JP5048026B2 - 有機電界発光表示素子 - Google Patents
有機電界発光表示素子 Download PDFInfo
- Publication number
- JP5048026B2 JP5048026B2 JP2009189218A JP2009189218A JP5048026B2 JP 5048026 B2 JP5048026 B2 JP 5048026B2 JP 2009189218 A JP2009189218 A JP 2009189218A JP 2009189218 A JP2009189218 A JP 2009189218A JP 5048026 B2 JP5048026 B2 JP 5048026B2
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- Prior art keywords
- pixel electrode
- film
- light emitting
- electrode
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005401 electroluminescence Methods 0.000 title description 5
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 88
- 239000010409 thin film Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 239000010410 layer Substances 0.000 abstract description 14
- 239000012044 organic layer Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 41
- 238000001312 dry etching Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Description
110、210 緩衝膜
120、220 多結晶シリコンパターン
122、222 ソース/ドレイン領域
130、230 ゲート絶縁膜
132、232 ゲート電極
140、240 層間絶縁膜
150、250 ソース電極
152、252 ドレイン電極
160、260 保護膜
170、270 平坦化膜
180、280 画素電極
190、290 画素定義膜
192、292 有機膜
194、294 対向電極
Claims (3)
- 透明絶縁基板上にゲート電極及びソース/ドレイン電極を含む薄膜トランジスタと、
前記薄膜トランジスタの上方に配置し、コンタクトビアホールが形成された平坦化膜と、
前記平坦化膜の上部に設けられ、前記コンタクトビアホールを介して前記ソース/ドレイン電極のいずれか一方に接続されると共に、端部においてエッチング面を有する画素電極と、
前記平坦化膜は前記画素電極の前記エッチング面に連続するエッチング面を有し、前記画素電極のエッチング面が水平面となす角度θ1は平坦化膜のエッチング面が水平面となす角度θ2とは異なり、
前記平坦化膜の上部及び前記画素電極の前記エッチング面の上部に設けられ、前記画素電極の発光領域を定義する画素定義膜パターンと、
前記画素電極の発光領域上に設けられ、少なくとも発光層を含む有機膜と、
前記有機膜を含む表面全体に設けられる対向電極と、を含む
ことを特徴とする有機電界発光表示素子。 - 前記画素電極の表面は前記平坦化膜の表面へと延伸され、前記画素電極の表面と前記平坦化膜の表面とは、前記コンタクトビアホールの少なくとも二つの側面から下方かつ遠ざかる方向に傾斜し、
前記画素電極の表面は、前記画素電極のエッジに位置し、前記平坦化膜の表面と同一高さで面一である
ことを特徴とする請求項1に記載の有機電界発光表示素子。 - 前記画素電極のエッチング面が水平面となす角度θ1より平坦化膜のエッチング面が水平面となす角度θ2のほうが小さい
ことを特徴とする請求項1または2に記載の有機電界発光表示素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040049163A KR100611652B1 (ko) | 2004-06-28 | 2004-06-28 | 유기 전계 발광 표시 소자 및 그 제조방법 |
KR2004-049163 | 2004-06-28 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004377849A Division JP4637568B2 (ja) | 2004-06-28 | 2004-12-27 | 有機電界発光表示素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009272313A JP2009272313A (ja) | 2009-11-19 |
JP5048026B2 true JP5048026B2 (ja) | 2012-10-17 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004377849A Active JP4637568B2 (ja) | 2004-06-28 | 2004-12-27 | 有機電界発光表示素子及びその製造方法 |
JP2009189218A Active JP5048026B2 (ja) | 2004-06-28 | 2009-08-18 | 有機電界発光表示素子 |
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JP2004377849A Active JP4637568B2 (ja) | 2004-06-28 | 2004-12-27 | 有機電界発光表示素子及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7626204B2 (ja) |
JP (2) | JP4637568B2 (ja) |
KR (1) | KR100611652B1 (ja) |
Families Citing this family (21)
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KR20050112456A (ko) * | 2004-05-25 | 2005-11-30 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR100590238B1 (ko) * | 2004-05-27 | 2006-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조방법 |
KR100900444B1 (ko) * | 2007-06-27 | 2009-06-02 | 엘지전자 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100848342B1 (ko) * | 2007-08-22 | 2008-07-25 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 제조방법 |
US7977678B2 (en) * | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
KR20100007266A (ko) | 2008-07-11 | 2010-01-22 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP2011113736A (ja) * | 2009-11-25 | 2011-06-09 | Toshiba Mobile Display Co Ltd | 有機el装置及びその製造方法 |
KR101108164B1 (ko) * | 2010-02-03 | 2012-02-06 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101084198B1 (ko) * | 2010-02-24 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR20110132816A (ko) * | 2010-06-03 | 2011-12-09 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR101833235B1 (ko) | 2011-07-14 | 2018-04-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
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KR102377531B1 (ko) * | 2015-01-23 | 2022-03-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101753773B1 (ko) | 2016-10-12 | 2017-07-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN107240599A (zh) | 2017-06-23 | 2017-10-10 | 京东方科技集团股份有限公司 | 显示装置、oled显示面板及其制造方法 |
KR102507095B1 (ko) | 2017-10-18 | 2023-03-08 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 이의 제조 방법 |
GB2568516A (en) * | 2017-11-17 | 2019-05-22 | Flexenable Ltd | Organic semiconductor devices |
GB2568515A (en) * | 2017-11-17 | 2019-05-22 | Flexenable Ltd | Display devices |
CN110137385A (zh) * | 2019-04-09 | 2019-08-16 | 深圳市华星光电半导体显示技术有限公司 | 有机发光二极管显示面板及其制造方法 |
CN112542485A (zh) * | 2019-09-23 | 2021-03-23 | 台湾积体电路制造股份有限公司 | 显示设备与其制作方法 |
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-
2004
- 2004-06-28 KR KR1020040049163A patent/KR100611652B1/ko active IP Right Grant
- 2004-12-13 US US11/011,478 patent/US7626204B2/en active Active
- 2004-12-27 JP JP2004377849A patent/JP4637568B2/ja active Active
-
2009
- 2009-08-18 JP JP2009189218A patent/JP5048026B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060000353A (ko) | 2006-01-06 |
JP2009272313A (ja) | 2009-11-19 |
US20050285100A1 (en) | 2005-12-29 |
KR100611652B1 (ko) | 2006-08-11 |
US7626204B2 (en) | 2009-12-01 |
JP2006012768A (ja) | 2006-01-12 |
JP4637568B2 (ja) | 2011-02-23 |
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