JP5041669B2 - レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 - Google Patents
レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 Download PDFInfo
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- JP5041669B2 JP5041669B2 JP2005081242A JP2005081242A JP5041669B2 JP 5041669 B2 JP5041669 B2 JP 5041669B2 JP 2005081242 A JP2005081242 A JP 2005081242A JP 2005081242 A JP2005081242 A JP 2005081242A JP 5041669 B2 JP5041669 B2 JP 5041669B2
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005081242A JP5041669B2 (ja) | 2004-03-25 | 2005-03-22 | レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004090357 | 2004-03-25 | ||
| JP2004090357 | 2004-03-25 | ||
| JP2005081242A JP5041669B2 (ja) | 2004-03-25 | 2005-03-22 | レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005311327A JP2005311327A (ja) | 2005-11-04 |
| JP2005311327A5 JP2005311327A5 (enExample) | 2008-04-17 |
| JP5041669B2 true JP5041669B2 (ja) | 2012-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005081242A Expired - Fee Related JP5041669B2 (ja) | 2004-03-25 | 2005-03-22 | レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 |
Country Status (1)
| Country | Link |
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| JP (1) | JP5041669B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004042343B4 (de) * | 2004-09-01 | 2008-01-31 | Innovavent Gmbh | Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung |
| WO2007072744A1 (en) * | 2005-12-20 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device |
| JP2008042032A (ja) * | 2006-08-08 | 2008-02-21 | Sumitomo Heavy Ind Ltd | ステージ駆動方法及び該方法を用いたレーザ加工装置 |
| JP2011056536A (ja) * | 2009-09-09 | 2011-03-24 | Sumitomo Heavy Ind Ltd | レーザ加工装置及びレーザ加工方法 |
| KR101432153B1 (ko) * | 2012-11-13 | 2014-08-22 | 삼성디스플레이 주식회사 | 광 투과 장치 및 이를 구비하는 어닐링 장치 |
| KR102531817B1 (ko) * | 2018-03-28 | 2023-05-12 | 한미반도체 주식회사 | 반도체 자재의 부분 차폐방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02260419A (ja) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | レーザ照射方法 |
| JPH0397219A (ja) * | 1989-09-11 | 1991-04-23 | Hitachi Ltd | 半導体装置の製造方法及び装置 |
| JPH04186725A (ja) * | 1990-11-21 | 1992-07-03 | Hitachi Ltd | レーザアニール装置及びアライメント法 |
| JPH0521343A (ja) * | 1991-07-15 | 1993-01-29 | Ricoh Co Ltd | 薄膜トランジスタおよびその製法 |
| JPH10144621A (ja) * | 1996-09-10 | 1998-05-29 | Toshiba Corp | 多結晶シリコンの製造方法、半導体装置の製造方法、液晶表示装置の製造方法、及びレーザアニール装置 |
| JP4032553B2 (ja) * | 1999-03-26 | 2008-01-16 | セイコーエプソン株式会社 | 半導体製造装置 |
| JP2003224084A (ja) * | 2001-11-22 | 2003-08-08 | Semiconductor Energy Lab Co Ltd | 半導体製造装置 |
| JP4279498B2 (ja) * | 2002-02-28 | 2009-06-17 | 株式会社 液晶先端技術開発センター | 半導体薄膜の形成方法、半導体薄膜の形成装置および結晶化方法 |
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2005
- 2005-03-22 JP JP2005081242A patent/JP5041669B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2005311327A (ja) | 2005-11-04 |
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