JP5041681B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5041681B2
JP5041681B2 JP2005187582A JP2005187582A JP5041681B2 JP 5041681 B2 JP5041681 B2 JP 5041681B2 JP 2005187582 A JP2005187582 A JP 2005187582A JP 2005187582 A JP2005187582 A JP 2005187582A JP 5041681 B2 JP5041681 B2 JP 5041681B2
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Japan
Prior art keywords
idf chip
antenna
oxide
nitride
substrate
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Expired - Fee Related
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JP2005187582A
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Japanese (ja)
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JP2006049851A (ja
JP2006049851A5 (enExample
Inventor
芳隆 道前
友子 田村
卓也 鶴目
浩二 大力
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005187582A priority Critical patent/JP5041681B2/ja
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Publication of JP2006049851A5 publication Critical patent/JP2006049851A5/ja
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Publication of JP5041681B2 publication Critical patent/JP5041681B2/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005187582A 2004-06-29 2005-06-28 半導体装置の作製方法 Expired - Fee Related JP5041681B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005187582A JP5041681B2 (ja) 2004-06-29 2005-06-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004192250 2004-06-29
JP2004192250 2004-06-29
JP2005187582A JP5041681B2 (ja) 2004-06-29 2005-06-28 半導体装置の作製方法

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JP2006049851A JP2006049851A (ja) 2006-02-16
JP2006049851A5 JP2006049851A5 (enExample) 2008-05-15
JP5041681B2 true JP5041681B2 (ja) 2012-10-03

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JP2005187582A Expired - Fee Related JP5041681B2 (ja) 2004-06-29 2005-06-28 半導体装置の作製方法

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JP (1) JP5041681B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364242B2 (ja) * 2006-04-28 2013-12-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP5094232B2 (ja) * 2006-06-26 2012-12-12 株式会社半導体エネルギー研究所 半導体装置を内包する用紙およびその作製方法
JP5204959B2 (ja) 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2038818B1 (en) * 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
JP6957252B2 (ja) 2017-07-20 2021-11-02 岩谷産業株式会社 切断加工方法
JP6925900B2 (ja) * 2017-07-20 2021-08-25 岩谷産業株式会社 切断加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274072A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 表面処理装置および表面処理方法
JP2000020665A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2002353235A (ja) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd アクティブマトリクス基板とそれを用いた表示装置およびその製造方法
EP1455394B1 (en) * 2001-07-24 2018-04-11 Samsung Electronics Co., Ltd. Transfer method
JP2005506704A (ja) * 2001-10-11 2005-03-03 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
JP3956697B2 (ja) * 2001-12-28 2007-08-08 セイコーエプソン株式会社 半導体集積回路の製造方法

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JP2006049851A (ja) 2006-02-16

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