JP6711661B2 - Holding apparatus, holding method, lithographic apparatus, and article manufacturing method - Google Patents

Holding apparatus, holding method, lithographic apparatus, and article manufacturing method Download PDF

Info

Publication number
JP6711661B2
JP6711661B2 JP2016061982A JP2016061982A JP6711661B2 JP 6711661 B2 JP6711661 B2 JP 6711661B2 JP 2016061982 A JP2016061982 A JP 2016061982A JP 2016061982 A JP2016061982 A JP 2016061982A JP 6711661 B2 JP6711661 B2 JP 6711661B2
Authority
JP
Japan
Prior art keywords
substrate
adsorption
suction
regions
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016061982A
Other languages
Japanese (ja)
Other versions
JP2017175070A (en
Inventor
健士 鈴木
健士 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016061982A priority Critical patent/JP6711661B2/en
Publication of JP2017175070A publication Critical patent/JP2017175070A/en
Application granted granted Critical
Publication of JP6711661B2 publication Critical patent/JP6711661B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

本発明は、保持装置、保持方法、リソグラフィ装置、および物品の製造方法に関する。 The present invention relates to a holding device, a holding method, a lithographic apparatus, and a method for manufacturing an article.

半導体デバイス等を製造するリソグラフィ装置に用いられる基板の保持に際し、反りや変形が大きい基板を良好な平坦度で保持する技術が要求されている。基板を保持する方法として、基板の裏面を真空吸着する方法がある。この方法では、基板の反り等により吸着エアが漏れ、十分に吸着できない場合がある。この問題に対し、吸着領域を分割して、分割した吸着領域による吸着タイミングを調整する技術がある(特許文献1および2)。 When holding a substrate used in a lithographic apparatus for manufacturing a semiconductor device or the like, there is a demand for a technique for holding a substrate that is largely warped or deformed with good flatness. As a method of holding the substrate, there is a method of vacuum suctioning the back surface of the substrate. In this method, the suction air may leak due to the warp of the substrate or the like and the suction may not be sufficiently performed. To solve this problem, there is a technique of dividing the suction area and adjusting the suction timing by the divided suction areas (Patent Documents 1 and 2).

特開2015−38982号公報JP, 2015-38982, A 特開平11−067882号公報JP, 11-067882, A

しかしながら、特許文献1の技術では、基板の平坦度を計測しながら吸着タイミングを調整しており、特許文献2の技術では、基板中央から外へ放射状に吸着している。前者は、平坦度を計測する追加的な構成が必要となり、後者は、複雑な反りを有する基板への対応が困難となりうる。 However, in the technique of Patent Document 1, the suction timing is adjusted while measuring the flatness of the substrate, and in the technique of Patent Document 2, the substrate is radially attracted from the center. The former requires an additional configuration for measuring flatness, and the latter may be difficult to deal with a substrate having a complicated warp.

本発明は、例えば、良好な平坦度で基板を保持するために有利な保持装置を提供することを目的とする。 The present invention aims to provide a holding device that is advantageous for holding a substrate with good flatness, for example.

上記課題を解決するために、本発明は、基板を真空吸着して保持する保持装置であって、複数の吸着領域を有する第1吸着部と、複数の吸着領域を有する第2吸着部と、基板を第1吸着部により吸着させたときの圧力に基づいて、第2吸着部における複数の吸着領域による基板の吸着をる順序を決定し、順序に従い第2吸着部における複数吸着領域の吸着を開始して、基板を第2吸着部により吸着させる制御部と、を有する、ことを特徴とする。 In order to solve the above problems, the present invention is a holding device for holding a substrate by vacuum suction, the first suction unit having a plurality of suction regions, the second suction unit having a plurality of suction regions , based on the pressure when adsorbed by the first adsorbing portion board, the second to determine the order in which to start the suction of the substrate by a plurality of retaining regions in the adsorption unit, the second adsorption unit follow the order in start the plurality of adsorption of the adsorption region, to have a, and a control unit for adsorbing the substrate by the second adsorption unit, characterized in that.

本発明によれば、例えば、良好な平坦度で基板を保持するために有利な保持装置を提供することができる。 According to the present invention, for example, it is possible to provide a holding device that is advantageous for holding a substrate with good flatness.

第1実施形態に係る保持装置を備えた露光装置の概略図である。It is a schematic diagram of an exposure apparatus provided with a holding device concerning a 1st embodiment. 吸着部を上方から見た図である。It is the figure which looked at the adsorption part from the upper part. 図2(A)の吸着部を含む保持装置の全体を示す図である。It is a figure which shows the whole holding|maintenance apparatus containing the adsorption|suction part of FIG. 2(A). 下反りの基板が吸着部に搬入された状態を示す図である。It is a figure which shows the state in which the board|substrate of the warp was carried in to the adsorption|suction part. 上反りの基板が吸着部に搬入された状態を示す図である。It is a figure which shows the state in which the board|substrate of the warp was carried in to the adsorption|suction part. 第1実施形態に係る真空吸着方法のフローチャートである。3 is a flowchart of a vacuum suction method according to the first embodiment.

以下、本発明を実施するための形態について図面などを参照して説明する。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

(第1実施形態)
図1は本発明の第1実施形態に係る保持装置を備えた露光装置の概略図である。当該保持装置は、他のリソグラフィ装置(例えばインプリント装置)へ適用することもできるが本実施形態では露光装置への適用を例に説明する。本実施形態に係る保持装置を備えた露光装置は、光源110と、照明光学系120と、投影光学系130と、ステージ140と、制御部150と、を含む。また、本実施形態に係る保持装置は、吸着部160と、吸着制御部170と、を含む。なお、投影光学系130の光軸をZ軸とし、それに垂直な平面をXY平面とする。
(First embodiment)
FIG. 1 is a schematic view of an exposure apparatus including a holding device according to the first embodiment of the present invention. The holding apparatus can be applied to other lithographic apparatus (for example, imprint apparatus), but in the present embodiment, application to an exposure apparatus will be described as an example. The exposure apparatus including the holding device according to this embodiment includes a light source 110, an illumination optical system 120, a projection optical system 130, a stage 140, and a control unit 150. In addition, the holding device according to the present embodiment includes a suction unit 160 and a suction control unit 170. The optical axis of the projection optical system 130 is the Z axis, and the plane perpendicular to the Z axis is the XY plane.

光源110は、複数の波長帯域の光を露光光として出力する。照明光学系120は、遮光板121と、ハーフミラー122と、フォトセンサ123と、ミラー124と、不図示の整形光学系と、不図示のオプティカルインテグレータと、を含む。光源110より射出した光は、照明光学系120の整形光学系を介して所定のビーム形状に整形され、整形されたビームはオプティカルインテグレータに入射する。オプティカルインテグレータは、レチクル(原版)Rを均一な照度分布で照明する多数の2次光源を形成する。レチクルRは、マスクとも呼ばれ、その表面には焼き付けを行う半導体デバイスの回路パターンが形成されている。遮光板121は、照明光学系120の光路上に配置され、レチクルR上に任意の照明域を形成する。ハーフミラー122は、照明光学系120の光路上に配置され、レチクルRを照明する露光光の一部を反射して取り出す。フォトセンサ123は、ハーフミラー122の反射光の光路上に配置され、露光光の強度(露光エネルギー)に対応した信号を照明光学系制御部151に出力する。照明光学系制御部151は、当該出力に基づいて遮光板121等を制御する。 The light source 110 outputs light in a plurality of wavelength bands as exposure light. The illumination optical system 120 includes a light shielding plate 121, a half mirror 122, a photo sensor 123, a mirror 124, a shaping optical system (not shown), and an optical integrator (not shown). The light emitted from the light source 110 is shaped into a predetermined beam shape via the shaping optical system of the illumination optical system 120, and the shaped beam is incident on the optical integrator. The optical integrator forms a large number of secondary light sources that illuminate the reticle (original plate) R with a uniform illuminance distribution. The reticle R is also called a mask and has a circuit pattern of a semiconductor device to be printed on its surface. The light blocking plate 121 is arranged on the optical path of the illumination optical system 120, and forms an arbitrary illumination area on the reticle R. The half mirror 122 is arranged on the optical path of the illumination optical system 120, and reflects and extracts a part of the exposure light that illuminates the reticle R. The photo sensor 123 is arranged on the optical path of the reflected light of the half mirror 122, and outputs a signal corresponding to the intensity (exposure energy) of the exposure light to the illumination optical system controller 151. The illumination optical system controller 151 controls the light blocking plate 121 and the like based on the output.

投影光学系130は、屈折式またはカタディオプトリック式などであり、レチクルRの回路パターンを倍率β(例えばβ=1/2)で縮小し、フォトレジストが塗布された基板(ウエハ)W上のショット領域に結像投影する。投影光学系130は、光学素子131と、開口絞り132と、を含む。光学素子131は、駆動部101により投影光学系130の光軸上を移動する。これにより、投影光学系130の諸収差の増大を抑制しつつ、投影倍率を良好にさせ歪曲誤差を減らすことができる。開口絞り132は、投影光学系130の瞳面(レチクルRに対するフーリエ変換面)上に配置される。その形状は、開口部がほぼ円形であり、駆動部102により直径が制御される。駆動部101および102は、投影光学系制御部153により制御される。 The projection optical system 130 is of a refraction type or catadioptric type, and reduces the circuit pattern of the reticle R by a magnification β (for example, β=1/2), and on a substrate (wafer) W coated with a photoresist. The image is projected onto the shot area. The projection optical system 130 includes an optical element 131 and an aperture stop 132. The optical element 131 moves on the optical axis of the projection optical system 130 by the driving unit 101. This makes it possible to improve the projection magnification and reduce distortion errors while suppressing an increase in various aberrations of the projection optical system 130. The aperture stop 132 is arranged on the pupil plane (Fourier transform plane for the reticle R) of the projection optical system 130. The shape is such that the opening is substantially circular, and the diameter is controlled by the driving unit 102. The drive units 101 and 102 are controlled by the projection optical system control unit 153.

ステージ140は、駆動部103により、6自由度に関して制御され、基板Wの位置決めを行いうる。ここで、6自由度は、XYZ座標系の各軸に沿った並進自由度と、各軸の周りの回転自由度とを含む。ステージ140のXY平面内での位置は、ステージ140に固定された移動鏡141までの距離をレーザ干渉計142で計測することで計測される。ステージ140と基板Wとの位置関係は、アライメント計測系104により計測される。基板Wのフォーカスずれは、投光光学系105および検出光学系106を含むフォーカス面検出部により計測される。投光光学系105は、基板W上のフォトレジストを感光させない非露光光から成る複数個の光束を投光し、その光束は基板W上に各々集光されて反射される。基板W上で反射された光束は、検出光学系106に入射する。検出光学系106内には各反射光束に対応させて複数個の位置検出用の受光素子が配置されている。各受光素子の受光面と基板W上での各光束の反射点が結像光学系によりほぼ共役となるように構成されている。フォーカスずれは、検出光学系106内の受光素子上の入射光束の位置ずれとして計測される。駆動部103は、各計測結果をもとにステージ制御部154により制御される。駆動部101〜103は、モーター等の駆動手段である。 The stage 140 is controlled by the driving unit 103 with respect to 6 degrees of freedom, and can position the substrate W. Here, the six degrees of freedom include translational degrees of freedom along each axis of the XYZ coordinate system and rotational degrees of freedom around each axis. The position of the stage 140 in the XY plane is measured by measuring the distance to the movable mirror 141 fixed to the stage 140 with the laser interferometer 142. The positional relationship between the stage 140 and the substrate W is measured by the alignment measurement system 104. The focus shift of the substrate W is measured by the focus surface detection unit including the projection optical system 105 and the detection optical system 106. The light projecting optical system 105 projects a plurality of light fluxes of non-exposure light that does not expose the photoresist on the substrate W, and the light fluxes are condensed and reflected on the substrate W, respectively. The light flux reflected on the substrate W enters the detection optical system 106. In the detection optical system 106, a plurality of light receiving elements for position detection are arranged corresponding to each reflected light beam. The light receiving surface of each light receiving element and the reflection point of each light beam on the substrate W are configured to be substantially conjugate by the imaging optical system. The focus shift is measured as a position shift of the incident light beam on the light receiving element in the detection optical system 106. The drive unit 103 is controlled by the stage control unit 154 based on each measurement result. The drive units 101 to 103 are drive means such as motors.

吸着部160は、吸着制御部170による制御のもと、基板Wをステージ140に真空吸着保持する。制御部150は、照明光学系制御部151、投影光学系制御部153、ステージ制御部154および吸着制御部170を統括的に制御する。 The suction unit 160 holds the substrate W on the stage 140 by vacuum suction under the control of the suction control unit 170. The control unit 150 centrally controls the illumination optical system control unit 151, the projection optical system control unit 153, the stage control unit 154, and the suction control unit 170.

図2(A)および(B)は、2種類の吸着部160をそれぞれ上方から見た図である。図2(A)は、上反りまたは下反りの基板を吸着するのに適する。ここで、上反りの基板とは、基板表面において、XY平面内のどの方向からみても光軸方向(Z方向)の座標が最大となる点がある基板である。また、下反りの基板とは、前記座標が最小となる点がある基板である。図2(B)は、鞍反りの基板を吸着するのに適する。ここで、鞍反りの基板とは、基板表面において、XY平面内のある方向からみると光軸方向(Z方向)の座標が最大となり、他の方向からみると光軸方向(Z方向)の座標が最小となる、所謂鞍点がある基板である。図2(A)に示す吸着部160は、境界21〜23で区分された真空吸着領域11〜13と、真空吸着領域11〜13で吸入したエアを排出する排出口31〜33と、ウエハ受け渡しピン昇降口41〜43を備える。真空吸着領域は、同心円状に分割されている。図2(B)に示す吸着部160は、境界24で区分された真空吸着領域11〜16と、真空吸着領域11〜16で吸入したエアを排出する排出口31〜36と、ウエハ受け渡しピン昇降口41〜43を備える。真空吸着領域は放射状に分割されている。ウエハ受け渡しピン昇降口41〜43は、不図示の基板搬送ハンドと基板Wの受け渡しをするときに図3で示すウエハ受け渡しピン107を昇降するための開口部である。基板搬送ハンドは、ウエハ受け渡しピン昇降口41〜43から上昇したウエハ受け渡しピン107の上に基板Wを置く。基板搬送ハンドが退避した後、ウエハ受け渡しピン107が下降することで基板Wが吸着部160上に載置される。 FIGS. 2A and 2B are views of the two types of suction units 160 as viewed from above. FIG. 2A is suitable for adsorbing a warp or warp substrate. Here, the warped substrate is a substrate having a point on the substrate surface where the coordinate in the optical axis direction (Z direction) becomes the maximum when viewed from any direction in the XY plane. Further, the warped substrate is a substrate having a point where the coordinates are the minimum. FIG. 2B is suitable for adsorbing a warped substrate. Here, a saddle warped substrate has the maximum coordinates in the optical axis direction (Z direction) when viewed from a certain direction in the XY plane on the substrate surface, and the optical axis direction (Z direction) when viewed from another direction. It is a substrate that has so-called saddle points with the smallest coordinates. The suction unit 160 shown in FIG. 2A includes vacuum suction regions 11 to 13 divided by boundaries 21 to 23, discharge ports 31 to 33 for discharging the air sucked in the vacuum suction regions 11 to 13, and wafer transfer. It is provided with pin lift ports 41 to 43. The vacuum suction area is divided into concentric circles. The suction unit 160 shown in FIG. 2B includes vacuum suction regions 11 to 16 divided by a boundary 24, exhaust ports 31 to 36 for discharging air sucked in the vacuum suction regions 11 to 16, and wafer transfer pin elevating and lowering pins. With mouths 41-43. The vacuum suction area is radially divided. The wafer transfer pin elevating ports 41 to 43 are openings for moving up and down the wafer transfer pin 107 shown in FIG. 3 when transferring the substrate W to and from the substrate transfer hand (not shown). The substrate transfer hand places the substrate W on the wafer transfer pins 107 that have risen from the wafer transfer pin lift ports 41 to 43. After the substrate transfer hand is retracted, the wafer transfer pins 107 are lowered to place the substrate W on the suction unit 160.

図3は図2(A)の吸着部160を含む保持装置の全体を示す図である。真空吸着領域11〜13は、真空吸着時に基板Wを支える多数の小突起で埋められている。排出口31〜33は配管経由で電磁弁SV1〜SV3に接続されている。電磁弁SV1〜SV3は配管分岐用のマニホールド171を経由して真空ポンプ173に接続される。排出口31〜33のそれぞれに接続する配管には、圧力センサP1〜P3が設けられている。圧力センサP1〜P3は、真空吸着領域11〜13の圧力を計測する。真空ポンプ173の元圧は、元圧センサ172により計測される。吸着制御部170は、圧力センサP1〜P3の値に基づいて電磁弁SV1〜SV3を制御して、吸着部160に基板Wを真空吸着させる。なお、各真空吸着領域の圧力を計測するための圧力センサは、排出口全系統でなく必要最小限の系統に配置しても良い。 FIG. 3 is a diagram showing the entire holding device including the suction portion 160 of FIG. The vacuum suction regions 11 to 13 are filled with a large number of small protrusions that support the substrate W during vacuum suction. The discharge ports 31 to 33 are connected to the solenoid valves SV1 to SV3 via piping. The solenoid valves SV1 to SV3 are connected to a vacuum pump 173 via a manifold 171 for branching a pipe. Pressure sensors P1 to P3 are provided in the pipes connected to the discharge ports 31 to 33, respectively. The pressure sensors P1 to P3 measure the pressure in the vacuum suction regions 11 to 13. The original pressure of the vacuum pump 173 is measured by the original pressure sensor 172. The adsorption control unit 170 controls the solenoid valves SV1 to SV3 based on the values of the pressure sensors P1 to P3, and causes the adsorption unit 160 to adsorb the substrate W in vacuum. The pressure sensor for measuring the pressure in each vacuum suction region may be arranged not in the exhaust outlet whole system but in the minimum necessary system.

図4は、下反りの基板Wが吸着部160に搬入された状態を示す図である。図4の状態で、吸着制御部170は、電磁弁SV1〜SV3を全て開放し、真空吸着領域11〜13を真空吸引して基板Wを吸着する。この時、基板Wとの距離が離れている真空吸着領域は、基板Wをうまく吸着することができず、図中の矢印で示すように周囲のエアを吸引してしまう(空吸い)。空吸いをしている真空吸着領域の圧力は、基板Wをうまく吸着している真空吸着領域の圧力よりも高くなる。また、基板‐吸着部間の距離が離れるほど空吸いの量は増加する(=計測される圧力が高くなる)。 FIG. 4 is a diagram showing a state where the warped substrate W is carried into the suction section 160. In the state of FIG. 4, the suction control unit 170 opens all of the solenoid valves SV1 to SV3 and vacuum sucks the vacuum suction regions 11 to 13 to suck the substrate W. At this time, the vacuum suction region, which is distant from the substrate W, cannot successfully suck the substrate W, and sucks ambient air as shown by an arrow in the drawing (idle suction). The pressure in the vacuum suction area where air suction is performed is higher than the pressure in the vacuum suction area where the substrate W is well sucked. Further, the amount of air suction increases as the distance between the substrate and the suction portion increases (=the measured pressure increases).

基板Wは、下反り形状をしており、基板Wと吸着部160との距離は、基板中心から外周へ向かうほど大きくなる。すなわち、圧力センサP1〜P3が示す値は、順に高くなる。この場合、吸着制御部170は、電磁弁SV1〜SV3を順に開放するように制御を行う。これにより、吸着部160は、良好な平坦度で基板Wを吸着保持することができる。図5は、上反りの基板Wが吸着部160に搬入された状態を示す図である。この場合は、図4で示した下反りの基板Wの場合と、逆の吸着順序となる。開放順序(吸着順序)は、吸着制御部170から制御部150へ送られた圧力センサP1〜P3の圧力値をもとに、圧力値が小さい順になるように制御部150が決定し、記憶部152に記憶させる。記憶された吸着順序は、吸着保持を行う時に制御部150が、記憶部152から読み出し、吸着制御部170に出力する。吸着制御部170は、制御部150から送られた吸着順序に基づいて真空吸着を実行する。なお、吸着順序は、ひとつずつ順番でなくとも、圧力値が所定の範囲内で近い複数の電磁弁を同時に開放する(吸着を開始する)ように設定してもよい。 The substrate W has a warp shape, and the distance between the substrate W and the suction unit 160 increases from the center of the substrate toward the outer periphery. That is, the values indicated by the pressure sensors P1 to P3 increase in order. In this case, the adsorption control unit 170 controls to open the solenoid valves SV1 to SV3 in order. As a result, the suction unit 160 can suction and hold the substrate W with good flatness. FIG. 5 is a diagram showing a state in which the warped substrate W is carried into the suction unit 160. In this case, the adsorption order is opposite to that of the case of the substrate W having the downward warp shown in FIG. The release order (adsorption order) is determined by the control unit 150 based on the pressure values of the pressure sensors P1 to P3 sent from the adsorption control unit 170 to the control unit 150 so that the pressure values are in ascending order, and the storage unit. It is stored in 152. The stored suction order is read from the storage unit 152 by the control unit 150 when performing suction holding, and is output to the suction control unit 170. The suction control unit 170 executes vacuum suction based on the suction order sent from the control unit 150. It should be noted that the adsorption order may be set such that a plurality of electromagnetic valves whose pressure values are close to each other within a predetermined range are simultaneously opened (adsorption is started) instead of one by one.

図6は、本実施形態に係る保持装置による真空吸着方法のフローチャートである。工程S101では、まず、制御部150が不図示の基板搬送ハンドを制御し、吸着順序決定に用いるテスト用基板(第1の基板)を吸着部160上に載置する。制御部150は、吸着制御部170を制御して、電磁弁SV1〜SV3を全て開放し、真空吸着領域11〜13を真空吸引してテスト用基板を吸着する。工程S102では、吸着制御部170が制御部150へ圧力センサP1〜P3が計測した圧力データを送る。工程S103では、制御部150が、圧力データをもとに(例えば、小さい順に)吸着順序(開放順序)を設定する。工程S104では、制御部150が、設定した吸着順序を記憶部152に記憶させる。工程S105では、制御部150が、記憶部152から吸着順序を読み出し、吸着制御部170を制御し、読み出した吸着順序によりデバイス製造用の基板の吸着を行う。 FIG. 6 is a flowchart of the vacuum suction method by the holding device according to the present embodiment. In step S101, first, the control unit 150 controls a substrate transfer hand (not shown) to place the test substrate (first substrate) used for determining the suction order on the suction unit 160. The control unit 150 controls the suction control unit 170 to open all the solenoid valves SV1 to SV3 and vacuum suction the vacuum suction regions 11 to 13 to suck the test substrate. In step S102, the suction control unit 170 sends the pressure data measured by the pressure sensors P1 to P3 to the control unit 150. In step S103, the control unit 150 sets the adsorption order (opening order) based on the pressure data (for example, in ascending order). In step S104, the control unit 150 stores the set suction order in the storage unit 152. In step S105, the control unit 150 reads the adsorption order from the storage unit 152, controls the adsorption control unit 170, and adsorbs the substrate for manufacturing the device according to the read adsorption order.

テスト用基板とデバイス製造用基板とは反りを含む形状が同一となるように準備する。テスト用基板は、デバイス製造用基板とは別に準備してもよく、また、2つの基板を同一のロットから選択してもよい。すなわち、同一ロット内の先頭の基板をテスト用基板として、2枚目の基板をデバイス製造用基板として使用してもよい。工程S104では、基板の形状を紐付けて吸着順序が記憶される。同一ロット内の基板の形状を同一とみなせる場合は、ロットと紐付けて吸着順序が記憶される。 The test substrate and the device manufacturing substrate are prepared so that they have the same shape including warpage. The test substrate may be prepared separately from the device manufacturing substrate, or the two substrates may be selected from the same lot. That is, the first substrate in the same lot may be used as the test substrate and the second substrate may be used as the device manufacturing substrate. In step S104, the suction order is stored by associating the shapes of the substrates. If the shapes of substrates in the same lot can be regarded as the same, the suction order is stored in association with the lot.

以上のように、本実施形態の保持装置は、吸着圧の計測に基づいて空吸いを抑える最適な吸着順序を設定するため、基板の平坦度計測のための追加構成や、空吸いによる吸着量減少を補うための追加構成は不要である。また、多様な形状の基板の吸着にも対応できる。本実施形態によれば、良好な平坦度で基板を保持するために有利な保持装置を提供することができる。 As described above, the holding device according to the present embodiment sets the optimum suction sequence for suppressing the suction based on the measurement of the suction pressure, and therefore, the additional configuration for measuring the flatness of the substrate and the suction amount by the suction are set. No additional configuration is needed to make up for the reduction. Further, it is also possible to support adsorption of substrates having various shapes. According to the present embodiment, it is possible to provide a holding device that is advantageous for holding the substrate with good flatness.

(第2実施形態)
本実施形態は、基板Wの反り形状の情報が実測などにより分かっている場合の真空吸着方法である。基板Wの反り形状が予め分かっている場合は、工程S103では、制御部150が基板Wと吸着部160との間の距離に基づいて(例えば、距離が近い順に)吸着順序を設定する。したがって、工程S101および工程S102は不要となる。本実施形態によっても第1実施形態と同様の効果が得られる。
(Second embodiment)
This embodiment is a vacuum suction method when the information on the warp shape of the substrate W is known by actual measurement or the like. When the warp shape of the substrate W is known in advance, in step S103, the control unit 150 sets the suction order based on the distance between the substrate W and the suction unit 160 (for example, in order of decreasing distance). Therefore, step S101 and step S102 are unnecessary. According to this embodiment, the same effect as that of the first embodiment can be obtained.

(第3実施形態)
本実施形態は、第1実施形態の工程S101および工程S102を省略する真空吸着方法である。本実施形態では、吸着部160(第2保持部)に基板Wを載置する前の工程にて、吸着部160による吸着保持と同様の保持をする部材(第1保持部)により、工程S101および工程S102に相当する工程を行う。工程S103では、制御部150が圧力データに基づいて吸着順序を設定する。本実施形態によっても第1実施形態と同様の効果が得られる。当該部材としては、温調プレート等がある。
(Third Embodiment)
The present embodiment is a vacuum suction method in which steps S101 and S102 of the first embodiment are omitted. In the present embodiment, in front of the step of placing the substrate W to the suction unit 160 (second holding portion), by members (first holding portion) for the same retention and suction holding by the suction unit 160, step S101 And the process equivalent to process S102 is performed. In step S103, the control unit 150 sets the adsorption order based on the pressure data. According to this embodiment, the same effect as that of the first embodiment can be obtained. As the member, there is a temperature control plate or the like.

(物品製造方法に係る実施形態)
本発明の実施形態における物品の製造方法は、例えば、半導体デバイス等のマイクロデバイスや微細構造を有する素子等の物品を製造するのに好適である。本実施形態の物品の製造方法は、上記保持装置により保持された基板に対し、上記露光装置を用いてパターンを基板に形成する(露光する)工程と、かかる工程でパターンを形成された基板を加工(現像)する工程とを含む。リソグラフィ装置がインプリント装置である場合は、現像する工程の代わりに、例えば残膜を除去する工程を含む。更に、かかる製造方法は、他の周知の工程(酸化、成膜、蒸着、ドーピング、平坦化、エッチング、レジスト剥離、ダイシング、ボンディング、パッケージング等)を含む。本実施形態の物品の製造方法は、従来の方法に比べて、物品の性能・品質・生産性・生産コストの少なくとも1つにおいて有利である。
(Embodiment of the article manufacturing method)
The method for manufacturing an article in the embodiment of the present invention is suitable for manufacturing an article such as a microdevice such as a semiconductor device or an element having a fine structure. The method for manufacturing an article according to the present embodiment includes a step of forming (exposing) a pattern on a substrate held by the holding device using the exposure device, and a substrate formed with the pattern in the step. Processing (developing). When the lithographic apparatus is an imprint apparatus, it includes, for example, a step of removing a residual film instead of the step of developing. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

以上、本発明の実施の形態を説明してきたが、本発明はこれらの実施の形態に限定されず、その要旨の範囲内において様々な変更が可能である。 Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications can be made within the scope of the gist thereof.

160 吸着部
170 吸着制御部
W 基板


160 adsorption unit 170 adsorption control unit W substrate


Claims (10)

基板を真空吸着して保持する保持装置であって、
複数の吸着領域を有する第1吸着部と、
前記複数の吸着領域を有する第2吸着部と、
前記基板を前記第1吸着部により吸着させたときの圧力に基づいて、前記第2吸着部における前記複数の吸着領域による前記基板の吸着をる順序を決定し
前記順序に従い前記第2吸着部における前記複数吸着領域の吸着を開始して、前記基板を前第2吸着部により吸着させる制御部と、を有する、
ことを特徴とする保持装置。
A holding device for holding a substrate by vacuum suction.
A first suction portion having a plurality of suction regions;
A second suction part having the plurality of suction regions ;
Based on the pressure at which adsorbed the substrate by the first adsorption unit, determines the order in which to start the suction of the substrate by the plurality of suction areas in the second adsorption unit,
Start the adsorption of said plurality of adsorption regions in the follow the order the second adsorption unit, to have a, and a control unit for adsorbing the previous SL second adsorption unit the substrate,
A holding device characterized by the above.
前記圧力は、前記基板を前記第1吸着部における前記複数の吸着領域により吸着したときの当該複数の吸着領域における圧力であることを特徴とする請求項1に記載の保持装置。 The pressure holding device according to claim 1, characterized in that the front Kimoto plate is the pressure in the plurality of absorptive region when adsorbed by said plurality of retaining regions in the first adsorption unit. 前記順序は、前記圧力が小さい順に設定されることを特徴とする請求項1または2に記載の保持装置。 The holding device according to claim 1, wherein the order is set in ascending order of the pressure. 前記順序は、前記第2吸着部における前記複数の吸着領域のうち、前記圧力が所定の範囲内にある吸着領域による吸着を同じタイミングで開始するように設定されることを特徴とする請求項1乃至3のうちいずれか1項に記載の保持装置。 2. The order is set so that the adsorption by the adsorption region in which the pressure is within a predetermined range among the plurality of adsorption regions in the second adsorption unit is started at the same timing. The holding device according to claim 1. 前記第1吸着部は、温調プレートを含むことを特徴とする請求項1に記載の保持装置。The holding device according to claim 1, wherein the first adsorption unit includes a temperature control plate. 前記第1吸着部における前記複数の吸着領域のそれぞれの圧力を計測する複数のセンサと、A plurality of sensors that measure respective pressures of the plurality of suction regions in the first suction unit;
真空ポンプと前記第1吸着部における前記複数の吸着領域のそれぞれとを接続する複数の配管に設けられた複数の弁と、を有し、A plurality of valves provided in a plurality of pipes that connect the vacuum pump and each of the plurality of adsorption regions in the first adsorption unit,
前記制御部は、前記基板を前記第1吸着部に載置して前記複数の弁のすべてを開放した状態で前記複数のセンサにより前記第1吸着部における前記複数の吸着領域のそれぞれの圧力を計測することを特徴とする請求項1乃至5のうちいずれか1項に記載の保持装置。The control unit controls the pressure of each of the plurality of adsorption regions in the first adsorption unit by the plurality of sensors in a state where the substrate is placed on the first adsorption unit and all of the plurality of valves are opened. The holding device according to claim 1, wherein the holding device measures.
前記制御部は、前記複数のセンサにより計測された圧力が小さい順となるように前記順序を決定することを特徴とする請求項6に記載の保持装置。The holding device according to claim 6, wherein the control unit determines the order such that pressures measured by the plurality of sensors are in ascending order. 板を真空吸着して保持する保持方法であって、
複数の吸着領域を有する第1吸着部により前記基板を吸着する第1吸着工程と、
前記第1吸着工程において前記基板を吸着したときの圧力に基づいて、前記複数の吸着領域を有する第2吸着部による前記基板の吸着をる順序を決定する決定工程と
前記順序に従い前記第2吸着部における前記複数の吸着領域の吸着を開始して、前記第2吸着部にり前記基板を吸着する第2吸着工程と、を有する
ことを特徴とする保持方法。
The board A holding method for holding by vacuum suction,
A first adsorption step of adsorbing the substrate by a first adsorption part having a plurality of adsorption regions;
A determination step of, based on the pressure at the time of adsorbing the substrate in the first adsorption step, to determine the order in which to start the suction of the substrate by the second adsorption unit having a plurality of retaining regions,
Start the adsorption of said plurality of retaining regions in the second adsorption unit follow the order, having a second adsorption step of adsorbing pre Symbol substrate Ri by the second adsorption unit,
A holding method characterized by the above.
パターンを基板に形成するリソグラフィ装置であって、
前記基板を真空吸着して保持する請求項1乃至のうちいずれか1項に記載の保持装置を備えることを特徴とするリソグラフィ装置。
A lithographic apparatus for forming a pattern on a substrate, comprising:
Lithographic apparatus comprising: a holding device according to any one of claims 1 to 7 for holding the substrate by vacuum suction.
請求項に記載のリソグラフィ装置を用いてパターンを基板に形成する工程と、
前記工程でパターンを形成された前記基板を加工する工程と、を有し、
加工された前記基板から物品製造することを特徴とする物品の製造方法。
Forming a pattern on a substrate using the lithographic apparatus according to claim 9 ;
A step of processing the substrate having a pattern formed in the step ,
An article manufacturing method comprising: manufacturing an article from the processed substrate .
JP2016061982A 2016-03-25 2016-03-25 Holding apparatus, holding method, lithographic apparatus, and article manufacturing method Active JP6711661B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016061982A JP6711661B2 (en) 2016-03-25 2016-03-25 Holding apparatus, holding method, lithographic apparatus, and article manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016061982A JP6711661B2 (en) 2016-03-25 2016-03-25 Holding apparatus, holding method, lithographic apparatus, and article manufacturing method

Publications (2)

Publication Number Publication Date
JP2017175070A JP2017175070A (en) 2017-09-28
JP6711661B2 true JP6711661B2 (en) 2020-06-17

Family

ID=59972210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016061982A Active JP6711661B2 (en) 2016-03-25 2016-03-25 Holding apparatus, holding method, lithographic apparatus, and article manufacturing method

Country Status (1)

Country Link
JP (1) JP6711661B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102639158B1 (en) 2019-07-23 2024-02-22 삼성전자주식회사 Wafer processing apparatus, and wafer processing method using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1086085A (en) * 1996-09-19 1998-04-07 Dainippon Screen Mfg Co Ltd Substrate adsorption device and method
JP2004158610A (en) * 2002-11-06 2004-06-03 Nikon Corp Aligner and aligning method
JP2004273714A (en) * 2003-03-07 2004-09-30 Tokyo Electron Ltd Equipment and method for substrate treatment
JP4794882B2 (en) * 2005-03-25 2011-10-19 キヤノン株式会社 Scanning exposure apparatus and scanning exposure method
JP5877005B2 (en) * 2011-07-29 2016-03-02 株式会社Screenホールディングス Substrate processing apparatus, substrate holding apparatus, and substrate holding method

Also Published As

Publication number Publication date
JP2017175070A (en) 2017-09-28

Similar Documents

Publication Publication Date Title
JP6708455B2 (en) Holding apparatus, holding method, lithographic apparatus, and article manufacturing method
JP6698706B2 (en) Substrate holder, lithographic apparatus and device manufacturing method
TWI449122B (en) Clamping device, method for loading an object on a support, lithographic apparatus and machine readable medium
JP6980562B2 (en) Pattern forming device, alignment mark detection method and pattern forming method
TW202034450A (en) Substrate holding device, exposure apparatus and device manufacturing method
KR102169894B1 (en) Chuck, substrate holding device, pattern forming device, and article manufacturing method
WO2003065427A1 (en) Exposure device and exposure method
JPH1167882A (en) Substrate suction device/method
KR100620981B1 (en) Lithographic Apparatus Device Manufacturing Method and Substrate Holder
JP5559284B2 (en) Reticle assembly, lithographic apparatus, its use in a lithographic process, and method of projecting two or more image fields in a single scan movement of a lithographic process
JP6711661B2 (en) Holding apparatus, holding method, lithographic apparatus, and article manufacturing method
JP4348734B2 (en) Substrate holding apparatus, exposure apparatus, and device manufacturing method
JP6362416B2 (en) Holding device, lithographic apparatus, and article manufacturing method
JP4685041B2 (en) Stage apparatus, exposure apparatus, and device manufacturing method
JP2005044882A (en) Transporting device and aligner
TWI792198B (en) Cleaning tool and method for cleaning a portion of a lithography apparatus
JP2005085991A (en) Exposure apparatus and manufacturing method of device using the apparatus
US11048176B2 (en) Substrate processing apparatus and article manufacturing method
JP4196037B2 (en) Substrate processing system, substrate processing apparatus, and device manufacturing method
JPWO2004066371A1 (en) Exposure equipment
WO2002047132A1 (en) X-ray projection exposure device, x-ray projection exposure method, and semiconductor device
JP7495819B2 (en) Holding device, lithographic apparatus and method for manufacturing an article
JP7025165B2 (en) Manufacturing method of exposure equipment, transport equipment and articles
JP2014082288A (en) Exposure method, exposure device and method for manufacturing article
JP6294636B2 (en) Master holding apparatus, exposure apparatus, article manufacturing method, and master holding method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190325

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20191213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191224

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200428

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200528

R151 Written notification of patent or utility model registration

Ref document number: 6711661

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151