JP5053855B2 - 高出力半導体デバイスのための半導体構造体の作成方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Description
本出願は、2004年10月27日提出の米国仮特許出願第60/622201号の優先権の利益を主張するものであり、該仮特許出願を本明細書中で明白に参考として援用する。
発明の分野
本発明は、一般に半導体構造体、より詳細には、高出力半導体デバイスのための基材配置物に関する。
例えばSi(ケイ素)およびGaN(窒化ガリウム)から作成される半導体デバイスは、基材上に製作される。さまざまな前記デバイスは、非常に高い出力密度で作動する高出力デバイスである。そのような高出力デバイスの例としては、2〜3例を挙げると、電源スイッチ、増幅器、GaN系マイクロ波集積回路およびレーザーが挙げられる。これらのデバイスには、これらにより発生する熱を放散させるための低耐熱性チャンネルが必要である。
発明の概要
半導体構造体の作成方法は、炭化ケイ素ウエハを提供する段階と、該ウエハの表面上にケイ素層を付着させる段階とを包含する。ケイ素第1層、ケイ素酸化物中間層およびケイ素第3層を有するシリコン・オン・インシュレーター構造体が、そのケイ素第3層を、ウエハの表面上にあるケイ素付着層に接着している。ケイ素第1層をシリコン・オン・インシュレーター構造体から除去した後、ケイ素酸化物中間層を除去して、ケイ素第3層を曝露する。少なくとも1つの半導体デバイスを、曝露されたケイ素第3層上に製作する。
図1Aにおいて、表面11を有するウエハ10は、その高い熱伝導性に起因して本明細書中で利用されるSiC(炭化ケイ素)ウエハである。SiCウエハ10は、高温における長期間の信頼できる作動を保証する極度の熱安定性を示す。SiCウエハ10は、容易に入手可能な4Hもしくは6Hポリタイプでできていることができ、または、続いて施用される半導体デバイスによっては、ポリ3−C SiC(多結晶質立方晶系SiC)を用いることもできる。この後者の材料は4Hおよび6Hポリタイプより価格が安いという利点を有し、より大きな直径サイズで製作され市販されている。
Claims (7)
- 半導体構造体の作成方法であって、
炭化ケイ素ウエハを提供する段階;
前記ウエハの表面上にケイ素層を付着させる段階;
ケイ素第1層、ケイ素酸化物中間層およびケイ素第3層を有するシリコン・オン・インシュレーター構造体を提供する段階;
前記ケイ素第3層を、前記ウエハの前記表面上にある前記ケイ素付着層に接着する段階であって、該接着する段階が、
10nm未満の表面粗さまで、前記ケイ素第3層を研磨し、前記ウエハの前記表面上にある前記ケイ素付着層を研磨し;そして
前記研磨した表面を接合し、加圧する、
段階を含む、接着する段階;
前記ケイ素第1層を前記シリコン・オン・インシュレーター構造体から除去する段階;
前記ケイ素酸化物中間層を前記シリコン・オン・インシュレーター構造体から除去して、前記ケイ素第3層を曝露する段階;および
少なくとも1つの半導体デバイスを、前記曝露されたケイ素第3層上に製作する段階、
を含む、前記方法。 - 前記炭化ケイ素ウエハを、多結晶質立方晶系炭化ケイ素ならびに4Hおよび6Hポリタイプからなる群より選択する段階を包含する、請求項1に記載の方法。
- 前記ケイ素層を、非晶質ケイ素およびポリシリコンからなる群より選択する段階を包含する、請求項1に記載の方法。
- 得られた構造体を500〜1100℃でアニールする追加的段階を包含する、請求項1に記載の方法。
- 請求項1に記載の方法であって、
前記ケイ素第3層を曝露した後、前記曝露されたケイ素の一部の上にマスキング材料を付着させて、非曝露領域を残す段階;
前記非曝露領域中の前記ケイ素第3層および下にあるケイ素層を除去して、前記炭化ケイ素ウエハの表面を曝露する段階;
前記マスキング材料を除去する段階;
少なくとも1つの半導体デバイスを、前記曝露された炭化ケイ素ウエハ表面上に製作し、少なくとも1つの半導体デバイスを、前記曝露されたケイ素第3層の上に製作する段階、
を包含する、前記方法。 - 純粋な単結晶炭化ケイ素ウエハを提供する段階を包含する、請求項5に記載の方法。
- 4Hおよび6Hポリタイプからなる群より選択される純粋な単結晶炭化ケイ素ウエハを提供する段階を包含する、請求項6に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62220104P | 2004-10-27 | 2004-10-27 | |
US60/622,201 | 2004-10-27 | ||
PCT/US2005/038745 WO2006047675A1 (en) | 2004-10-27 | 2005-10-26 | A method of making a semiconductor structure for high power semiconductor devices |
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JP2008518484A JP2008518484A (ja) | 2008-05-29 |
JP5053855B2 true JP5053855B2 (ja) | 2012-10-24 |
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JP2007539103A Expired - Fee Related JP5053855B2 (ja) | 2004-10-27 | 2005-10-26 | 高出力半導体デバイスのための半導体構造体の作成方法 |
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US (1) | US7560322B2 (ja) |
EP (1) | EP1815511B1 (ja) |
JP (1) | JP5053855B2 (ja) |
AU (1) | AU2005299298B2 (ja) |
TW (1) | TW200631078A (ja) |
WO (1) | WO2006047675A1 (ja) |
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US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
US8029620B2 (en) * | 2006-07-31 | 2011-10-04 | Applied Materials, Inc. | Methods of forming carbon-containing silicon epitaxial layers |
JP4957297B2 (ja) * | 2007-03-06 | 2012-06-20 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US20090115052A1 (en) * | 2007-05-25 | 2009-05-07 | Astralux, Inc. | Hybrid silicon/non-silicon electronic device with heat spreader |
JP2009141093A (ja) | 2007-12-06 | 2009-06-25 | Toshiba Corp | 発光素子及び発光素子の製造方法 |
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JPH01179435A (ja) * | 1988-01-08 | 1989-07-17 | Nec Corp | シリコン薄膜形成方法 |
JPH0246770A (ja) * | 1988-08-08 | 1990-02-16 | Seiko Epson Corp | 半導体装置 |
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JPH10223870A (ja) * | 1997-02-04 | 1998-08-21 | Shin Etsu Handotai Co Ltd | 半導体装置製造用ウェーハ |
JPH10326884A (ja) * | 1997-03-26 | 1998-12-08 | Canon Inc | 半導体基板及びその作製方法とその複合部材 |
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US6388290B1 (en) * | 1998-06-10 | 2002-05-14 | Agere Systems Guardian Corp. | Single crystal silicon on polycrystalline silicon integrated circuits |
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FR2810448B1 (fr) * | 2000-06-16 | 2003-09-19 | Soitec Silicon On Insulator | Procede de fabrication de substrats et substrats obtenus par ce procede |
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JP2003282845A (ja) * | 2002-03-20 | 2003-10-03 | Mitsubishi Electric Corp | 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法 |
FR2864336B1 (fr) * | 2003-12-23 | 2006-04-28 | Commissariat Energie Atomique | Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci |
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2005
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- 2005-10-26 WO PCT/US2005/038745 patent/WO2006047675A1/en active Application Filing
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- 2005-10-26 AU AU2005299298A patent/AU2005299298B2/en not_active Ceased
- 2005-10-26 EP EP05815152.3A patent/EP1815511B1/en not_active Not-in-force
- 2005-10-27 TW TW094137729A patent/TW200631078A/zh unknown
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JP2008518484A (ja) | 2008-05-29 |
TW200631078A (en) | 2006-09-01 |
US20060088978A1 (en) | 2006-04-27 |
EP1815511A1 (en) | 2007-08-08 |
US7560322B2 (en) | 2009-07-14 |
EP1815511B1 (en) | 2015-09-02 |
AU2005299298A1 (en) | 2006-05-04 |
AU2005299298B2 (en) | 2011-01-27 |
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