JPS6211231A - Bonding method for wafer and mask - Google Patents

Bonding method for wafer and mask

Info

Publication number
JPS6211231A
JPS6211231A JP60136828A JP13682885A JPS6211231A JP S6211231 A JPS6211231 A JP S6211231A JP 60136828 A JP60136828 A JP 60136828A JP 13682885 A JP13682885 A JP 13682885A JP S6211231 A JPS6211231 A JP S6211231A
Authority
JP
Japan
Prior art keywords
mask
wafer
space
central section
nitrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60136828A
Other languages
Japanese (ja)
Inventor
Kenji Aiko
健二 愛甲
Yoshiji Namiki
南木 美嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP60136828A priority Critical patent/JPS6211231A/en
Publication of JPS6211231A publication Critical patent/JPS6211231A/en
Pending legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To prevent the insertion of air between a wafer and a mask by a method wherein pressure in a space on the lower surface side of the mask is lowered, the mask is directed downward, and deflected to a projecting shape and the central section of the mask and the central section of the wafer are brought into contact first. CONSTITUTION:A space 11 closed between a stage 3' and a top surface plate 8 is formed. The space is evacuated while nitrogen gas is fed into the space 11 as shown in the arrow N2, and displacement is made larger than the quantity of nitrogen gas fed and the inside of the space 11 is decompressed. The quantity of decompression is brought to 50-400mmHg. A mask 2' is deflected downward to a projecting shape by the decompression of the space 11. Nitrogen gas is ejected as shown in the arrow n2 from a section in the vicinity of the center of a suction pad under the state, and the central section of a wafer 1 is blown up. Consequently, the wafer 1 is deflected upward to the projecting shape and blown up, and the central section of the wafer 1 and the central section of the mask 2' are brought into contact first. The whole surface of the wafer 1 is introduced to the state in which it is fast stuck uniformly to the whole surface of the mask 2'. Accordingly, the whole surface can be bonded completely.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、半導体ウェハの製造工程において、水平に支
承したマスクの下面に対してウェハを密着せしめる方法
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of bringing a wafer into close contact with the lower surface of a horizontally supported mask in a semiconductor wafer manufacturing process.

〔発明の背景〕[Background of the invention]

第2図は、ウェハ1をマスク2に密着させる方法の1例
の説明図である。
FIG. 2 is an explanatory diagram of an example of a method for bringing the wafer 1 into close contact with the mask 2.

ステージ3は水平な直交2軸X、 Y方向(Y軸は紙面
と垂直)、及びZ軸方向に精密に駆動される構造でるる
The stage 3 has a structure in which it is precisely driven in two horizontal orthogonal axes, the X and Y directions (the Y axis is perpendicular to the plane of the paper), and the Z axis direction.

上記の上下動可能なステージ3の上面に、多数の小穴4
を設けて真空吸着/4’ツドが形成されている。この吸
着・9ツドによってウェハ1を吸着保持してステージ3
をX、Y平面内で精密に駆動してマスク2に対して位置
合わせをした後、該ステージ3を矢印2方向に上昇せし
めてウェハ1をマスク2に密着させる。
There are many small holes 4 on the top surface of the stage 3 that can move up and down.
A vacuum suction/4' tube is formed by providing The wafer 1 is suctioned and held by this suction/nine, and the stage 3
After precisely driving the wafer 1 in the X and Y planes to align it with the mask 2, the stage 3 is raised in the direction of the arrow 2 to bring the wafer 1 into close contact with the mask 2.

ところが、マスク2に過大な押圧力を与えることなく、
ウェハ1とマスク2とを均一な圧力で密着させることは
容易でない。
However, without applying excessive pressure to the mask 2,
It is not easy to bring the wafer 1 and mask 2 into close contact with each other with uniform pressure.

マスク2に過大な押圧力を与えることなく、均一な力で
ウェハ1をマスク2に押し当てる為に、本発明者らは第
3図に示す方法を創作して別途出願中である。この方法
(以下、先願の方法を言う)は、吸着・やラドを形成し
ている小穴4を、切替弁5を介して排気ボン706及び
窒素ボンベ7に接続する。
In order to press the wafer 1 against the mask 2 with uniform force without applying an excessive pressing force to the mask 2, the present inventors have created a method shown in FIG. 3 and are currently filing a separate application. In this method (hereinafter referred to as the method of the prior application), the small hole 4 forming the adsorption/radish is connected to the exhaust cylinder 706 and the nitrogen cylinder 7 via the switching valve 5.

切換弁5をA位置に操作して排気ポンプ6を小穴4に連
通せしめ、仮想線で示したようにウェハ1′を吸着して
位置合わせした後、ステージ3を上昇せしめて上記のウ
ェハl′とマスク2とを微小間−で対向せしめ、次いで
切換弁5をB位置に操作して小穴4から窒素がスを噴出
せしめ、ウェハを実線で示した1の如く吹き上げてマス
ク2に密着させる。
The switching valve 5 is operated to the A position to communicate the exhaust pump 6 to the small hole 4, and after adsorbing and positioning the wafer 1' as shown by the imaginary line, the stage 3 is raised and the wafer l' and the mask 2 are made to face each other with a small distance, and then the switching valve 5 is operated to the B position to blow out nitrogen gas from the small hole 4, blowing up the wafer as shown by the solid line 1 and bringing it into close contact with the mask 2.

上記の先願の方法によれば、ウェハlが窒素気流によっ
て押し上げられるので、該ウェハlは全面的に均一にマ
スク4に押しつけられ、過大な押圧力や衝撃力を受ける
虞れが無い。
According to the method of the prior application, since the wafer 1 is pushed up by the nitrogen gas flow, the wafer 1 is uniformly pressed against the mask 4 over its entire surface, and there is no risk of receiving excessive pressing force or impact force.

また、噴出用の気体として窒素を用いると、ウェハに塗
布した感光剤と反応しない。
Furthermore, when nitrogen is used as the ejecting gas, it does not react with the photosensitizer applied to the wafer.

本方法を実施する際、窒素がスの代りにイナートガスを
用いることもできるが、イナートガスに比して窒素は安
価であるから実用価値が高い。
When carrying out this method, inert gas can be used instead of nitrogen gas, but nitrogen is cheaper than inert gas and therefore has higher practical value.

本発明者は上記の先願の装置について実用化試験を繰り
返した結果、次のような問題が有ることを発見した。
As a result of repeated practical tests on the device of the above-mentioned prior application, the inventor of the present invention discovered the following problems.

第3図に示したようにウェハ1′を1位置に押し上げて
マスク2に密着させる際、双方の部材の間に気体を挾み
込んで閉じこめてしまう虞れが有り、閉じこめられた気
体は密着を妨げる。
As shown in FIG. 3, when the wafer 1' is pushed up to the 1st position and brought into close contact with the mask 2, there is a risk that gas will be trapped between the two members, and the trapped gas will be tightly attached. prevent.

〔発明の目的〕[Purpose of the invention]

本発明は上述の事情に鑑みて為されたもので、先願の方
法(すなわち窒素ガスでウェハを吹き上げ°てマスクに
密着せしめる方法)を改良して、ウェハとマスクとの間
に気体を挾みこんで閉じこめる虞れの無い、ウェハとマ
スクとの密着方法を提供しようとするものである。
The present invention has been made in view of the above-mentioned circumstances, and is an improvement on the method of the previous application (that is, the method of blowing up the wafer with nitrogen gas and bringing it into close contact with the mask) to sandwich gas between the wafer and the mask. The object is to provide a method for bringing a wafer and a mask into close contact with each other without the risk of being trapped.

〔発明の概要〕[Summary of the invention]

上記の目的を達成する為に創作した本発明の方法は、マ
スクの下面側の空間を、該マスクの上面側の空間よりも
50〜400 m Hgだけ低圧にして、該マスクを下
方に向けて凸なる形に撓ませ、マスクの中央部とウェハ
の中央部とを最初に当接せしめ、双方の部材の間の気体
を周囲の方に押し出すことを特徴とする。
The method of the present invention created to achieve the above object is to lower the pressure in the space below the mask by 50 to 400 m Hg than the space above the mask, and to direct the mask downward. It is characterized in that it is bent into a convex shape, the center of the mask and the center of the wafer are brought into contact first, and the gas between both members is pushed out toward the periphery.

〔発明の実施例〕[Embodiments of the invention]

次に、本発明の1実施例を第1図について説明する。第
1図は、本発明方法を実施する為に構成した装置を模式
的に描いた説明図であって、寸法形状に関して正確な投
影図ではない。
Next, one embodiment of the present invention will be described with reference to FIG. FIG. 1 is an explanatory diagram schematically depicting an apparatus configured to carry out the method of the present invention, and is not an accurate projection diagram in terms of dimensions and shape.

8は、マスク2′を載置すべき頂面板で、開口8aを設
けである。マスク2′はこの開口8aを覆りて取り付け
られる。
8 is a top plate on which the mask 2' is placed, and is provided with an opening 8a. Mask 2' is attached to cover this opening 8a.

ステージ3′と頂面板8との間にベローズ9及び気体ベ
アリング10を設けてシールし、密閉された空間11を
構成する。
A bellows 9 and a gas bearing 10 are provided between the stage 3' and the top plate 8 to form a sealed space 11.

矢印N、の如く、前記の密閉空間11内に窒素ガスを供
給しつつ、矢印Vの如く該密閉空間11を排気して、こ
の空間11内の空気を窒素で置換する。これは、マスク
1に塗布した感光剤と反応しない雰囲気とするためであ
る。
While nitrogen gas is supplied into the sealed space 11 as shown by arrow N, the sealed space 11 is evacuated as shown by arrow V to replace the air in this space 11 with nitrogen. This is to create an atmosphere that does not react with the photosensitive agent applied to the mask 1.

前記の窒素ガス供給量よシも排気量を大きくして密閉空
間11内を減圧する。上記の減圧量は50〜400■H
gとする。該空間の減圧によって、マスク2′は図示の
如く下方に向かって凸なる形状に撓む。
In addition to the amount of nitrogen gas supplied, the amount of exhaust gas is increased to reduce the pressure in the sealed space 11. The above pressure reduction amount is 50~400■H
Let it be g. By reducing the pressure in the space, the mask 2' is bent downward into a convex shape as shown in the figure.

ただし、本第1図は歪み量を拡大誇張して描いてあシ、
実際の歪みは微視的である。
However, this Figure 1 is drawn with the amount of distortion enlarged and exaggerated.
Actual distortion is microscopic.

このようにして、マスク2′に対して下方に凸なるペン
ドを与えておいて、矢印n、の如く吸着・ぐラドの中央
付近から窒素ガスを噴出させ、ウェハ1の中央部を吹き
上げる。これ釦より、ウエノ・1は微小ながら上方に向
けて凸なる傾向に撓んで吹き上げられ、ウェハ1の中央
部とマスク2′の中央部とが最初に当接する。この場合
、減圧量が5(1mHg以下では所期の目的を達成する
に足る撓み量が得られないので、50+mHg以上に減
圧することが必要である。
In this way, a downwardly convex pendant is provided to the mask 2', and nitrogen gas is ejected from near the center of the suction/gradient as indicated by arrow n, blowing up the center of the wafer 1. When the button is pressed, the wafer 1 is slightly bent and blown upward in a convex manner, and the center of the wafer 1 and the center of the mask 2' first come into contact with each other. In this case, if the amount of pressure reduction is less than 5 (1 mHg), sufficient deflection to achieve the desired purpose cannot be obtained, so it is necessary to reduce the pressure to 50 + mHg or more.

その後、密閉空間ll内の気圧をコントロールしつつ、
ステージ3′の上下動をコントロールして、最終的には
第3図に示した如く、マスク2及びウェハ1が共に平面
を保ちつつ、ウェハ1の全面が窒素の噴出流によって上
方に押圧され、マスク2に対して全面均一に密着する状
態に導く。
After that, while controlling the air pressure inside the closed space,
By controlling the vertical movement of the stage 3', as shown in FIG. 3, the entire surface of the wafer 1 is pressed upward by the jet stream of nitrogen while the mask 2 and the wafer 1 both remain flat. The entire surface of the mask 2 is brought into a state of uniform close contact.

本実施例によれば、第1図について説明したように、最
初にウェハ2′の中央部とマスク1の中央部とが当接し
て密着し、次第に密着区域が周辺に向かって拡大してゆ
くので、双方の部材の間に気体(この場合は窒素ガス)
を挾みこんで閉じこめる虞れが無い。従って閉じこめら
れた気体によって密着を妨げられることなく、全面を完
全に密着する。しかし、前記の減圧量が400 mHg
を越えると撓み量が過大となシ、減圧を解除して平面状
に復元させるときに密着ずれを生じる虞れがある。
According to this embodiment, as explained with reference to FIG. 1, the center of the wafer 2' and the center of the mask 1 first come into contact and come into close contact, and the contact area gradually expands toward the periphery. Therefore, there is a gas (in this case nitrogen gas) between both parts.
There is no risk of it getting caught and trapped. Therefore, the entire surface is completely adhered without being hindered by the trapped gas. However, the amount of pressure reduction mentioned above is 400 mHg.
If it exceeds this amount, the amount of deflection will be excessive, and there is a risk that a gap in adhesion will occur when the reduced pressure is released and the flat surface is restored.

このため、減圧量は400 llmHg以内でなければ
ならない。
Therefore, the amount of pressure reduction must be within 400 llmHg.

〔発明の効果〕〔Effect of the invention〕

以上詳述したように、本発明の密着方法を適用してウェ
ハを窒素ガスで吹き上げてマスクに当接せしめると、ウ
ェハとマスクとの間に気体を挾みこんで閉じこめる虞れ
が無く、全面を均一かつ完全に密着させることができる
という優れた実用的効果を奏する。
As described in detail above, when the adhesion method of the present invention is applied and the wafer is blown up with nitrogen gas and brought into contact with the mask, there is no risk of gas being trapped between the wafer and the mask, and the entire surface is covered. It has an excellent practical effect of being able to achieve uniform and complete adhesion.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の密着方法を説明する為の模式図、第2
図はウェハをマスクに密着させる為の一般的な方法の説
明図、第3図は本発明方法を適用する対象となる先願に
係る技術の説明図である。 1.1′・・・ウェハ、2・・・マスク、2′・・・下
方に凸なる形状に撓んだウェハ、3・・・上下動可能な
ステージ、4・・・真空吸着・fラドを構成している小
穴、8・・・頂面板、8a・・・開口、9・・・ベロー
ズ、10・・・気体ベアリング、11・・・密閉された
空間。
Figure 1 is a schematic diagram for explaining the adhesion method of the present invention, Figure 2 is a schematic diagram for explaining the adhesion method of the present invention.
The figure is an explanatory diagram of a general method for bringing a wafer into close contact with a mask, and FIG. 3 is an explanatory diagram of a technique related to a prior application to which the method of the present invention is applied. 1.1'...Wafer, 2...Mask, 2'...Wafer bent in a downwardly convex shape, 3...Stage that can move up and down, 4...Vacuum suction/f-rad 8... Top plate, 8a... Opening, 9... Bellows, 10... Gas bearing, 11... Sealed space.

Claims (1)

【特許請求の範囲】[Claims] 上下動ステージの上面に設けた真空吸着パッドによって
ウェハを吸着保持し、上記の上下動ステージを上昇せし
めて吸着保持したウェハをマスクに対して微小間隙を介
して対向せしめ、前記の吸着パッドから窒素ガスを噴出
せしめ、ウェハを吹き上げてマスクに密着せしめる方法
において、前記のマスクの下面側の空間を50mmHg
〜400mmHgの範囲内で減圧して該マスクを下方に
向けて凸なるごとく撓ませて、マスクの中央部とウェハ
の中央部とを最初に当接せしめることを特徴とする、ウ
ェハとマスクとの密着方法。
The wafer is suctioned and held by a vacuum suction pad provided on the top surface of the vertically movable stage, and the vertically movable stage is raised so that the suctioned and held wafer faces the mask through a small gap, and nitrogen is removed from the suction pad. In the method of blowing out gas to blow the wafer up and bring it into close contact with the mask, the space under the mask is set to 50 mmHg.
A method of connecting a wafer and a mask, characterized in that the pressure is reduced within a range of ~400 mmHg and the mask is bent downward in a convex manner, so that the center of the mask and the center of the wafer first come into contact with each other. Close contact method.
JP60136828A 1985-06-25 1985-06-25 Bonding method for wafer and mask Pending JPS6211231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60136828A JPS6211231A (en) 1985-06-25 1985-06-25 Bonding method for wafer and mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60136828A JPS6211231A (en) 1985-06-25 1985-06-25 Bonding method for wafer and mask

Publications (1)

Publication Number Publication Date
JPS6211231A true JPS6211231A (en) 1987-01-20

Family

ID=15184450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60136828A Pending JPS6211231A (en) 1985-06-25 1985-06-25 Bonding method for wafer and mask

Country Status (1)

Country Link
JP (1) JPS6211231A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0435772U (en) * 1990-07-25 1992-03-25
WO2006137396A1 (en) * 2005-06-21 2006-12-28 Sanei Giken Co., Ltd. Exposing method and device
WO2008139643A1 (en) * 2007-05-10 2008-11-20 Sanei Giken Co., Ltd. Exposure method and exposure apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0435772U (en) * 1990-07-25 1992-03-25
WO2006137396A1 (en) * 2005-06-21 2006-12-28 Sanei Giken Co., Ltd. Exposing method and device
WO2008139643A1 (en) * 2007-05-10 2008-11-20 Sanei Giken Co., Ltd. Exposure method and exposure apparatus

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