JPS5980930A - Aligning method of wafer - Google Patents

Aligning method of wafer

Info

Publication number
JPS5980930A
JPS5980930A JP58157805A JP15780583A JPS5980930A JP S5980930 A JPS5980930 A JP S5980930A JP 58157805 A JP58157805 A JP 58157805A JP 15780583 A JP15780583 A JP 15780583A JP S5980930 A JPS5980930 A JP S5980930A
Authority
JP
Japan
Prior art keywords
wafer
mask
air
section
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58157805A
Other languages
Japanese (ja)
Inventor
Susumu Komoriya
進 小森谷
Kiyoshi Yoshida
清 吉田
Hiroshi Nishizuka
西塚 弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58157805A priority Critical patent/JPS5980930A/en
Publication of JPS5980930A publication Critical patent/JPS5980930A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a method through which a wafer and a mask are fast stuck and separated easily by projecting the central section of the wafer to bring the wafer into contact with the mask and slowly flattening the wafer so that a closely adhesive surface with the mask spreads to a peripheral section from the central section of the wafer. CONSTITUTION:When the wafer and the mask are fast stuck, air is blown off from air blow-off ports 12 and air is sucked from air suction ports 13, the central section of the wafer 21 is projected upward, and the peripheral section is adsorbed onto a wafer base plate 11. Consequently, when the wafer 21 is projected and the mask 22 is placed on the wafer 21, both are in contact only in the central projecting section of the wafer 21, and air is not brought to a sealed state between both, thus easily positioning the mask 22 at a predetermined position on the wafer 21. When the blow-off of air and the suction of air are stopped and the projecting deformation of the wafer 21 is released, the wafer 21 and the mask 22 shift easily to the closely adhesive state to the peripheral section from the central section.

Description

【発明の詳細な説明】 本発明は半導体ウェー八に所定のパターンを有するマス
クを位置合せするためのウェーハ整合に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to wafer alignment for aligning a mask having a predetermined pattern to a semiconductor wafer.

この種のウェーハ整合においてはウェーハ載置台の上に
表面にホトレジスト層を有する半導体ウ −エバを載置
し、さらKこのウェハ上に所定のパターンを有するマス
クを配置し、両者を密着してマスクのパターンをウェー
ハ上のホトレジスト層に焼付ける。この際、ウェハとマ
スクの中間に存在する空気が部分的に密封状態となって
、両者を所定の関係位置に保持しつつ密着状態にするの
に時間がかかり、また逆に、良好に密着したマスクをウ
ェハから引離す場合、両者の間に空気が入り込みにくい
ので、その引離しにも時間がかかる。この引離しの困難
さは特にクロム製マスクを使用し、かつ真空密着方式と
した場合において著しいものである。
In this type of wafer alignment, a semiconductor wafer having a photoresist layer on its surface is placed on a wafer mounting table, a mask having a predetermined pattern is placed on top of this wafer, and both are placed in close contact with each other. pattern is baked into the photoresist layer on the wafer. At this time, the air existing between the wafer and the mask becomes partially sealed, and it takes time to maintain the two in a predetermined position and bring them into contact. When separating the mask from the wafer, it takes time to separate the mask because it is difficult for air to enter between the two. This difficulty in separating is particularly remarkable when a chrome mask is used and a vacuum sealing method is used.

本発明の目的は、ウェハ載置台上に載置されたウェハと
マスクとの密着およびその引離しの容易なウェハ整合方
法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer alignment method that allows a wafer placed on a wafer mounting table to be brought into close contact with a mask and to easily separate the wafer and the mask.

この目的を達成するため本発明によるウェーハ整合方法
は、中央部に空気吹出し口を有し、周辺部に空気吸込み
口を有するウェハ載置台と、このウェハ載置台上に載置
されたウェハの上に配置されるマスクと、前記空気吹出
し口から空気を吹出させる手段と、前記空気吸込み口か
ら空気を吸込ませる手段とを準備し、前記ウェハ載置台
上に載置されたウェハは、前記空気吹出し口からの空気
吹出し作用により中央部が盛上げられ、かつ前記空気吸
込み口からの空気吸込み作用により周辺部が前記ウェハ
載置台上に吸着される。これにより前記ウェハそりを生
じさせることにより、ウェハとマスクとの相互の密着作
業を行なうものである。
In order to achieve this object, the wafer alignment method according to the present invention includes a wafer mounting table having an air outlet in the center and an air suction port in the periphery, and an upper surface of the wafer placed on the wafer mounting table. A mask placed on the wafer mounting table, a means for blowing air from the air outlet, and a means for sucking air from the air suction port are prepared, and the wafer placed on the wafer mounting table is placed in the air outlet. The center portion is raised by the air blowing action from the opening, and the peripheral portion is attracted onto the wafer mounting table by the air suction action from the air suction port. By causing the wafer warpage, the wafer and mask are brought into close contact with each other.

第1図及び第2図において11は本発明の実施に供する
ウェハ載置台である。このウェハ載置台11には中央部
に適当間隔で複数個の空気吹出し口12が設けられ、ま
た周辺部にほぼ等間隔に周方向に分布して空気吸込み口
13が設けられている。各空気吹出し口12は環状の連
通孔14を介して相互に連通しており、しかも載置台1
1の側面に開口する連通孔16を介して圧縮空気板に接
続される。また各空気吸込み口13は環状の連通孔17
を介して相互に連通され、上記と同様に載置台11の側
面に開口する連通孔18を介して真空装置に接続される
In FIGS. 1 and 2, reference numeral 11 denotes a wafer mounting table used for carrying out the present invention. The wafer mounting table 11 is provided with a plurality of air blowing ports 12 at appropriate intervals in the center thereof, and air suction ports 13 are provided in the periphery thereof distributed at approximately equal intervals in the circumferential direction. Each air outlet 12 communicates with each other via an annular communication hole 14, and the mounting table 1
It is connected to the compressed air plate through a communication hole 16 that opens on one side. Furthermore, each air suction port 13 has an annular communication hole 17.
, and connected to the vacuum device through the communication hole 18 opened in the side surface of the mounting table 11 in the same way as described above.

ウェハ載置台11の上に表面にホトレジスト層を有する
ウェハ21が載置され、さらKその上にマスク22が配
置される。ウェハ21は例えば半導体ウェハであり、マ
スク22は例えばクロムマスクでありうる。そしてウェ
ハ21およびマスク22は真空チャックないし真空ピン
セットを用いてウェハ載置台11上に持ってきたり、そ
こから持っていったりすることが、できる。
A wafer 21 having a photoresist layer on its surface is placed on the wafer mounting table 11, and a mask 22 is placed on top of the wafer 21. The wafer 21 may be, for example, a semiconductor wafer, and the mask 22 may be, for example, a chrome mask. The wafer 21 and mask 22 can be brought onto and from the wafer mounting table 11 using a vacuum chuck or vacuum tweezers.

さて、ウェーハとマスクの整合が完了した後、ウェハと
マスクを密着するときには、空気吹出し口12からの空
気吹出し、および空気吸込み口13からの空気吸込みを
行って、ウェハ21を図示のごとく中央部は上方に盛上
がらせ、周辺部はウェハ載置台11上に吸着させる。こ
のようにして、ウェハ21をそらせておいて、マスク2
2をウェハ21の上に載置すると両者はウェハ21の中
央盛上がり部のみで当接し、両者の間に空気が密封状態
となることはないので、マスク22をウエノ・21上の
所定位置に容易罠位置させることができる。この後、空
気吹出しおよび空気吸込みを中止してウェハ21の盛上
がり変形を解除すれば、ウェハ21とマスク22とは中
央部から周辺部へと容易に密着状態へと移行することに
なる。
Now, after the alignment of the wafer and the mask is completed, when the wafer and the mask are brought into close contact with each other, air is blown out from the air outlet 12 and air is sucked in from the air suction port 13 to move the wafer 21 to the central part as shown in the figure. is raised upward, and the peripheral portion is adsorbed onto the wafer mounting table 11. In this way, the wafer 21 is kept deflected and the mask 2
When the mask 2 is placed on the wafer 21, the two come into contact only at the central raised part of the wafer 21, and there is no air seal between the two, so it is easy to place the mask 22 in a predetermined position on the wafer 21. Traps can be placed. Thereafter, if air blowing and air suction are stopped to release the bulging deformation of the wafer 21, the wafer 21 and the mask 22 can easily be brought into close contact from the center to the periphery.

以上述べたように本発明によれば、ウェハ載置台上に載
置されたウェハとマスクとの密着の容易なウェーハ整合
方法を提供することができる。
As described above, according to the present invention, it is possible to provide a wafer alignment method that facilitates close contact between a wafer placed on a wafer mounting table and a mask.

また、本発明の方法によれば、ウェハとマスクの密着面
すなわち、レジスト面にガスが残留するコ〉カないので
、精度のよい露光を行なうことができる。
Further, according to the method of the present invention, since there is no possibility that gas remains on the contact surface between the wafer and the mask, that is, on the resist surface, highly accurate exposure can be performed.

また、残留ガスがないので、露光中にガスが移動して密
着状態が変化する等の問題もおこらない。
Furthermore, since there is no residual gas, problems such as gas movement and changes in adhesion during exposure do not occur.

さらに、本発明ではウニへのソリを利用して無理なく残
留ガスを排除するので、レジスト・パターンの変形等が
おこることもない。
Furthermore, in the present invention, residual gas is removed without difficulty by utilizing the warping of the sea urchin, so that deformation of the resist pattern does not occur.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施に供するウェーハ整合装置の一例
を示す縦断面図、第2図は第1図の■、−■線から見た
平面図である。 符号の説明 11・・・ウェハ載置台、12・・・空気吹出し口、1
3・・・空気吸込み口、14.16,17.18・・・
連通孔、21・・・ウェハ、22・・・マスク。
FIG. 1 is a longitudinal cross-sectional view showing an example of a wafer alignment apparatus used for carrying out the present invention, and FIG. 2 is a plan view taken from the lines 1 and 2 in FIG. Explanation of symbols 11... Wafer mounting table, 12... Air outlet, 1
3... Air intake port, 14.16, 17.18...
Communication hole, 21... wafer, 22... mask.

Claims (1)

【特許請求の範囲】 1、(a)  ウェハ及びマスクの相対位置を合せる工
程(b)  上記ウェハ及びマスクの面間距離を減少さ
せる工程 (C)  吸着された上記ウニへの中央部を突出させて
上記マスクに接触させる工程 (d)  上記ウェハの中央部から周辺部に上記マスク
との密着面が広がるように徐々にウェハを平坦化する工
程 よりなるウェハ整合方法。
[Claims] 1. (a) Step of aligning the relative positions of the wafer and mask (b) Step of reducing the distance between the surfaces of the wafer and mask (C) Protruding the central part of the attracted sea urchin (d) bringing the wafer into contact with the mask; a wafer alignment method comprising the step of gradually flattening the wafer so that the surface in close contact with the mask spreads from the center of the wafer to the periphery;
JP58157805A 1983-08-31 1983-08-31 Aligning method of wafer Pending JPS5980930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157805A JPS5980930A (en) 1983-08-31 1983-08-31 Aligning method of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157805A JPS5980930A (en) 1983-08-31 1983-08-31 Aligning method of wafer

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51146522A Division JPS6053464B2 (en) 1976-12-08 1976-12-08 Wafer alignment equipment

Publications (1)

Publication Number Publication Date
JPS5980930A true JPS5980930A (en) 1984-05-10

Family

ID=15657669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58157805A Pending JPS5980930A (en) 1983-08-31 1983-08-31 Aligning method of wafer

Country Status (1)

Country Link
JP (1) JPS5980930A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066585A (en) * 2004-08-26 2006-03-09 Ushio Inc Irradiation device
JP2007036101A (en) * 2005-07-29 2007-02-08 Dainippon Printing Co Ltd Work stage of exposure machine and exposure method
JP2009237442A (en) * 2008-03-28 2009-10-15 Ushio Inc Light irradiation device and method of removing mask in light irradiation device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066585A (en) * 2004-08-26 2006-03-09 Ushio Inc Irradiation device
JP4572626B2 (en) * 2004-08-26 2010-11-04 ウシオ電機株式会社 Light irradiation device
JP2007036101A (en) * 2005-07-29 2007-02-08 Dainippon Printing Co Ltd Work stage of exposure machine and exposure method
JP2009237442A (en) * 2008-03-28 2009-10-15 Ushio Inc Light irradiation device and method of removing mask in light irradiation device

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