JP2010080714A - Stamping device, and method of manufacturing article - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve overlay accuracy in a stamping device. <P>SOLUTION: The stamping device includes a mold stage, containing a mold chuck, and an X-Y stage containing a substrate chuck, and hardens a liquid resin under a condition where a mold held to the mold chuck is pressed to the liquid resin arranged on a substrate held to the substrate chuck in a Z-axis direction, to form a resin pattern on the substrate. The mold chuck includes a base, a plurality of holding parts holding a plurality of peripheries of the mold, and a plurality of first drive mechanisms positioning the plurality of holding parts, respectively, to the base in the Z-axis direction. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a stamping apparatus having a mold stage including a mold chuck and an XY stage including a substrate chuck. In particular, the present invention relates to a stamping apparatus that forms a resin pattern on a substrate by curing the liquid resin in a state where a mold held on the mold chuck is pressed against the liquid resin arranged on the substrate held on the substrate chuck in the Z-axis direction.

  Nanoimprinting is already known as a technique that can replace a method for forming a fine pattern such as a semiconductor device using photolithography using ultraviolet rays, X-rays, or an electron beam, or MEMS (Micro Electro-Mechanical Systems). In nanoimprinting, a pattern (also referred to as a template or an original plate) in which a fine pattern is formed by electron beam exposure or the like is pressed (imprinted) onto a substrate such as a wafer coated with a resin material, thereby transferring the pattern onto the resin. Technology.

  There are several types of nanoimprints, and a photocuring method has been proposed as one of the methods (Patent Document 1). The photocuring method is a method in which the mold is peeled off (released) after being exposed to light and cured in a state where it is pressed against an ultraviolet curable resin with a transparent mold. Nanoimprinting by this photocuring method can be said to be suitable for the manufacture of semiconductor integrated circuits from the point that temperature control is relatively easy and the alignment mark on the substrate can be observed through a transparent mold.

  In addition, considering the overlap of different patterns, there is a method that batch-transfers the entire surface of the substrate, but a step-and-repeat method that manufactures a mold that matches the size of the chip of the device to be manufactured and sequentially transfers it to shots on the substrate. Is preferable.

  In order to apply to the manufacture of a semiconductor integrated circuit, it is necessary to cope with a change (magnification) of the wafer due to various processes. The wafer is patterned using various metals, and the metal structure can be different depending on the vertical direction and the horizontal direction (X direction and Y direction). For this reason, the entire wafer is enlarged or reduced through a heating process such as film formation or sputtering, and as a result, a phenomenon in which the size differs between the X direction and the Y direction occurs. In an actual semiconductor process, a magnification change of the entire wafer of about ± 10 ppm occurs, and a magnification difference of about 10 ppm occurs between the X direction and the Y direction. Since the entire wafer is enlarged or reduced, the magnification (size) of each chip varies accordingly.

  In conventional lithography, an exposure apparatus (so-called stepper or scanner) responds by changing the size of each shot (for example, 25 mm * 33 mm). In the case of a scanner (scanning exposure apparatus), the reduction magnification of the projection optical system is changed from the nominal value (for example, 1/4) to about several ppm in accordance with the magnification of the wafer, and the scanning speed is set in accordance with the magnification of the wafer. It can be changed by about ppm. In this way, even if a magnification difference (deviation) occurs between the X direction and the Y direction, high-precision overlaying is possible.

  The wafer magnification can be calculated by well-known global alignment measurement. In the global alignment measurement, the measurement mark interval can be set larger, for example, five times or more than the case of the die-by-die alignment measurement. Therefore, even if the positioning accuracy of the wafer stage is subtracted, the global alignment method can perform measurement with higher accuracy than the die-by-die alignment method, and most current exposure apparatuses employ global alignment measurement.

  On the other hand, unlike the above-described exposure apparatus, the nanoimprint apparatus (imprinting apparatus) does not have a projection optical system, and exposure of a wafer to be scanned with light patterned (modulated) by a mask (reticle) to be scanned. (Scanning exposure) is not performed. Therefore, it is necessary to introduce another technique for magnification correction.

  In this connection, the present applicant has proposed a technique for changing the mask size in the technical field of proximity X-ray lithography (Patent Documents 1 and 2). Proximity X-ray exposure apparatuses perform exposure using X-rays having a wavelength of 1 nm or less by arranging a mask and a wafer in proximity to each other at intervals of several microns (Proximity). Similar to the stamping device, there is no projection optical system and scanning exposure is not performed. For this reason, by applying a force to the side surface of the holder that indicates the mask, the mask is deformed in the order of ppm to perform magnification correction. Deformation correction (correction of different magnifications in the X direction and the Y direction) is also possible by deforming with different forces in the X direction and the Y direction.

When applying force from the side of the holder, it can only be reduced. Therefore, the mask is manufactured by drawing a mask pattern larger than a design value of about 10 ppm by an electron beam exposure apparatus or the like, for example. When the wafer magnification is 1, a force is applied to reduce the mask.
Japanese Patent Laid-Open No. 10-312956 JP 2003-7597 A JP 2004-214415 A JP-A-2005-274953

  In the stamping apparatus, similarly to the above-described proximity X-ray exposure apparatus, magnification correction can be performed by applying a force to the mold. However, there are problems as described below.

  In future lithography, for example, it is conceivable to apply a stamping apparatus to the manufacture of a semiconductor device of about 32 nm half pitch. In this case, the overlay accuracy is 5.7 nm in ITRS (INTERNATIONAL TECHNOLOGY ROAMAP FOR SEMICONDUCTORS). Therefore, the magnification adjustment must also be controlled with an accuracy of several nanometers or less.

  Also, the orientation of the mold differs between when it is manufactured (the pattern surface (Cr surface) is upward in the electron beam exposure apparatus) and when it is used (the pattern surface is downward in the stamping apparatus). For this reason, the accuracy and variation of the image placement (IP) on the mold can also be a problem.

  A technique for correcting a pattern drawn on an original plate in consideration of such changes in the posture and shape of the original plate is known (Patent Documents 3 and 4).

  However, in order to achieve the overlay accuracy as described above with the stamping device, further technical development is required.

An imprinting apparatus according to one aspect of the present invention made in consideration of the above-described problem has a mold stage including a mold chuck, and an XY stage including a substrate chuck, and a substrate held by the substrate chuck. A stamping device that forms a resin pattern on the substrate by curing the liquid resin in a state where the mold held by the mold chuck is pressed in the Z-axis direction against the disposed liquid resin;
The mold chuck is
The base,
A plurality of holding portions respectively holding a plurality of peripheral portions of the mold;
A plurality of first drive mechanisms that respectively position the plurality of holding portions with respect to the base in the Z-axis direction;
It is a stamping device characterized by having.

  Other aspects of the present invention are as described in “Claims”, “Best Mode for Carrying Out the Invention”, the attached drawings, and the like.

  The present invention is advantageous in improving the overlay accuracy in the stamping device.

  Hereinafter, a nanoimprint apparatus (an imprinting apparatus) using a photocuring method according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[Embodiment 1]
FIG. 1 is a configuration diagram of a nanoimprint apparatus according to Embodiment 1 of the present invention, and FIG. 2 is a control block diagram of the nanoimprint apparatus according to Embodiment 1 of the present invention. FIG. 6 is a cross-sectional view around the mold chuck showing the arrangement of alignment marks according to the first embodiment of the present invention.

  1, 2, and 6, 1 is a wafer as a substrate, and 2 is a wafer chuck (also referred to as a substrate chuck) for holding the wafer 1. Reference numeral 3 denotes a fine movement stage having a function of correcting the position of the wafer 1 in the θ (rotation about the z-axis) direction, a function of adjusting the z position of the wafer 1, and a tilt function for correcting the tilt of the wafer 1. It is arranged on the XY stage 4 for positioning at the position. Hereinafter, the fine movement stage 3 and the XY stage 4 are collectively referred to as a substrate stage, a wafer stage, or an XY stage.

  Reference numeral 5 denotes a base surface plate on which the XY stage 4 is placed. Reference numeral 6 denotes a laser interferometer 7 which is mounted on the fine movement stage 3 and measures the positions of the fine movement stage 3 in the x and y directions (y direction is not shown). It is the reference mirror which reflects the light from. Reference numerals 8 and 8 ′ are pillars that stand on the base surface plate 5 and support the top plate 9.

  Reference numeral 10 denotes a mold having an uneven pattern P2 to be transferred to the wafer 1 formed on the surface thereof. The mold 10 is fixed to the mold chuck 11 by a mechanical holding means (not shown). The mold chuck 11 is placed on the mold stage 12 by mechanical holding means (not shown). Reference numeral 11 </ b> P denotes a plurality of positioning pins that regulate the position of the mold 10 on the mold chuck 11 when the mold 10 is installed on the mold chuck 11.

  The mold stage 12 has a function of correcting the position of the mold 10 (mold chuck 11) in the θ (rotation around the z axis) direction and a tilt function for correcting the tilt of the mold 10. Further, in order to measure the positions in the x and y directions, a reflecting surface that reflects light from the laser interferometer 7 'is provided (y direction is not shown). The mold chuck 11 and the mold stage 12 have openings 11H and 12H that allow UV light irradiated from the UV light source 16 through the collimator lens 17 to pass through the mold 10, respectively.

  Reference numeral 13 denotes a guide bar plate having one end fixed to the mold stage 12 and the other end of the guide bars 14 and 14 ′ penetrating the top plate 9. Reference numerals 15 and 15 ′ denote mold lifting / lowering linear actuators including air cylinders or linear motors, which drive the guide bars 14 and 14 ′ in the Z-axis direction of FIG. 1 and press the mold 10 held by the mold chuck 11 against the wafer 1. Or pull apart.

  Reference numeral 18 denotes an alignment shelf suspended from the top plate 9 by support columns 19 and 19 ', through which guide bars 14 and 14' pass. A gap sensor 20 such as a capacitance sensor measures the height (flatness) of the wafer 1 on the wafer chuck 2. A plurality of load cells 21 (not shown in FIG. 1) attached to the mold chuck 11 or the mold stage 12 measure the pressing force of the mold 10.

  Reference numerals 30 and 30 'denote TTM (through-the-mold) alignment scopes for alignment measurement. The scope includes an optical system, an imaging system, or a light receiving element for measuring a positional deviation between an alignment mark (also referred to as a substrate mark) formed on the wafer 1 and an alignment mark (also referred to as a mold mark) provided on the mold 10. Have A positional shift in the x and y directions between the wafer 1 and the mold 10 is measured by the TTM alignment scopes 30 and 30 '.

  Reference numeral 32 denotes a dispenser head (resin discharging means) provided with a resin dropping nozzle for dropping a liquid resin (liquid resin) onto the surface of the wafer 1. The liquid resin is preferably a photo-curing resin.

  Reference numeral 50 denotes a reference mark on a reference mark table arranged on the fine movement stage 3 (on the XY stage).

  Reference numeral 100 denotes a CPU (central control unit) that controls the above actuators and sensors to cause the apparatus to perform a predetermined operation.

  Here, the operation of the nanoimprint apparatus when creating a semiconductor device will be described with reference to FIGS. 1 and 3 to 7. FIG. 3 is a flowchart for transferring a pattern of a layer using the same mold on a plurality of wafers.

  In FIG. 3, in step S1, the mold 10 is supplied to the mold chuck 11 by a mold conveying means (not shown).

  In step S2, the TTM alignment scopes 30 and 31 measure the positional deviation between them by simultaneously observing the alignment marks M1 and M2 of the mold 10 shown in FIG. 6 and the reference mark 50 on the fine movement stage 3, for example. To do.

  Then, using this measurement result, the mold stage 12 adjusts the position of the mold 10 mainly in the θ (rotation around the z axis) direction.

  Next, in step S3, the wafer 1 is supplied to the wafer chuck 2 by a wafer transfer means (not shown).

  In the subsequent step S4, the XY stage 4 is driven and the height (flatness) of the entire surface of the wafer 1 is measured by the gap sensor 20. As will be described later, this measurement data is used when aligning the transfer shot surface of the wafer 1 with a reference plane of an apparatus (not shown) at the time of mold stamping.

  Next, in step S5, a plurality of pre-alignment marks (not shown) previously transferred onto the wafer 1 are imaged by a pre-alignment measuring means (not shown). Then, displacements in the x and y directions with respect to the apparatus of the plurality of pre-alignment marks are measured by image processing, and position correction of the wafer 1 in the θ (rotation around the z axis) direction is performed based on the result.

  In the subsequent step S6, measurement using the TTM alignment scopes 30 and 30 'is performed. That is, in the sample measurement shot, the relative displacement (XY) between the alignment marks M1 and M2 (mold marks) on the mold 10 and the alignment marks W1 and W2 (substrate marks) on the wafer 1 in the x and y directions. (Position displacement in the plane) is measured. In FIG. 5, the specific shots 2, 9, 13, and 20 that are shaded are sample measurement shots.

  In FIG. 6, P <b> 1 is a pattern transferred in the preceding layer together with the alignment marks W <b> 1 and W <b> 2, and P <b> 2 is a transfer pattern of the mold 10.

  FIG. 7 shows an example of each alignment mark imaged by the TTM alignment scopes 30 and 30 ′ when the mold mark and the substrate mark are imaged simultaneously. In this case, only the positional deviation in the x direction can be measured, and the y direction is measured by using alignment marks similarly arranged in the y direction around the patterns P1 and P2. Further, a TTM alignment scope (not shown) for measuring the positional deviation in the y direction is arranged at a corresponding position.

  A positional deviation in the θ (rotation around the z-axis) direction is also calculated from the positional deviation in the x and y directions.

  Then, from the measurement result by the TTM alignment scope in the sample measurement shot in FIG. 5, the deviation in the x, y, and θ directions in each shot on the wafer 1 is calculated, and the wafer stage at the time of performing the transfer for each shot is calculated. A positioning target position is determined. The determination can be performed by a method of calculating a coefficient of an expression for approximating the measured shot coordinates by coordinate conversion of the design shot coordinates using a least square method or the like.

  This is the same as the global alignment measurement method used in the step & repeat type semiconductor projection exposure apparatus disclosed in Patent Document 2, for example.

  Next, in step S7, pattern transfer according to the flowchart shown in FIG. 4 is performed for each shot on the wafer 1.

  When the transfer of all shots is completed, the wafer 1 is recovered from the wafer chuck 2 by a wafer transfer means (not shown) in step S8.

  In subsequent step S9, it is determined whether or not there is a wafer to which pattern transfer is to be performed. If there is a wafer to be transferred, the process returns to step S3, and if there is no wafer to be transferred, the process proceeds to step S10.

  In step S10, the mold 10 is collected from the mold chuck 11 by a mold conveying means (not shown), and the pattern transfer to a plurality of wafers is completed.

  FIG. 4 is a flowchart at the time of pattern transfer of one wafer in the nanoimprint apparatus according to the first embodiment of the present invention, and corresponds to step S7 in FIG.

  Hereinafter, the operation and action of the nanoimprint apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 4, 1, and 2.

  In FIG. 4, first, in step S701, the XY stage 4 is driven, the wafer chuck 2 on which the wafer 1 is placed is moved, and a place (shot) for transferring the pattern on the wafer 1 is placed under the dispenser head 32. Bring.

  In subsequent step S702, the photocurable resin is dropped onto the target shot on the wafer 1 by the dispenser head 32.

  At this time, if the arrangement of the resin discharge nozzles of the dispenser head is linear, the resin is discharged while the XY stage 4 is driven according to the shot size.

  On the other hand, when the resin discharge nozzle is a matrix type that covers the entire shot surface, it is not necessary to drive the XY stage 4 and the resin can be discharged at one time.

  Next, in step S703, the XY stage 4 is driven so that the surface of the shot comes to a position facing the pattern P2 of the mold 10. At this time, the position of the wafer stage is determined by the result of the alignment measurement in step S6 in FIG. 3, and moves to the determined target position.

  Further, based on the above-described wafer height measurement data, the height and inclination of the wafer chuck 2 in the z direction are adjusted by the fine movement stage 3 so that the surface of the shot of the wafer 1 matches a reference plane (not shown) of the apparatus.

  In step S704, the linear actuators 15 and 15 'are driven to lower the mold chuck 11 to a predetermined position.

  Next, in step S705, it is determined whether or not the pressing force of the mold 10 is an appropriate value based on the outputs of a plurality of load cells 21 (not shown) attached to the mold chuck 11 or the mold stage 12. If the pressing force is not within the predetermined range, the determination in step S705 is no, and the process proceeds to step S706.

  In step S706, the pressing force of the mold 10 is adjusted by changing the position of the mold chuck 11 in the z direction by the linear actuators 15 and 15 'or by changing the position of the wafer chuck 2 in the z direction by the fine movement stage 3. . The loop of step S705 and step S706 is repeated until the target pressing force is reached. If it is determined in step S705 that the pressing force of the mold 10 is appropriate, step S705 is skipped and the process proceeds to step S707.

  In step S707, the UV light source 16 irradiates UV light for a predetermined time.

  When the irradiation of the UV light is completed, the linear actuators 15 and 15 ′ are driven to raise the mold chuck 11 in the subsequent step S 708, and the mold 10 is separated from the cured resin on the wafer 1.

  Next, in step S709, the XY stage 4 is driven, and the wafer 1 is moved so that the next shot comes under the dispenser head 32.

  In the subsequent step S710, it is determined whether or not the pattern transfer of all shots on the wafer 1 has been completed.

  If there is an untransferred shot, the determination in step S710 is skipped and the process returns to step S702.

  If there is no untransferred shot, the determination in step S710 is skipped and the process proceeds to step S711.

  In step S711, the XY stage 4 is driven to a predetermined position in preparation for the collection of the wafer 1 (step S8 in FIG. 3).

  As described above, the operation and action of pattern transfer to the wafer 1 have been described with reference to FIG. 4. However, it is also possible to perform pattern transfer by performing alignment by the die-by-die alignment method instead of the global alignment method. For example, a die-by-die alignment method is applied to a shot at the center of the wafer with good alignment accuracy. Then, a shot of the peripheral portion of the wafer that seems to have a large alignment error may be subjected to pattern transfer by alignment in the global alignment method based on the measurement result in the previous die-by-die alignment method.

  In this case, the die-by-by-alignment is performed before or after step S704 in FIG. 4 by measuring the amount of displacement by the method applied to the sample measurement shot described in step S6 in FIG. Thus, alignment in the x, y, and θ directions is performed.

  Hereinafter, the configuration of the mold chuck in the present embodiment will be described. The mold chuck of this embodiment has a mechanism (also referred to as a distortion correction mechanism) that corrects the shape (twist or the like) of the mold.

  In lithography using a nanoimprint apparatus, it is effective to be able to correct distortion of a pattern to be formed. When patterning is performed using an exposure apparatus having a projection optical system, the projected pattern image is distorted due to distortion (distortion aberration) of the projection optical system, and the pattern image and the pattern already formed on the wafer are superimposed. Accuracy can be degraded. In the nanoimprint apparatus, since there is no projection optical system, the distortion is not affected, but the transferred pattern is distorted due to the flatness (flatness) of the mold held by the mold chuck. Here, the expression “distortion” is also used for deformation (aberration) of the pattern formed on the mold, which distorts the transferred pattern.

  In addition, when distortion (distortion aberration) is present in the pattern already formed on the wafer, the overlay accuracy can be outside the allowable range even if patterning with the mold is performed without distortion. Therefore, it is preferable to correct the distortion of the mold so as to obtain the best overlay accuracy.

  For this reason, for example, depending on the required accuracy, it is necessary to perform overlay inspection by actually performing patterning, and to drive in the distortion of the mold so that the overlay accuracy is the best based on the result.

  Here, the measurement of the distortion of the mold can be performed as follows using the TTM alignment scopes 30 and 30 '. First, on the XY plane, the reference mark 50 on the wafer stage is moved to the position (nominal position) of each mark on the mold. Then, the positional deviation of each mark is measured using the TTM alignment scopes 30 and 30 '. A distortion aberration may be calculated based on the measurement result.

  Based on the distortion calculated as described above, for example, the shape of the mold is corrected so that the distortion is minimized (reduced) or according to the distortion of the pattern already formed on the wafer. If so, the overlay accuracy can be improved.

  Depending on the required accuracy, the flatness of the mold may be adjusted without measuring the positional deviation of the partial pattern (or mark) on the mold. In this case, the flatness of the mold (quartz substrate) may be measured using a shape measuring instrument (for example, a measuring instrument including a white interferometer) or the like, and the measured flatness may be used for adjustment.

  Further, the mechanism for adjusting the shape of the mold must be configured so as not to block the ultraviolet rays that cure the liquid resin.

  Furthermore, the mold chuck also requires a mechanism (magnification or magnification mechanism) that deforms the mold by applying a force independently in the X-axis direction and the Y-axis direction.

  On the other hand, it is also effective to change the magnification (size) of the entire wafer by changing the temperature of the wafer by the temperature adjustment mechanism based on the global alignment measurement result or the like or for each process. As described above, since the magnification changing mechanism (force applying mechanism) that applies force to the mold can only reduce the mold, it is also effective to combine a wafer temperature adjustment mechanism. For example, the wafer temperature can be raised by the temperature adjustment mechanism, and as a result, the force correction mechanism can apply force only to the direction of the X direction / Y direction that is greatly extended to perform the magnification correction / deviation correction.

  Further, for example, when the mold is not made large and the measured value of the wafer magnification is −1 ppm in the X-axis direction and −7 ppm in the Y-axis direction, the temperature of the wafer is changed by the temperature adjustment mechanism. The X axis direction is corrected to 0 ppm, and the Y axis direction is corrected to -6 ppm. Further, a force is applied to the mold only by the Y-axis direction by a force applying mechanism to reduce the wafer by 6 ppm in the Y-axis direction so that the Y-axis direction is also 0 ppm.

  Furthermore, when the control by the temperature adjusting mechanism cannot be performed with high accuracy, the magnification correction may be performed roughly by the temperature adjusting mechanism, and the magnification correction may be performed with high accuracy by the force applying mechanism.

  Next, a specific example of the configuration of the mold chuck will be described with reference to FIGS.

  FIG. 8 is a diagram showing a configuration of a mold chuck having a mold distortion correction mechanism. 8, (b) is a front view as seen from the Y-axis direction, (a) is a cross-sectional view of (b) cut along a plane perpendicular to the Z-axis direction, and (c) is a plane perpendicular to the X-axis direction. It is sectional drawing of (b) cut out. In FIG. 8, 1 is a mold, 2 is a chuck base (also referred to as a base), and 3 (3a, 3b, 3c, 3d) are mold clamp moving mechanisms. 4 is a mold clamp movable pin, and 5 is a mold clamp fixing pin. The mold clamp movable pin 4 and the mold clamp fixing pin 5 function as a plurality of holding portions that respectively hold a plurality of peripheral portions of the mold. The mold clamp movable pin 4 is movable in the Z-axis direction by a drive mechanism (not shown), and clamps the mold in cooperation with the mold clamp fixing pin 5. In the present embodiment, the plurality of peripheral portions are the four corner portions of the mold.

  The mold clamp moving mechanism 3 (3a, 3b, 3c, 3d) functions as a plurality of driving mechanisms (also referred to as first driving mechanisms) for positioning the plurality of holding portions with respect to the base in the Z-axis direction. The drive mechanism can include an actuator (not shown), a guide mechanism, and a position sensor. For example, a piezoelectric actuator (piezo element), a guide mechanism using elastic deformation (elastic hinge) that guides movement of the holding unit, and a capacitance sensor that detects a control amount (position of the holding unit) are included. CPU100 (control means) controls an actuator according to the output of a position sensor. With the configuration as illustrated, the first drive mechanism can move the holding portion with high straightness in the arrow direction (Z-axis direction) of FIG.

  The mold chuck including such a first driving mechanism adjusts the shape of the mold based on at least one of the above-described mold distortion, distortion of the pattern already formed on the wafer, and mold flatness. . That is, the movement amounts (target positions) of the plurality of holding units are calculated based on distortion and flatness information, and the plurality of first drive mechanisms are individually (independently) controlled based on the calculated movement amounts (target positions). Thereby, for example, the mold is deformed so as to be twisted, or the flatness thereof is improved, and as a result, the overlay accuracy can be improved.

  FIG. 9 is a diagram showing a configuration of a mold chuck having a mold magnification changing mechanism in addition to the above-described distortion correction mechanism. 9, (b) is a front view as seen from the Y-axis direction, (a) is a cross-sectional view of (b) cut along a plane perpendicular to the Z-axis direction, and (c) is a plane perpendicular to the X-axis direction. It is sectional drawing of (b) cut out. 9, the same reference numerals as those in FIG. 8 represent the same elements as those in FIG. 8, and the description thereof will be omitted. That is, the description of the distortion correction mechanism is omitted.

  In FIG. 9, 6 (6a, 6b) is a movable contact base, 7 (7a, 7b, 7c, 7d, 7e, 7f) is a movable contact, 8 (8a, 8b) is a fixed contact base, 9 (9a, 9b, 9c, 9d, 9e, 9f) are fixed contacts. The movable contact 7 and the fixed contact 9 constitute a plurality of contact portions that contact the side surface of the mold. The chuck base 2 supports the movable contact 7 via the movable contact base 6 and the fixed contact 9 via the fixed contact base 8. The movable contact base 6 is a drive mechanism (second drive) that positions at least some of the contact portions (movable contacts 7) with respect to the chuck base 2 (base portion) in a direction parallel to the XY plane. It also functions as a mechanism). There may be two second drive mechanisms corresponding to the X axis and Y axis, or only one second drive mechanism corresponding to either the X axis or the Y axis.

  The second drive mechanism can include an actuator (not shown), a guide mechanism, and a position sensor. For example, a piezoelectric actuator (piezo element), a guide mechanism using elastic deformation (elastic hinge) that guides the movement of the contact portion (movable contact 7), and a capacitance sensor that detects a control amount (position of the contact portion) Including. CPU100 (control means) controls an actuator according to the output of a position sensor. With the configuration as illustrated, the second drive mechanism can move the contact portion with high straightness in the direction of the arrow in FIG. 9C (at least one of the X-axis direction and the Y-axis direction).

  With such a mold chuck including the second drive mechanism, for example, the mold magnification (size) based on at least one of the magnification (size) of the mold and the magnification (size) of the pattern already formed on the wafer. ). That is, the movement amount (target position) of the contact portion (movable contact 7) is calculated based on the magnification (size) information, and at least one second drive mechanism is individually (independently) based on the calculated movement amount (target position). Control. Thereby, for example, the mold is deformed so as to be compressed or stretched, and as a result, the overlay accuracy can be improved.

  The stamp apparatus according to the embodiment described above is advantageous in terms of improving overlay accuracy.

[Embodiment of article manufacturing method]
A method of manufacturing a device (semiconductor integrated circuit element, liquid crystal display element, etc.) as an article includes a step of transferring (forming) a pattern onto a substrate (wafer, glass plate, film substrate, etc.) using the above-described stamping device. . Further, the method may include a step of etching the substrate to which the pattern has been transferred. When manufacturing other articles such as patterned media (recording media) and optical elements, other processing steps for processing the substrate to which the pattern has been transferred may be included instead of the etching step.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

  The present invention can be used to form a fine pattern for manufacturing an article such as a semiconductor or MEMS (Micro Electro-Mechanical Systems).

1 is a configuration diagram of a nanoimprint apparatus according to Embodiment 1. FIG. 3 is a control block diagram of the nanoimprint apparatus according to Embodiment 1. FIG. It is a figure which shows the flow which transfers to a several wafer sequentially regarding the same layer. It is a figure which shows the detailed flow which performs transcription | transfer to one wafer. It is a figure which shows arrangement | positioning of the sample shot of global alignment measurement. It is sectional drawing of a mold chuck periphery which shows arrangement | positioning of an alignment mark. It is a figure which illustrates the positional relationship of the alignment mark within a TTM alignment scope visual field. It is a figure which shows the structure of a mold chuck. It is a figure which shows the structure of a mold chuck.

Explanation of symbols

<FIGS. 1 to 7>
2 Wafer chuck 3 Fine movement stage 4 XY stage 11 Mold chuck 12 Mold stage <FIGS. 8 to 9>
2 Chuck base 3 Mold clamp moving mechanism 4 Mold clamp movable pin 5 Mold clamp fixing pin

Claims (6)

A mold stage including a mold chuck and an XY stage including a substrate chuck, and the mold held by the mold chuck is pressed in the Z-axis direction against a liquid resin disposed on the substrate held by the substrate chuck A stamping device for curing the liquid resin in a state of being formed to form a resin pattern on the substrate,
The mold chuck is
The base,
A plurality of holding portions respectively holding a plurality of peripheral portions of the mold;
A plurality of first drive mechanisms that respectively position the plurality of holding portions with respect to the base in the Z-axis direction;
A stamping device characterized by comprising: The plurality of peripheral portions are portions of four corners of the mold.
The stamping device according to claim 1.   The imprinting device according to claim 1, wherein the mold chuck has a magnification changing mechanism that changes a size of the mold in at least one of the X-axis direction and the Y-axis direction.   The zoom mechanism is configured to position a plurality of contact portions that contact a side surface of the mold and at least a part of the plurality of contact portions relative to the base portion in a direction parallel to an XY plane. The stamping device according to claim 3, further comprising:   5. The apparatus according to claim 1, further comprising a control unit that controls an operation of the driving mechanism based on information on a distortion of a pattern formed on the mold or a distortion of a pattern transferred by the mold. The stamping device described. Forming a resin pattern on the substrate using the stamping device according to claim 1;
Processing the substrate on which the pattern is formed in the step;
A method for producing an article comprising:

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