KR100900444B1 - 유기전계발광표시장치 및 그 제조방법 - Google Patents
유기전계발광표시장치 및 그 제조방법 Download PDFInfo
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- KR100900444B1 KR100900444B1 KR1020070063634A KR20070063634A KR100900444B1 KR 100900444 B1 KR100900444 B1 KR 100900444B1 KR 1020070063634 A KR1020070063634 A KR 1020070063634A KR 20070063634 A KR20070063634 A KR 20070063634A KR 100900444 B1 KR100900444 B1 KR 100900444B1
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- Prior art keywords
- electrode
- light emitting
- layer
- insulating film
- edge region
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 121
- 238000000151 deposition Methods 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 14
- 239000011368 organic material Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (4)
- 삭제
- 삭제
- 기판 상에 반도체층을 형성하는 단계;상기 반도체층 상에 게이트 절연막을 형성하는 단계;상기 게이트 절연막 상에 상기 반도체층의 일정 영역과 대응되는 게이트 전극을 형성하는 단계;상기 게이트 전극 상에 층간 절연막을 형성하는 단계;상기 층간 절연막 상에 제 1 전극을 형성하는 단계;상기 층간 절연막 및 제 1 전극 상에 상기 반도체층 및 상기 제 1 전극과 전기적으로 연결되는 소오스 전극 및 드레인 전극을 형성하는 단계;상기 제 1 전극의 일부 영역을 노출시키는 개구부를 포함하며, 에지 영역에서 10 내지 50도의 테이퍼 각을 갖는 뱅크층을 형성하는 단계;상기 제 1 전극 상에 35 내지 55도의 비산 각도로 발광 물질을 증착하여 발광층을 형성하는 단계; 및상기 발광층 상에 제 2 전극을 형성하는 단계를 포함하는 유기전계발광표시장치의 제조방법.
- 제 3항에 있어서,상기 뱅크층의 에지 영역의 테이퍼 각은 20 내지 35도로 형성되는 유기전계발광표시장치의 제조방법.
Priority Applications (2)
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KR1020070063634A KR100900444B1 (ko) | 2007-06-27 | 2007-06-27 | 유기전계발광표시장치 및 그 제조방법 |
US12/015,144 US8742656B2 (en) | 2007-06-27 | 2008-01-16 | Organic light emitting device and method of manufacturing the same |
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KR1020070063634A KR100900444B1 (ko) | 2007-06-27 | 2007-06-27 | 유기전계발광표시장치 및 그 제조방법 |
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KR20080114260A KR20080114260A (ko) | 2008-12-31 |
KR100900444B1 true KR100900444B1 (ko) | 2009-06-02 |
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KR1020070063634A KR100900444B1 (ko) | 2007-06-27 | 2007-06-27 | 유기전계발광표시장치 및 그 제조방법 |
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US (1) | US8742656B2 (ko) |
KR (1) | KR100900444B1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170002842A (ko) * | 2015-06-30 | 2017-01-09 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2017163374A1 (ja) * | 2016-03-24 | 2017-09-28 | パイオニア株式会社 | 発光装置の製造方法及び発光装置 |
CN106783924B (zh) * | 2016-12-27 | 2020-10-27 | Tcl科技集团股份有限公司 | 一种oled显示面板及其制作方法 |
CN207052608U (zh) * | 2017-08-24 | 2018-02-27 | 京东方科技集团股份有限公司 | 一种显示基板及显示装置 |
CN111969005B (zh) * | 2019-05-20 | 2021-09-17 | 京东方科技集团股份有限公司 | 显示面板和制造显示面板的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001175200A (ja) | 1998-12-01 | 2001-06-29 | Sanyo Electric Co Ltd | 表示装置 |
KR20030068455A (ko) * | 2002-02-12 | 2003-08-21 | 닛본 덴끼 가부시끼가이샤 | 유기전계발광표시장치 |
KR20050052301A (ko) * | 2003-11-29 | 2005-06-02 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 |
KR20070079491A (ko) * | 2006-02-02 | 2007-08-07 | 두산메카텍 주식회사 | 유기박막 증착용 도가니 장치 |
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TW483287B (en) * | 1999-06-21 | 2002-04-11 | Semiconductor Energy Lab | EL display device, driving method thereof, and electronic equipment provided with the EL display device |
US6872604B2 (en) * | 2000-06-05 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a light emitting device |
KR20040071448A (ko) | 2003-02-06 | 2004-08-12 | 엘지.필립스디스플레이(주) | 평판형 칼라 디스플레이 장치 |
US7227306B2 (en) * | 2003-08-28 | 2007-06-05 | Samsung Sdi Co., Ltd. | Organic electroluminescence display having recessed electrode structure |
KR100741962B1 (ko) * | 2003-11-26 | 2007-07-23 | 삼성에스디아이 주식회사 | 평판표시장치 |
KR100579174B1 (ko) * | 2003-12-22 | 2006-05-11 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 필름 및 그 필름을 사용하여 제조되는유기 전계 발광 소자 |
KR100611652B1 (ko) * | 2004-06-28 | 2006-08-11 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 소자 및 그 제조방법 |
US7470621B2 (en) * | 2005-07-11 | 2008-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR20070113893A (ko) * | 2006-05-26 | 2007-11-29 | 삼성전자주식회사 | 유기 절연막 조성물 및 이를 이용하는 이중 두께를 갖는유기 절연막의 제조방법 |
CN101427608B (zh) * | 2006-06-09 | 2013-03-27 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
JP4438782B2 (ja) * | 2006-08-23 | 2010-03-24 | ソニー株式会社 | 表示装置の製造方法および表示装置 |
-
2007
- 2007-06-27 KR KR1020070063634A patent/KR100900444B1/ko active IP Right Grant
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2008
- 2008-01-16 US US12/015,144 patent/US8742656B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001175200A (ja) | 1998-12-01 | 2001-06-29 | Sanyo Electric Co Ltd | 表示装置 |
KR20030068455A (ko) * | 2002-02-12 | 2003-08-21 | 닛본 덴끼 가부시끼가이샤 | 유기전계발광표시장치 |
KR20050052301A (ko) * | 2003-11-29 | 2005-06-02 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 |
KR20070079491A (ko) * | 2006-02-02 | 2007-08-07 | 두산메카텍 주식회사 | 유기박막 증착용 도가니 장치 |
Also Published As
Publication number | Publication date |
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US20090001358A1 (en) | 2009-01-01 |
KR20080114260A (ko) | 2008-12-31 |
US8742656B2 (en) | 2014-06-03 |
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