JP4176819B1 - Exposure method and exposure apparatus - Google Patents

Exposure method and exposure apparatus Download PDF

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JP4176819B1
JP4176819B1 JP2007555408A JP2007555408A JP4176819B1 JP 4176819 B1 JP4176819 B1 JP 4176819B1 JP 2007555408 A JP2007555408 A JP 2007555408A JP 2007555408 A JP2007555408 A JP 2007555408A JP 4176819 B1 JP4176819 B1 JP 4176819B1
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substrate
photomask
support member
substrate support
pattern
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JPWO2008139643A1 (en
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健 三宅
俊博 高木
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Sanei Giken Co Ltd
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Sanei Giken Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/7035Proximity or contact printers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70783Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09018Rigid curved substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09918Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0548Masks
    • H05K2203/056Using an artwork, i.e. a photomask for exposing photosensitive layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/302Bending a rigid substrate; Breaking rigid substrates by bending
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0008Apparatus or processes for manufacturing printed circuits for aligning or positioning of tools relative to the circuit board

Abstract

基板(1)を、四角い基板支持部材(11)の主面に固定支持させる。パターンが描かれたフォトマスク(2)を、基板(1)の感光層を覆う位置に配置する。フォトマスク(2)を通して基板(1)の感光層に光を照射することによりパターンを基板に転写する。露光の際、フォトマスク(2)と基板(1)とが互いに均一に接触しており、且つ、基板支持部材(11)および基板(1)が所望の湾曲形状に変形された状態とされている。基板支持部材(11)は、互いに対向する第一の対の側縁部と同じ方向に延びる第一の軸、又は、互いに対向する第二の対の側縁部と同じ方向に延びる第二の軸を中心として、個別に湾曲量を制御されながら、基板(1)と共に湾曲される。これにより、パターンの寸法は実質的に変化されて基板(1)に転写される。
【選択図】図2
The substrate (1) is fixedly supported on the main surface of the square substrate support member (11). A photomask (2) on which a pattern is drawn is arranged at a position covering the photosensitive layer of the substrate (1). The pattern is transferred to the substrate by irradiating the photosensitive layer of the substrate (1) with light through the photomask (2). At the time of exposure, the photomask (2) and the substrate (1) are in uniform contact with each other, and the substrate support member (11) and the substrate (1) are deformed into a desired curved shape. Yes. The substrate support member (11) has a first axis extending in the same direction as the first pair of side edges facing each other, or a second axis extending in the same direction as the second pair of side edges facing each other. The substrate is bent together with the substrate (1) while the amount of bending is individually controlled around the axis. Thereby, the dimension of the pattern is substantially changed and transferred to the substrate (1).
[Selection] Figure 2

Description

本発明は、パターンが描かれたフォトマスクと、表面に感光層が形成された基板とを重ねて配置し、フォトマスクを通して基板に光を照射することにより、パターンを基板に転写する露光方法および露光装置に関する。   The present invention relates to an exposure method for transferring a pattern to a substrate by arranging a photomask on which a pattern is drawn and a substrate on which a photosensitive layer is formed in an overlapping manner, and irradiating the substrate with light through the photomask. The present invention relates to an exposure apparatus.

従来の技術Conventional technology

従来、プリント回路基板等の表面に導電パターン等を成形するために、表面に感光層が形成された基板と、パターンが描かれたフォトマスクとを重ねて配置し、フォトマスクを通して基板に光を照射することにより、パターンを基板表面の感光層に転写する露光方法が広く行われてきた。   Conventionally, in order to form a conductive pattern or the like on the surface of a printed circuit board or the like, a substrate having a photosensitive layer formed on the surface and a photomask on which the pattern is drawn are arranged to overlap, and light is transmitted to the substrate through the photomask. An exposure method for transferring a pattern to a photosensitive layer on a substrate surface by irradiation has been widely performed.

この露光方法においては、基板のほぼ全面にあらかじめ設けられた多数の導電孔等と、フォトマスクに描かれたパターンとの位置合わせを行う必要がある。位置合わせには、フォトマスクと基板との互いに対応する位置にそれぞれ複数設けられた位置合わせマークが利用される。   In this exposure method, it is necessary to align a number of conductive holes or the like provided in advance on almost the entire surface of the substrate with a pattern drawn on a photomask. For alignment, a plurality of alignment marks provided at positions corresponding to each other between the photomask and the substrate are used.

基板とフォトマスクとのそれぞれに設けられた位置合わせマークを、互いに重なり合った状態で、CCDカメラ等の光センサによって読みとり、そのデータに基づいて、基板とフォトマスクとにおける位置合わせマーク間のずれ量を演算する。この演算結果に従い、位置合わせマークどうしの位置を一致させるように基板またはフォトマスクのいずれかを、基板またはフォトマスクの面内に含まれるX軸方向、Y軸方向およびθ方向に移動させて、基板とフォトマスクとの位置合わせを行う。   The alignment marks provided on each of the substrate and photomask are read by an optical sensor such as a CCD camera in a state of overlapping each other, and based on the data, the amount of misalignment between the alignment marks on the substrate and photomask Is calculated. According to this calculation result, either the substrate or the photomask is moved in the X axis direction, the Y axis direction, and the θ direction included in the plane of the substrate or the photomask so as to match the positions of the alignment marks, The substrate and the photomask are aligned.

基板とフォトマスクとの位置合わせを行った後、フォトマスクを通して基板に光を照射することにより、フォトマスクに描かれたパターンが基板表面の感光層上に転写され、露光処理が完了する。   After aligning the substrate and the photomask, the substrate is irradiated with light through the photomask, whereby the pattern drawn on the photomask is transferred onto the photosensitive layer on the substrate surface, and the exposure process is completed.

しかし、フォトマスクと基板とに付された複数の位置合わせマーク間の距離、即ち位置合わせマーク間ピッチは、製作誤差や温度、湿度の変化、あるいは露光工程に至るまでの加熱処理などによる基板の収縮等の変形によって変動する。これにより、フォトマスクと基板とのそれぞれに付された複数の位置合わせマーク間ピッチに誤差が生じる。その結果、フォトマスクと基板との位置合わせマークをすべて完全に一致させることは困難である。   However, the distance between a plurality of alignment marks on the photomask and the substrate, that is, the pitch between the alignment marks is determined by the manufacturing error, temperature, humidity change, or heat treatment up to the exposure process. It fluctuates due to deformation such as shrinkage. As a result, an error occurs in the pitch between the plurality of alignment marks attached to the photomask and the substrate. As a result, it is difficult to completely match all the alignment marks between the photomask and the substrate.

そこで、フォトマスクと基板とが互いに均一に接触し且つフォトマスクと基板とが互いに対して凹状または凸状に湾曲させられた状態でフォトマスクを通して基板の感光層に光を照射することにより、フォトマスクに描かれたパターンをその寸法を実質的に変化させて基板に転写する露光方法が考えられた。   Therefore, by irradiating the photosensitive layer of the substrate with light through the photomask in a state where the photomask and the substrate are in uniform contact with each other and the photomask and the substrate are curved concavely or convexly with respect to each other, There has been considered an exposure method in which a pattern drawn on a mask is transferred to a substrate while changing its dimensions substantially.

この露光方法の原理について、図15を参照して説明する。   The principle of this exposure method will be described with reference to FIG.

図15Aは、同じ長さLの基板1とフォトマスク2とが平面状に均一に接触して重ねられた状態を示している。フォトマスク2の一方の主面2Aにパターンが描かれている。なお、フォトマスク2として、パターンが描かれた薄いフィルムをガラス板に密着させたものを使用しても良い。通常使用されるガラス製のフォトマスク2の厚みT2は、5mm前後である。基板1がプリント回路基板の場合、その厚みT1は、多くの場合、1mm以下である。なお、フォトマスク2の厚みT2の中心線2Cおよび基板1の厚みT1の中心線2Bをそれぞれ一点鎖線で示す。   FIG. 15A shows a state in which the substrate 1 and the photomask 2 having the same length L are uniformly contacted and stacked in a planar shape. A pattern is drawn on one main surface 2A of the photomask 2. In addition, you may use as the photomask 2 what stuck the thin film with which the pattern was drawn to the glass plate. The thickness T2 of the commonly used glass photomask 2 is around 5 mm. When the substrate 1 is a printed circuit board, the thickness T1 is often 1 mm or less. In addition, the center line 2C of the thickness T2 of the photomask 2 and the center line 2B of the thickness T1 of the substrate 1 are indicated by alternate long and short dash lines.

次に図15Bは、基板1とフォトマスク2とが互いに接触して重ねられた状態で、フォトマスク2の基板1側が凹状になるように、フォトマスク2と基板1とが共に曲げられた状態を示している。図示するように、フォトマスク2は厚みT2が厚いので、厚みT2の中心線2Cを境界線として、基板1側が縮み、反対側が伸びる。基板1は厚みT1の中心線2Bを境界線として、フォトマスク2側が伸び、反対側は縮む。ただし、基板1の厚みT1は、フォトマスクに比してかなり薄いので、基板1の表裏面における伸縮量はわずかである。   Next, FIG. 15B shows a state in which the photomask 2 and the substrate 1 are bent together so that the substrate 1 side of the photomask 2 is concave with the substrate 1 and the photomask 2 being in contact with each other. Is shown. As shown in the drawing, since the photomask 2 has a large thickness T2, the substrate 1 side contracts and the opposite side extends with the center line 2C of the thickness T2 as a boundary line. The substrate 1 extends on the photomask 2 side with the center line 2B having the thickness T1 as a boundary line, and contracts on the opposite side. However, since the thickness T1 of the substrate 1 is considerably thinner than that of the photomask, the amount of expansion / contraction on the front and back surfaces of the substrate 1 is slight.

この結果、基板1とフォトマスク2とが互いに接する部分において、基板1に対するフォトマスク2の長さは、フォトマスク2の基板1側の面の縮小量S1と基板1のフォトマスク2側の面の伸長量S2との和だけ、実質的に縮小したことになる。したがって、この状態で露光すると、フォトマスク2の主面2Aに描かれたパターンは、実質的にこの値に比例して縮小されて基板1に転写されることになる。   As a result, in the portion where the substrate 1 and the photomask 2 are in contact with each other, the length of the photomask 2 relative to the substrate 1 is the reduction amount S1 of the surface of the photomask 2 on the substrate 1 side and the surface of the substrate 1 on the photomask 2 side. Is substantially reduced by the sum of the expansion amount S2. Therefore, when exposed in this state, the pattern drawn on the main surface 2A of the photomask 2 is reduced in proportion to this value and transferred to the substrate 1.

また、図15Cは、基板1とフォトマスク2とが、図15Bの場合とは逆方向に曲げられた状態を表している。この場合、基板1とフォトマスク2とが互いに接する部分において、基板1に対するフォトマスク2の長さは、フォトマスク2の基板1側の面の伸長量S1'と基板1のフォトマスク2側の面の縮小量S2'との和だけ、実質的に伸長したことになる。   FIG. 15C shows a state in which the substrate 1 and the photomask 2 are bent in the opposite direction to the case of FIG. 15B. In this case, the length of the photomask 2 relative to the substrate 1 at the portion where the substrate 1 and the photomask 2 are in contact with each other is such that the extension amount S1 ′ of the surface of the photomask 2 on the substrate 1 side and the photomask 2 side of the substrate 1 on the photomask 2 side. It is substantially expanded by the sum of the surface reduction amount S2 ′.

この状態で露光すると、フォトマスクの主面2Aに描かれたパターンは、実質的にこの値に比例して拡大されて基板1に転写されることになる。   When exposed in this state, the pattern drawn on the main surface 2A of the photomask is substantially enlarged in proportion to this value and transferred to the substrate 1.

この露光方法によれば、基板の位置合わせマーク間ピッチの寸法が、基板ごとに異なっていても、一枚のフォトマスクの位置合わせマーク間ピッチの寸法を実質的に変化させて、基板の位置合わせマーク間ピッチの寸法に近づけることができる。その結果、生産性を損なわず、且つ、コスト上昇を抑えて、フォトマスクに描かれたパターンを基板の定められた位置に精度良く転写することが可能となる。   According to this exposure method, even if the size of the pitch between the alignment marks on the substrate is different for each substrate, the size of the pitch between the alignment marks on one photomask is substantially changed to change the position of the substrate. It can be close to the dimension of the pitch between alignment marks. As a result, it is possible to accurately transfer the pattern drawn on the photomask to a predetermined position on the substrate without impairing productivity and suppressing an increase in cost.

図11ないし図14を参照して、この従来の露光方法およびそれに用いる従来の露光装置を説明する。   The conventional exposure method and the conventional exposure apparatus used therefor will be described with reference to FIGS.

図12は従来の露光装置の概略側断面図であり、図11はフォトマスクおよびフォトマスク支持部材を省略して示す平面図である。   FIG. 12 is a schematic sectional side view of a conventional exposure apparatus, and FIG. 11 is a plan view showing a photomask and a photomask support member omitted.

従来の露光装置は、基板1を支持するための基板支持部材4と、基板支持部材4を支持するためのベース部材5と、フォトマスク2の外縁部を支持するフォトマスク支持部材12とを備えている。   The conventional exposure apparatus includes a substrate support member 4 for supporting the substrate 1, a base member 5 for supporting the substrate support member 4, and a photomask support member 12 for supporting the outer edge portion of the photomask 2. ing.

フォトマスク支持部材12は、駆動機構(図示せず)によって、ガイド機構(図示せず)に案内されて基板支持部材4に対して接近および離反できる構造となっている。   The photomask support member 12 is structured to be able to approach and separate from the substrate support member 4 by being guided by a guide mechanism (not shown) by a drive mechanism (not shown).

さらにフォトマスク支持部材12は、フレーム15と、フォトマスク2の支持面内の位置を規制するための位置規制ピン19およびコイルばね18と、基板支持部材4に対して接近および離反する方向へのフォトマスク2の所定量の移動を許容するための押さえ板ばね16と、フレーム15と押さえ板ばね16との間を接続するスペーサ17とを備え、これらによってフォトマスク2を支持する構造となっている。   Further, the photomask support member 12 is arranged so as to approach and separate from the frame 15, the position regulation pin 19 and the coil spring 18 for regulating the position within the support surface of the photomask 2, and the substrate support member 4. The photomask 2 includes a presser plate spring 16 for allowing a predetermined amount of movement and a spacer 17 that connects the frame 15 and the presser plate spring 16 to support the photomask 2. Yes.

基板支持部材4上には、基板1を取り囲むようにして封止部材9が設けられている。基板1の露光面1aとは反対側の面は、基板支持部材4に当接する。基板支持部材4は、真空吸引孔10を通して作用する負圧によって基板1を吸着保持し、また、負圧を解放することによって基板1の吸着保持を解除することができる。   A sealing member 9 is provided on the substrate support member 4 so as to surround the substrate 1. The surface of the substrate 1 opposite to the exposure surface 1 a is in contact with the substrate support member 4. The substrate support member 4 can suck and hold the substrate 1 by a negative pressure acting through the vacuum suction hole 10 and can release the suction and hold of the substrate 1 by releasing the negative pressure.

ベース部材5には、基板支持部材4に押圧力または引っ張り力を与えるためのアクチュエータ6が設けられている。基板支持部材4とベース部材5との間には、基板支持部材4の傾斜以外の動きを拘束する複数の連結部材7がアクチュエータ6を取り囲むように均一に配置されている。   The base member 5 is provided with an actuator 6 for applying a pressing force or a pulling force to the substrate support member 4. Between the substrate support member 4 and the base member 5, a plurality of connecting members 7 that restrain movement other than the inclination of the substrate support member 4 are uniformly arranged so as to surround the actuator 6.

まず、CCDカメラ3等の光センサによって基板1の位置合わせマークとフォトマスク2の位置合わせマークとを読取り、読み取ったデータに基づいて、基板1とフォトマスク2とにおける位置合わせマーク間のずれ量を演算する(図12)。この演算結果に従い、アクチュエータ6を作動させて基板支持部材4を基板1とともに所望の一様な球状に湾曲させる(図13)。その後、フォトマスク支持部材15を駆動機構(図示せず)によって、基板支持部材4に向けて降下させ、フォトマスク2と封止部材9とを接触させる。それによって、基板1と基板支持部材4とフォトマスク2とによって囲まれる空間領域が、封止部材9によって封止される。次に、この空間領域を真空ポンプ(図示せず)などの手段で減圧する。差圧によってフォトマスク2は基板1に倣うように湾曲しながら基板1と均一に接触する。フォトマスク2を基板1に倣うように湾曲させることで、基板1に対向する側のフォトマスク表面に描かれた位置合わせマーク間のピッチが変化する。   First, the alignment mark on the substrate 1 and the alignment mark on the photomask 2 are read by an optical sensor such as a CCD camera 3, and the shift amount between the alignment marks on the substrate 1 and the photomask 2 is based on the read data. Is calculated (FIG. 12). According to the calculation result, the actuator 6 is operated to bend the substrate support member 4 together with the substrate 1 into a desired uniform spherical shape (FIG. 13). Thereafter, the photomask support member 15 is lowered toward the substrate support member 4 by a driving mechanism (not shown), and the photomask 2 and the sealing member 9 are brought into contact with each other. Thereby, the space region surrounded by the substrate 1, the substrate support member 4 and the photomask 2 is sealed by the sealing member 9. Next, this space region is decompressed by means such as a vacuum pump (not shown). Due to the differential pressure, the photomask 2 comes into uniform contact with the substrate 1 while being curved so as to follow the substrate 1. By bending the photomask 2 to follow the substrate 1, the pitch between the alignment marks drawn on the photomask surface on the side facing the substrate 1 changes.

この状態で再度CCDカメラ3で基板1の位置合わせマークとフォトマスク2の位置合わせマークとを読取り、読み取ったデータに基づいて、基板1とフォトマスク2とにおける位置合わせマーク間のずれ量を演算する。演算値が所定のずれ量以下であれば、光8をフォトマスク2を通して基板1に照射して露光する(図14)。   In this state, the CCD camera 3 reads the alignment mark on the substrate 1 and the alignment mark on the photomask 2 again, and calculates the amount of deviation between the alignment marks on the substrate 1 and the photomask 2 based on the read data. To do. If the calculated value is equal to or less than the predetermined deviation amount, the substrate 1 is irradiated with light 8 through the photomask 2 for exposure (FIG. 14).

しかしながら、上述した従来の露光方法および露光装置では不十分であることが分かった。従来の露光方法および露光装置は、基板を一様な球状に湾曲させるため、基板の変形が一様である場合にのみ有効なのである。実際の基板の寸法変化は、X軸方向およびY軸方向のいずれか一方の変化が他方の変化よりも大きいことがある。また、生じた寸法変化がX軸またはY軸に沿って一様でない場合もある。いずれも、基板の変形が一様とはならないので、従来の露光方法および露光装置では、フォトマスクの位置合わせマークと基板の位置合わせマークピッチとを一致させることができず、また、フォトマスクに描かれたパターンと基板の導電孔等とを一致させることができないのである。   However, it has been found that the above-described conventional exposure method and exposure apparatus are insufficient. The conventional exposure method and exposure apparatus are effective only when the deformation of the substrate is uniform because the substrate is curved into a uniform spherical shape. As for the actual dimensional change of the substrate, a change in one of the X-axis direction and the Y-axis direction may be larger than the other change. In addition, the resulting dimensional change may not be uniform along the X axis or the Y axis. In either case, since the deformation of the substrate is not uniform, the conventional exposure method and exposure apparatus cannot match the alignment mark pitch of the photomask and the alignment mark pitch of the substrate, and the photomask The drawn pattern cannot be matched with the conductive holes of the substrate.

また、従来の露光装置における基板支持方法では、基板の支持力が十分ではなく、基板支持部材を湾曲させる際に基板支持部材と基板との間に相対的な位置ずれが生じる。このため、パターン寸法の実質的な変化量は、実用上必要とされる量より少なかった。   Further, in the conventional substrate support method in the exposure apparatus, the support force of the substrate is not sufficient, and a relative positional shift occurs between the substrate support member and the substrate when the substrate support member is curved. For this reason, the substantial change amount of the pattern dimension was smaller than the amount required for practical use.

そこで本発明は、基板の変形が一様でない場合であっても、それに対応して基板のスケールとフォトマスクのスケールとを全領域にわたって一致させて露光することのできる露光方法および露光装置を提供することと、実用上十分な寸法変化量を確保することを課題とする。   Therefore, the present invention provides an exposure method and an exposure apparatus that can perform exposure by matching the scale of the substrate and the scale of the photomask over the entire area even when the deformation of the substrate is not uniform. And to ensure a practically sufficient amount of dimensional change.

上記課題を解決するため、本発明によれば、
パターンが描かれたフォトマスクを、表面に感光層が形成された基板の感光層を覆う位置に配置し、前記フォトマスクと前記基板とを互いに均一に接触させた後、前記フォトマスクを通して前記基板の感光層に光を照射することにより前記パターンを前記基板に転写する露光方法において、
全体として四角形状をしており、互いに対向する第一の対の側縁部と互いに対向する第二の対の側縁部とを有する板状の基板支持部材を用意し、
前記フォトマスクの前記パターンが描かれた表面に前記感光層が対向するようにして、前記基板を、前記基板支持部材の主面に、相対的なずれを生じさせることなく固定支持させ、
前記基板支持部材を、前記第一の対の側縁部と同じ方向に延びる第一の軸、又は、前記第二の対の側縁部と同じ方向に延びる第二の軸を中心として、個別に湾曲量を制御しながら湾曲させることにより、前記基板支持部材を前記基板と共に所望の湾曲形状に変形させ、
前記フォトマスクと前記基板とが互いに均一に接触しており、且つ、前記基板支持部材および前記基板が前記所望の湾曲形状に変形した状態で、前記フォトマスクを通して前記感光層に光を照射することにより、前記パターンの寸法を実質的に変化させて前記基板に転写することを特徴とする、露光方法が提供される。
In order to solve the above problems, according to the present invention,
A photomask on which a pattern is drawn is disposed at a position covering the photosensitive layer of the substrate having a photosensitive layer formed on the surface, and the photomask and the substrate are brought into uniform contact with each other, and then the substrate is passed through the photomask. In the exposure method of transferring the pattern to the substrate by irradiating light to the photosensitive layer of
A plate-like substrate support member having a rectangular shape as a whole and having a first pair of side edges facing each other and a second pair of side edges facing each other is prepared,
The substrate is fixedly supported on the main surface of the substrate support member without causing a relative shift so that the photosensitive layer faces the surface on which the pattern of the photomask is drawn,
The substrate support members are individually arranged around a first axis extending in the same direction as the first pair of side edges or a second axis extending in the same direction as the second pair of side edges. The substrate support member is deformed into a desired curved shape together with the substrate by bending the substrate while controlling the amount of bending,
Irradiating light to the photosensitive layer through the photomask in a state where the photomask and the substrate are in uniform contact with each other and the substrate support member and the substrate are deformed into the desired curved shape. Thus, an exposure method is provided, wherein the pattern is transferred to the substrate while substantially changing the dimension of the pattern.

前記基板支持部材を前記第一の軸を中心として、または、前記第二の軸を中心として湾曲させる際、前記第一および第二の軸の各々に沿った複数位置で前記基板支持部材の湾曲量を個別に制御することが好ましい。   When the substrate support member is bent about the first axis or about the second axis, the substrate support member is bent at a plurality of positions along each of the first and second axes. It is preferred to control the amounts individually.

前記第一の軸を中心とする前記基板支持部材の湾曲は、前記第一の対の側縁部に力またはモーメントを作用させることにより行い、前記第二の軸を中心とする湾曲は、前記第二の対の側縁部に力またはモーメントを作用させることにより行うことができる。   The curvature of the substrate support member about the first axis is performed by applying a force or moment to the side edges of the first pair, and the curvature about the second axis is This can be done by applying a force or moment to the second pair of side edges.

前記フォトマスクと前記基板との互いに対応する位置にそれぞれ複数の位置合わせマークを設け、該位置合わせマークをマーク検出手段によって検出し、検出したデータを基に、前記フォトマスクの前記位置合わせマークと前記基板の前記位置合わせマークとの間のピッチのずれ量を演算し、この演算結果に従って前記基板支持部材の湾曲量を制御するようにしてもよい。   A plurality of alignment marks are provided at positions corresponding to each other on the photomask and the substrate, the alignment marks are detected by a mark detection unit, and the alignment marks of the photomask are detected based on the detected data. A pitch deviation amount between the substrate and the alignment mark may be calculated, and the bending amount of the substrate support member may be controlled according to the calculation result.

前記マーク検出手段はCCDカメラとするこができる。   The mark detection means can be a CCD camera.

前記フォトマスク上に前記パターンを大きめに作成し、露光時には、前記基板支持部材を前記基板と共に前記フォトマスクに対して凸状に湾曲させることにより、前記基板の前記感光層が形成された面の寸法を実質的に拡大させて所定の大きさにし、且つ、前記フォトマスクを前記基板に倣わせることにより、前記パターンの寸法を実質的に縮小させて所定の大きさにし、その後、前記パターンを前記基板に転写することができる。   The pattern is made larger on the photomask, and at the time of exposure, the substrate support member is curved together with the substrate in a convex shape with respect to the photomask so that the surface of the substrate on which the photosensitive layer is formed is formed. The size is substantially enlarged to a predetermined size, and the photomask is made to follow the substrate to substantially reduce the size of the pattern to a predetermined size, and then the pattern. Can be transferred to the substrate.

本発明によれば、また、パターンが描かれたフォトマスクと感光層が形成された基板とを互いに均一に接触させた後、前記フォトマスクを通して前記基板の感光層に光を照射することにより前記パターンを前記基板に転写する露光方法に用いられる露光装置であって、
前記感光層が形成された面と反対側の前記基板の面全体にわたって前記基板を固定支持するための基板支持部材にして、互いに対向する第一の対の側縁部と、互いに対向する第二の対の側縁部と、前記基板を相対的なずれを生じさせることなく固定支持するための固定支持機構とを有する基板支持部材と、
前記パターンが描かれた前記フォトマスクの表面が前記感光層に対向するように前記フォトマスクを支持するためのフォトマスク支持部材と、
前記フォトマスクが前記基板に対して均一に接触して倣うように前記基板支持部材と前記フォトマスク支持部材とを互いに相対移動させるための駆動機構と、
前記基板支持部材の前記第一の対の側縁部に沿って設けられた複数の第一の作用点と、
前記複数の第一の作用点に対して力またはモーメントを作用させることにより、前記基板支持部材を前記基板とともに前記第一の対の側縁部と同じ方向に延びる第一の軸を中心として湾曲させるための第一の変形機構と、
前記基板支持部材の前記第二の対の側縁部に沿って設けられた複数の第二の作用点と、
前記複数の第二の作用点に対して力またはモーメントを作用させることにより、前記基板支持部材を前記基板とともに前記第二の対の側縁部と同じ方向に延びる第二の軸を中心として湾曲させるための第二の変形機構と、
前記駆動機構の作動時に前記基板支持部材と前記フォトマスク支持部材との相対移動を案内するためのガイド機構と、
前記フォトマスクを通して前記基板の前記感光層に光を照射するための光照射装置と、
を備えている、露光装置も提供される。
According to the present invention, the photomask on which the pattern is drawn and the substrate on which the photosensitive layer is formed are brought into uniform contact with each other, and then the photosensitive layer on the substrate is irradiated with light through the photomask. An exposure apparatus used in an exposure method for transferring a pattern to the substrate,
A substrate supporting member for fixing and supporting the substrate over the entire surface of the substrate opposite to the surface on which the photosensitive layer is formed, and a first pair of side edges facing each other and a second facing each other A substrate support member having a pair of side edges and a fixed support mechanism for fixing and supporting the substrate without causing relative displacement,
A photomask support member for supporting the photomask such that the surface of the photomask on which the pattern is drawn faces the photosensitive layer;
A drive mechanism for moving the substrate support member and the photomask support member relative to each other so that the photomask uniformly contacts and follows the substrate;
A plurality of first operating points provided along side edges of the first pair of the substrate support members;
By applying a force or moment to the plurality of first action points, the substrate support member is curved with the substrate as a center about a first axis extending in the same direction as the side edges of the first pair. A first deformation mechanism for causing
A plurality of second operating points provided along side edges of the second pair of the substrate support members;
By applying a force or moment to the plurality of second action points, the substrate support member is curved with the substrate as a center about a second axis extending in the same direction as the second pair of side edges. A second deformation mechanism for causing
A guide mechanism for guiding relative movement between the substrate support member and the photomask support member during operation of the drive mechanism;
A light irradiation device for irradiating the photosensitive layer of the substrate with light through the photomask;
An exposure apparatus is also provided.

前記第一の変形機構を、前記複数の第一の作用点のそれぞれにおいて、作用させる力またはモーメントの大きさを所定の量に制御可能なものとし、
前記第二の変形機構を、前記複数の第二の作用点のそれぞれにおいて、作用させる力またはモーメントの大きさを所定の量に制御可能なものとすることができる。
The first deformation mechanism is capable of controlling the magnitude of the force or moment to be applied to each of the plurality of first action points to a predetermined amount,
The second deformation mechanism can control the magnitude of the force or moment to be applied to each of the plurality of second action points to a predetermined amount.

前記第一の変形機構または前記第二の変形機構は、モータを備えていてもよい。   The first deformation mechanism or the second deformation mechanism may include a motor.

あるいはまた、前記第一の変形機構または前記第二の変形機構は、空気圧力で駆動される機構を備えていてもよい。   Alternatively, the first deformation mechanism or the second deformation mechanism may include a mechanism driven by air pressure.

前記フォトマスクと前記基板との互いに対応する位置にそれぞれ設けられた、複数の位置合わせマークを検出するためのマーク検出手段と、
前記マーク検出手段により検出したデータを基に、前記フォトマスクの前記位置合わせマークと前記基板の前記位置合わせマークとの間のピッチのずれ量を演算するための演算手段とを有し、
前記第一の変形機構および前記第二の変形機構の少なくとも一方が、前記演算手段の演算結果に従って、前記第一の作用点および前記第二の作用点の少なくとも一方に作用させる力またはモーメントの大きさを調整して前記基板支持部材の湾曲量を制御するようにしてもよい。
Mark detection means for detecting a plurality of alignment marks respectively provided at positions corresponding to each other of the photomask and the substrate;
Based on the data detected by the mark detection means, the calculation means for calculating the amount of deviation of the pitch between the alignment mark of the photomask and the alignment mark of the substrate,
The magnitude of the force or moment that at least one of the first deformation mechanism and the second deformation mechanism acts on at least one of the first action point and the second action point according to the calculation result of the calculation means. The bending amount of the substrate support member may be controlled by adjusting the thickness.

前記フォトマスク支持部材は、前記基板に対して接近および離反する方向への前記フォトマスクの所定量の移動を許容する構造を有していてもよい。   The photomask support member may have a structure that allows a predetermined amount of movement of the photomask in a direction toward and away from the substrate.

前記フォトマスク支持部材は、前記フォトマスクの前記フォトマスク支持部材の支持面内の位置を規制するための位置規制機構を有していてもよい。   The photomask support member may have a position regulation mechanism for regulating the position of the photomask within the support surface of the photomask support member.

前記固定支持機構は、前記基板支持部材の、前記基板を固定支持する面に形成された複数の溝または峰部を含んでいてもよい。   The fixed support mechanism may include a plurality of grooves or ridges formed on a surface of the substrate support member that fixes and supports the substrate.

前記固定支持機構は、前記基板支持部材の、前記基板を固定支持する面に形成された複数の溝と、前記溝の底部に設けられ、負圧源に接続された少なくともひとつの真空吸引孔とを含んでいてもよい。   The fixed support mechanism includes a plurality of grooves formed on a surface of the substrate support member for fixing and supporting the substrate, and at least one vacuum suction hole provided at a bottom portion of the groove and connected to a negative pressure source. May be included.

前記複数の溝の底部に設けられた前記少なくともひとつの真空吸引孔が、溝ごとまたは複数の溝を含む群ごとの負圧源に接続されるようにしてもよい。   The at least one vacuum suction hole provided at the bottom of the plurality of grooves may be connected to a negative pressure source for each groove or for each group including the plurality of grooves.

前記基板支持部材の厚みは、5mm以上とすることができる。   The thickness of the substrate support member can be 5 mm or more.

前記第一の変形機構および前記第二の変形機構は、前記基板支持部材を支持するためのベース部材に載置することができる。   The first deformation mechanism and the second deformation mechanism can be placed on a base member for supporting the substrate support member.

このように、本発明によれば、実用上十分な寸法変化量が確保でき、且つ、基板がさまざまな態様で変形しても、それに対応して基板およびフォトマスクを湾曲させることができるので、基板のスケールとフォトマスクのスケールとを全領域にわたって一致させて露光を行うことができる。   Thus, according to the present invention, a practically sufficient amount of dimensional change can be secured, and even if the substrate is deformed in various modes, the substrate and the photomask can be curved correspondingly, Exposure can be performed with the scale of the substrate and the scale of the photomask matched over the entire region.

図1は、本発明の一実施形態による露光装置の概略側断面図であり、基板が基板支持部材と共に変形される前の状態を示す。FIG. 1 is a schematic sectional side view of an exposure apparatus according to an embodiment of the present invention, showing a state before a substrate is deformed together with a substrate support member. 図2は、本発明の一実施形態による露光装置の概略側断面図であり、基板が基板支持部材と共に変形された後の状態を示す。FIG. 2 is a schematic sectional side view of an exposure apparatus according to an embodiment of the present invention, showing a state after the substrate is deformed together with the substrate support member. 図3は、本発明の一実施形態による露光装置の概略横断面図であり、図1におけるA−A矢視図に相当する。FIG. 3 is a schematic cross-sectional view of an exposure apparatus according to an embodiment of the present invention, and corresponds to the AA arrow view in FIG. 図4は、従来方法において、基板とフォトマスクとが湾曲したときの、双方に設けられた位置合わせマークの位置関係を説明する図。FIG. 4 is a diagram for explaining the positional relationship between alignment marks provided on both the substrate and the photomask when the substrate and the photomask are curved in the conventional method. 図5は、本発明の方法の一態様において、基板とフォトマスクとが湾曲したときの、双方に設けられた位置合わせマークの位置関係を説明する図。FIG. 5 is a diagram illustrating a positional relationship between alignment marks provided on both of the substrate and the photomask when the substrate and the photomask are curved in an embodiment of the method of the present invention. 図6は、本発明の方法の別の態様において、基板とフォトマスクとが湾曲したときの、双方に設けられた位置合わせマークの位置関係を説明する図。FIG. 6 is a diagram for explaining the positional relationship between alignment marks provided on both the substrate and the photomask when the substrate and the photomask are curved in another aspect of the method of the present invention. 図7は、本発明の別の実施形態による露光装置の概略縦断面図であり、基板が基板支持部材と共に変形される前の状態を示す。FIG. 7 is a schematic longitudinal sectional view of an exposure apparatus according to another embodiment of the present invention, showing a state before the substrate is deformed together with the substrate support member. 図8は、本発明の別の実施形態による露光装置の概略横断面図であり、図7におけるB−B矢視図に相当する。FIG. 8 is a schematic cross-sectional view of an exposure apparatus according to another embodiment of the present invention, and corresponds to a view taken along the line BB in FIG. 図9は、本発明による露光方法の原理を説明するための模式図。FIG. 9 is a schematic diagram for explaining the principle of the exposure method according to the present invention. 図10は、基板支持部材の固定支持機構を示す図。Aは平面図。Bは、一つの溝を通る面で切った断面図。Cは、固定支持機構の溝の断面形状を示す図。Dは、溝の別の断面形状を示す図。FIG. 10 is a diagram illustrating a fixing support mechanism for a substrate support member. A is a plan view. B is a cross-sectional view cut along a plane passing through one groove. C is a diagram showing a cross-sectional shape of a groove of a fixed support mechanism. D is a figure which shows another cross-sectional shape of a groove | channel. 図11は、フォトマスクおよびフォトマスク支持部材を省略した状態での従来の露光装置の概略平面図。FIG. 11 is a schematic plan view of a conventional exposure apparatus with a photomask and a photomask support member omitted. 図12は、従来の露光装置の概略側断面図であり、基板が変形される前の状態を示す。FIG. 12 is a schematic sectional side view of a conventional exposure apparatus, showing a state before the substrate is deformed. 図13は、従来の露光装置の概略側断面図であり、基板が変形された後の状態を示す。FIG. 13 is a schematic sectional side view of a conventional exposure apparatus, and shows a state after the substrate is deformed. 図14は、従来の露光装置の概略側断面図であり、フォトマスクを変形させて露光作業を行っている状態を示す。FIG. 14 is a schematic sectional side view of a conventional exposure apparatus, and shows a state in which an exposure operation is performed by deforming a photomask. 図15は、基板およびフォトマスクを湾曲させて行う露光方法の原理を説明するための模式図。FIG. 15 is a schematic diagram for explaining the principle of an exposure method performed by curving a substrate and a photomask.

発明の実施をするための最良の形態BEST MODE FOR CARRYING OUT THE INVENTION

上述した本発明の内容を、図を参照して説明する。図9Aから図9Cは、本発明の原理を説明する断面図である。   The contents of the present invention described above will be described with reference to the drawings. 9A to 9C are cross-sectional views for explaining the principle of the present invention.

図9Aは、基板支持部材11との間に相対的な位置ずれが生じないように密着固定された基板1と、フォトマスク2とが、平面状に均一に接触して重ねられた状態を示している。   FIG. 9A shows a state in which the substrate 1 and the photomask 2 that are fixed in close contact with the substrate support member 11 so as not to cause a relative misalignment and the photomask 2 are uniformly contacted and stacked in a planar shape. ing.

フォトマスク2の一方の主面2Aにパターンが描かれている。なお、フォトマスク2として、パターンが描かれた薄いフィルムをガラス板に密着させたものを使用しても良い。通常使用されるガラス製のフォトマスク2の厚みT2は、5mm前後であり、基板1がプリント回路基板の場合、基板1の厚みT1は、多くの場合、1mm以下である。なお、フォトマスク2の厚みT2の中心線2Cおよび基板1の厚みT1と基板支持部材4の厚みT3とを合わせた厚みの中心線2Dをそれぞれ一点鎖線で示す。   A pattern is drawn on one main surface 2A of the photomask 2. In addition, you may use as the photomask 2 what stuck the thin film with which the pattern was drawn to the glass plate. The thickness T2 of the commonly used glass photomask 2 is about 5 mm. When the substrate 1 is a printed circuit board, the thickness T1 of the substrate 1 is often 1 mm or less. In addition, the center line 2C of the thickness T2 of the photomask 2 and the center line 2D of the thickness obtained by combining the thickness T1 of the substrate 1 and the thickness T3 of the substrate support member 4 are indicated by alternate long and short dash lines.

次に図9Bは、基板1とフォトマスク2とが互いに接触して重ねられた状態で、フォトマスク2の基板1側が凹状になるように、フォトマスク2と基板1および基板支持部材11とが共に曲げられた状態を示している。図示するように、フォトマスク2は厚みT2の中心線2Cを境界線として、基板1側が縮み、反対側は伸びる。   Next, FIG. 9B shows that the photomask 2, the substrate 1, and the substrate support member 11 are arranged so that the substrate 1 side of the photomask 2 is concave with the substrate 1 and the photomask 2 being in contact with each other. Both are shown bent. As shown in the figure, the photomask 2 has the center line 2C having a thickness T2 as a boundary line, the substrate 1 side contracts, and the opposite side extends.

一方、基板1は、基板支持部材11との間に相対的な位置ずれが生じないように密着固定された状態で曲げられるため、基板1の厚みT1と基板支持部材11の厚みT3とを合わせた厚みの中心線2Dを境界線として、全体が伸長側にある。その結果、フォトマスク2に面した側の基板1の面は、S3だけ伸びる。   On the other hand, since the substrate 1 is bent in a state where the substrate 1 is tightly fixed so as not to cause a relative displacement with respect to the substrate support member 11, the thickness T1 of the substrate 1 and the thickness T3 of the substrate support member 11 are matched. The center line 2D having a certain thickness is used as a boundary, and the whole is on the extension side. As a result, the surface of the substrate 1 facing the photomask 2 extends by S3.

図15における単体の基板1に比べ、基板支持部材11と一体化した図9における基板1は、基板支持部材11の厚みT3分だけ厚くなったと考えることができる。したがって、図9Bにおける基板1の伸び量S3は、図15Bにおける基板1の伸び量S2と比べて大きくなる。この結果、基板1とフォトマスク2とが互いに接する部分における、基板1に対するフォトマスク2の長さは、フォトマスク2の基板1側の面の縮小量S1と基板1のフォトマスク2側の面の伸長量S3との和だけ、実質的に縮小したことになる。この状態で露光すると、フォトマスク2の主面2Aに描かれたパターンを実質的にこの値に比例して縮小して基板に転写することになる。   Compared with the single substrate 1 in FIG. 15, the substrate 1 in FIG. 9 integrated with the substrate support member 11 can be considered to be thicker by the thickness T3 of the substrate support member 11. Accordingly, the extension amount S3 of the substrate 1 in FIG. 9B is larger than the extension amount S2 of the substrate 1 in FIG. 15B. As a result, the length of the photomask 2 relative to the substrate 1 at the portion where the substrate 1 and the photomask 2 are in contact with each other is the reduction amount S1 of the surface of the photomask 2 on the substrate 1 side and the surface of the substrate 1 on the photomask 2 side. Is substantially reduced by the sum of the expansion amount S3. When exposed in this state, the pattern drawn on the main surface 2A of the photomask 2 is reduced in proportion to this value and transferred to the substrate.

また、図9Cは、基板1とフォトマスク2とが、図9Bの場合とは逆方向に曲げられた状態を表している。この場合、基板1とフォトマスク2とが互いに接する部分における、基板1に対するフォトマスク2の長さは、基板1の長さに対して、フォトマスク2の基板1側の面の伸長量S1'と基板1のフォトマスク2側の面の縮小量S3'との和だけ、実質伸長したことになる。   FIG. 9C shows a state where the substrate 1 and the photomask 2 are bent in the opposite direction to that in FIG. 9B. In this case, the length of the photomask 2 relative to the substrate 1 at the portion where the substrate 1 and the photomask 2 are in contact with each other is the extension amount S1 ′ of the surface of the photomask 2 on the substrate 1 side with respect to the length of the substrate 1. And the reduction amount S3 ′ of the surface of the substrate 1 on the photomask 2 side is substantially expanded.

いずれの場合においても、S3>S2、S3'>S2'となるので、従来より大きな寸法変化量を確保することができる。   In any case, since S3> S2 and S3 ′> S2 ′, it is possible to ensure a larger amount of dimensional change than before.

以上に説明したことから分かるように、湾曲させるにあたって支障がない限りにおいて、基板支持部材11の厚さT3は厚いほうが有利である。なぜなら、同じ湾曲量であれば、基板支持部材11の厚さT3が厚い方が、基板1の寸法変化量は大きくなるからである。したがって、基板支持部材11の厚さは5mm以上が望ましい。   As can be understood from the above description, it is advantageous that the thickness T3 of the substrate support member 11 is thick as long as there is no hindrance in bending. This is because the dimensional change amount of the substrate 1 increases as the thickness T3 of the substrate support member 11 increases with the same bending amount. Therefore, the thickness of the substrate support member 11 is desirably 5 mm or more.

図1ないし図3は、本発明の一実施態様による露光装置を示す。露光装置は、基板1を支持するための基板支持部材11と、フォトマスク2を支持するためのフォトマスク支持部材12と、フォトマスク2が基板1に対して均一に接触して倣うように基板支持部材11とフォトマスク支持部材12とを相対移動させるための駆動機構(図示せず)と、駆動機構の作動時に基板支持部材11とフォトマスク支持部材12との相対移動を案内するためのガイド機構(図示せず)と、フォトマスク2を通して基板1の感光層に光を照射するための光照射装置(図示せず)とを備えている。   1 to 3 show an exposure apparatus according to an embodiment of the present invention. The exposure apparatus includes a substrate support member 11 for supporting the substrate 1, a photomask support member 12 for supporting the photomask 2, and a substrate so that the photomask 2 is in uniform contact with the substrate 1 and follows it. A drive mechanism (not shown) for moving the support member 11 and the photomask support member 12 relative to each other, and a guide for guiding the relative movement between the substrate support member 11 and the photomask support member 12 when the drive mechanism operates. A mechanism (not shown) and a light irradiation device (not shown) for irradiating the photosensitive layer of the substrate 1 with light through the photomask 2 are provided.

基板支持部材11の上面には、複数の溝が設けられている(ここでは溝38のみを表示)。溝の底部には、負圧源に接続された少なくともひとつの真空吸引孔が設けられている(ここでは真空吸引孔38aのみを表示)。これらの溝および真空吸引孔は、基板支持部材11の主面に基板1を固定支持させるための固定支持機構を構成する。基板支持部材11は、真空吸引孔38a等からの真空吸引により上面に基板1を吸着保持可能である。従来は基板支持部材の表面に真空吸引孔だけが存在し、溝は設けられていなかったが(図12参照)、本発明では真空吸引孔と関連づけて溝を設けた。それにより、より大きな面積を利用して基板を吸着保持することができる。したがって、基板を従来より確実に固定保持し、基板と基板支持部材との間の相対的な位置ずれの発生を防止することができる。固定支持機構については、図10に基づいて後に詳述する。   A plurality of grooves are provided on the upper surface of the substrate support member 11 (only the grooves 38 are shown here). At the bottom of the groove, at least one vacuum suction hole connected to a negative pressure source is provided (only the vacuum suction hole 38a is shown here). These grooves and vacuum suction holes constitute a fixed support mechanism for fixing and supporting the substrate 1 on the main surface of the substrate support member 11. The substrate support member 11 can adsorb and hold the substrate 1 on the upper surface by vacuum suction from the vacuum suction hole 38a or the like. Conventionally, only the vacuum suction hole exists on the surface of the substrate support member and no groove is provided (see FIG. 12). However, in the present invention, the groove is provided in association with the vacuum suction hole. Thereby, the substrate can be sucked and held using a larger area. Therefore, the substrate can be fixed and held more reliably than before, and the occurrence of relative displacement between the substrate and the substrate support member can be prevented. The fixed support mechanism will be described in detail later based on FIG.

基板支持部材11は、支柱13を介してベース部材14に支持されている。支柱13は、板ばね(図示せず)等を介して基板支持部材11の中央下面と接続しており、基板支持部材11が湾曲することを妨げない。   The substrate support member 11 is supported by the base member 14 via the support column 13. The support column 13 is connected to the lower center surface of the substrate support member 11 via a leaf spring (not shown) or the like, and does not prevent the substrate support member 11 from being bent.

フォトマスク支持部材12は、フレーム15と、押さえ板ばね16のような弾性要素と、フレーム15と押さえ板ばね16との間を接続するスペーサ17と、コイルばね18のような偏倚要素と、位置規制ピン19とを備える。押さえ板ばね16は、基板1に対してフォトマスク2が接近および離反するときに、フォトマスク2の基板1に対して接近および離反する方向の所定量の移動を許容する。コイルばね18および位置規制ピン19は、フォトマスク支持部材12に対するフォトマスク2の、フォトマスク支持部材の支持面内での位置を規制する役割をする。   The photomask support member 12 includes a frame 15, an elastic element such as a pressing plate spring 16, a spacer 17 that connects the frame 15 and the pressing plate spring 16, a biasing element such as a coil spring 18, and a position And a regulation pin 19. When the photomask 2 approaches and separates from the substrate 1, the holding plate spring 16 allows a predetermined amount of movement in the direction in which the photomask 2 approaches and separates from the substrate 1. The coil spring 18 and the position regulation pin 19 serve to regulate the position of the photomask 2 with respect to the photomask support member 12 within the support surface of the photomask support member.

基板支持部材11は、全体として四角形状をしており、互いに対向する第一の対の側縁部20と、互いに対向する第二の対の側縁部21とを有している。第一の対の側縁部20のそれぞれに沿って、下方に延びる複数のロッド22が設けられている。同様にして、第二の対の側縁部21のそれぞれに沿って、下方に延びる複数のロッド23が設けられている。ロッド22が側縁部20に取り付けられている箇所は、基板支持部材11を湾曲させるために力またはモーメントが作用せしめられる複数の第一の作用点となる。同様にして、ロッド23が側縁部21に取り付けられている箇所は、基板支持部材11を湾曲させるために力またはモーメントが作用せしめられる複数の第二の作用点となる。   The substrate support member 11 has a rectangular shape as a whole, and has a first pair of side edge portions 20 facing each other and a second pair of side edge portions 21 facing each other. A plurality of rods 22 extending downward are provided along each of the first pair of side edges 20. Similarly, a plurality of rods 23 extending downward are provided along each of the second pair of side edge portions 21. The portions where the rods 22 are attached to the side edge portions 20 serve as a plurality of first operation points at which a force or a moment is applied to bend the substrate support member 11. Similarly, the location where the rod 23 is attached to the side edge portion 21 becomes a plurality of second action points where a force or a moment is applied to bend the substrate support member 11.

露光装置は、基板支持部材11を湾曲させるための一対の第一の変形機構24と、一対の第二の変形機構25とを備える。第一の変形機構24は、ベース部材14に載置された複数のアクチュエータ26と、複数のアクチュエータ26のロッド先端に取り付けられた力伝達バー27と、バー27に沿って複数設けられた力伝達ローラ28とを有している。ローラ28のそれぞれは、ロッド22の下端に押圧力を付与可能なように位置付けられている。第二の変形機構25も同様の構成をしており、複数のアクチュエータ29と、力伝達バー30と、力伝達ローラ31とを有している。   The exposure apparatus includes a pair of first deformation mechanisms 24 for bending the substrate support member 11 and a pair of second deformation mechanisms 25. The first deformation mechanism 24 includes a plurality of actuators 26 mounted on the base member 14, a force transmission bar 27 attached to the rod tips of the plurality of actuators 26, and a plurality of force transmissions provided along the bars 27. And a roller 28. Each of the rollers 28 is positioned so that a pressing force can be applied to the lower end of the rod 22. The second deformation mechanism 25 has the same configuration and includes a plurality of actuators 29, a force transmission bar 30, and a force transmission roller 31.

アクチュエータ26,29は、モータを利用したものとすることができる。あるいはまた、アクチュエータ26,29は空気圧力を利用したピストン・シリンダ型のものとすることもできる。   The actuators 26 and 29 can be motors. Alternatively, the actuators 26 and 29 may be of a piston / cylinder type using air pressure.

第一の変形機構24のアクチュエータ26を作動させ、力伝達バー27および力伝達ローラ28を介してロッド22の下端に押圧力を付与すると、基板支持部材11の第一の対の側縁部20に対するロッド22の取り付け箇所、すなわち、複数の第一の作用点に曲げモーメントが加えられる。この曲げモーメントによって、基板支持部材11は、側縁部20と同じ方向に延びる第一の軸32の回りに湾曲せしめられる。同様にして、第二の変形機構25のアクチュエータ29を作動させると、基板支持部材11は、側縁部21と同じ方向に延びる第二の軸33の回りに湾曲せしめられる。   When the actuator 26 of the first deformation mechanism 24 is operated to apply a pressing force to the lower end of the rod 22 via the force transmission bar 27 and the force transmission roller 28, the first pair of side edges 20 of the substrate support member 11. A bending moment is applied to the attachment point of the rod 22 with respect to, that is, a plurality of first action points. By this bending moment, the substrate support member 11 is bent around the first axis 32 extending in the same direction as the side edge portion 20. Similarly, when the actuator 29 of the second deformation mechanism 25 is operated, the substrate support member 11 is bent around the second shaft 33 extending in the same direction as the side edge portion 21.

基板1は、基板支持部材11とともに湾曲せしめられる。基板1が湾曲した後、フォトマスク2を基板1と均一に接触するように移動させれば、フォトマスク2も基板1に倣って湾曲する。   The substrate 1 is bent together with the substrate support member 11. If the photomask 2 is moved so as to be in uniform contact with the substrate 1 after the substrate 1 is curved, the photomask 2 is also curved following the substrate 1.

フォトマスク2の、基板1に対向する面に描かれるパターンを大きめに作成しておき、常にパターンの寸法を実質的に縮小して転写するように、基板1をフォトマスク2に対して凸状に湾曲させ、フォトマスク2を基板1に倣わせた状態で露光することが好ましい。   A pattern drawn on the surface of the photomask 2 facing the substrate 1 is made large, and the substrate 1 is convex with respect to the photomask 2 so that the pattern is always transferred with a substantially reduced dimension. It is preferable that the exposure is performed in a state where the photomask 2 is made to follow the substrate 1.

フォトマスク2を基板1の中央から周辺に向かって徐々に倣わせることにより、双方の間に空気が捕捉される可能性が小さくなるからである。   This is because by gradually following the photomask 2 from the center to the periphery of the substrate 1, the possibility that air is trapped between the two becomes small.

基板1とフォトマスク2とが均一に接触した後に、基板1および基板支持部材11を湾曲させ、フォトマスク2がそれに倣うことにより双方が湾曲するようにしてもよい。   After the substrate 1 and the photomask 2 are uniformly contacted, the substrate 1 and the substrate support member 11 may be curved, and the photomask 2 may follow the curve so that both are curved.

本発明においては、第一の変形機構24と第二の変形機構25とを個別に作動させることにより、基板支持部材11の第一の軸32回りの湾曲量と、第二の軸33回りの湾曲量とを個別に制御することができる。   In the present invention, the first deformation mechanism 24 and the second deformation mechanism 25 are individually operated, whereby the amount of bending around the first axis 32 of the substrate support member 11 and the second axis 33 around. The amount of bending can be individually controlled.

また、第一の変形機構24の複数のアクチュエータ26のそれぞれの作動の量が異なるようにすることにより、それぞれのロッド22に作用する力、ひいては、複数の第一の作用点のそれぞれに作用するモーメントの大きさを所定量に調整するよう制御することができる。第二の変形機構25においても同様の作動が可能である。こうすることにより、基板支持部材11を湾曲させるにあたり、第一の軸32または第二の軸33に沿った複数位置で基板支持部材11の湾曲量を個別に制御することができる。   Further, by making the amount of operation of each of the plurality of actuators 26 of the first deformation mechanism 24 different, the force acting on each rod 22 and thus acting on each of the plurality of first action points. It can be controlled to adjust the magnitude of the moment to a predetermined amount. The second deformation mechanism 25 can perform the same operation. Thus, when the substrate support member 11 is bent, the amount of bending of the substrate support member 11 can be individually controlled at a plurality of positions along the first shaft 32 or the second shaft 33.

力伝達バー27,30を用いることにより、使用するアクチュエータ26,29の数は、モーメントの作用点の数よりも少なくてすむ。作用点の数は、力伝達ローラ28,31の数を増減することにより任意に変えることができる。一つの力伝達バーに対して2つのアクチュエータがあれば、軸32,33に沿った複数位置における基板支持部材11の湾曲量を連続的に変えることができる。このように、力伝達バー27,30は、構造の簡素化と制御の容易化とを可能にする。   By using the force transmission bars 27 and 30, the number of actuators 26 and 29 to be used is smaller than the number of moment application points. The number of action points can be arbitrarily changed by increasing or decreasing the number of force transmission rollers 28 and 31. If there are two actuators for one force transmission bar, the amount of curvature of the substrate support member 11 at a plurality of positions along the axes 32 and 33 can be continuously changed. As described above, the force transmission bars 27 and 30 can simplify the structure and facilitate the control.

本発明による湾曲量の個別制御がもたらす利点について、図4ないし図6を参照して説明する。   The advantages provided by the individual control of the bending amount according to the present invention will be described with reference to FIGS.

図4ないし図6では、基板1とフォトマスク2とが互いに重なり合った状態を示している。   4 to 6 show a state in which the substrate 1 and the photomask 2 overlap each other.

フォトマスク2と基板1との互いに対応する位置には、それぞれ複数の位置合わせマーク34,35(図示例ではそれぞれ4個)が設けられている。   A plurality of alignment marks 34 and 35 (four in the illustrated example) are provided at positions corresponding to each other between the photomask 2 and the substrate 1.

基板1とフォトマスク2とを位置合わせするときには、位置合わせマーク34,35をCCDカメラのようなマーク検出手段によって検出し、検出したデータを基に、位置合わせマーク34,35間のピッチのずれ量を演算し、この演算結果に従って、湾曲量を制御する。本発明による露光装置は、この目的のためにマーク検出手段および演算手段を備えることができる。   When aligning the substrate 1 and the photomask 2, the alignment marks 34 and 35 are detected by a mark detection means such as a CCD camera, and the pitch deviation between the alignment marks 34 and 35 is detected based on the detected data. The amount is calculated, and the bending amount is controlled according to the calculation result. The exposure apparatus according to the present invention can be provided with mark detection means and calculation means for this purpose.

図4は、従来の露光方法における湾曲方法で位置合わせマークどうしを一致させようとした場合の模式図である。   FIG. 4 is a schematic diagram when the alignment marks are to be matched by the bending method in the conventional exposure method.

従来の湾曲方法では、基板1が一様な球状に湾曲されるため、それにフォトマスク2を倣わせると、フォトマスク2の位置合わせマーク34は、図中の縦方向と横方向共にそれぞれ決まった割合でしかピッチ変化させることができない。   In the conventional bending method, since the substrate 1 is bent into a uniform spherical shape, the alignment mark 34 of the photomask 2 is determined in each of the vertical direction and the horizontal direction in the drawing when the photomask 2 is made to follow it. The pitch can only be changed at a certain rate.

そのため、フォトマスク2の位置合わせマーク34a〜34dを基板1の位置合わせマーク35a〜35dに合わせようとしても、実際には位置合わせマーク34a'〜34d'の位置まで近づけることしかできない。   For this reason, even if the alignment marks 34a to 34d of the photomask 2 are to be aligned with the alignment marks 35a to 35d of the substrate 1, in reality, they can only be brought close to the positions of the alignment marks 34a 'to 34d'.

結局、基板1の位置合わせマーク35にフォトマスク2の位置合わせマーク34を一致させることはできなかった。   Eventually, the alignment mark 34 of the photomask 2 could not be aligned with the alignment mark 35 of the substrate 1.

図5は、本発明の露光方法の一態様により、位置合わせマークの位置が図4に示す場合であっても、基板1の位置合わせマーク35にフォトマスク2の位置合わせマーク34を一致させることができることを説明する図である。   FIG. 5 shows that the alignment mark 34 of the photomask 2 is made to coincide with the alignment mark 35 of the substrate 1 even when the position of the alignment mark is shown in FIG. It is a figure explaining what can be done.

本発明では、第一の変形機構によって、第一の対の側縁部のそれぞれに、互いに等しい大きさの所定の力f1,f2(またはモーメント)を加え、第二の変形機構によって、第二の対の側縁部のそれぞれに、互いに等しいがf1,f2とは異なる大きさの力f3,f4(またはモーメント)を加えることができるので、図中の横方向軸回りの基板支持部材の湾曲量と縦方向軸回りの基板支持部材の湾曲量とを個別に制御することができる。   In the present invention, predetermined forces f1 and f2 (or moments) having the same magnitude are applied to each of the first pair of side edges by the first deformation mechanism, and the second deformation mechanism Since forces f3 and f4 (or moments) having the same magnitude but different from f1 and f2 can be applied to each of the side edges of the pair, the curvature of the substrate support member around the horizontal axis in the figure. The amount and the amount of curvature of the substrate support member about the longitudinal axis can be individually controlled.

それに伴い、基板1の湾曲量も同様に制御されるので、フォトマスク2が基板1に倣うことによるフォトマスク2の位置合わせマーク34のピッチ変化は、図中の横方向と縦方向とで異なる量となる。   Accordingly, the amount of curvature of the substrate 1 is controlled in the same manner, and therefore, the pitch change of the alignment mark 34 of the photomask 2 due to the photomask 2 following the substrate 1 is different between the horizontal direction and the vertical direction in the drawing. Amount.

したがって、図5に示すように、所定の力f1、f2(またはモーメント)と力f3、f4(またはモーメント)とを選択することで、基板1の位置合わせマーク35にフォトマスク2の位置合わせマーク34を一致させることができる。   Therefore, as shown in FIG. 5, by selecting a predetermined force f1, f2 (or moment) and force f3, f4 (or moment), the alignment mark 35 of the photomask 2 is aligned with the alignment mark 35 of the substrate 1. 34 can be matched.

図6は、基板1がさらに複雑に変形した場合であっても、基板1の位置合わせマーク35にフォトマスク2の位置合わせマーク34を一致させることができることを説明する図である。   FIG. 6 is a diagram for explaining that the alignment mark 34 of the photomask 2 can be matched with the alignment mark 35 of the substrate 1 even when the substrate 1 is further complicatedly deformed.

この場合、フォトマスク2の位置合わせマーク34を基板1の位置合わせマーク35に一致させるためには、フォトマスク2の位置合わせマーク34のピッチ変化量を、図中の横方向と縦方向とのそれぞれに沿った複数位置で可変としなければならない。   In this case, in order to make the alignment mark 34 of the photomask 2 coincide with the alignment mark 35 of the substrate 1, the pitch change amount of the alignment mark 34 of the photomask 2 is changed between the horizontal direction and the vertical direction in the figure. It must be variable at multiple positions along each.

本発明では、第一および第二の変形機構によって基板支持部材のそれぞれの側縁部に作用させる力f1,f2,f3,f4(またはモーメント)を、図中の横方向軸と縦方向軸とに沿った複数の位置でそれぞれ所定の値になるように調整することが可能なので、基板支持部材の湾曲量をこれら複数の位置で個別に制御することができる。   In the present invention, the forces f1, f2, f3, f4 (or moments) applied to the respective side edge portions of the substrate support member by the first and second deformation mechanisms are represented by the horizontal axis and the vertical axis in the figure. Therefore, the amount of curvature of the substrate support member can be individually controlled at the plurality of positions.

それに伴い、基板支持部材に支持される基板1の湾曲量も同様に制御されるので、フォトマスク2が基板1に倣うことによるフォトマスク2の位置合わせマーク34のピッチ変化量は、図中の横方向と縦方向とに沿った複数位置でそれぞれ異なる値となることができる。   Accordingly, the amount of curvature of the substrate 1 supported by the substrate support member is similarly controlled. Therefore, the amount of change in the pitch of the alignment mark 34 of the photomask 2 due to the photomask 2 following the substrate 1 is shown in the figure. Different values can be obtained at a plurality of positions along the horizontal direction and the vertical direction.

したがって、図6に示すように、複数の位置に力f1、f2、f3、f4(またはモーメント)をそれぞれ所定の値で加えることで、基板1の位置合わせマーク35にフォトマスク2の位置合わせマーク34を一致させることができる。   Therefore, as shown in FIG. 6, by applying forces f1, f2, f3, and f4 (or moments) to a plurality of positions at predetermined values, the alignment mark 35 of the photomask 2 is aligned with the alignment mark 35 of the substrate 1. 34 can be matched.

図7および図8は、本発明による露光装置の別の実施態様を示す。図1ないし図3に示した実施態様と異なる点は、第一および第二の変形機構としての駆動装置36が、基板支持部材11のそれぞれの側縁部に、モーメントではなく力を加える構成をしていることである。駆動装置36は、基板支持部材11の側縁部20、21のそれぞれに沿って複数設けられている。駆動装置36は、ベース部材14に載置されており、駆動装置36の作動ロッド37の先端は、自在継手等を利用して基板支持部材11の側縁部20、21の下面に接続されている。   7 and 8 show another embodiment of the exposure apparatus according to the present invention. The difference from the embodiment shown in FIGS. 1 to 3 is that the driving device 36 as the first and second deformation mechanisms applies a force, not a moment, to each side edge of the substrate support member 11. Is. A plurality of drive devices 36 are provided along each of the side edge portions 20 and 21 of the substrate support member 11. The drive device 36 is placed on the base member 14, and the distal end of the operating rod 37 of the drive device 36 is connected to the lower surfaces of the side edges 20 and 21 of the substrate support member 11 using a universal joint or the like. Yes.

それぞれの駆動装置36は、個別に作動可能であり、基板支持部材11の側縁部20,21に沿った複数位置に対して引っ張り力および押圧力を付与することができる。したがって、図7および図8に示した露光装置においても、図5および図6で説明したような位置合わせが可能である。   Each drive device 36 can be operated individually, and can apply a pulling force and a pressing force to a plurality of positions along the side edges 20 and 21 of the substrate support member 11. Therefore, the exposure apparatus shown in FIGS. 7 and 8 can be aligned as described with reference to FIGS.

図10は、基板1を、前記基板支持部材11の主面に、相対的なずれを生じさせることなく固定支持させるための固定支持機構の具体的な構成を示す。固定支持機構は、基板支持部材11の上面、すなわち、基板1を固定支持する面に形成された複数の溝38,39,40を含む。溝に代えて、峰部(図示せず)を設けてもよい。これらの溝38,39,40または峰部は、基板支持部材11上に基板1を把持する役割を果たす。   FIG. 10 shows a specific configuration of a fixing support mechanism for fixing and supporting the substrate 1 on the main surface of the substrate supporting member 11 without causing relative displacement. The fixed support mechanism includes a plurality of grooves 38, 39, and 40 formed on the upper surface of the substrate support member 11, that is, the surface that fixes and supports the substrate 1. Instead of the groove, a peak (not shown) may be provided. These grooves 38, 39, 40 or ridges serve to hold the substrate 1 on the substrate support member 11.

固定支持機構はまた、これらの溝38,39,40と、これらの溝38,39,40の底部に設けられ、負圧源に接続された少なくともひとつの真空吸引孔38a,39a、40aとを含む構成とすることができる。それぞれの真空吸引孔38a,39a、40aは、負圧源に接続されている。図10Bは、溝38内の真空吸引孔38aが負圧源41に接続されている構造を示す。基板1は、負圧源からの負圧により、基板支持部材11上に吸着固定される。   The fixed support mechanism also includes these grooves 38, 39, 40 and at least one vacuum suction hole 38a, 39a, 40a provided at the bottom of these grooves 38, 39, 40 and connected to a negative pressure source. It can be set as the structure containing. Each vacuum suction hole 38a, 39a, 40a is connected to a negative pressure source. FIG. 10B shows a structure in which the vacuum suction hole 38 a in the groove 38 is connected to the negative pressure source 41. The substrate 1 is adsorbed and fixed on the substrate support member 11 by a negative pressure from a negative pressure source.

図10Aに示すように、溝38,39,40は、それぞれが互いに隔離されるように形成することができる。この場合、各溝ごとに別々の負圧源が設けられるようにしてもよい。あるいはまた、図10Aに示す2つの溝38を第一の群の溝とし、2つの溝39を第二の群の溝とし、1つの溝40を第三の群の溝とし、それぞれの群ごとに別々の負圧源が設けられるようにしてもよい。いずれの場合においても、一部のエリアにおいて空気漏れが生じた場合でも基板1を基板支持部材11上に十分に固定支持できるような負圧力が基板1に作用するようになされている。   As shown in FIG. 10A, the grooves 38, 39, 40 can be formed so as to be isolated from each other. In this case, a separate negative pressure source may be provided for each groove. Alternatively, the two grooves 38 shown in FIG. 10A are the first group of grooves, the two grooves 39 are the second group of grooves, and the one groove 40 is the third group of grooves. A separate negative pressure source may be provided. In either case, a negative pressure is applied to the substrate 1 so that the substrate 1 can be sufficiently fixed and supported on the substrate support member 11 even when air leakage occurs in some areas.

溝38,39,40を取り囲むようにして、溝42が基板支持部材11に形成されている。溝42は、基板1の外周に合わせた位置に設けられている。図10Cに示すように、基板1の外周縁は溝42内に位置しているので、この外周縁と溝42との機械的な「ひっかかり」が、基板1を保持する助けとなる。したがって、この溝42も固定支持機構に含めることができる。また、溝42が存在することにより、基板1とフォトマスク2とが密着するとき、基板1の外周縁が溝42内に逃げることができるので、基板1の外周縁によってフォトマスク2が傷ついたり割れたりすることを防止できる。   A groove 42 is formed in the substrate support member 11 so as to surround the grooves 38, 39, and 40. The groove 42 is provided at a position matching the outer periphery of the substrate 1. As shown in FIG. 10C, since the outer peripheral edge of the substrate 1 is located in the groove 42, the mechanical “cracking” between the outer peripheral edge and the groove 42 helps to hold the substrate 1. Therefore, this groove 42 can also be included in the fixed support mechanism. Further, when the substrate 1 and the photomask 2 are in close contact with each other due to the presence of the groove 42, the outer peripheral edge of the substrate 1 can escape into the groove 42, so that the photomask 2 is damaged by the outer peripheral edge of the substrate 1. It can be prevented from cracking.

図10Cには、断面が四角形状の溝を示したが、図10Dに示すように、溝38,39,40,42は、断面がV字形をしていてもよい。   Although FIG. 10C shows a groove having a quadrangular cross section, as shown in FIG. 10D, the grooves 38, 39, 40, and 42 may have a V-shaped cross section.

なお、図1ないし図3に示した露光装置の変形例として、第一の変形機構24および第二の変形機構25をロッド22,23の内側に配置し、ロッド22,23の下端に引っ張り力を付与することにより基板支持部材11の側縁部20,21にモーメントを与えるようにした露光装置も、本発明の範囲内のものである。   As a modification of the exposure apparatus shown in FIGS. 1 to 3, a first deformation mechanism 24 and a second deformation mechanism 25 are disposed inside the rods 22 and 23, and a tensile force is applied to the lower ends of the rods 22 and 23. An exposure apparatus in which a moment is applied to the side edges 20 and 21 of the substrate support member 11 by applying the above is also within the scope of the present invention.

図1ないし図3に示した露光装置のさらに別の変形例として、ロッド22,23の下端に押圧力と引っ張り力との双方を付与可能とされ、基板支持部材11の側縁部20,21に正および負のモーメントを選択的に与えるようにした露光装置も、本発明の範囲内のものである。   As still another modification of the exposure apparatus shown in FIGS. 1 to 3, both the pressing force and the pulling force can be applied to the lower ends of the rods 22 and 23, and the side edges 20 and 21 of the substrate support member 11 are provided. An exposure apparatus in which positive and negative moments are selectively given to is also within the scope of the present invention.

Claims (18)

パターンが描かれたフォトマスクを、表面に感光層が形成された基板の感光層を覆う位置に配置し、前記フォトマスクと前記基板とを互いに均一に接触させた後、前記フォトマスクを通して前記基板の感光層に光を照射することにより前記パターンを前記基板に転写する露光方法において、
全体として四角形状をしており、互いに対向する第一の対の側縁部と互いに対向する第二の対の側縁部とを有する板状の基板支持部材を用意し、
前記フォトマスクの前記パターンが描かれた表面に前記感光層が対向するようにして、前記基板を、前記基板支持部材の主面に、相対的なずれを生じさせることなく固定支持させ、
前記基板支持部材を、前記第一の対の側縁部と同じ方向に延びる第一の軸、又は、前記第二の対の側縁部と同じ方向に延びる第二の軸を中心として、個別に湾曲量を制御しながら湾曲させることにより、前記基板支持部材を前記基板と共に所望の湾曲形状に変形させ、
前記フォトマスクと前記基板とが互いに均一に接触しており、且つ、前記基板支持部材および前記基板が前記所望の湾曲形状に変形した状態で、前記フォトマスクを通して前記感光層に光を照射することにより、前記パターンの寸法を実質的に変化させて前記基板に転写することを特徴とする、露光方法。
A photomask on which a pattern is drawn is disposed at a position covering the photosensitive layer of the substrate having a photosensitive layer formed on the surface, and the photomask and the substrate are brought into uniform contact with each other, and then the substrate is passed through the photomask. In the exposure method of transferring the pattern to the substrate by irradiating light to the photosensitive layer of
A plate-like substrate support member having a rectangular shape as a whole and having a first pair of side edges facing each other and a second pair of side edges facing each other is prepared,
The substrate is fixedly supported on the main surface of the substrate support member without causing a relative shift so that the photosensitive layer faces the surface on which the pattern of the photomask is drawn,
The substrate support members are individually arranged around a first axis extending in the same direction as the first pair of side edges or a second axis extending in the same direction as the second pair of side edges. The substrate support member is deformed into a desired curved shape together with the substrate by bending the substrate while controlling the amount of bending,
Irradiating light to the photosensitive layer through the photomask in a state where the photomask and the substrate are in uniform contact with each other and the substrate support member and the substrate are deformed into the desired curved shape. To transfer the pattern onto the substrate while substantially changing the dimension of the pattern.
前記基板支持部材を前記第一の軸を中心として、または、前記第二の軸を中心として湾曲させる際、前記第一および第二の軸の各々に沿った複数位置で前記基板支持部材の湾曲量を個別に制御することを特徴とする、請求項1に記載の露光方法。When the substrate support member is bent about the first axis or about the second axis, the substrate support member is bent at a plurality of positions along each of the first and second axes. 2. The exposure method according to claim 1, wherein the amount is individually controlled. 前記第一の軸を中心とする前記基板支持部材の湾曲は、前記第一の対の側縁部に力またはモーメントを作用させることにより行われ、前記第二の軸を中心とする湾曲は、前記第二の対の側縁部に力またはモーメントを作用させることにより行われる、請求項1または2に記載の露光方法。The bending of the substrate support member about the first axis is performed by applying a force or moment to the side edges of the first pair, and the bending about the second axis is The exposure method according to claim 1, wherein the exposure method is performed by applying a force or a moment to the side edges of the second pair. 前記フォトマスクと前記基板との互いに対応する位置にそれぞれ複数の位置合わせマークが設けられており、該位置合わせマークをマーク検出手段によって検出し、検出したデータを基に、前記フォトマスクの前記位置合わせマークと前記基板の前記位置合わせマークとの間のピッチのずれ量を演算し、この演算結果に従って前記基板支持部材の湾曲量を制御する、請求項1ないし3のいずれかに記載の露光方法。A plurality of alignment marks are provided at positions corresponding to each other on the photomask and the substrate, the alignment marks are detected by a mark detection unit, and the position of the photomask is based on the detected data. 4. The exposure method according to claim 1, wherein a deviation amount of a pitch between the alignment mark and the alignment mark of the substrate is calculated, and a curvature amount of the substrate support member is controlled according to the calculation result. . 前記マーク検出手段がCCDカメラである、請求項4に記載の露光方法。The exposure method according to claim 4, wherein the mark detection means is a CCD camera. 前記フォトマスク上に前記パターンを大きめに作成し、露光時には、前記基板支持部材を前記基板と共に前記フォトマスクに対して凸状に湾曲させることにより、前記基板の前記感光層が形成された面の寸法を実質的に拡大させて所定の大きさにし、且つ、前記フォトマスクを前記基板に倣わせることにより、前記パターンの寸法を実質的に縮小させて所定の大きさにし、その後、前記パターンを前記基板に転写する、請求項1ないし5に記載の露光方法。The pattern is made larger on the photomask, and at the time of exposure, the substrate support member is curved together with the substrate in a convex shape with respect to the photomask so that the surface of the substrate on which the photosensitive layer is formed is formed. The size is substantially enlarged to a predetermined size, and the photomask is made to follow the substrate to substantially reduce the size of the pattern to a predetermined size, and then the pattern. The exposure method according to claim 1, wherein the process is transferred to the substrate. パターンが描かれたフォトマスクと感光層が形成された基板とを互いに均一に接触させた後、前記フォトマスクを通して前記基板の感光層に光を照射することにより前記パターンを前記基板に転写する露光方法に用いられる露光装置であって、
前記感光層が形成された面と反対側の前記基板の面全体にわたって前記基板を固定支持するための基板支持部材にして、互いに対向する第一の対の側縁部と、互いに対向する第二の対の側縁部と、前記基板を相対的なずれを生じさせることなく固定支持するための固定支持機構とを有する基板支持部材と、
前記パターンが描かれた前記フォトマスクの表面が前記感光層に対向するように前記フォトマスクを支持するためのフォトマスク支持部材と、
前記フォトマスクが前記基板に対して均一に接触して倣うように前記基板支持部材と前記フォトマスク支持部材とを互いに相対移動させるための駆動機構と、
前記基板支持部材の前記第一の対の側縁部に沿って設けられた複数の第一の作用点と、
前記複数の第一の作用点に対して力またはモーメントを作用させることにより、前記基板支持部材を前記基板とともに前記第一の対の側縁部と同じ方向に延びる第一の軸を中心として湾曲させるための第一の変形機構と、
前記基板支持部材の前記第二の対の側縁部に沿って設けられた複数の第二の作用点と、
前記複数の第二の作用点に対して力またはモーメントを作用させることにより、前記基板支持部材を前記基板とともに前記第二の対の側縁部と同じ方向に延びる第二の軸を中心として湾曲させるための第二の変形機構と、
前記駆動機構の作動時に前記基板支持部材と前記フォトマスク支持部材との相対移動を案内するためのガイド機構と、
前記フォトマスクを通して前記基板の前記感光層に光を照射するための光照射装置と、
を備えている、露光装置。
An exposure in which a photomask on which a pattern is drawn and a substrate on which a photosensitive layer is formed are brought into uniform contact with each other, and then the pattern is transferred to the substrate by irradiating light to the photosensitive layer of the substrate through the photomask. An exposure apparatus used in a method,
A substrate supporting member for fixing and supporting the substrate over the entire surface of the substrate opposite to the surface on which the photosensitive layer is formed, and a first pair of side edges facing each other and a second facing each other A substrate support member having a pair of side edges and a fixed support mechanism for fixing and supporting the substrate without causing relative displacement,
A photomask support member for supporting the photomask such that the surface of the photomask on which the pattern is drawn faces the photosensitive layer;
A drive mechanism for moving the substrate support member and the photomask support member relative to each other so that the photomask uniformly contacts and follows the substrate;
A plurality of first operating points provided along side edges of the first pair of the substrate support members;
By applying a force or moment to the plurality of first action points, the substrate support member is curved with the substrate as a center about a first axis extending in the same direction as the side edges of the first pair. A first deformation mechanism for causing
A plurality of second operating points provided along side edges of the second pair of the substrate support members;
By applying a force or moment to the plurality of second action points, the substrate support member is curved with the substrate as a center about a second axis extending in the same direction as the second pair of side edges. A second deformation mechanism for causing
A guide mechanism for guiding relative movement between the substrate support member and the photomask support member during operation of the drive mechanism;
A light irradiation device for irradiating the photosensitive layer of the substrate with light through the photomask;
An exposure apparatus comprising:
前記第一の変形機構が、前記複数の第一の作用点のそれぞれにおいて、作用させる力またはモーメントの大きさを所定の量に制御可能となされており、
前記第二の変形機構が、前記複数の第二の作用点のそれぞれにおいて、作用させる力またはモーメントの大きさを所定の量に制御可能となされている、
請求項7に記載の露光装置。
The first deformation mechanism can control the magnitude of the force or moment to be applied to a predetermined amount at each of the plurality of first action points.
The second deformation mechanism can control the magnitude of the force or moment to be applied to a predetermined amount at each of the plurality of second action points.
The exposure apparatus according to claim 7.
前記第一の変形機構または前記第二の変形機構がモータを備えている、
請求項7または8に記載の露光装置。
The first deformation mechanism or the second deformation mechanism includes a motor.
The exposure apparatus according to claim 7 or 8.
前記第一の変形機構または前記第二の変形機構が、空気圧力で駆動される機構を備えている、
請求項7または8に記載の露光装置。
The first deformation mechanism or the second deformation mechanism includes a mechanism driven by air pressure.
The exposure apparatus according to claim 7 or 8.
前記フォトマスクと前記基板との互いに対応する位置にそれぞれ設けられた、複数の位置合わせマークを検出するためのマーク検出手段と、
前記マーク検出手段により検出したデータを基に、前記フォトマスクの前記位置合わせマークと前記基板の前記位置合わせマークとの間のピッチのずれ量を演算するための演算手段とを有し、
前記第一の変形機構および前記第二の変形機構の少なくとも一方が、前記演算手段の演算結果に従って、前記第一の作用点および前記第二の作用点の少なくとも一方に作用させる力またはモーメントの大きさを調整して前記基板支持部材の湾曲量を制御するようになされている、
請求項7ないし10のいずれかに記載の露光装置。
Mark detection means for detecting a plurality of alignment marks respectively provided at positions corresponding to each other of the photomask and the substrate;
Based on the data detected by the mark detection means, the calculation means for calculating the amount of deviation of the pitch between the alignment mark of the photomask and the alignment mark of the substrate,
The magnitude of the force or moment that at least one of the first deformation mechanism and the second deformation mechanism acts on at least one of the first action point and the second action point according to the calculation result of the calculation means. The amount of bending of the substrate support member is controlled by adjusting the thickness,
The exposure apparatus according to claim 7.
前記フォトマスク支持部材が、前記基板に対して接近および離反する方向への前記フォトマスクの所定量の移動を許容する構造を有する、
請求項7ないし11のいずれかに記載の露光装置。
The photomask support member has a structure that allows a predetermined amount of movement of the photomask in a direction approaching and separating from the substrate.
The exposure apparatus according to claim 7.
前記フォトマスク支持部材が、前記フォトマスクの前記フォトマスク支持部材の支持面内の位置を規制するための位置規制機構を有する、
請求項7ないし12のいずれかに記載の露光装置。
The photomask support member has a position regulating mechanism for regulating the position of the photomask within the support surface of the photomask support member;
The exposure apparatus according to claim 7.
前記固定支持機構が、前記基板支持部材の、前記基板を固定支持する面に形成された複数の溝または峰部を含む、
請求項7ないし13のいずれかに記載の露光装置。
The fixed support mechanism includes a plurality of grooves or ridges formed on a surface of the substrate support member that fixes and supports the substrate.
The exposure apparatus according to claim 7.
前記固定支持機構が、前記基板支持部材の、前記基板を固定支持する面に形成された複数の溝と、前記溝の底部に設けられ、負圧源に接続された少なくともひとつの真空吸引孔とを含む、
請求項7ないし13のいずれかに記載の露光装置。
A plurality of grooves formed on a surface of the substrate support member for fixing and supporting the substrate; and at least one vacuum suction hole provided at a bottom of the groove and connected to a negative pressure source; including,
The exposure apparatus according to claim 7.
前記複数の溝の底部に設けられた前記少なくともひとつの真空吸引孔が、溝ごとまたは複数の溝を含む群ごとの負圧源に接続されている、
請求項15に記載の露光装置。
The at least one vacuum suction hole provided at the bottom of the plurality of grooves is connected to a negative pressure source for each groove or for each group including the plurality of grooves,
The exposure apparatus according to claim 15.
前記基板支持部材の厚みが5mm以上である、
請求項7ないし16のいずれかに記載の露光装置。
The thickness of the substrate support member is 5 mm or more,
The exposure apparatus according to claim 7.
前記第一の変形機構および前記第二の変形機構が、前記基板支持部材を支持するためのベース部材に載置されている、
請求項7ないし17のいずれかに記載の露光装置。
The first deformation mechanism and the second deformation mechanism are mounted on a base member for supporting the substrate support member,
The exposure apparatus according to claim 7.
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