JP5041669B2 - レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 - Google Patents

レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 Download PDF

Info

Publication number
JP5041669B2
JP5041669B2 JP2005081242A JP2005081242A JP5041669B2 JP 5041669 B2 JP5041669 B2 JP 5041669B2 JP 2005081242 A JP2005081242 A JP 2005081242A JP 2005081242 A JP2005081242 A JP 2005081242A JP 5041669 B2 JP5041669 B2 JP 5041669B2
Authority
JP
Japan
Prior art keywords
laser
order diffracted
diffracted light
marker
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005081242A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005311327A5 (enExample
JP2005311327A (ja
Inventor
幸一郎 田中
良明 山本
奈己 上坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005081242A priority Critical patent/JP5041669B2/ja
Publication of JP2005311327A publication Critical patent/JP2005311327A/ja
Publication of JP2005311327A5 publication Critical patent/JP2005311327A5/ja
Application granted granted Critical
Publication of JP5041669B2 publication Critical patent/JP5041669B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Laser Beam Processing (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005081242A 2004-03-25 2005-03-22 レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法 Expired - Fee Related JP5041669B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005081242A JP5041669B2 (ja) 2004-03-25 2005-03-22 レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004090357 2004-03-25
JP2004090357 2004-03-25
JP2005081242A JP5041669B2 (ja) 2004-03-25 2005-03-22 レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005311327A JP2005311327A (ja) 2005-11-04
JP2005311327A5 JP2005311327A5 (enExample) 2008-04-17
JP5041669B2 true JP5041669B2 (ja) 2012-10-03

Family

ID=35439675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005081242A Expired - Fee Related JP5041669B2 (ja) 2004-03-25 2005-03-22 レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5041669B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004042343B4 (de) * 2004-09-01 2008-01-31 Innovavent Gmbh Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung
KR101351474B1 (ko) 2005-12-20 2014-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사장치, 레이저 조사방법, 및 반도체장치제조방법
JP2008042032A (ja) * 2006-08-08 2008-02-21 Sumitomo Heavy Ind Ltd ステージ駆動方法及び該方法を用いたレーザ加工装置
JP2011056536A (ja) * 2009-09-09 2011-03-24 Sumitomo Heavy Ind Ltd レーザ加工装置及びレーザ加工方法
KR101432153B1 (ko) * 2012-11-13 2014-08-22 삼성디스플레이 주식회사 광 투과 장치 및 이를 구비하는 어닐링 장치
KR102531817B1 (ko) * 2018-03-28 2023-05-12 한미반도체 주식회사 반도체 자재의 부분 차폐방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260419A (ja) * 1989-03-30 1990-10-23 Matsushita Electric Ind Co Ltd レーザ照射方法
JPH0397219A (ja) * 1989-09-11 1991-04-23 Hitachi Ltd 半導体装置の製造方法及び装置
JPH04186725A (ja) * 1990-11-21 1992-07-03 Hitachi Ltd レーザアニール装置及びアライメント法
JPH0521343A (ja) * 1991-07-15 1993-01-29 Ricoh Co Ltd 薄膜トランジスタおよびその製法
JPH10144621A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 多結晶シリコンの製造方法、半導体装置の製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP4032553B2 (ja) * 1999-03-26 2008-01-16 セイコーエプソン株式会社 半導体製造装置
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
JP4279498B2 (ja) * 2002-02-28 2009-06-17 株式会社 液晶先端技術開発センター 半導体薄膜の形成方法、半導体薄膜の形成装置および結晶化方法

Also Published As

Publication number Publication date
JP2005311327A (ja) 2005-11-04

Similar Documents

Publication Publication Date Title
US7547866B2 (en) Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same
KR100915312B1 (ko) 레이저 조사방법, 레이저 조사장치 및 반도체 장치의 제조방법
TWI423299B (zh) 雷射照射設備及製造半導體裝置之方法
CN100433244C (zh) 制造半导体器件的方法
JP5227900B2 (ja) 半導体装置の作製方法
JP3980465B2 (ja) 半導体装置の作製方法
KR101438379B1 (ko) 결정성 반도체막의 제조방법 및 박막트랜지스터의 제조방법
US6844523B2 (en) Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment
US20050037552A1 (en) Beam irradiation apparatus, beam irradiation method, and method for manufacturing semiconductor device
KR101065660B1 (ko) 레이저 조사방법, 레이저 조사장치 및 반도체장치의제조방법
US8269136B2 (en) Laser beam treatment device and semiconductor device
JP2005340788A (ja) レーザ照射方法およびそれを用いた半導体装置の作製方法
JP2005311327A (ja) レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法
JP2003332258A (ja) レーザアニール装置、半導体デバイス、及び半導体デバイスの製造方法。
JP4515136B2 (ja) レーザビーム照射装置、薄膜トランジスタの作製方法
JP4503344B2 (ja) ビーム照射装置および半導体装置の作製方法
JP2003224084A (ja) 半導体製造装置
JP3908153B2 (ja) 半導体装置の作製方法
JP3908129B2 (ja) 半導体装置の作製方法
JP2004072086A (ja) レーザー照射方法及びレーザー照射装置
JP4503343B2 (ja) ビーム照射装置、ビーム照射方法、及び薄膜トランジスタの作製方法
JP3883952B2 (ja) レーザ照射装置
JP2007103961A (ja) レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080229

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080229

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090527

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111223

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120703

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120710

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150720

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150720

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees