. The fixing support mechanism includes a plurality of grooves 38 formed on the upper surface of the substrate supporting member 11, that is, the surface of the support substrate 1. 39,40. It is also possible to replace the groove and set a peak (not shown). The grooves 38, 39, 40 or peaks are the tasks for holding the substrate 1 on the substrate supporting member 11.

固定支持機構且可為包含:該等的溝38,39,40、及設於該等的溝38,39,40的底部,連接至負壓源的至少一個真空吸引孔38a,39a、40a之構成。各個的真空吸引孔38a,39a、40a是被連接至負壓源。圖10B是表示溝38內的真空吸引孔38a被連接至負壓源41的構造。基板1是藉由來自負壓源的負壓,吸附固定於基板支持構件11上。The fixed support mechanism may include: the grooves 38, 39, 40, and the bottoms of the grooves 38, 39, 40 provided at the bottom, connected to at least one vacuum suction hole 38a, 39a, 40a of the negative pressure source. Composition. The respective vacuum suction holes 38a, 39a, 40a are connected to a source of negative pressure. FIG. 10B shows a configuration in which the vacuum suction hole 38a in the groove 38 is connected to the negative pressure source 41. The substrate 1 is adsorbed and fixed to the substrate supporting member 11 by a negative pressure from a negative pressure source.

如圖10A所示,溝38,39,40可形成各個彼此隔離。此情況,亦可按各溝設置各別的負壓源。或,亦可將圖10A所示之2個的溝38設為第一群的溝,將2個的溝39設為第二群的溝,將1個的溝40設為第三群的溝,按各個的群來設置各別的負壓源。無論哪個情況,皆是即使在一部份的區域中產生空氣洩漏,照樣能夠使可將基板1充分固定支持於基板支持構件11上之類的負壓力作用於基板1。As shown in Figure 10A, the grooves 38, 39, 40 can be formed to be isolated from each other. In this case, each negative pressure source can also be set for each groove. Alternatively, the two grooves 38 shown in FIG. 10A may be the grooves of the first group, the two grooves 39 may be the grooves of the second group, and the one groove 40 may be the groove of the third group. Set each negative pressure source according to each group. In either case, even if air leakage occurs in a part of the area, the negative pressure such that the substrate 1 can be sufficiently fixed and supported on the substrate supporting member 11 can be applied to the substrate 1.

以能夠包圍溝38,39,40的方式,將溝42形成於基板支持構件11。溝42是設於配合基板1的外周之位置。如圖10C所示,基板1的外周緣是位於溝42內,因此該外周緣與溝42的機械性的「掛住」是形成保持基板1的助力。因此,此溝42亦可包含於固定支持機構。又,藉由溝42的存在,當基板1與光罩2緊貼時,基板1的外 周緣可躲至溝42內,因此可防止基板1的外周緣傷了或打破光罩2。The groove 42 is formed in the substrate supporting member 11 so as to surround the grooves 38, 39, and 40. The groove 42 is provided at a position on the outer circumference of the mating substrate 1. As shown in FIG. 10C, since the outer peripheral edge of the substrate 1 is located in the groove 42, the mechanical "hing" of the outer peripheral edge and the groove 42 is an aid for forming the holding substrate 1. Therefore, the groove 42 can also be included in the fixed support mechanism. Moreover, by the presence of the groove 42, when the substrate 1 is in close contact with the reticle 2, the outside of the substrate 1 The periphery can be hidden in the groove 42, so that the outer periphery of the substrate 1 can be prevented from being damaged or broken.

在圖10C中,雖顯示剖面為四角形狀的溝,但如圖10D所示,溝38,39,40,42亦可剖面為V字形。In Fig. 10C, although a groove having a quadrangular cross section is shown, as shown in Fig. 10D, the grooves 38, 39, 40, 42 may have a V-shaped cross section.

另外,就圖1~圖3所示的曝光裝置的變形例而言,將第一變形機構24及第二變形機構25配置於桿22,23的內側,藉由對桿22,23的下端賦予拉伸力,來對基板支持構件11的側緣部20,21賦予力矩之曝光裝置,亦為本發明的範圍內者。Further, in the modification of the exposure apparatus shown in FIGS. 1 to 3, the first deformation mechanism 24 and the second deformation mechanism 25 are disposed inside the rods 22, 23, and the lower ends of the rods 22, 23 are given. It is also within the scope of the invention to expose the stretching force to the side edge portions 20, 21 of the substrate supporting member 11.

就圖1~圖3所示的曝光裝置的另外其他的變形例而言,可對桿22,23的下端賦予推壓力及拉伸力雙方,對基板支持構件11的側緣部20,21選擇性地賦予正及負的力矩之曝光裝置,亦為本發明的範圍內者。In still another modification of the exposure apparatus shown in FIGS. 1 to 3, both the pressing force and the tensile force can be applied to the lower ends of the rods 22, 23, and the side edge portions 20, 21 of the substrate supporting member 11 can be selected. Exposure devices that impart positive and negative moments are also within the scope of the invention.

1‧‧‧基板1‧‧‧Substrate

1a‧‧‧曝光面1a‧‧‧Exposure

2‧‧‧光罩2‧‧‧Photomask

2A‧‧‧主面2A‧‧‧Main face

2B、2C、2D‧‧‧中心線2B, 2C, 2D‧‧‧ center line

3‧‧‧CCD攝影機3‧‧‧CCD camera

4‧‧‧基板支持構件4‧‧‧Substrate support member

5‧‧‧基底構件5‧‧‧Base member

6‧‧‧致動器6‧‧‧Actuator

7‧‧‧連結構件7‧‧‧Connected components

8‧‧‧光8‧‧‧Light

9‧‧‧密封構件9‧‧‧ Sealing members

10‧‧‧真空吸引孔10‧‧‧Vacuum suction hole

11‧‧‧基板支持構件11‧‧‧Substrate support member

12‧‧‧光罩支持構件12‧‧‧Photomask support member

13‧‧‧支柱13‧‧‧ pillar

14‧‧‧基底構件14‧‧‧Base member

15‧‧‧框架15‧‧‧Frame

16‧‧‧壓板彈簧16‧‧‧ plate spring

17‧‧‧間隔件17‧‧‧ spacers

18‧‧‧線圈彈簧18‧‧‧ coil spring

19‧‧‧位置規制銷19‧‧‧Location regulation

20‧‧‧側緣部20‧‧‧lateral edge

21‧‧‧側21‧‧‧ side

22‧‧‧桿22‧‧‧ pole

23‧‧‧桿23‧‧‧ rod

24‧‧‧第一變形機構24‧‧‧First deformation agency

25‧‧‧第二變形機構25‧‧‧Second deformation agency

26‧‧‧致動器26‧‧‧Actuator

27‧‧‧力傳達棒27‧‧‧Power communication stick

28‧‧‧力傳達滾輪28‧‧‧Power transmission wheel

29‧‧‧致動器29‧‧‧Actuator

30‧‧‧力傳達棒30‧‧‧Power communication stick

31‧‧‧力傳達滾輪31‧‧‧Power transmission wheel

32‧‧‧第一軸32‧‧‧First axis

33‧‧‧第二軸33‧‧‧second axis

34,35‧‧‧標記34,35‧‧‧ mark

34a~34d‧‧‧對位標記34a~34d‧‧‧ alignment mark

34a’~34d’‧‧‧對位標記34a’~34d’‧‧‧ alignment mark

36‧‧‧驅動裝置36‧‧‧ drive

37‧‧‧作動桿37‧‧‧Action rod

38,39,40、42‧‧‧溝38, 39, 40, 42‧ ‧ ditch

38a,39a、40a‧‧‧真空吸引孔38a, 39a, 40a‧‧‧ vacuum suction holes

f1,f2,f3,f4‧‧‧力F1, f2, f3, f4‧‧‧ force

圖1是表示本發明之一實施形態的曝光裝置的概略側剖面圖,基板與基板支持構件一起變形前的狀態。1 is a schematic side cross-sectional view showing an exposure apparatus according to an embodiment of the present invention, in a state before a substrate is deformed together with a substrate supporting member.

圖2是表示本發明之一實施形態的曝光裝置的概略側剖面圖,基板與基板支持構件一起變形後的狀態。2 is a schematic side cross-sectional view showing an exposure apparatus according to an embodiment of the present invention, in a state in which the substrate is deformed together with the substrate supporting member.

圖3是表示本發明之一實施形態的曝光裝置的概略橫剖面圖,相當於圖1的A-A向視圖。Fig. 3 is a schematic cross-sectional view showing an exposure apparatus according to an embodiment of the present invention, and corresponds to the A-A arrow view of Fig. 1 .

圖4是說明以往方法中,基板與光罩彎曲時之設於雙方的對位標記的位置關係圖。4 is a view showing a positional relationship between the alignment marks provided on both the substrate and the mask when the conventional method is bent.

圖5是說明本發明的方法之一形態中,基板與光罩彎 曲時之設於雙方的對位標記的位置關係圖。Figure 5 is a view showing the form of the method of the present invention, the substrate and the mask bend The positional relationship diagram of the alignment mark set on both sides of the song.

圖6是說明本發明的方法的別的形態中,基板與光罩彎曲時之設於雙方的對位標記的位置關係圖。Fig. 6 is a view showing the positional relationship between the substrate and the alignment mark provided when the substrate and the mask are bent in another embodiment of the method of the present invention.

圖7是表示本發明的別的實施形態之曝光裝置的概略縱剖面圖,基板與基板支持構件一起變形前的狀態。Fig. 7 is a schematic longitudinal cross-sectional view showing an exposure apparatus according to another embodiment of the present invention, in a state before the substrate is deformed together with the substrate supporting member.

圖8是表示本發明的別的實施形態之曝光裝置的概略橫剖面圖,相當於圖7的B-B向視圖。Fig. 8 is a schematic cross-sectional view showing an exposure apparatus according to another embodiment of the present invention, and corresponds to the arrow B-B of Fig. 7.

圖9是用以說明本發明的曝光方法的原理模式圖。Fig. 9 is a schematic view showing the principle of exposure of the present invention.

圖10是表示基板支持構件的固定支持機構圖,A是平面圖,B是以通過一個溝的面來切斷的剖面圖,C是表示固定支持機構的溝的剖面形狀,D是表示溝的別的剖面形狀。Fig. 10 is a view showing a fixing support mechanism of the substrate supporting member, A is a plan view, B is a cross-sectional view cut by a groove surface, C is a cross-sectional shape showing a groove of the fixing support mechanism, and D is a groove indicating The shape of the section.

圖11是省略了光罩及光罩支持構件的狀態下之以往的曝光裝置的概略平面圖。FIG. 11 is a schematic plan view of a conventional exposure apparatus in a state in which a photomask and a mask supporting member are omitted.

圖12是表示以往的曝光裝置的概略側剖面圖,基板變形前的狀態。FIG. 12 is a schematic side cross-sectional view showing a conventional exposure apparatus, and a state before the substrate is deformed.

圖13是表示以往的曝光裝置的概略側剖面圖,基板變形後的狀態。FIG. 13 is a schematic side cross-sectional view showing a conventional exposure apparatus, and a state after the substrate is deformed.

圖14是表示以往的曝光裝置的概略側剖面圖,使光罩變形而進行曝光作業的狀態。FIG. 14 is a schematic side cross-sectional view showing a conventional exposure apparatus, in which a mask is deformed to perform an exposure operation.

圖15是用以說明使基板及光罩彎曲來進行的曝光方法的原理模式圖。Fig. 15 is a schematic view showing a principle of exposure by bending a substrate and a mask.

1‧‧‧基板1‧‧‧Substrate

2‧‧‧光罩2‧‧‧Photomask

11‧‧‧基板支持構件11‧‧‧Substrate support member

13‧‧‧支柱13‧‧‧ pillar

14‧‧‧基底構件14‧‧‧Base member

22‧‧‧桿22‧‧‧ pole

26‧‧‧致動器26‧‧‧Actuator

38‧‧‧溝38‧‧‧ditch

38a‧‧‧真空吸引孔38a‧‧‧Vacuum suction hole

Claims (18)

一種曝光方法,係將描繪有圖案的光罩配置於覆蓋表面形成感光層的基板的感光層之位置,使上述光罩與上述基板彼此均一地接觸後,通過上述光罩來對上述基板的感光層照射光,藉此將上述圖案複製於上述基板之曝光方法,其特徵為:準備:全體為四角形狀,具有互相對向的第一對的側緣部及互相對向的第二對的側緣部之板狀的基板支持構件,在上述光罩之描繪有上述圖案的表面上使上述感光層呈對向,使上述基板在上述基板支持構件的主面上不會有產生相對性的偏移之下固定支持,一邊個別地控制:以延伸於和上述第一對的側緣部同方向的第一軸為中心之上述基板支持構件的彎曲量、及以延伸於和上述第二對的側緣部同方向的第二軸為中心之上述基板支持構件的彎曲量,一邊使上述基板支持構件彎曲,藉此使上述基板支持構件和上述基板一起變形成所望的彎曲形狀,在上述光罩與上述基板彼此均一地接觸,且上述基板支持構件及上述基板變形成上述所望的彎曲形狀之狀態下,通過上述光罩來對上述感光層照射光,藉此來使上述圖案的尺寸實質地變化,而複製於上述基板。 An exposure method is characterized in that a mask having a pattern is disposed at a position of a photosensitive layer covering a substrate on which a photosensitive layer is formed, and the reticle and the substrate are uniformly contacted with each other, and then the sensitization of the substrate is performed by the reticle. An exposure method in which the layer is irradiated with light to replicate the pattern on the substrate, and is characterized in that: the whole is a square shape, and has a side edge portion of the first pair facing each other and a second pair side opposite to each other a plate-shaped substrate supporting member having an edge portion, wherein the photosensitive layer is opposed to a surface on which the pattern is drawn on the mask, so that the substrate does not have a relative orientation on a main surface of the substrate supporting member Fixedly supporting, while individually controlling: a bending amount of the substrate supporting member centered on a first axis extending in the same direction as a side edge portion of the first pair, and extending to and from the second pair a bending amount of the substrate supporting member centering on a second axis in the same direction of the side edge portion, and bending the substrate supporting member, thereby causing the substrate supporting member and the substrate together Forming a desired curved shape, wherein the photomask and the substrate are in uniform contact with each other, and the substrate supporting member and the substrate are deformed into the desired curved shape, and the photosensitive layer is irradiated with light by the photomask. The size of the above pattern is substantially changed to be replicated on the substrate. 如申請專利範圍第1項之曝光方法,其中,使上述基板支持構件以上述第一軸為中心或以上述第二軸為中心 來彎曲時,在分別沿著上述第一及第二軸的複數位置個別地控制上述基板支持構件的彎曲量。 The exposure method of claim 1, wherein the substrate supporting member is centered on the first axis or centered on the second axis When bending, the amount of bending of the substrate supporting member is individually controlled at a plurality of positions along the first and second axes, respectively. 如申請專利範圍第1或2項之曝光方法,其中,以上述第一軸為中心的上述基板支持構件的彎曲係藉由使力或力矩作用於上述第一對的側緣部來進行,以上述第二軸為中心的彎曲係藉由使力或力矩作用於上述第二對的側緣部來進行。 The exposure method of claim 1 or 2, wherein the bending of the substrate supporting member centered on the first axis is performed by applying a force or a moment to the side edges of the first pair, The bending centering on the second axis is performed by applying a force or a moment to the side edges of the second pair. 如申請專利範圍第1或2項之曝光方法,其中,在上述光罩與上述基板之彼此對應的位置分別設有複數的對位標記,藉由標記檢測手段來檢測出該對位標記,根據檢測出的資料來運算上述光罩的上述對位標記與上述基板的上述對位標記之間的間距的偏移量,按照該運算結果來控制上述基板支持構件的彎曲量。 The exposure method of claim 1 or 2, wherein a plurality of alignment marks are respectively disposed at positions corresponding to the masks and the substrates, and the alignment marks are detected by the mark detecting means, according to The detected data is used to calculate a shift amount of the pitch between the alignment mark of the photomask and the alignment mark of the substrate, and the amount of warpage of the substrate supporting member is controlled in accordance with the calculation result. 如申請專利範圍第4項之曝光方法,其中,上述標記檢測手段為CCD攝影機。 The exposure method of claim 4, wherein the mark detecting means is a CCD camera. 如申請專利範圍第1或2項之曝光方法,其中,在上述光罩上稍大地作成上述圖案,曝光時,使上述基板支持構件與上述基板一起對上述光罩彎曲成凸狀,藉此使上述基板之形成有上述感光層的面的尺寸實質地擴大而形成所定的大小,且使上述光罩仿照上述基板,藉此使上述圖案的尺寸實質地縮小而形成所定的大小,然後,將上述圖案複製於上述基板。 The exposure method according to claim 1 or 2, wherein the pattern is slightly formed on the mask, and the substrate supporting member and the substrate are bent together in a convex shape during exposure. The size of the surface of the substrate on which the photosensitive layer is formed is substantially enlarged to form a predetermined size, and the mask is patterned in accordance with the substrate, whereby the size of the pattern is substantially reduced to form a predetermined size, and then the above-mentioned pattern is formed. The pattern is reproduced on the above substrate. 一種曝光裝置,係使用於:使描繪有圖案的光罩與形成有感光層的基板彼此均一地接觸後,通過上述光罩來 對上述基板的感光層照射光,藉此將上述圖案複製於上述基板之曝光方法的曝光裝置,其特徵係具備:基板支持構件,其係用以在和形成有上述感光層的面相反側的上述基板的面全體固定支持上述基板之基板支持構件,具有:互相對向的第一對的側緣部、及互相對向的第二對的側緣部、及用以在不使上述基板產生相對性的偏移之下固定支持的固定支持機構;光罩支持構件,其係以描繪有上述圖案的上述光罩的表面能夠對向於上述感光層之方式用以支持上述光罩;驅動機構,其係以上述光罩能夠對上述基板均一地接觸仿照之方式用以使上述基板支持構件與上述光罩支持構件彼此相對移動;複數的第一作用點,其係沿著上述基板支持構件的上述第一對的側緣部而設置;第一變形機構,其係使力或力矩對上述複數的第一作用點作用,藉此使上述基板支持構件與上述基板一起以延伸於和上述第一對的側緣部同方向的第一軸為中心彎曲;複數的第二作用點,其係沿著上述基板支持構件的上述第二對的側緣部而設置;第二變形機構,其係使力或力矩對上述複數的第二作用點作用,藉此使上述基板支持構件與上述基板一起以延伸於和上述第二對的側緣部同方向的第二軸為中心彎曲;引導機構,其係於上述驅動機構的作動時用以引導上述基板支持構件與上述光罩支持構件的相對移動;及 光照射裝置,其係用以通過上述光罩來對上述基板的上述感光層照射光。 An exposure apparatus for: uniformly contacting a mask on which a pattern is drawn and a substrate on which a photosensitive layer is formed, and then passing through the mask An exposure apparatus for exposing the photosensitive layer of the substrate to light, thereby replicating the pattern on the substrate, and characterized in that the substrate supporting member is provided on a side opposite to a surface on which the photosensitive layer is formed. The substrate support member for supporting the substrate is entirely fixed to the substrate, and has a first pair of side edge portions facing each other and a second pair of side edge portions facing each other, and for preventing the substrate from being generated a fixed support mechanism fixedly supported by a relative offset; a reticle supporting member for supporting the reticle in such a manner that a surface of the reticle having the above-mentioned pattern can be opposite to the photosensitive layer; The substrate holder supporting member and the reticle supporting member are relatively moved relative to each other by the reticle capable of uniformly contacting the substrate; the plurality of first acting points are along the substrate supporting member Providing a side edge portion of the first pair; the first deformation mechanism is configured to cause a force or a moment to act on the first plurality of points of action, thereby supporting the substrate And the substrate is bent along a first axis extending in the same direction as the side edge portion of the first pair; the second plurality of points of action are along the side edges of the second pair of the substrate supporting member Providing a second deformation mechanism that applies a force or a moment to the second plurality of points of action, whereby the substrate supporting member and the substrate extend in the same direction as the side edges of the second pair The second axis is center-curved; and a guiding mechanism is configured to guide relative movement of the substrate supporting member and the reticle supporting member when the driving mechanism is actuated; and A light irradiation device for irradiating light to the photosensitive layer of the substrate by the photomask. 如申請專利範圍第7項之曝光裝置,其中,上述第一變形機構可將分別使作用於上述複數的第一作用點的力或力矩的大小控制成所定的量,上述第二變形機構可將分別使作用於上述複數的第二作用點的力或力矩的大小控制成所定的量。 The exposure apparatus of claim 7, wherein the first deformation mechanism can control a magnitude of a force or a moment acting on the plurality of first action points to a predetermined amount, and the second deformation mechanism can The magnitude of the force or moment acting on the second point of action of the plural is controlled to a predetermined amount, respectively. 如申請專利範圍第7或8項之曝光裝置,其中,上述第一變形機構或上述第二變形機構具備馬達。 The exposure apparatus of claim 7 or 8, wherein the first deformation mechanism or the second deformation mechanism includes a motor. 如申請專利範圍第7或8項之曝光裝置,其中,上述第一變形機構或上述第二變形機構具有空氣壓力驅動的機構。 The exposure apparatus of claim 7 or 8, wherein the first deformation mechanism or the second deformation mechanism has a mechanism driven by air pressure. 如申請專利範圍第7或8項之曝光裝置,其中,具有:標記檢測手段,其係用以檢測出分別設置於上述光罩與上述基板之彼此對應的位置之複數的對位標記;運算手段,其係用以根據藉由上述標記檢測手段所檢測出的資料來運算上述光罩的上述對位標記與上述基板的上述對位標記之間的間距的偏移量,上述第一變形機構及上述第二變形機構的至少一方,係按照上述運算手段的運算結果來調整使作用於上述第一作用點及上述第二作用點的至少一方之力或力矩的大小,而使能夠控制上述基板支持構件的彎曲量。 The exposure apparatus of claim 7 or 8, further comprising: a mark detecting means for detecting a plurality of alignment marks respectively disposed at positions corresponding to the masks and the substrates; And a method for calculating a shift amount of a pitch between the alignment mark of the photomask and the alignment mark of the substrate based on data detected by the mark detecting means, the first deformation mechanism and At least one of the second deformation means adjusts a force or a moment acting on at least one of the first action point and the second action point in accordance with a calculation result of the calculation means, thereby enabling control of the substrate support The amount of bending of the member. 如申請專利範圍第7或8項之曝光裝置,其中, 上述光罩支持構件係具有容許上述光罩對上述基板往接近及背離的方向移動所定量之構造。 Such as the exposure apparatus of claim 7 or 8, wherein The reticle support member has a structure that allows the reticle to move in a direction in which the reticle is moved toward and away from the substrate. 如申請專利範圍第7或8項之曝光裝置,其中,上述光罩支持構件係具有用以規制上述光罩的上述光罩支持構件的支持面內的位置之位置規制機構。 The exposure apparatus of claim 7 or 8, wherein the reticle support member has a position regulating mechanism for regulating a position in a support surface of the reticle support member of the reticle. 如申請專利範圍第7或8項之曝光裝置,其中,上述固定支持機構係包含:形成於上述基板支持構件之固定支持上述基板的面之複數的溝或峰部。 The exposure apparatus according to claim 7 or 8, wherein the fixing support mechanism includes a plurality of grooves or peaks formed on a surface of the substrate supporting member that is fixed to support the substrate. 如申請專利範圍第7或8項之曝光裝置,其中,上述固定支持機構係包含:形成於上述基板支持構件之固定支持上述基板的面之複數的溝、及設於上述溝的底部,連接至負壓源的至少一個的真空吸引孔。 The exposure apparatus according to claim 7 or 8, wherein the fixing support mechanism includes: a plurality of grooves formed on a surface of the substrate supporting member fixedly supporting the substrate; and a bottom portion provided on the bottom of the groove, connected to At least one vacuum suction hole of the negative pressure source. 如申請專利範圍第15項之曝光裝置,其中,設於上述複數的溝的底部之上述至少一個的真空吸引孔,係被連接至每個溝或每個包含複數的溝的群之負壓源。 The exposure apparatus of claim 15, wherein the at least one vacuum suction hole provided at the bottom of the plurality of grooves is connected to each of the grooves or a group of negative pressure sources each including a plurality of grooves . 如申請專利範圍第7或8項之曝光裝置,其中,上述基板支持構件的厚度為5mm以上。 The exposure apparatus of claim 7 or 8, wherein the substrate supporting member has a thickness of 5 mm or more. 如申請專利範圍第7或8項之曝光裝置,其中,上述第一變形機構及上述第二變形機構係被載置於用以支持上述基板支持構件的基底構件。 The exposure apparatus of claim 7 or 8, wherein the first deformation mechanism and the second deformation mechanism are placed on a base member for supporting the substrate supporting member.
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