JP5030406B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5030406B2
JP5030406B2 JP2005246250A JP2005246250A JP5030406B2 JP 5030406 B2 JP5030406 B2 JP 5030406B2 JP 2005246250 A JP2005246250 A JP 2005246250A JP 2005246250 A JP2005246250 A JP 2005246250A JP 5030406 B2 JP5030406 B2 JP 5030406B2
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Japan
Prior art keywords
layer
electrode layer
film
source
semiconductor layer
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Expired - Fee Related
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JP2005246250A
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English (en)
Japanese (ja)
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JP2006100807A (ja
JP2006100807A5 (enExample
Inventor
博信 小路
慎志 前川
健輔 吉住
達也 本田
幸恵 鈴木
郁子 川俣
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005246250A priority Critical patent/JP5030406B2/ja
Publication of JP2006100807A publication Critical patent/JP2006100807A/ja
Publication of JP2006100807A5 publication Critical patent/JP2006100807A5/ja
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Publication of JP5030406B2 publication Critical patent/JP5030406B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005246250A 2004-08-30 2005-08-26 表示装置の作製方法 Expired - Fee Related JP5030406B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005246250A JP5030406B2 (ja) 2004-08-30 2005-08-26 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004251036 2004-08-30
JP2004251036 2004-08-30
JP2005246250A JP5030406B2 (ja) 2004-08-30 2005-08-26 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006100807A JP2006100807A (ja) 2006-04-13
JP2006100807A5 JP2006100807A5 (enExample) 2008-08-07
JP5030406B2 true JP5030406B2 (ja) 2012-09-19

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ID=36240269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005246250A Expired - Fee Related JP5030406B2 (ja) 2004-08-30 2005-08-26 表示装置の作製方法

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JP (1) JP5030406B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5128091B2 (ja) * 2006-08-04 2013-01-23 三菱電機株式会社 表示装置及びその製造方法
KR100864884B1 (ko) * 2006-12-28 2008-10-22 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR101410926B1 (ko) 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP5324758B2 (ja) * 2007-06-05 2013-10-23 三菱電機株式会社 薄膜トランジスタ、表示装置、およびその製造方法
JP5182993B2 (ja) * 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5642447B2 (ja) * 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
KR101056427B1 (ko) 2009-08-13 2011-08-11 삼성모바일디스플레이주식회사 박막트랜지스터의 제조방법 및 그를 포함하는 유기전계발광표시장치의 제조방법
CN104992962B (zh) 2009-12-04 2018-12-25 株式会社半导体能源研究所 半导体器件及其制造方法
KR101042957B1 (ko) 2010-03-19 2011-06-20 삼성모바일디스플레이주식회사 트랜지스터 기판, 및 이의 제조 방법
CN102692815B (zh) * 2012-05-23 2014-05-21 深圳市华星光电技术有限公司 光掩模及其制造方法
KR101438642B1 (ko) * 2013-11-04 2014-09-17 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR102170999B1 (ko) * 2014-07-30 2020-10-29 삼성디스플레이 주식회사 표시장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243327A (ja) * 2002-02-20 2003-08-29 Seiko Epson Corp 電子デバイス、配線形成方法および配線形成装置
JP3864413B2 (ja) * 2002-04-22 2006-12-27 セイコーエプソン株式会社 トランジスタの製造方法
JP2003347567A (ja) * 2002-05-23 2003-12-05 Sharp Corp 半導体デバイスおよびその製造方法
JP4342843B2 (ja) * 2002-06-12 2009-10-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2006100807A (ja) 2006-04-13

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