JP5036130B2 - 自己整合した垂直ゲート半導体装置 - Google Patents

自己整合した垂直ゲート半導体装置 Download PDF

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Publication number
JP5036130B2
JP5036130B2 JP2004529203A JP2004529203A JP5036130B2 JP 5036130 B2 JP5036130 B2 JP 5036130B2 JP 2004529203 A JP2004529203 A JP 2004529203A JP 2004529203 A JP2004529203 A JP 2004529203A JP 5036130 B2 JP5036130 B2 JP 5036130B2
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Japan
Prior art keywords
dielectric material
dielectric
pedestal structure
substrate
semiconductor device
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Expired - Fee Related
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JP2004529203A
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English (en)
Japanese (ja)
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JP2005536056A5 (https=
JP2005536056A (ja
Inventor
グリヴナ，ゴードン，エム
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/0133—Aspects related to lithography, isolation or planarisation of the conductor at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2004529203A 2002-08-16 2003-07-28 自己整合した垂直ゲート半導体装置 Expired - Fee Related JP5036130B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/219,190 2002-08-16
US10/219,190 US7045845B2 (en) 2002-08-16 2002-08-16 Self-aligned vertical gate semiconductor device
PCT/US2003/023558 WO2004017419A1 (en) 2002-08-16 2003-07-28 Vertical gate semiconductor device with a self-aligned structure

Publications (3)

Publication Number Publication Date
JP2005536056A JP2005536056A (ja) 2005-11-24
JP2005536056A5 JP2005536056A5 (https=) 2006-07-06
JP5036130B2 true JP5036130B2 (ja) 2012-09-26

Family

ID=31714695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004529203A Expired - Fee Related JP5036130B2 (ja) 2002-08-16 2003-07-28 自己整合した垂直ゲート半導体装置

Country Status (7)

Country Link
US (1) US7045845B2 (https=)
EP (1) EP1535344B1 (https=)
JP (1) JP5036130B2 (https=)
KR (1) KR101026953B1 (https=)
CN (1) CN100438071C (https=)
AU (1) AU2003254226A1 (https=)
WO (1) WO2004017419A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007535147A (ja) * 2004-04-23 2007-11-29 エーエスエム アメリカ インコーポレイテッド インサイチュドープトエピタキシャルフィルム
JP4929579B2 (ja) * 2004-10-26 2012-05-09 日産自動車株式会社 半導体装置の製造方法
ITMI20042243A1 (it) * 2004-11-19 2005-02-19 St Microelectronics Srl Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione
US7875936B2 (en) * 2004-11-19 2011-01-25 Stmicroelectronics, S.R.L. Power MOS electronic device and corresponding realizing method
US7397084B2 (en) * 2005-04-01 2008-07-08 Semiconductor Components Industries, L.L.C. Semiconductor device having enhanced performance and method
US7446354B2 (en) * 2005-04-25 2008-11-04 Semiconductor Components Industries, L.L.C. Power semiconductor device having improved performance and method
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
US7300850B2 (en) * 2005-09-30 2007-11-27 Semiconductor Components Industries, L.L.C. Method of forming a self-aligned transistor
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
JP2012253291A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法
US20130154017A1 (en) * 2011-12-14 2013-06-20 Microchip Technology Incorporated Self-Aligned Gate Structure for Field Effect Transistor
US10217644B2 (en) * 2012-07-24 2019-02-26 Infineon Technologies Ag Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures
US9818831B2 (en) * 2013-03-11 2017-11-14 Semiconductor Components Industreis, Llc DMOS transistor including a gate dielectric having a non-uniform thickness
CN109616447A (zh) * 2018-12-13 2019-04-12 武汉新芯集成电路制造有限公司 一种半导体器件及其制造方法
US11569378B2 (en) 2020-12-22 2023-01-31 Texas Instruments Incorporated Semiconductor on insulator on wide band-gap semiconductor
US11557673B2 (en) 2020-12-29 2023-01-17 Texas Instruments Incorporated Hybrid semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04256367A (ja) * 1991-02-08 1992-09-11 Hitachi Ltd 半導体素子
JP3173094B2 (ja) * 1992-01-23 2001-06-04 ソニー株式会社 Ｍｏｓトランジスタの製造方法
JPH065864A (ja) * 1992-06-23 1994-01-14 Shindengen Electric Mfg Co Ltd 絶縁ゲ−ト型電界効果トランジスタおよび製造方法
JP3113426B2 (ja) 1992-11-27 2000-11-27 三洋電機株式会社 絶縁ゲート半導体装置及びその製造方法
JP3166148B2 (ja) * 1995-07-11 2001-05-14 横河電機株式会社 半導体装置
US6110783A (en) * 1997-06-27 2000-08-29 Sun Microsystems, Inc. Method for forming a notched gate oxide asymmetric MOS device
DE19731496A1 (de) * 1997-07-22 1999-01-28 Siemens Ag Herstellungsverfahren für ein durch Feldeffekt gesteuertes Halbleiterbauelement
US6593617B1 (en) * 1998-02-19 2003-07-15 International Business Machines Corporation Field effect transistors with vertical gate side walls and method for making such transistors
US6051456A (en) 1998-12-21 2000-04-18 Motorola, Inc. Semiconductor component and method of manufacture
US6197640B1 (en) * 1998-12-21 2001-03-06 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
FR2788629B1 (fr) * 1999-01-15 2003-06-20 Commissariat Energie Atomique Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur
KR20000051294A (ko) * 1999-01-20 2000-08-16 김덕중 전기적 특성이 향상된 디모스 전계 효과 트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
CN100438071C (zh) 2008-11-26
WO2004017419A1 (en) 2004-02-26
US7045845B2 (en) 2006-05-16
KR20050038013A (ko) 2005-04-25
KR101026953B1 (ko) 2011-04-11
US20040031981A1 (en) 2004-02-19
EP1535344B1 (en) 2012-11-21
HK1081325A1 (zh) 2006-05-12
JP2005536056A (ja) 2005-11-24
AU2003254226A1 (en) 2004-03-03
EP1535344A1 (en) 2005-06-01
CN1675777A (zh) 2005-09-28

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