JP5526714B2 - Substrate exposure apparatus - Google Patents

Substrate exposure apparatus

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JP5526714B2
JP5526714B2 JP2009256833A JP2009256833A JP5526714B2 JP 5526714 B2 JP5526714 B2 JP 5526714B2 JP 2009256833 A JP2009256833 A JP 2009256833A JP 2009256833 A JP2009256833 A JP 2009256833A JP 5526714 B2 JP5526714 B2 JP 5526714B2
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JP2011102834A (en )
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かおり 半澤
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凸版印刷株式会社
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本発明は、フォトマスク上方から光を照射し、フォトマスクを通過した光にて、フォトマスクと所定の微小間隔をあけて対向する被露光基板にパターン露光を行う基板露光装置に関する。 The present invention is irradiated with light from the photomask above, in the light passing through the photomask, to a substrate exposure apparatus for performing a pattern exposure on the exposed substrate opposed spaced photomask with a predetermined small gap.

従来の基板露光装置は、感光性樹脂などからなる感光膜を表面に形成したガラスやプラスチックなどの基板(以下、被露光基板と記す)を上面に保持する露光ステージと、被露光基板の上方からパターン露光を行うために所定のパターンを有するフォトマスクを被露光基板と対向させて被露光基板の上面に保持するマスクホルダとを備える。 Conventional substrate exposure apparatus, a substrate such as glass or plastic photosensitive film formed on a surface made of a photosensitive resin (hereinafter, referred to as a substrate to be exposed) and an exposure stage for holding the upper surface of, from above the substrate to be exposed to face the substrate to be exposed to a photomask having a predetermined pattern to perform pattern exposure and a mask holder for holding the upper surface of the substrate to be exposed. パターン露光時にフォトマスクと被露光基板とを密着させる露光機もあるが、密着露光の場合、フォトマスクと被露光基板との間に入り込んだ異物などによりフォトマスクや被露光基板に傷が発生しやすい。 There is also an exposure apparatus for adhering the photo-mask and the exposed substrate at the time of pattern exposure, but for contact exposure, scratches are generated on the photomask and the exposed substrate by foreign matter that has entered between the photomask and the exposed substrate Cheap. そのため、パターン露光の際に、フォトマスクとガラス基板との間に所定の微小間隔(プロキシミティギャップ)をあけて、フォトマスク上方から光を照射して被露光基板にパターン露光を行う近接露光式の基板露光装置(プロキシミティ式露光機)が使用されるようになっている。 Therefore, when the pattern exposure, with a predetermined small gap between the photomask and the glass substrate (proximity gap), proximity exposure type of performing pattern exposure by irradiating light from the photomask above the exposed substrate substrate exposure apparatus (proximity type exposure apparatus) has come to be used.

しかし、近接式の基板露光装置の場合、フォトマスクの下方に隙間が有るため、パターン露光時にフォトマスクの自重によりフォトマスクに撓みが生じやすい。 However, when the near-type substrate exposure apparatus, because there is a gap below the photomask, the deflection on the photomask due to the weight of the photomask is likely to occur at the time of pattern exposure. 近年、特にサイズが大型化した液晶表示装置用CF(カラーフィルタ)基板を、着色感光性樹脂を用い、パターン露光、現像という一連のフォトリソ法を用いて製造するにあたっては、使用するフォトマスクも大型化している。 Recently, a particular size large-sized liquid crystal display device for CF (color filter) substrate, using a colored photosensitive resin, the pattern exposure, in manufacturing using a series of photolithography that development is large even photomask used It has turned into. フォトマスクが大型化した場合、当然のことながらフォトマスクの自重も重くなり、近接露光時のフォトマスクの撓みも大きくなってきている。 If the photo mask is enlarged, also it becomes heavier the weight of the photo-mask, of course, has become larger deflection of the photo mask at the time of proximity exposure. 近接露光時に、フォトマスクと被露光基板との間の距離(ギャップ)が部位によりバラツいた場合、パターン露光、現像で被露光基板に形成されるパターンの線幅や膜厚にバラツキを生じることになる。 During proximity exposure, if the distance between the photomask and the exposed substrate (gap) had Baratsu by site, pattern exposure, causing a variation in the line width and thickness of the pattern formed on the exposed substrate with a developer Become. 近年では、基板の大型化に伴うマスクの大型化、画素の高精細化に伴って撓み補正への要求が益々厳しくなっている。 In recent years, upsizing of the mask due to the larger substrate, a request to the correction deflection with the higher definition of the pixels are increasingly strict.

被露光基板が液晶表示装置用CF(カラーフィルタ)基板であった場合、パターン露光、現像で形成されたCF基板内のCF画素に線幅、膜厚のバラツキがあると、CF基板を組み込んだ液晶表示装置は、色のバラツキを生じるなど所望する表示性能を発揮できなくなる。 If the exposed substrate was CF (color filter) substrate for a liquid crystal display device, the pattern exposure and the CF pixels CF substrate formed by developing line width, there is a variation in the film thickness, incorporating a CF substrate the liquid crystal display device, can not exhibit the desired display performance such as causing color variations of. そのため、パターン露光時に、フォトマスクとCF基板間のギャップのばらつきを低減させる必要がある。 Therefore, at the time of pattern exposure, it is necessary to reduce the variation in the gap between the photomask and the CF substrate. 近接露光時に被露光基板とフォトマスクとのギャップにバラツキが生じる原因の一つにフォトマスクの自重による撓みがあるため、フォトマスクの自重による撓みを軽減するための装置や、方法が提案されている。 Since there is a deflection by its own weight of the photomask one of the causes of variation in the gap between the exposed substrate and the photomask during proximity exposure deflection device and to reduce due to the weight of the photomask, a method is proposed there.

従来の露光機では、図1の概略断面図に示すように、フォトマスク(原版)(10)はマスクホルダ(20)上の原版支持吸着溝(1)で真空固定されている。 In the conventional exposure apparatus, as shown in the schematic cross-sectional view of FIG. 1, a photomask (original) (10) are vacuum fixed by the mask holder (20) having original plate support suction grooves (1). このような従来の支持機構では、フォトマスクは外縁部分のみで支持されているため、自重によって撓みを生じて、中央部の露光ギャップ(70)が狭くなる問題があった。 In such a conventional support mechanism, the photomask because it is supported only at the outer edge portion, caused a deflection by its own weight, the exposure gap in the central portion (70) there has been a problem that becomes narrow. 特許文献1には、マスクを下方から支える支持部材と、この支持部材の支持点の外側において、マスクに対して上方から所定の圧力を加える重石の押圧手段を備えた露光装置が開示されている。 Patent Document 1, a support member for supporting the mask from below, outside the support point of the support member, an exposure apparatus is disclosed which includes a pressing means of weigh applying a predetermined pressure from above the mask . また、特許文献2には、前記特許文献1開示されている技術と同様にしながら、両側2辺を保持するマスクホルダと、このマスクホルダに保持されるフォトマスクの両側の2辺の縁部をマスクの撓み量に応じて上方から可変で押圧する機構を有する基板露光装置が提案されている。 Further, Patent Document 2, while the same manner as in the technique of the being Patent Document 1 discloses a mask holder for holding both sides two sides, the two sides of the edge portions on both sides of a photomask which is held in the mask holder substrate exposure apparatus having a mechanism for pressing a variable from above in accordance with the deflection amount of the mask has been proposed. ここで、撓み補正機構としては、マスクの外側の連結部材の上面に所定の間隔で設けられた複数の押さえ部材のベアリング状の樹脂からなる先端部でマスクの縁を押さえ、連結部材全体を下降させることで先端部にてマスクの縁部を押圧し、梃の原理でマスクの中央部を持ち上げて、撓みと相殺して全体として略平らになる様にしていた。 Here, the deflection as a correction mechanism, holding the edges of the mask at the tip consisting of a bearing-like resin of the plurality of pressing members provided at predetermined intervals on the upper surface of the connecting member outside of the mask, lowering the entire connecting member pressing the edge of the mask at the distal end portion by which lifts the central portion of the mask on the principle of lever, has in the manner to be substantially flat as a whole after deduction of deflection.

また、近年では、基板の大型化に伴うマスクの大型化、画素の高精細化に伴って撓み補正への要求が厳しくなり、また補正用の押さえ部材の耐久性を増すために、例えば、特許文献3で開示されているように、超高分子量ポリエチレンを接触部位とした補正バーでマスクの縁部を上から荷重をかける形で押圧するCF用基板露光装置が用いられている。 In recent years, upsizing of the mask due to the larger substrate, a request to the correction deflection with the higher definition of the pixels are strict, and in order to increase the durability of the pressing member for correction, for example, patent as disclosed in Document 3 CF substrate exposure apparatus for pressing in a manner to apply a load from above is used the edges of the mask the correction bar was contacted portion ultra high molecular weight polyethylene.

しかし、上記した特許文献1〜3で示された技術は、特別な周辺機材が別途必要となり、装置自体が複雑なものとなり、コストも高くつくと言う問題があった。 However, the techniques disclosed in Patent Documents 1 to 3 described above, it is additionally required special peripheral equipment, apparatus itself becomes complicated, there is a problem that the cost high. また、撓み補正バーによってマスク撓みがある程度矯正され、露光ギャップのバラツキは軽減できるが、撓み補正バーの劣化等により、面内の露光ギャップに変化が生じることがある。 Also, to some extent corrected deflection mask by the deflection correction bars, variation of exposure gap can be reduced, due to a reduction of the deflection correction bar, there is a change in the exposure gap plane occurs. 前記したように、面内の露光ギャップのバラツキが大きくなると、フォトリソ特性(線幅、膜厚)、あるいはパターン転写精度等の品質にマイナスの影響が生じる。 As described above, the variation of exposure gap in the surface increases, photolithography characteristics (line width, thickness), or negative impact on the quality such as pattern transfer accuracy. また、CFを構成する各層の重ね合わせ精度も悪くなり、オフセット調整に時間がかかり、時間稼動率低下に繋がる。 Further, deteriorates even overlay accuracy of each layer constituting the CF, it takes time to offset adjustment, leading to reduced time operating rate. そのため、このバラツキを軽減するために、撓み補正バーの定期的な交換が必要となる等の問題点があった。 Therefore, in order to reduce this variation, periodic replacement of the deflection correction bar there is a problem such as are required.

特開平09−306832号公報 JP 09-306832 discloses 特開2001−109160号公報 JP 2001-109160 JP 特開2009−260172号公報 JP 2009-260172 JP

本発明は、上記問題点に鑑みなされたもので、構造が単純であり、撓み補正に特別な周辺機材を準備することなく、被露光基板とフォトマスクとの近接露光時のギャップのバラツキを低減させ、それにより被露光基板に形成されるパターンの線幅、膜厚バラツキの低減を図ることを可能とする基板露光装置の提供を課題としている。 The present invention has been made in view of the above problems, the structure is simple, without preparing a special peripheral equipment deflection correction, reduce the variation in the gap at the time of proximity exposure with the exposed substrate and the photomask It is, and thereby the line width of the pattern formed on the exposed substrate, an object of the invention to provide a substrate exposure apparatus which makes it possible to reduce the thickness variation.

本発明の請求項1に係る発明は、感光膜を形成した被露光基板を上面に保持する露光ステージと、前記被露光基板の上方からパターン露光を行うため平面視矩形状のフォトマスク(原版)を前記被露光基板に対向させて前記被露光基板の上面に保持するマスクホルダとを備え、前記フォトマスクと被露光基板との間に所定の微小間隔をあけて、前記フォトマスク上方から光を照射して前記被露光基板にパターン露光を行う基板露光装置において、前記露光ステージは、前記フォトマスクと同じ撓み量を有する溶融石英ガラスまたは合成石英ガラスからなることを特徴とする基板露光装置である。 The invention according to claim 1 of the present invention, an exposure stage that holds a substrate to be exposed forming a photosensitive film on the upper surface, rectangular in plan view of a photomask for performing pattern exposure from above the substrate to be exposed (original) It was allowed to face the substrate to be exposed and a mask holder for holding the upper surface of the substrate to be exposed, at a predetermined small gap between the photomask and the substrate to be exposed, the light from the photomask upper in the substrate exposure apparatus for performing a pattern exposure on the substrate to be exposed by irradiating the exposure stage is a substrate exposure apparatus characterized by comprising a fused quartz glass or synthetic quartz glass having the same deflection amount as the photomask .

また、本発明の請求項2に係る発明は、前記露光ステージは、その2辺を露光ステージ支持具で担持され、前記露光ステージ支持具は可動で、2辺間の担持間隔(スパン)を変化させて、前記露光ステージの撓み量を可変とする機構を具備することを特徴とする請求項1に記載する基板露光装置である。 The invention according to claim 2 of the present invention, the exposure stage is carried to the two sides at the exposure stage support, said exposure stage support is movable, changing the carrier spacing between the two sides (span) by a substrate exposure apparatus according to claim 1, characterized in that it comprises a mechanism for varying the deflection amount of the exposure stage.

本発明の基板露光装置では、露光ステージを、露光用のフォトマスクと同じ撓み量にすることにより、フォトマスクと露光ステージ上に保持された被露光基板との距離(露光ギャップ)を均一とすることが出来る。 In the substrate exposure apparatus of the present invention, the exposure stage, by the same deflection amount as the photomask for exposure, the distance between the substrate to be exposed, which is held on a photomask and an exposure stage (exposure gap) uniform it can be. それにより被露光基板に形成されるパターンの線幅、膜厚バラツキの低減を図ることが可能となる。 Whereby line width of the pattern formed on the exposed substrate, it is possible to reduce the thickness variation.

また、本発明の基板露光装置では、露光ステージは2辺を露光ステージ支持具で担持され、その露光ステージ支持具を移動させることで、2辺間の担持間隔(スパン)を変化させて、前記フォトマスクの撓み量に合わせて、前記露光ステージの撓み量を調整する機構を有している。 In addition, the substrate exposure apparatus of the present invention, the exposure stage is carried two sides at the exposure stage support, by moving the exposure stage support, changing the carrier spacing between the two sides (span), the in accordance with the deflection amount of the photomask, and has a mechanism for adjusting the deflection amount of the exposure stage. そのため、使用するフォトマスクに合わせて、例えば、厚みあるいは寸法が異なり撓み量が異なるフォトマスクに合わせて露光ステージの撓み量を変更することが可能である。 Therefore, in accordance with the photomask used, for example, it is possible to change the amount of deflection of the exposure stage deflection amount different thickness or dimensions to suit different photomasks. そのため、従来の撓み補正バーでのフォトマスクへの強制的な撓み量の矯正が不要となる。 Therefore, correction of forced deflection amount of the photomask in the conventional deflection correction bar is not required. その結果、フォトマスクの傷みが少なく、撓み補正バーの劣化による品質への影響が軽減される。 As a result, there is little damage to the photo-mask, the impact on the quality due to the deterioration of the deflection correction bar is reduced. 本発明の基板露光装置によれば、被露光基板とフォトマスクとの近接露光時のギャップのバラツキが低減され、パターン露光、現像後に得られる感光膜パターンの線幅、膜厚等の品質バラツキを低減することができる。 According to the substrate exposure apparatus of the present invention, is reduced the variation in the gap at the time of proximity exposure with the exposed substrate and the photomask, the pattern exposure, the line width of the photoresist pattern obtained after development, the quality variation of the film thickness and the like it can be reduced.

従来の基板露光装置での、マスク撓み補正を断面で説明する概略図。 Schematic view illustrating the conventional substrate exposure apparatus, the mask deflection correction in cross-section. 本発明の露光装置の一実施形態での要部を示し、フォトマスク撓みと露光ステージ撓みを断面で説明する概略図。 It shows a main portion of an embodiment of an exposure apparatus of the present invention, a schematic diagram for explaining the deflection and exposure stage deflection photomask in cross-section.

以下、本発明に係る基板露光装置の実施形態の一例を、液晶表示装置用CF(カラーフィルタ)基板を例に取り、図面を参照して説明する。 Hereinafter, an example of an embodiment of a substrate exposure apparatus according to the present invention, takes a CF (color filter) substrate for a liquid crystal display device as an example will be described with reference to the drawings.

図2は、本発明の基板露光装置の一例の要部を示し、フォトマスク撓みと露光ステージ撓みを断面で説明する概略図であり、フォトマスク(10)の短辺方向から見た側面図である。 Figure 2 shows an example main part of the substrate exposure apparatus of the present invention, a schematic view illustrating the flexure and the exposure stage deflection photomask in cross-section in side view from the short side direction of the photomask (10) is there. すなわち、感光性樹脂などからなる感光膜を表面に形成したガラス基板等の被露光基板(50)を上面に保持する露光ステージ(60)と、被露光基板(50)の上方からパターン露光行うため平面視矩形状のフォトマスク(10)を通常長手方向の2辺の両端で保持し、被露光基板(50)の上方で被露光基板(50)と対向させるマスクホルダ(20)とを備え、フォトマスク(10)と被露光基板(50)との間に所定の微小間隔の露光ギャップ(70)をあけて、フォトマスク(10)の上方に位置する光源(図示せず)から平行光を照射して、被露光基板(50)にパターン露光を行う基板露光装置である。 That is, an exposure stage that holds a substrate to be exposed such as a glass substrate having a photosensitive layer made of photosensitive resin formed on the surface (50) on the upper surface (60), for performing pattern exposure from above the substrate to be exposed (50) It holds rectangular shape in plan view of the photomask (10) at both ends of the normal longitudinal direction of the two sides, and a mask holder for opposing the upwardly exposed substrate of a substrate to be exposed (50) (50) (20), the photomask (10) at a gap (70) exposing a predetermined small gap between the substrate to be exposed (50), the parallel light from a light source (not shown) located above the photomask (10) by irradiating a substrate exposure apparatus for performing a pattern exposure on the exposed substrate (50).

本発明の基板露光装置の露光ステージ(60)は、使用するフォトマスク(10)と略同じ撓み量を有する材料で構成される。 Exposure stage substrate exposure apparatus of the present invention (60) is made of a material having substantially the same deflection amount as the photomask (10) to be used. この露光ステージ(60)は、例えば、フォトマスク(10)の2辺に対向する2辺を露光ステージ支持具(80)で担持される。 The exposure stage (60), for example, carried the two sides facing the two sides of the photomask (10) in the exposure stage support (80). 露光ステージ支持具(80)の少なくとも一方は可動で、その露光ステージ支持具(80)を移動させることで、2辺間の担持間隔(スパン)を変化させて、フォトマスク(10)の撓み量に合わせて、露光ステージ(60)の撓み量を調整する機構を有している。 In at least one movable exposure stage support (80), by moving the exposure stage support (80), by changing the carrier spacing between the two sides (span), the amount of deflection of the photomask (10) together, the has a mechanism for adjusting the amount of deflection of the exposure stage (60). そのため、例えば、厚みあるいは寸法が異なり撓み量が異なるフォトマスクに合わせて露光ステージの撓み量を変更することが可能である。 Therefore, for example, it is possible to change the amount of deflection of the exposure stage deflection amount different thickness or dimensions to suit different photomasks.

本実施形態では、露光ステージにフォトマスクと同じ材質の、厚さ8〜10mmの溶融石英ガラスまたは合成石英ガラスからなる矩形板状素材が使用できる。 In the present embodiment, the same material as the photomask to the exposure stage, a rectangular plate-like material made of fused quartz glass or synthetic quartz glass having a thickness of 8~10mm be used. この矩形板状素材の撓み量は下記数式(1)により算出することができる。 The amount of deflection of the rectangular plate-shaped material can be calculated by the following equation (1).

W=k(ρ/E)(l /t ) ・・・数式(1) W = k (ρ / E) (l 4 / t 2) ··· Equation (1)
ここで、W:自重撓み量、E:ヤング[GPa]、k:定数(熱膨張係数[10 −7 /℃])、l:担持スパン[mm]、ρ:密度[g/cm ]、t:板厚[mm] Here, W: own weight bending amount, E: Young [GPa], k: constant (thermal expansion coefficient [10 -7 / ℃]), l: bearing span [mm], ρ: Density [g / cm 3], t: plate thickness [mm]
本発明の基板露光装置を、現行の装置において使用する場合は、フォトマスク保持位置、露光ステージ板厚は一定とし、少なくとも一方の可動な露光ステージ支持具(80)を移動させることで、2辺間の担持間隔(スパン)lを変更することで、フォトマスク(10)の撓み量に合わせて、露光ステージ(60)の撓み量を調整する。 The substrate exposure apparatus of the present invention, when used in the current device, a photomask holding position, an exposure stage plate thickness is constant, by moving at least one movable exposure stage support (80), two sides by changing the carrier interval (span) l between, in accordance with the amount of deflection of the photomask (10) to adjust the amount of deflection of the exposure stage (60).

本発明の基板露光装置では、通常フォトマスク(10)の両側2辺を真空吸着によって固定する原版支持吸着溝(1)を備えている。 In the substrate exposure apparatus of the present invention includes an original supporting suction grooves (1) for fixing the normal sides two sides of the photomask (10) by vacuum suction. 原版支持吸着溝(1)は、図示しない真空吸引装置に連結されたφ2mmの吸引穴で構成されている。 Original supporting suction grooves (1) is composed of suction holes of φ2mm connected to a vacuum suction device (not shown). 真空吸引装置で発生した吸引力は、原版支持吸着溝(1)でフォトマスク(10)を固定する。 Suction force generated by the vacuum suction device for fixing the photomask (10) with the original supporting suction grooves (1). なお、本実施形態の例ではフォトマスクの寸法は長辺方向が550mm、短辺方向が450mmとしたが、フォトマスクの寸法は、これより大きくても構わない。 The size of the photomask in the example of the present embodiment has a long side direction 550 mm, but shorter side direction was set to 450 mm, the dimensions of the photomask, or may be greater than this. また、真空吸引用の溝の形状および間隔は上記数値に限定されるものではなく、フォトマスクの寸法、厚みおよび形状によって選択できるのは言うまでもない。 The shape and spacing of the grooves for the vacuum suction is not limited to the above figures, the dimensions of the photomask, it is needless to say can be selected by the thickness and shape.

前述したように、露光装置にセットするフォトマスクの種類によって、フォトマスクの自重によりフォトマスクに生じる撓みの形態(撓み量、撓みが生じる部位など)は異なる。 As described above, according to the type of a photomask set in an exposure apparatus, by the weight of the photomask form of deflection occurring to the photomask (amount of deflection, such as site-deflection occurs) are different. 本発明の基板露光装置では、フォトマスクの撓みをあえて補正せず、露光ステージをフォトマスクと同じように撓ませることで、露光ギャップを安定な領域に収めるものであっる。 In the substrate exposure apparatus of the present invention does not dare correct the deflection of the photomask, the exposure stage by deflecting in the same way as the photomask, Arru in which keep the exposure gap in a stable region. 図では、説明の都合上、撓みを大きく示しているが、フォトマスクおよび露光ステージともに剛性の高い材料を用いているため、本発明の基板露光装置における双方の撓みに伴う露光ギャップのバラツキは極小となる。 In the figure, for convenience of description, while indicating large deflection, due to the use of a material having high rigidity in both the photomask and exposing stage, the variation of exposure gap due to the bending of both the substrate exposure apparatus of the present invention is minimum to become.

以下に、本発明の具体的実施例について説明する。 Hereinafter, a description of a specific embodiment of the present invention.

<評価条件> <Evaluation criteria>
基本的な露光条件として、以下の条件を設定した。 As a basic exposure conditions, it has set the following conditions.
フォトマスク :10mm厚合成石英マスク(ヤング率74GPa) Photo mask: 10mm thick synthetic quartz mask (Young's modulus 74GPa)
寸法450×550mm Dimensions 450 × 550mm
測定基板 :素ガラス、寸法400×500mm、厚み0.6mm Measurement board: raw glass, dimensions 400 × 500 mm, thickness 0.6mm
露光ステージ :寸法420×520mm Exposure stage: dimensions 420 × 520mm
設定露光ギャップ : 100μm。 Setting exposure gap: 100μm.

<面内露光ギャップ分布評価> <Plane exposure gap distribution evaluation>
図1(a)に示す、従来の基板露光装置を用いて(条件1)、マスクホルダの原版支持吸着溝1でフォトマスクを吸着固定し、対向する被露光基板とフォトマスクとの距離(ギャップ)の測定を行った。 Shown in FIG. 1 (a), using a conventional substrate exposure apparatus (condition 1), a photomask was adsorbed and fixed by the original supporting suction grooves 1 of the mask holder, the distance between the opposing substrate to be exposed and the photo mask (gap the measurement of) were carried out. なお、ギャップの測定は、フォトマスクの中央部分を通過し辺に直角に交わる線上25箇所のポイントにおいて行った。 The measurement of the gap was carried out at a point on the line 25 points intersecting at a right angle to pass through the central portion of the photomask side. その結果、(条件1)では、中央付近のギャップ値が小さく、フォトマスクの辺側のギャップ値が大きい状態となっていた。 As a result, has been a in (condition 1), the gap value near the center is small, the state value of the gap side of the photomask is large. ギャップのバラツキは37μmであった。 The variation of the gap was 37μm.

それに対して、本発明の基板露光装置を用いて(条件2)、露光ステージとして10mm厚の溶融石英ガラスを用い、担持スパン410mmとして、フォトマスクは上記条件( In contrast, by using a substrate exposure apparatus of the present invention (condition 2), using a 10mm thick fused quartz glass as the exposure stage, as support span 410 mm, photomask above conditions (
1)と同様にして、対向する被露光基板とフォトマスクとの距離(ギャップ)の測定を行った。 1) and in the same manner, it was measured distance (gap) between the opposing substrate to be exposed and the photomask. ギャップの測定は、同様に、フォトマスクの中央部分を通過し辺に直角に交わる線上25箇所のポイントにおいて行った。 Measurements of the gap, in turn, was carried out at a point on the line 25 points intersecting at a right angle to pass through the central portion of the photomask side. その結果、(条件2)では、中央付近のギャップ値とフォトマスクの辺側のギャップ値のバラツキが少なく、ギャップのバラツキは12μmと減少していた。 As a result, in the (condition 2), small variations in the side of the gap value of the gap value and the photomask in the vicinity of the center, the variation of the gap was reduced with 12 [mu] m.

1・・・原版支持吸着溝 10・・・フォトマスク 20・・・マスクホルダ50・・・被露光基板 60・・・露光ステージ 70・・・露光ギャップ80・・・露光ステージ支持具 1 ... original supporting suction grooves 10 ... photomask 20 ... mask holder 50 ... substrate to be exposed 60 ... exposure stage 70 ... exposure gap 80 ... exposure stage support

Claims (2)

  1. 感光膜を形成した被露光基板を上面に保持する露光ステージと、前記被露光基板の上方からパターン露光を行うため平面視矩形状のフォトマスク(原版)を前記被露光基板に対向させて前記被露光基板の上面に保持するマスクホルダとを備え、前記フォトマスクと被露光基板との間に所定の微小間隔をあけて、前記フォトマスク上方から光を照射して前記被露光基板にパターン露光を行う基板露光装置において、前記露光ステージは、前記フォトマスクと同じ撓み量を有する溶融石英ガラスまたは合成石英ガラスからなることを特徴とする基板露光装置。 An exposure stage that holds a substrate to be exposed forming a photosensitive layer on an upper surface, said to be opposed rectangular in plan view of the photomask (the original) to the substrate to be exposed for performing pattern exposure from above the substrate to be exposed under a mask holder for holding the upper surface of the exposed substrate, a predetermined spaced small distance, pattern exposure the by irradiating light from the photomask above the substrate to be exposed between the photomask and the exposed substrate in the substrate exposure apparatus which performs the exposure stage, a substrate exposure apparatus characterized by comprising a fused quartz glass or synthetic quartz glass having the same deflection amount as the photomask.
  2. 前記露光ステージは、その2辺を露光ステージ支持具で担持され、前記露光ステージ支持具は可動で、2辺間の担持間隔(スパン)を変化させて、前記露光ステージの撓み量を可変とする機構を具備することを特徴とする請求項1に記載する基板露光装置。 The exposure stage is carried to the two sides at the exposure stage support, said exposure stage support is movable, by changing the carrier spacing between the two sides (span), and varies the amount of deflection of the exposure stage substrate exposure apparatus according to claim 1, characterized in that it comprises a mechanism.
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