TWI596698B - Holding device, lithography apparatus, and method for manufacturing item - Google Patents
Holding device, lithography apparatus, and method for manufacturing item Download PDFInfo
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Description
本發明涉及一種保持裝置、微影設備以及用於製造物品的方法。 The present invention relates to a holding device, a lithography apparatus, and a method for manufacturing an article.
存在這樣的情況,在所述情況中,在製造半導體裝置等的處理中所使用的曝光設備設置有基板,所述基板具有表面不規則部或者彎曲部。當由真空吸引保持基板時,吸力可能因由基板的周緣的彎曲部而造成的空氣洩漏而減小。另外,當在吸力較小的狀態中將圖案轉印到基板上並且基板的表面不規則程度或者彎曲程度較大時,轉印的圖案可能將變形,從而導致製造的裝置的產量較低。 There is a case in which the exposure apparatus used in the process of manufacturing a semiconductor device or the like is provided with a substrate having surface irregularities or curved portions. When the substrate is held by vacuum suction, the suction may be reduced by air leakage caused by the curved portion of the periphery of the substrate. In addition, when the pattern is transferred onto the substrate in a state where the suction force is small and the surface irregularity or the degree of curvature of the substrate is large, the transferred pattern may be deformed, resulting in a low yield of the manufactured device.
日本專利特開No.2002-217276揭露了一種保持裝置,在所述保持裝置中,密封構件佈置在基板保持表面的外周上,該密封構件是彈性體。由於密封構件以符合基板的周緣的形狀的方式變形,因此降低了空氣從基板和基板保持表面之間的空間洩漏的可能性,使得吸力增大。保持 裝置的基板保持表面包括板狀構件,所述板狀構件具有吸氣孔,所述吸氣孔具有相同的尺寸和相同的形狀並且以特定的間距佈置。 Japanese Patent Laid-Open No. 2002-217276 discloses a holding device in which a sealing member is disposed on an outer circumference of a substrate holding surface, which is an elastic body. Since the sealing member is deformed in such a manner as to conform to the shape of the periphery of the substrate, the possibility of air leakage from the space between the substrate and the substrate holding surface is reduced, so that the suction force is increased. maintain The substrate holding surface of the device includes a plate-like member having suction holes having the same size and the same shape and arranged at a specific pitch.
與在日本專利特開No.2002-217276中描述的保持裝置相同,當藉由同時使用具有相同尺寸和相同形狀以及以特定間距佈置的所有吸氣孔實施吸氣時,基板保持表面處的負壓分佈均勻,或者周緣處的負壓小於其它部分處的負壓。鑒於隨著最近用於製造裝置的各種處理增加,大多數情況是將已經大幅變形(例如大幅彎曲)的基板運送到曝光設備中的情況,可能難以校正由於基板周緣處的小吸力而導致的基板周緣的彎曲。 As with the holding device described in Japanese Patent Laid-Open No. 2002-217276, when suction is performed by simultaneously using all the suction holes having the same size and the same shape and arranged at a specific pitch, the negative at the substrate holding surface The pressure distribution is uniform, or the negative pressure at the periphery is smaller than the negative pressure at the other portions. In view of the fact that with the recent increase in various processes for manufacturing devices, in most cases, the substrate which has been greatly deformed (for example, greatly bent) is transported into the exposure apparatus, it may be difficult to correct the substrate due to the small suction force at the periphery of the substrate. The curvature of the circumference.
本發明的一個方面提供了一種保持裝置和一種微影設備,較之藉由同時使用相同的真空源和使用具有相同尺寸和相同形狀且以特定間距佈置的所有吸氣孔實施吸氣的情況,所述保持裝置和所述微影設備能夠更好地校正基板的彎曲。 One aspect of the present invention provides a holding device and a lithography apparatus, in which suction is performed by simultaneously using the same vacuum source and using all the suction holes having the same size and the same shape and arranged at a specific pitch, The holding device and the lithography apparatus are capable of better correcting the curvature of the substrate.
根據本發明的一個方面的保持裝置是這樣的保持裝置,所述保持裝置構造成保持基板並且包括:保持構件,在所述保持構件中形成有多個吸氣孔,所述吸氣孔用於排空基板和保持構件之間的空間中的空氣;和密封構件,所述密封構件具有環狀並且佈置在保持構件的階梯部分的下表面上而且界定了所述空間。當與保持構件的保持表面的 平面圖形的中心同心並且藉由減小平面圖形的尺寸2/3以上且4/5以下而獲得的圖形的內部區域被設定為第一區域並且第一區域和密封構件之間的區域被設定為第二區域時,多個吸氣孔被形成為使得滿足以下關係:形成在第二區域中的吸氣孔的總面積與第二區域的面積的比大於形成在包括第一區域加上第二區域的總區域中的吸氣孔的總面積與該總區域的面積的比。 A holding device according to an aspect of the present invention is a holding device configured to hold a substrate and includes: a holding member in which a plurality of suction holes are formed, the suction holes being used for The air in the space between the substrate and the holding member is evacuated; and a sealing member having an annular shape and disposed on a lower surface of the stepped portion of the holding member and defining the space. When with the retaining surface of the retaining member The center of the plane pattern is concentric and the inner region of the pattern obtained by reducing the size of the planar pattern by 2/3 or more and 4/5 or less is set as the first region and the region between the first region and the sealing member is set to In the second region, the plurality of suction holes are formed such that a relationship is satisfied that a ratio of a total area of the suction holes formed in the second region to an area of the second region is larger than that formed in the first region including the second The ratio of the total area of the suction holes in the total area of the area to the area of the total area.
參照附圖從示例性實施例的以下描述中,本發明的其它特徵將變得顯而易見。 Further features of the present invention will become apparent from the following description of exemplary embodiments.
1‧‧‧曝光設備(微影設備) 1‧‧‧Exposure equipment (lithography equipment)
2‧‧‧遮罩 2‧‧‧ mask
3‧‧‧基板 3‧‧‧Substrate
4‧‧‧投影光學系統 4‧‧‧Projection optical system
5‧‧‧照射光學系統 5‧‧‧Optical optical system
6‧‧‧照明光(光束) 6‧‧‧ illumination light (beam)
7‧‧‧平台 7‧‧‧ platform
8‧‧‧干涉計 8‧‧‧Interferometer
9‧‧‧反射鏡 9‧‧‧Mirror
10‧‧‧保持裝置 10‧‧‧ Keeping device
11‧‧‧干涉計 11‧‧‧Interferometer
12‧‧‧反射鏡 12‧‧‧Mirror
13‧‧‧平台 13‧‧‧ platform
14‧‧‧檢測系統 14‧‧‧Detection system
15‧‧‧標記台 15‧‧‧Marking station
16‧‧‧卡盤(保持構件) 16‧‧‧ chuck (holding member)
17‧‧‧銷 17‧‧ ‧ sales
18‧‧‧控制單元 18‧‧‧Control unit
31‧‧‧唇形密封件(密封構件) 31‧‧‧Lip seal (sealing member)
32‧‧‧吸孔(吸氣孔) 32‧‧‧ suction hole (suction hole)
33‧‧‧管 33‧‧‧ tube
33a‧‧‧管 33a‧‧‧管
33b‧‧‧真空源 33b‧‧‧vacuum source
34‧‧‧閥 34‧‧‧Valves
35‧‧‧空間 35‧‧‧ Space
36‧‧‧銷孔 36‧‧ ‧ pinhole
37‧‧‧吸孔 37‧‧‧ suction hole
38‧‧‧邊界 38‧‧‧ border
39a‧‧‧階梯部分 39a‧‧‧Step part
39b‧‧‧側表面 39b‧‧‧ side surface
39c‧‧‧底部表面 39c‧‧‧ bottom surface
40‧‧‧區域 40‧‧‧Area
41‧‧‧區域 41‧‧‧Area
42‧‧‧區域 42‧‧‧Area
43‧‧‧突出部分 43‧‧‧ highlight
44‧‧‧突出部分 44‧‧‧ highlight
45‧‧‧唇形密封件(閥) 45‧‧‧Lip seals (valves)
46‧‧‧閥 46‧‧‧Valves
47‧‧‧閥 47‧‧‧Valves
48‧‧‧吸孔 48‧‧‧ suction holes
50‧‧‧卡盤 50‧‧‧ chuck
55‧‧‧控制單元 55‧‧‧Control unit
圖1是圖解了根據第一至第三實施例的曝光設備的簡圖;圖2A和圖2B都是圖解了根據第一實施例保持裝置的簡圖(從水平方向觀察時的截面圖);圖3是圖解了根據第一實施例的修改方案的保持裝置的簡圖(從水平方向觀察時的截面圖);圖4是圖解了根據第一實施例的保持裝置的簡圖(從正上方觀察時的簡圖);圖5A和圖5B都是圖解了根據一示例的保持裝置的簡圖;圖6是圖解了根據第二實施例的保持裝置的簡圖;圖7是圖解了根據第三實施例的保持裝置的簡圖;圖8A和圖8B都是圖解了根據第三實施例的修改方 案的保持裝置的簡圖;圖9是圖解了唇形密封件的另一種形狀的第一解釋性簡圖;圖10是圖解了唇形密封件的另一種形狀的第二解釋性簡圖。 1 is a diagram illustrating an exposure apparatus according to first to third embodiments; FIGS. 2A and 2B are diagrams each illustrating a holding apparatus according to a first embodiment (a cross-sectional view when viewed from a horizontal direction); 3 is a diagram illustrating a holding device according to a modification of the first embodiment (a cross-sectional view when viewed from a horizontal direction); FIG. 4 is a diagram illustrating a holding device according to the first embodiment (from directly above FIG. 5A and FIG. 5B are both schematic diagrams illustrating a holding device according to an example; FIG. 6 is a diagram illustrating a holding device according to a second embodiment; FIG. 7 is a diagram illustrating A schematic diagram of a holding device of the third embodiment; FIGS. 8A and 8B are both diagrams illustrating a modified party according to the third embodiment BRIEF DESCRIPTION OF THE DRAWINGS Figure 9 is a first explanatory diagram illustrating another shape of a lip seal; Figure 10 is a second explanatory diagram illustrating another shape of the lip seal.
將參照圖1描述根據第一實施例的曝光設備(微影設備)1的構造。曝光設備1是投影曝光設備,所述投影曝光設備以掃描遮罩2和基板3同時藉由步進反復曝光系統使得遮罩2和基板3運動的方式將作為照明光(光束)6的i-線(波長為365nm)發射到遮罩2和基板3上,並且將形成在遮罩2上的圖案(例如,電路圖案或類似物)轉印到基板3上。在圖1中,與投影光學系統4的光軸延伸所沿的方向(在第一實施例中為直立方向)平行的軸線是Z軸線。在垂直於Z軸線的平面中,在遮罩2藉由被照明光6照射而被掃描時遮罩2運動所沿的方向是X軸線,並且垂直於X軸線的非掃描方向是Y軸線。 The configuration of the exposure apparatus (lithography apparatus) 1 according to the first embodiment will be described with reference to Fig. 1 . The exposure apparatus 1 is a projection exposure apparatus that scans the mask 2 and the substrate 3 while moving the mask 2 and the substrate 3 by a step-and-repeat exposure system as i- of the illumination light (light beam) 6. A line (having a wavelength of 365 nm) is emitted onto the mask 2 and the substrate 3, and a pattern (for example, a circuit pattern or the like) formed on the mask 2 is transferred onto the substrate 3. In Fig. 1, an axis parallel to the direction in which the optical axis of the projection optical system 4 extends (the upright direction in the first embodiment) is the Z axis. In a plane perpendicular to the Z axis, the direction in which the mask 2 moves when the mask 2 is scanned by being illuminated by the illumination light 6 is the X axis, and the non-scanning direction perpendicular to the X axis is the Y axis.
由照射光學系統5形成的照明光6經由遮罩2和投影光學系統4照射到基板3上。基板3例如為單晶矽基板並且抗蝕劑被施加到基板3的表面。遮罩2隨著平台7運動。干涉計8將雷射光束照射到反射鏡9上並且接收已經由反射鏡9反射的光,以便檢測平台7的位置。平台7包括用於遮罩2的平台頂板(未示出)和運動機構(未示 出),所述運動機構使得平台頂板運動。 The illumination light 6 formed by the illumination optical system 5 is irradiated onto the substrate 3 via the mask 2 and the projection optical system 4. The substrate 3 is, for example, a single crystal germanium substrate and a resist is applied to the surface of the substrate 3. The mask 2 moves with the platform 7. The interferometer 8 illuminates the laser beam onto the mirror 9 and receives the light that has been reflected by the mirror 9 to detect the position of the stage 7. The platform 7 includes a platform top plate (not shown) for the mask 2 and a moving mechanism (not shown) The moving mechanism causes the platform top to move.
基板3連同保持裝置10和平台13一起沿著六個軸向方向運動,所述保持裝置藉由真空吸引保持基板3。干涉計11藉由使用反射鏡12憑藉與在檢測平台7的位置的情況中類似的方法來檢測平台13的位置。平台13包括用於基板3的平台頂板(未示出)和運動機構(未示出),所述運動機構使得平台頂板運動。 The substrate 3 moves along the six axial directions together with the holding device 10 and the stage 13, which holds the substrate 3 by vacuum suction. The interferometer 11 detects the position of the platform 13 by using a mirror 12 by means similar to the case of detecting the position of the platform 7. The platform 13 includes a platform top plate (not shown) for the substrate 3 and a moving mechanism (not shown) that moves the platform top plate.
檢測系統14檢測形成在基板3上的對準標記(未示出)和形成在標記台15上的基準標記(未示出),所述標記台15安裝在平台13上。檢測系統14檢測對準標記和基準標記,下文將描述的控制單元18設定圖案形成位置。檢測系統14是軸偏離對準檢測系統,所述軸偏離對準檢測系統在不使用投影光學系統4的情況下檢測對準標記和基準標記。 The detecting system 14 detects an alignment mark (not shown) formed on the substrate 3 and a reference mark (not shown) formed on the marking table 15, which is mounted on the stage 13. The detection system 14 detects the alignment mark and the reference mark, and the control unit 18, which will be described later, sets the pattern forming position. The detection system 14 is an axis deviation alignment detection system that detects alignment marks and fiducial marks without using the projection optical system 4.
保持裝置10包括卡盤(保持構件)16,所述卡盤16吸引並且保持基板3;銷17,所述銷17在將基板3運送到曝光設備1中或者從曝光設備1運送出來時支撐基板3;和提升機構(未示出),所述提升機構沿著Z軸線方向提升以及降低卡盤16。藉由提升和降低卡盤16的操作,當基板3被運送到曝光設備1中時基板3被從銷17傳送到卡盤16,當將基板3從曝光設備1運送出來時基板3被從卡盤16傳送到銷17。將下文詳細描述保持裝置10的構造。 The holding device 10 includes a chuck (holding member) 16 that attracts and holds the substrate 3, and a pin 17 that supports the substrate when the substrate 3 is transported into or out of the exposure apparatus 1. And a lifting mechanism (not shown) that lifts and lowers the chuck 16 in the Z-axis direction. By raising and lowering the operation of the chuck 16, the substrate 3 is transferred from the pin 17 to the chuck 16 when the substrate 3 is transported into the exposure apparatus 1, and the substrate 3 is taken from the card when the substrate 3 is carried out from the exposure apparatus 1. The disk 16 is transferred to the pin 17. The configuration of the holding device 10 will be described in detail below.
控制單元18連接到平台7和13、檢測系統14、干涉 計8和11以及保持裝置10,以便一體地控制它們。例如,當實施曝光處理時,控制單元18基於由檢測系統14獲得的檢測結果設定圖案形成位置並且基於由干涉計8和11獲得的平台7和13的位置資訊控制平台7和13的運動。另外,當將基板3運送到曝光設備1中或者從曝光設備1中運送出來時控制單元18控制保持裝置10的提升機構和平台13的運動。控制單元18可以佈置在殼體中,在所述殼體中容納有除了控制單元18之外的部件構件,或者控制單元18可以佈置在與該殼體不同的殼體中。 Control unit 18 is connected to platforms 7 and 13, detection system 14, interference Meters 8 and 11 and holding device 10 are used to control them integrally. For example, when the exposure processing is performed, the control unit 18 sets the pattern forming position based on the detection result obtained by the detecting system 14 and controls the movement of the stages 7 and 13 based on the position information of the stages 7 and 13 obtained by the interferometers 8 and 11. In addition, the control unit 18 controls the movement of the lifting mechanism of the holding device 10 and the platform 13 when the substrate 3 is transported into or out of the exposure apparatus 1. The control unit 18 may be arranged in a housing in which component components other than the control unit 18 are housed, or the control unit 18 may be arranged in a different housing than the housing.
將參照圖2A和2B描述吸引基板3的操作。圖2A和圖2B均是藉由卡盤16的中心的X-Z平面的截面圖,其圖解了卡盤16和週邊構件。 The operation of attracting the substrate 3 will be described with reference to FIGS. 2A and 2B. 2A and 2B are each a cross-sectional view through the X-Z plane of the center of the chuck 16, which illustrates the chuck 16 and peripheral members.
圖2A圖解了基板3的運送已經完成並且基板3已經被傳送到卡盤16的狀態。卡盤16包括中央部分(第一區域)和周緣部分(第二區域)。中央部分和周緣部分之間的邊界由假想邊界38表示。多個吸孔(吸氣孔)32形成在中央部分中和周緣部分中。 FIG. 2A illustrates a state in which the conveyance of the substrate 3 has been completed and the substrate 3 has been transferred to the chuck 16. The chuck 16 includes a central portion (first region) and a peripheral portion (second region). The boundary between the central portion and the peripheral portion is represented by an imaginary boundary 38. A plurality of suction holes (suction holes) 32 are formed in the central portion and in the peripheral portion.
在此,在第一實施例中,卡盤16的前表面中的中央部分是位於圓形內部的區域,所述前表面是面向基板3的基板保持表面(保持表面),所述圓形被設定作為邊界38並且與基板保持表面的中心同心。周緣部分是位於邊界38外的區域。邊界38設定為使得中央部分的面積和周緣部分的面積相等。周緣部分包括卡盤16的階梯部分39a的側表面39b。側表面39b是面向將在下文詳細描述 的唇形密封件31的區域並且用於佈置唇形密封件31。 Here, in the first embodiment, the central portion in the front surface of the chuck 16 is a region located inside the circle, the front surface being a substrate holding surface (holding surface) facing the substrate 3, the circular shape being Set as boundary 38 and concentric with the center of the substrate holding surface. The peripheral portion is an area outside the boundary 38. The boundary 38 is set such that the area of the central portion and the area of the peripheral portion are equal. The peripheral portion includes a side surface 39b of the stepped portion 39a of the chuck 16. The side surface 39b is oriented and will be described in detail below. The area of the lip seal 31 is also used to arrange the lip seal 31.
所有吸孔32均經由管33a與管33連通,所述管33作為用於所有吸孔32的共用管。管33用於將管33a合併為一根管,所述管33a以各自聯接到相應的一個吸孔32的方式分支。管33連接到真空源33b。閥34佈置在管33和真空源33b之間。藉由切換閥34,能夠選擇是藉由經由管33連接到真空源33b的所有吸孔32來排放卡盤16和基板3之間的空間中存在的氣體,還是藉由經由管33連接到閥34的所有吸孔32將空氣送到卡盤16和基板3之間的空間中。管33佈置在對應於卡盤16的中央部分的位置處,即,當沿著卡盤16的厚度方向在邊界38處切割卡盤16時位於邊界38內的位置。特別地,如圖2A和2B等所示,管33在X-Y平面中的位置可以靠近中央部分的中心,以便抑制吸孔32和管33之間的距離在X-Y平面中較短的位置和吸孔32和管33之間的距離在X-Y平面中的較長的位置之間出現空氣排空力的大小差異。 All of the suction holes 32 communicate with the tube 33 via a tube 33a as a common tube for all the suction holes 32. The tube 33 is used to merge the tubes 33a into one tube, which branches in such a manner as to be coupled to the respective one of the suction holes 32. Tube 33 is connected to vacuum source 33b. Valve 34 is disposed between tube 33 and vacuum source 33b. By switching the valve 34, it is possible to select whether the gas present in the space between the chuck 16 and the substrate 3 is discharged by being connected to all the suction holes 32 of the vacuum source 33b via the tube 33, or by connecting to the valve via the tube 33. All of the suction holes 32 of 34 send air to the space between the chuck 16 and the substrate 3. The tube 33 is disposed at a position corresponding to the central portion of the chuck 16, that is, a position within the boundary 38 when the chuck 16 is cut at the boundary 38 along the thickness direction of the chuck 16. In particular, as shown in FIGS. 2A and 2B and the like, the position of the tube 33 in the XY plane may be close to the center of the central portion in order to suppress the distance between the suction hole 32 and the tube 33 in a shorter position in the XY plane and the suction hole. The difference between the distance between 32 and the tube 33 occurs between the longer positions in the XY plane.
具有圓狀或者環狀的唇形密封件(密封構件)31佈置在底部表面39c上,所述底部表面39c是卡盤16的階梯部分39a的下表面。唇形密封件31是彈性構件並且用黏合劑(諸如黏合片)固定到卡盤16。當基板3放置在卡盤16上時,唇形密封件31與基板3的周緣附近的部分接觸。利用這種構造,基板3和基板保持表面之間的空間35的區域由唇形密封件31界定。 A lip seal (sealing member) 31 having a circular shape or a ring shape is disposed on the bottom surface 39c which is a lower surface of the stepped portion 39a of the chuck 16. The lip seal 31 is an elastic member and is fixed to the chuck 16 with an adhesive such as an adhesive sheet. When the substrate 3 is placed on the chuck 16, the lip seal 31 is in contact with a portion near the periphery of the substrate 3. With this configuration, the area of the space 35 between the substrate 3 and the substrate holding surface is defined by the lip seal 31.
閥34被釋放到存在大氣空間的側部。儘管基板3的 周緣附近的部分和唇形密封件31相互接觸,但是所述部分和唇形密封件31沒有相互完全緊密接觸,而且依照基板3的周緣的彎曲在所述部分和唇形密封件31之間存在小間隙。 Valve 34 is released to the side where atmospheric space is present. Despite the substrate 3 The portion near the circumference and the lip seal 31 are in contact with each other, but the portion and the lip seal 31 are not completely in close contact with each other, and are present between the portion and the lip seal 31 in accordance with the curvature of the periphery of the substrate 3. Small gap.
藉由將閥34從圖2A圖解的狀態切換到佈置有真空源33b的一側,藉由所有吸孔32排空空間35中的空氣。可以在提升卡盤16時的期間(即,在將基板3從銷17完全傳送到卡盤16之前)實施切換閥34的操作。 By switching the valve 34 from the state illustrated in FIG. 2A to the side where the vacuum source 33b is disposed, the air in the space 35 is evacuated by all the suction holes 32. The operation of the switching valve 34 can be performed during the time when the chuck 16 is lifted (i.e., before the substrate 3 is completely transferred from the pin 17 to the chuck 16).
如圖2B所示,隨著空間35中的負壓增大,由大氣壓力對基板3施壓並且所述基板3變形,以便符合卡盤16的基板保持表面的形狀。在這種情況中,唇形密封件31開始變形,以便符合基板3的周緣的形狀並且逐漸與基板3緊密接觸。 As shown in FIG. 2B, as the negative pressure in the space 35 increases, the substrate 3 is pressed by atmospheric pressure and the substrate 3 is deformed so as to conform to the shape of the substrate holding surface of the chuck 16. In this case, the lip seal 31 starts to deform so as to conform to the shape of the periphery of the substrate 3 and gradually comes into close contact with the substrate 3.
因為唇形密封件31的端部部分定位成高於卡盤16的基板保持表面,所以即使在基板3的邊緣彎曲的情況中,基板3的彎曲部分和唇形密封件31也易於相互接觸。結果,空間35能夠易於被嚴密地密封,並且能夠排空空間35中的空氣。與沒有設置唇形密封件31的情況相比,空間35更易於被嚴密地密封,並且施加到基板3的吸力增大,使得基板3能夠被校正以便成為平面。 Since the end portion of the lip seal 31 is positioned higher than the substrate holding surface of the chuck 16, even in the case where the edge of the substrate 3 is curved, the curved portion of the substrate 3 and the lip seal 31 are easily in contact with each other. As a result, the space 35 can be easily sealed tightly and the air in the space 35 can be evacuated. The space 35 is more easily sealed tightly than in the case where the lip seal 31 is not provided, and the suction applied to the substrate 3 is increased, so that the substrate 3 can be corrected to become a flat surface.
因此,唇形密封件31可以是柔軟構件,其能夠容易地變形並且能夠擴展和收縮。可以使用包含合成橡膠(諸如,矽橡膠或者氟橡膠)的聚合材料(彈性聚合材料),並且替代地,可以使用不同的軟樹脂或者金屬材料。 Therefore, the lip seal 31 can be a flexible member that can be easily deformed and can be expanded and contracted. A polymeric material (elastic polymeric material) comprising a synthetic rubber such as ruthenium rubber or fluororubber may be used, and alternatively, a different soft resin or metallic material may be used.
在基板3被保持裝置10吸到卡盤16的狀態中,曝光設備1實施曝光處理。在已經完成曝光處理之後,控制保持裝置10並且使得基板3進入可運送狀態。 In a state where the substrate 3 is sucked by the holding device 10 to the chuck 16, the exposure device 1 performs exposure processing. After the exposure processing has been completed, the holding device 10 is controlled and the substrate 3 is brought into a transportable state.
圖4是當從正Z軸線方向觀察時卡盤16的視圖。吸孔32和銷孔36形成為圓形,所述圓形與基板保持表面同心。 Figure 4 is a view of the chuck 16 when viewed from the direction of the positive Z axis. The suction hole 32 and the pin hole 36 are formed in a circular shape which is concentric with the substrate holding surface.
銷孔36中的每一個均以延伸貫穿卡盤16的三個部分中的一個部分的方式形成。當提升機構使得卡盤16沿著負Z軸線方向運動時,銷17從銷孔36的內部相對伸出。因為銷17和對應銷孔36之間的間隙由密封構件(未示出)一直封閉,所以在實施基板3的吸引時不會發生空氣洩漏。 Each of the pin holes 36 is formed in a manner extending through one of the three portions of the chuck 16. When the lifting mechanism moves the chuck 16 in the negative Z-axis direction, the pin 17 projects relatively from the inside of the pin hole 36. Since the gap between the pin 17 and the corresponding pin hole 36 is always closed by the sealing member (not shown), air leakage does not occur at the time of performing the suction of the substrate 3.
就吸孔32而言,在卡盤16的中心部分中形成四個吸孔32,並且在周緣部分中形成十六個吸孔32(八個吸孔32×2個圓),所述十六個吸孔圍繞中央部分。所有吸孔32均具有相同的直徑。 With respect to the suction hole 32, four suction holes 32 are formed in the central portion of the chuck 16, and sixteen suction holes 32 (eight suction holes 32 × 2 circles) are formed in the peripheral portion, the sixteen The suction holes surround the central portion. All suction holes 32 have the same diameter.
當區域中的所有吸孔32的總橫截面面積是總孔面積(吸氣孔的總面積)時,吸孔32被形成為使得周緣部分中的總孔面積大於中央部分中的總孔面積,即,形成在第二區域中的吸氣孔的總面積大於形成在第一區域和第二區域的總和的區域中的吸氣孔的總面積的50%。因此,周緣部分中的每單位面積的總孔面積大於作為中央部分和周緣部分的總和的區域中的每單位面積的總孔面積。 When the total cross-sectional area of all the suction holes 32 in the region is the total hole area (the total area of the suction holes), the suction holes 32 are formed such that the total hole area in the peripheral portion is larger than the total hole area in the central portion, That is, the total area of the suction holes formed in the second region is larger than 50% of the total area of the suction holes formed in the region of the sum of the first region and the second region. Therefore, the total pore area per unit area in the peripheral portion is larger than the total pore area per unit area in the region as the sum of the central portion and the peripheral portion.
當藉由使用卡盤16(吸孔32以上述方式形成在所述 卡盤16中)藉由使用真空源33b經由管33排空空間35中的空氣時,周緣部分(吸孔32以更高的比率形成在所述周緣部分中)中的吸力大於中央部分中的吸力。 When formed in the above manner by using the chuck 16 (suction holes 32) In the chuck 16), when the air in the space 35 is evacuated via the tube 33 by using the vacuum source 33b, the suction force in the peripheral portion (the suction hole 32 is formed in the peripheral portion at a higher ratio) is larger than that in the central portion suction.
結果,即使在基板3的彎曲量較大並且在已經進行了基板3運送之後在基板3和唇形密封件31之間形成大間隙的情況中,也能夠即時封閉間隙,並且能夠防止發生空氣洩漏。較之在以特定的間距佈置具有相同形狀的吸孔並且基板具有相同的彎曲量的情況,能夠更好地校正基板3的彎曲。因此,能夠防止由於基板3變形(例如彎曲)而造成轉印的圖案發生變形。 As a result, even in the case where the amount of bending of the substrate 3 is large and a large gap is formed between the substrate 3 and the lip seal 31 after the substrate 3 has been transported, the gap can be closed immediately, and air leakage can be prevented. . The bending of the substrate 3 can be better corrected as compared with the case where the suction holes having the same shape are arranged at a specific pitch and the substrates have the same amount of bending. Therefore, it is possible to prevent the transferred pattern from being deformed due to deformation (for example, bending) of the substrate 3.
吸孔32中的至少一個可以形成在側表面39b和底部表面39c中的至少一個中。圖3圖解了示例性狀態,在所述示例性狀態中,吸孔32中的至少一個形成在側表面39b中。 At least one of the suction holes 32 may be formed in at least one of the side surface 39b and the bottom surface 39c. FIG. 3 illustrates an exemplary state in which at least one of the suction holes 32 is formed in the side surface 39b.
在基板保持表面和基板3相互接觸的狀態中,難以經由形成在基板保持表面中的吸孔32排空空氣。因此,可能存在這樣的情況,在所述情況中,將不能充分排空底部表面39c和基板3之間的空間中的空氣,並且不能充分校正基板3的彎曲。如果吸孔32中的至少一個形成在側表面39b和底部表面39c中的至少一個中,則能夠在吸引基板3的同時排空底部表面39c和基板3之間的空間中的空氣,使得能夠校正基板3的彎曲。 In a state where the substrate holding surface and the substrate 3 are in contact with each other, it is difficult to evacuate air via the suction holes 32 formed in the substrate holding surface. Therefore, there may be a case in which the air in the space between the bottom surface 39c and the substrate 3 will not be sufficiently evacuated, and the bending of the substrate 3 cannot be sufficiently corrected. If at least one of the suction holes 32 is formed in at least one of the side surface 39b and the bottom surface 39c, it is possible to evacuate the air in the space between the bottom surface 39c and the substrate 3 while attracting the substrate 3, so that correction can be made The bending of the substrate 3.
在吸孔32中的至少一個形成在側表面39b的情況中,沿著直立方向加工的孔的數量較少,並且因此,能夠 削減形成吸孔32所需的加工成本。 In the case where at least one of the suction holes 32 is formed in the side surface 39b, the number of holes processed in the upright direction is small, and therefore, The processing cost required to form the suction holes 32 is reduced.
第一實施例的保持裝置10不僅僅能夠吸引以凸出的方式向下彎曲成碗狀的基板而且還能夠吸引以凸出的方式向上彎曲成倒置碗狀的基板以及非對稱彎曲的基板,這些基板能夠被校正以便成為平面。 The holding device 10 of the first embodiment is capable of not only attracting a substrate that is bent downward into a bowl shape in a convex manner but also capable of attracting a substrate that is bent upward into an inverted bowl shape and an asymmetrically curved substrate in a convex manner. The substrate can be calibrated to become a flat surface.
在圖解了吸孔32的佈置方案的圖4中,中央部分可以設置成作為下述圖形的內部區域,所述圖形與基板保持表面的平面圖形的中心同心並且藉由減小平面圖形的尺寸2/3以上且4/5以下來獲得,並且周緣部分可以設置成作為中央部分和唇形密封件31之間的區域。 In Fig. 4 illustrating the arrangement of the suction holes 32, the central portion may be provided as an inner region of a pattern which is concentric with the center of the planar pattern of the substrate holding surface and by reducing the size of the planar pattern 2 It is obtained at /3 or more and 4/5 or less, and the peripheral portion may be provided as a region between the central portion and the lip seal 31.
在這種情況中,吸孔32的佈置方案滿足(周緣部分中的總孔面積/周緣部分的面積)>(中央部分和周緣部分的總區域中的總孔面積/中央部分和周緣部分的總區域的面積)的關係,並且周緣部分中的每單位面積的總孔面積大於作為中央部分和周緣部分的總和的區域中的每單位面積的總孔面積。換言之,滿足形成在周緣部分中的吸氣孔32的總面積與周緣部分的面積的比大於形成在包括中央部分加上周緣部分的總區域中的吸氣孔32的總面積與總區域的面積的比的關係。結果,能夠增大周緣部分(吸孔32以更高的比率形成在所述周緣部分中)中的吸力。 In this case, the arrangement of the suction holes 32 is satisfied (the total hole area in the peripheral portion / the area of the peripheral portion) > (the total hole area in the total area of the central portion and the peripheral portion / the total of the central portion and the peripheral portion) The relationship of the area of the area, and the total hole area per unit area in the peripheral portion is larger than the total hole area per unit area in the area as the sum of the central portion and the peripheral portion. In other words, the ratio of the total area of the suction holes 32 formed in the peripheral portion to the area of the peripheral portion is larger than the total area and the total area of the suction holes 32 formed in the total area including the central portion plus the peripheral portion. The relationship between the ratios of the areas. As a result, it is possible to increase the suction force in the peripheral portion (the suction hole 32 is formed in the peripheral portion at a higher ratio).
應注意的是“>”是表示左側運算式大於右側表式的不等號,並且“/”表示除號。例如,“(周緣部分中的總孔面積/周緣部分的面積)”表示用周緣部分中的總孔面積除以周緣部分的面積而獲得的數值。在本說明書中, 基板保持表面的平面圖形指的從基板3將被沿著直立方向運送到曝光設備1中的一側觀察基板保持表面時基板保持表面的輪廓形狀。 It should be noted that ">" is an inequality sign indicating that the left side expression is greater than the right side table, and "/" means a division number. For example, "(the total pore area in the peripheral portion / the area of the peripheral portion)" means a value obtained by dividing the total pore area in the peripheral portion by the area of the peripheral portion. In this specification, The planar pattern of the substrate holding surface refers to the contour shape of the substrate holding surface when the substrate holding surface is viewed from the side where the substrate 3 is to be conveyed in the upright direction to the exposure apparatus 1.
吸孔32的佈置方案不局限於第一實施例的佈置方案,而是可以進行多種修改。例如,如在圖5A中圖解的第一實施例的修改方案,兩個吸孔32可以形成在中央部分中,並且四個吸孔32可以以使得這些吸孔32彼此成一直線的方式形成在周緣部分中。 The arrangement of the suction holes 32 is not limited to the arrangement of the first embodiment, but various modifications can be made. For example, as in the modification of the first embodiment illustrated in FIG. 5A, two suction holes 32 may be formed in the central portion, and the four suction holes 32 may be formed at the periphery in such a manner that the suction holes 32 are in line with each other Part of it.
現在將描述第一實施例的示例。藉由使用圖5A中圖解的卡盤16來驗證抽吸效應,所述抽吸效應藉由以如下方式形成吸孔32而獲得,即,使得形成在卡盤16的周緣部分中的吸孔32的數量大於形成在卡盤16的中央部分中的吸孔32的數量。進行吸引基板3的操作,所述基板3具有碗狀的形狀並且以使得基板3的外周部分定位成在直立方向上高於基板3的中心1.7mm的方式向上彎曲。另外,如圖5B所示,作為比較示例,藉由使用卡盤50進行吸引基板的操作,所述基板的彎曲量與基板3的彎曲程度相同,所述卡盤50具有形成在其中央部分中的六個吸孔48和唇形密封件45,所述唇形密封件45沿著卡盤50的外周佈置。 An example of the first embodiment will now be described. The suction effect is verified by using the chuck 16 illustrated in FIG. 5A, which is obtained by forming the suction holes 32 in such a manner that the suction holes 32 formed in the peripheral portion of the chuck 16 are formed. The number is larger than the number of suction holes 32 formed in the central portion of the chuck 16. The operation of attracting the substrate 3 having a bowl shape and such that the outer peripheral portion of the substrate 3 is positioned to be curved upward in a straight cubic direction higher than the center of the substrate 3 by 1.7 mm is performed. In addition, as shown in FIG. 5B, as a comparative example, the operation of attracting the substrate is performed by using the chuck 50, the amount of bending of the substrate is the same as the degree of bending of the substrate 3, and the chuck 50 has a central portion formed therein. The six suction holes 48 and the lip seals 45 are disposed along the outer circumference of the chuck 50.
流量計佈置在閥34附近,並且使用流量計測量吸引基板3所需的流率(排氣的流率)。 The flow meter is disposed near the valve 34, and the flow rate (flow rate of the exhaust gas) required to attract the substrate 3 is measured using a flow meter.
結果,在使用圖5A中圖解的卡盤16的情況中需要2L/min的流率,而在使用圖5B圖解的卡盤50的情況中需 要20L/min的流率。在吸引彎曲至較大量的基板的情況中,卡盤16能夠較之卡盤50以相對較小的流率吸引基板。 As a result, a flow rate of 2 L/min is required in the case of using the chuck 16 illustrated in FIG. 5A, and in the case of using the chuck 50 illustrated in FIG. 5B A flow rate of 20 L/min is required. In the case of attracting a substrate that is bent to a relatively large amount, the chuck 16 can attract the substrate at a relatively small flow rate compared to the chuck 50.
從結果可知,發現的是,根據第一實施例的卡盤16的構造使得能夠採用具有低空氣排空性能的小尺寸的真空源33b。這具有減小真空源33b的安裝空間的大小並且削減真空源33b的製造成本的有利效果。 As is apparent from the results, it was found that the configuration of the chuck 16 according to the first embodiment makes it possible to employ a small-sized vacuum source 33b having low air evacuation performance. This has an advantageous effect of reducing the size of the installation space of the vacuum source 33b and reducing the manufacturing cost of the vacuum source 33b.
現在將描述第二實施例。與第一實施例的保持裝置10的不同之處在於吸孔37,各個吸孔37的尺寸與各個吸孔32的尺寸不同並且吸孔32和37的佈置方案也不同。 The second embodiment will now be described. The difference from the holding device 10 of the first embodiment is the suction holes 37, the size of each suction hole 37 is different from the size of each suction hole 32, and the arrangement of the suction holes 32 and 37 is also different.
圖6是當從正Z軸線方向觀察時根據第二實施例的保持裝置10的視圖。邊界38代表卡盤16的中央部分和卡盤16的周緣部分之間的邊界,並且中央部分是下述圖形的內部區域,所述圖形藉由減小基板保持表面的平面圖形的尺寸4/5獲得。在基板保持表面中,周緣部分是位於中央部分和唇形密封件31之間的區域。 Fig. 6 is a view of the holding device 10 according to the second embodiment when viewed from the direction of the positive Z axis. The boundary 38 represents the boundary between the central portion of the chuck 16 and the peripheral portion of the chuck 16, and the central portion is an inner region of a pattern by reducing the size of the planar pattern of the substrate holding surface by 4/5. obtain. In the substrate holding surface, the peripheral portion is a region between the central portion and the lip seal 31.
卡盤16具有形成在中央部分中的兩個吸孔32和形成在周緣部分中的四個吸孔37。形成在周緣部分中的吸孔37中的一個吸孔的孔面積是形成在中央部分中的吸孔32中的一個吸孔的孔面積的兩倍或者更多倍。吸孔32沿著Y軸線方向佈置,並且吸孔37沿著X軸線方向佈置。 The chuck 16 has two suction holes 32 formed in the center portion and four suction holes 37 formed in the peripheral portion. The area of the hole of one of the suction holes 37 formed in the peripheral portion is twice or more the area of the hole of one of the suction holes 32 formed in the central portion. The suction holes 32 are arranged along the Y-axis direction, and the suction holes 37 are arranged along the X-axis direction.
而且在第二實施例中,周緣部分中的每單位面積的總孔面積大於作為中央部分和周緣部分的總和的區域中的每單位面積的總孔面積。藉由以如下方式佈置吸孔32, 即,使得即使在中央部分是藉由減小基板保持表面的平面圖形的尺寸4/5獲得的圖形的內部區域的情況中也滿足上述關係,進一步增大了基板3的端部部分中的吸力。 Also in the second embodiment, the total pore area per unit area in the peripheral portion is larger than the total pore area per unit area in the region as the sum of the central portion and the peripheral portion. By arranging the suction holes 32 in the following manner, That is, the above relationship is satisfied even in the case where the central portion is the inner region of the pattern obtained by reducing the size 4/5 of the planar pattern of the substrate holding surface, further increasing the suction force in the end portion of the substrate 3. .
如在第一實施例中,與以特定的間距佈置具有相同尺寸的吸孔的情況相比,這有助於校正基板3的彎曲。因此,能夠防止因基板3的變形(例如彎曲)而導致轉印的圖案發生變形。另外,藉由佈置具有低排氣率的真空源33b,能夠減小真空源33b的安裝空間的大小並且能夠削減真空源33b的製造成本。 As in the first embodiment, this helps to correct the bending of the substrate 3 as compared with the case where the suction holes having the same size are arranged at a specific pitch. Therefore, deformation of the transferred pattern due to deformation (for example, bending) of the substrate 3 can be prevented. Further, by arranging the vacuum source 33b having a low exhaust rate, the size of the installation space of the vacuum source 33b can be reduced and the manufacturing cost of the vacuum source 33b can be reduced.
藉由增加形成在周緣部分中的吸孔37中的每一個吸孔的孔面積來減小形成在周緣部分中的吸孔37的數量。能夠減小形成在卡盤16中的、從卡盤16的中心延伸到吸孔37的管的數量,並且因此能夠削減加工成本。 The number of suction holes 37 formed in the peripheral portion is reduced by increasing the hole area of each of the suction holes 37 formed in the peripheral portion. The number of tubes formed in the chuck 16 extending from the center of the chuck 16 to the suction holes 37 can be reduced, and thus the processing cost can be reduced.
吸孔37被佈置成使得所有吸孔37(吸孔37中的至少三個)沒有如上文參照圖5A所描述的那樣彼此成一直線。這防止空間35中的負壓沿著一個軸向方向不均勻地分佈。 The suction holes 37 are arranged such that all of the suction holes 37 (at least three of the suction holes 37) are not aligned with each other as described above with reference to FIG. 5A. This prevents the negative pressure in the space 35 from being unevenly distributed in one axial direction.
在第一實施例和第二實施例二者中,即使在中央部分中沒有形成吸孔32的情況中(即使在周緣部分中的總孔面積是作為中央部分和周緣部分的總和的區域的100%的情況中),也能夠執行基板3的吸引。然而,至少一個吸孔32可以形成在中央部分中,原因在於如果沒有吸孔32形成在中央部分中,則由於基板3被校正以使其從端部部分開始變平,因此仍然存在彎曲的區域可能會將留在基板 3的中心處。 In both the first embodiment and the second embodiment, even in the case where the suction hole 32 is not formed in the central portion (even if the total hole area in the peripheral portion is 100 as the area of the sum of the central portion and the peripheral portion) In the case of %, the attraction of the substrate 3 can also be performed. However, at least one suction hole 32 may be formed in the central portion because if no suction hole 32 is formed in the central portion, since the substrate 3 is corrected so as to be flattened from the end portion, there is still a curved region. May stay on the substrate At the center of 3.
現在將描述第三實施例。圖7是當從正Z軸線方向觀察根據第三實施例的保持裝置10時的視圖。卡盤16的吸孔32具有相同的尺寸和相同的形狀並且形成為以特定的間距佈置。在圖7中,藉由減小基板保持表面的平面圖形的尺寸2/3獲得的圖形的內部區域是中央部分。然而,中央部分可以是藉由減小基板保持表面的平面圖形的尺寸2/3以上且4/5以下獲得的圖形的內部區域。 The third embodiment will now be described. Fig. 7 is a view when the holding device 10 according to the third embodiment is viewed from the positive Z-axis direction. The suction holes 32 of the chuck 16 have the same size and the same shape and are formed to be arranged at a specific pitch. In Fig. 7, the inner region of the pattern obtained by reducing the size 2/3 of the planar pattern of the substrate holding surface is the central portion. However, the central portion may be an inner region of a pattern obtained by reducing the size of the planar pattern of the substrate holding surface by 2/3 or more and 4/5 or less.
連接到屬於作為卡盤16的中央部分的第一區域的吸孔32的管和連接到屬於作為卡盤16的周緣部分的第二區域的吸孔32的管設置有閥(未示出),所述閥能夠基於逐個區域地開啟和封閉。控制單元55控制對應於中央區域的閥和對應於周緣區域的閥的開啟和關閉。控制單元55在空氣排空期間在預定時刻控制經由形成在中央部分中的吸孔32排空的空氣的流率和經由形成在周緣部分中的吸孔32排空的空氣的流率,使得滿足(經由形成在周緣部分中的吸孔32實施的空氣排空的排氣流率/周緣部分的面積)>(經由形成在中央部分和周緣部分的總區域中的吸孔32實施的空氣排空的排氣流率/中央部分和周緣部分的總區域的面積)的關係。換言之,滿足如下關係:藉由形成在周緣部分中的吸孔32實施的空氣排空的排氣流率與周緣部分的面積的比大於經由包括中央部分加上周緣部分的總區域中的吸氣孔32實施的空氣排空的排氣流率與總區域的面積的比。 A tube connected to the suction hole 32 belonging to the first region of the central portion of the chuck 16 and a tube connected to the suction hole 32 belonging to the second region as the peripheral portion of the chuck 16 are provided with a valve (not shown), The valve can be opened and closed on a zone by region basis. The control unit 55 controls the opening and closing of the valve corresponding to the central region and the valve corresponding to the peripheral region. The control unit 55 controls the flow rate of the air emptied via the suction holes 32 formed in the central portion and the flow rate of the air emptied via the suction holes 32 formed in the peripheral portion at a predetermined timing during the air evacuation, so that the satisfaction is satisfied. (Exhaust flow rate/area of the air venting via the suction holes 32 formed in the peripheral portion)> (Air evacuation via the suction holes 32 formed in the total area of the central portion and the peripheral portion) The relationship between the exhaust flow rate / the area of the central portion and the total area of the peripheral portion). In other words, the relationship is satisfied that the ratio of the exhaust flow rate of the air evacuated by the suction holes 32 formed in the peripheral portion to the area of the peripheral portion is larger than the suction in the total area including the central portion plus the peripheral portion The ratio of the exhaust flow rate of the air evacuation performed by the air holes 32 to the area of the total area.
例如,控制單元55藉由僅僅使用形成在中央部分中的吸孔32來吸引基板3,然後關閉連接到形成在中央部分中的吸孔32的管的閥,此後,藉由僅僅使用形成在周緣部分中的吸孔32來吸引基板3。由於控制單元55以這種方式實施控制,暫時僅僅經由形成在周緣部分中的吸孔32來實施空氣排空。以這種方式,能夠增大周緣部分中的吸力。另外,藉由採用具有低空氣排空性能的真空源33b,能夠減小真空源33b的安裝空間的大小並且削減真空源33b的製造成本。 For example, the control unit 55 attracts the substrate 3 by using only the suction holes 32 formed in the central portion, and then closes the valve connected to the tube of the suction hole 32 formed in the central portion, and thereafter, is formed only by the use at the periphery. The suction holes 32 in the portion attract the substrate 3. Since the control unit 55 performs the control in this manner, air evacuation is temporarily performed only via the suction holes 32 formed in the peripheral portion. In this way, the suction force in the peripheral portion can be increased. Further, by employing the vacuum source 33b having low air evacuation performance, the size of the installation space of the vacuum source 33b can be reduced and the manufacturing cost of the vacuum source 33b can be reduced.
只要能夠以如下方式控制第一區域中的排氣流率和第二區域中的排氣流率,即,使得在特定時間,周緣部分中的每單位面積的總排氣流率可以有時高於當經由所有吸氣孔32實施的空氣排空時的每單位面積的總排氣流率,便可以藉由調節對應於中央部分的閥打開程度和對應於周緣部分的閥的打開程度來分別執行第一區域中的排氣流率的調節和第二區域中的排氣流率的調節。 As long as the exhaust flow rate in the first region and the exhaust flow rate in the second region can be controlled in such a manner that the total exhaust flow rate per unit area in the peripheral portion can be sometimes high at a specific time The total exhaust flow rate per unit area when the air is evacuated through all the suction holes 32 can be adjusted by adjusting the degree of opening of the valve corresponding to the central portion and the degree of opening of the valve corresponding to the peripheral portion, respectively. The adjustment of the exhaust flow rate in the first zone and the adjustment of the exhaust flow rate in the second zone are performed.
作為另一個示例,卡盤16可以包括環狀突出部分43和44,所述環狀突出部分43和44如圖8A和8B所示沿著從卡盤16的中心朝向外側的方向以此順序形成在卡盤16上。在由突出部分43圍繞的區域40、由突出部分43和突出部分44圍繞的區域41以及位於突出部分44外側的區域42中的每一個區域中形成有八個吸孔32。 As another example, the chuck 16 may include annular projecting portions 43 and 44 which are formed in this order along the direction from the center toward the outer side of the chuck 16 as shown in Figs. 8A and 8B. On the chuck 16. Eight suction holes 32 are formed in each of the region 40 surrounded by the protruding portion 43, the region 41 surrounded by the protruding portion 43 and the protruding portion 44, and the region 42 located outside the protruding portion 44.
藉由將閥45切換到佈置有真空源的一側而藉由定位在區域40中的吸孔32實施空氣排空。藉由將閥46切換 到佈置有真空源的一側而藉由定位在區域41中的吸孔32實施空氣排空。藉由將閥47切換到佈置有真空源的一側而藉由定位在區域42中的吸孔32來實施空氣排空。閥45、46和47連接到控制單元55,並且控制單元55根據預定時刻控制將被用來吸引基板3的吸孔32的切換。 Air evacuation is performed by the suction holes 32 positioned in the region 40 by switching the valve 45 to the side where the vacuum source is disposed. By switching valve 46 Air evacuation is performed by a suction hole 32 positioned in the region 41 to the side where the vacuum source is disposed. Air evacuation is performed by switching the valve 47 to the side where the vacuum source is disposed, by the suction holes 32 positioned in the region 42. The valves 45, 46 and 47 are connected to the control unit 55, and the control unit 55 controls the switching of the suction holes 32 to be used to attract the substrate 3 according to a predetermined timing.
已經在上文描述的第三實施例適於這樣的情況,在所述情況中,唇形密封件31的端部部分的高度不能設置成相對於基板保持表面的高度非常高,以便防止將基板3運送到卡盤16的運送手(未示出)與唇形密封件31接觸。換言之,第三實施例適於這樣的情況,在所述情況中,銷17和唇形密封件31的端部部分之間的高度差在將基板3運送到曝光設備1中或者運送出曝光設備1時變小。 The third embodiment which has been described above is suitable for the case where the height of the end portion of the lip seal 31 cannot be set to be very high with respect to the height of the substrate holding surface in order to prevent the substrate from being removed 3 A transport hand (not shown) transported to the chuck 16 is in contact with the lip seal 31. In other words, the third embodiment is suitable for the case in which the difference in height between the pin 17 and the end portion of the lip seal 31 is to transport the substrate 3 into the exposure apparatus 1 or to carry out the exposure apparatus 1 hour becomes smaller.
在唇形密封件31的高度足夠高的情況中,唇形密封件31易於與基板3的邊緣的彎曲部分接觸。然而,在唇形密封件31的高度小的情況中,存在這樣的可能性,即,取決於基板3的彎曲量唇形密封件31將不能與基板3接觸,使得不能充分地實施空間35中的空氣的排空。 In the case where the height of the lip seal 31 is sufficiently high, the lip seal 31 is easily brought into contact with the curved portion of the edge of the substrate 3. However, in the case where the height of the lip seal 31 is small, there is a possibility that the lip seal 31 will not be in contact with the substrate 3 depending on the amount of bending of the substrate 3, so that the space 35 cannot be sufficiently implemented. Emptying of the air.
藉由以閥45、46和47的順序切換閥45、46和47,基板3能夠以使得唇形密封件31和基板3的端部之間的距離逐漸減小的方式被吸引。在唇形密封件31和基板3已經相互接觸之後,區域42中的吸孔32的每單位面積的排氣流率被控制成大於區域40中的吸孔32的每單位面積的排氣流率和區域41中的吸孔32的每單位面積的排氣流率。 By switching the valves 45, 46 and 47 in the order of the valves 45, 46 and 47, the substrate 3 can be attracted in such a manner that the distance between the lip seal 31 and the end of the substrate 3 is gradually reduced. After the lip seal 31 and the substrate 3 have been in contact with each other, the exhaust flow rate per unit area of the suction holes 32 in the region 42 is controlled to be larger than the exhaust flow rate per unit area of the suction holes 32 in the region 40. And the exhaust flow rate per unit area of the suction holes 32 in the region 41.
利用這種構造,能夠防止唇形密封件31和運送手之間接觸,並且另外,能夠校正基板3的彎曲。 With this configuration, it is possible to prevent contact between the lip seal 31 and the transporting hand, and in addition, it is possible to correct the bending of the substrate 3.
在第一至第三實施例中,可以在實施基板3的運送的時段期間排空閥34和真空源33b之間的空間中的空氣。在這種情況中,能夠在開始排空操作時在一個行程中排空空間35中的空氣,並且即使真空源33b具有低排氣流率也能夠容易地實施基板3的吸引。 In the first to third embodiments, the air in the space between the valve 34 and the vacuum source 33b can be evacuated during the period in which the conveyance of the substrate 3 is performed. In this case, the air in the space 35 can be evacuated in one stroke at the start of the emptying operation, and the attraction of the substrate 3 can be easily performed even if the vacuum source 33b has a low exhaust flow rate.
如第三實施例中那樣控制吸孔32的釋放順序的實施例可以與卡盤16組合,在所述卡盤16中吸孔32被形成為以根據上述實施例中的一個實施例的方式佈置。 An embodiment of controlling the release sequence of the suction holes 32 as in the third embodiment may be combined with a chuck 16 in which the suction holes 32 are formed to be arranged in accordance with one of the above embodiments. .
吸孔32中的每一個的形狀均不局限於圓形而是可以為橢圓形或者四邊形。唇形密封件31可以佈置成使得唇形密封件31的端部定位成較之切口區域(例如被形成作為標準的凹口或者定向平面)位於更內部。藉由致使曝光不直接照射到唇形密封件31中可以防止唇形密封件31退化。 The shape of each of the suction holes 32 is not limited to a circular shape but may be an elliptical shape or a quadrangular shape. The lip seal 31 can be arranged such that the end of the lip seal 31 is positioned more internally than the slit region (eg, formed as a standard notch or orientation plane). The lip seal 31 can be prevented from deteriorating by causing the exposure not to directly illuminate the lip seal 31.
就吸孔32的佈置方案而言,吸孔32可以至少形成為相對於通過基板保持表面的中心的一條軸線對稱。在這種情況中,能夠防止局部形成因施加到基板3上的吸力的分佈不均勻而不能被校正為平面的區域。 In terms of the arrangement of the suction holes 32, the suction holes 32 may be formed at least symmetrically with respect to an axis passing through the center of the substrate holding surface. In this case, it is possible to prevent the local formation of the region which cannot be corrected to a plane due to the uneven distribution of the suction force applied to the substrate 3.
與卡盤16一體地形成的多個銷(未示出)可以佈置在基板保持表面上以便減小基板保持表面和基板3之間的 接觸面積。藉由減小基板保持表面和基板3之間的接觸面積,能夠防止保持表面上的灰塵附著在基板3上。 A plurality of pins (not shown) integrally formed with the chuck 16 may be disposed on the substrate holding surface to reduce the space between the substrate holding surface and the substrate 3. Contact area. By reducing the contact area between the substrate holding surface and the substrate 3, it is possible to prevent dust on the holding surface from adhering to the substrate 3.
另外,在唇形密封件31密封空間的能力不足的情況中,與卡盤16形成為一體的突出結構(未示出)可以形成在基板保持表面的比唇形密封件31位於更內側的部分上。由於突出結構輔助界定了空間,因此基板3的中央部分可以容易地被校正成為平面。然而,用於藉由排空環狀突出結構外側空間中的空氣來校正基板3的彎曲的吸孔32需要形成在位於環狀突出結構外部的區域中,所述區域定位成比唇形密封件31位於更內側。 In addition, in the case where the ability of the lip seal 31 to seal the space is insufficient, a protruding structure (not shown) formed integrally with the chuck 16 may be formed at a portion of the substrate holding surface which is located further inside than the lip seal 31 on. Since the protruding structure assists in defining the space, the central portion of the substrate 3 can be easily corrected to a plane. However, the suction hole 32 for correcting the curvature of the substrate 3 by evacuating the air in the outer space of the annular protruding structure needs to be formed in a region outside the annular protruding structure, the region being positioned to be larger than the lip seal 31 is located on the inside.
然而,即使在形成上述銷和環狀突出結構的情況中,考慮的也是在基板保持表面的區域、中央部分的區域和周緣部分的區域中,不要由於銷和環狀突出結構而使得表面面積增加。 However, even in the case of forming the above-described pin and annular projecting structure, it is considered that in the region of the substrate holding surface, the region of the central portion, and the region of the peripheral portion, the surface area is not increased due to the pin and the annular projecting structure. .
卡盤16和基板保持表面的平面圖形的每一個的形狀並不局限於圓形。例如,在基板保持表面具有四邊形的情況中,中央部分是類似的圖形,所述類似的圖形與四邊形的中心同中心並且藉由減小四邊形形狀的尺寸2/3以上且4/5以下獲得。 The shape of each of the flat patterns of the chuck 16 and the substrate holding surface is not limited to a circular shape. For example, in the case where the substrate holding surface has a quadrangular shape, the central portion is a similar pattern which is concentric with the center of the quadrilateral and is obtained by reducing the size of the quadrilateral shape by 2/3 or more and 4/5 or less.
唇形密封件31不需要如在第一至第三實施例中那樣形成在水平平面中。例如,唇形密封件31可以固定到卡盤16的側表面。 The lip seal 31 does not need to be formed in a horizontal plane as in the first to third embodiments. For example, the lip seal 31 may be fixed to the side surface of the chuck 16.
唇形密封件31可以具有這樣的形狀,在所述形狀中,唇形密封件31的端部面向卡盤16的中心(圖9)。 在這種情況中,唇形密封件31易於在吸引基板3的操作過程中朝向中央部分變形,並且由此,基板3更易於緊密接觸唇形密封件31,使得有利於校正基板3的周緣的彎曲。 The lip seal 31 may have a shape in which the end of the lip seal 31 faces the center of the chuck 16 (Fig. 9). In this case, the lip seal 31 is easily deformed toward the central portion during the operation of attracting the substrate 3, and thus, the substrate 3 is more likely to closely contact the lip seal 31, so that it is advantageous to correct the circumference of the substrate 3. bending.
替代地,唇形密封件31的橫截面形狀可以是手風琴狀(圖10)。唇形密封件31可以具有低剛性,原因在於,在這種情況中,唇形密封件31和基板3之間的接觸程度能夠提高。然而,因製造唇形密封件31的工藝上的限制,難以將唇形密封件31形成為使其具有不大於預定厚度的厚度。因此,如果藉由使用具有手風琴狀的唇形密封件31而使得唇形密封件31與基板3接觸的一部分的剛性減小,則基板3易於緊密接觸唇形密封件31,並且有利於校正基板3的周緣的彎曲。這種構造尤其適於吸引相對於通過基板3的中心的一條軸線對稱彎曲的基板3以及具有非對稱形狀的基板3的情況。 Alternatively, the cross-sectional shape of the lip seal 31 may be accordion-like (Fig. 10). The lip seal 31 can have low rigidity because, in this case, the degree of contact between the lip seal 31 and the substrate 3 can be improved. However, due to the technical limitations of manufacturing the lip seal 31, it is difficult to form the lip seal 31 to have a thickness not greater than a predetermined thickness. Therefore, if the rigidity of a portion where the lip seal 31 is in contact with the substrate 3 is reduced by using the lip seal 31 having an accordion shape, the substrate 3 easily comes into close contact with the lip seal 31, and is advantageous for correcting the substrate. The curvature of the circumference of 3. This configuration is particularly suitable for the case of attracting the substrate 3 which is symmetrically curved with respect to one axis passing through the center of the substrate 3 and the substrate 3 having an asymmetrical shape.
在包括唇形密封件31的保持裝置10中,由於製造唇形密封件31的工藝中出現的個體差異或安裝誤差,在吸引基板3的操作之前和之後基板3可有時沿著預定方向移動大約10μm至大約1,000μm。在這種情況中,藉由在開始曝光之前使用檢測系統14來測量基板3的位置偏移,並且藉由包括在控制單元18或類似物中的操作電路來計算校正量。然後,平台7和13運動以便被針對校正量掃描。這能夠減小因唇形密封件31而導致的基板3位置偏移並且防止重疊精度退化。 In the holding device 10 including the lip seal 31, the substrate 3 may sometimes move in a predetermined direction before and after the operation of attracting the substrate 3 due to individual differences or mounting errors occurring in the process of manufacturing the lip seal 31 It is about 10 μm to about 1,000 μm. In this case, the positional shift of the substrate 3 is measured by using the detecting system 14 before starting the exposure, and the amount of correction is calculated by an operation circuit included in the control unit 18 or the like. The platforms 7 and 13 are then moved to be scanned for the amount of correction. This can reduce the positional displacement of the substrate 3 due to the lip seal 31 and prevent the deterioration of the overlay accuracy.
唇形密封件31的角度並不局限於圖2A中示出的角度並且可以在0度至180度的範圍內適當地變化。如果鑒於難以校正基板3的比基板3和唇形密封件31的接觸點定位在更朝向設置有基板3的外周的一側的部分以使該部分成平面,唇形密封件31的角度被設定成較小,則基板3和唇形密封件31易於相互緊密接觸。 The angle of the lip seal 31 is not limited to the angle shown in FIG. 2A and may be appropriately changed within a range of 0 to 180 degrees. If the portion of the substrate 3 that is more difficult to correct than the substrate 3 and the lip seal 31 is positioned closer to the side on which the outer circumference of the substrate 3 is provided to planarize the portion, the angle of the lip seal 31 is set. In the smaller case, the substrate 3 and the lip seal 31 are easily brought into close contact with each other.
在圖4中,唇形密封件31直接固定到卡盤16。然而,藉由使用其它部件藉由將唇形密封件31固定在合適位置中可以有助於更換唇形密封件31。唇形密封件31可以具有這樣的構造,在所述構造中,可以藉由將唇形密封件31分成包括與基板3接觸的端部部分和其它部分來單獨更換唇形密封件31的已經磨損的端部部分。 In FIG. 4, the lip seal 31 is directly secured to the chuck 16. However, it may be helpful to replace the lip seal 31 by using the other components by securing the lip seal 31 in place. The lip seal 31 may have a configuration in which the worn seal 31 can be individually worn by dividing the lip seal 31 into an end portion and other portions that are in contact with the substrate 3. End part.
儘管在上述實施例中已經描述了在實施曝光處理之後將基板3運送出曝光設備1時藉由切換閥34實施空氣釋放操作的情況,但是未連接到真空源33b而是連接到大氣空間的小孔可以獨立於吸孔32形成,以便使得空氣進入到空間35中。 Although the case where the air release operation is performed by the switching valve 34 when the substrate 3 is carried out of the exposure apparatus 1 after performing the exposure processing has been described in the above embodiment, it is not connected to the vacuum source 33b but is connected to the small space of the atmosphere. The holes may be formed independently of the suction holes 32 to allow air to enter the space 35.
從根據本發明的微影設備照射到基板3上的光並不局限於i-線(波長為365nm)而可以是處於遠紫外線區域中的光,例如KrF光(波長為248nm)或者ArF光(波長為193nm),或者可以是g-線(波長為436nm),其是處於可見光區域中的光。 The light irradiated onto the substrate 3 from the lithography apparatus according to the present invention is not limited to the i-line (wavelength: 365 nm) but may be light in the far ultraviolet region, such as KrF light (wavelength: 248 nm) or ArF light ( The wavelength is 193 nm), or may be a g-line (wavelength of 436 nm), which is light in the visible region.
另外,根據本發明的微影設備並不局限於曝光設備。本發明可以應用於將帶電粒子束照射到基板上並且在基板 上形成潛像圖案的設備或藉由壓印方法在基板上形成圖案的設備。 Further, the lithography apparatus according to the present invention is not limited to the exposure apparatus. The invention can be applied to irradiate a charged particle beam onto a substrate and on the substrate A device on which a latent image pattern is formed or a device that forms a pattern on a substrate by an imprint method.
根據本發明的實施例的用於製造物品(半導體積體電路元件、液晶顯示元件、攝像元件、磁頭、可重複錄寫光碟片[CD-RW]、光學元件、光遮罩或類似物)的方法包括藉由使用微影設備使得基板(晶片、玻璃板或類似物)曝光以在基板上形成圖案的步驟和在已經曝光的基板上實施蝕刻操作以及離子植入操作中的至少一個的步驟。所述方法還可以包括其它眾所周知的處理步驟(顯影、氧化、成膜、汽相沉積、展平、抗蝕劑分離、切割,結合、封裝等)。 An article for manufacturing an article (a semiconductor integrated circuit element, a liquid crystal display element, an image pickup element, a magnetic head, a reproducible recording optical disc [CD-RW], an optical element, a light mask, or the like) according to an embodiment of the present invention. The method includes the steps of exposing a substrate (wafer, glass plate or the like) to form a pattern on the substrate by using a lithography apparatus and performing at least one of an etching operation and an ion implantation operation on the already exposed substrate. The method may also include other well known processing steps (development, oxidation, film formation, vapor deposition, flattening, resist separation, cutting, bonding, encapsulation, etc.).
儘管已經參照示例性實施例描述了本發明,但是應當理解的是本發明並不局限於公開的示例性實施例。給予所附請求項的範圍廣泛的理解,以便涵蓋所有修改方案和等效結構以及功能。 While the invention has been described with reference to exemplary embodiments thereof, it is understood that the invention is not limited to the disclosed exemplary embodiments. A broad understanding of the appended claims is provided to cover all modifications and equivalent structures and functions.
16‧‧‧卡盤(保持構件) 16‧‧‧ chuck (holding member)
17‧‧‧銷 17‧‧ ‧ sales
31‧‧‧唇形密封件(密封構件) 31‧‧‧Lip seal (sealing member)
32‧‧‧吸孔(吸氣孔) 32‧‧‧ suction hole (suction hole)
36‧‧‧銷孔 36‧‧ ‧ pinhole
38‧‧‧邊界 38‧‧‧ border
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WO2017054991A1 (en) | 2015-09-28 | 2017-04-06 | Asml Netherlands B.V. | A substrate holder, a lithographic apparatus and method of manufacturing devices |
JP2017211604A (en) * | 2016-05-27 | 2017-11-30 | 株式会社大日本科研 | Substrate sucking retainer and exposure device |
JP6894034B2 (en) * | 2016-07-25 | 2021-06-23 | 株式会社アドテックエンジニアリング | Work suction holding method, work stage and exposure equipment |
JP6774714B2 (en) * | 2016-07-25 | 2020-10-28 | 株式会社アドテックエンジニアリング | Work stage and exposure equipment |
JP6978840B2 (en) * | 2017-02-28 | 2021-12-08 | 株式会社Screenホールディングス | Board processing equipment and board holding equipment |
JP7007816B2 (en) * | 2017-06-08 | 2022-01-25 | 株式会社ディスコ | Chuck table |
JP6894772B2 (en) * | 2017-06-14 | 2021-06-30 | 日本特殊陶業株式会社 | Vacuum chuck |
JP7239388B2 (en) * | 2019-05-09 | 2023-03-14 | 株式会社アドテックエンジニアリング | Direct exposure system |
JP7368263B2 (en) * | 2020-02-14 | 2023-10-24 | 株式会社Screenホールディングス | Substrate processing equipment and substrate processing method |
JP7537926B2 (en) | 2020-07-09 | 2024-08-21 | 株式会社ディスコ | Chuck table for suction holding of wafer, and method for half-cutting wafer |
JP6844804B1 (en) * | 2020-11-25 | 2021-03-17 | 株式会社ブイ・テクノロジー | Exposure device and exposure method |
US20220319903A1 (en) * | 2021-03-31 | 2022-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for substrate handling |
CN114603200B (en) * | 2022-05-12 | 2022-10-11 | 四川精诚致远门窗工程有限公司 | Cutting device for door and window aluminum profiles |
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CN105652601B (en) | 2019-06-14 |
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