JP5019146B2 - 変換型led - Google Patents
変換型led Download PDFInfo
- Publication number
- JP5019146B2 JP5019146B2 JP2004158246A JP2004158246A JP5019146B2 JP 5019146 B2 JP5019146 B2 JP 5019146B2 JP 2004158246 A JP2004158246 A JP 2004158246A JP 2004158246 A JP2004158246 A JP 2004158246A JP 5019146 B2 JP5019146 B2 JP 5019146B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- particles
- conversion
- type led
- conversion type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 94
- 239000002245 particle Substances 0.000 claims description 63
- 239000011164 primary particle Substances 0.000 claims description 35
- 239000000843 powder Substances 0.000 claims description 30
- 230000005855 radiation Effects 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 239000011148 porous material Substances 0.000 claims description 14
- 239000002223 garnet Substances 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000002243 precursor Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 238000001354 calcination Methods 0.000 description 9
- 238000001556 precipitation Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000012266 salt solution Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 239000012153 distilled water Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 239000004202 carbamide Substances 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- MEWCPXSDLIWQER-UHFFFAOYSA-N aluminum oxygen(2-) yttrium(3+) Chemical compound [O-2].[Y+3].[O-2].[Al+3] MEWCPXSDLIWQER-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- GRWVQDDAKZFPFI-UHFFFAOYSA-H chromium(III) sulfate Chemical compound [Cr+3].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GRWVQDDAKZFPFI-UHFFFAOYSA-H 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910000347 yttrium sulfate Inorganic materials 0.000 description 1
- RTAYJOCWVUTQHB-UHFFFAOYSA-H yttrium(3+);trisulfate Chemical compound [Y+3].[Y+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RTAYJOCWVUTQHB-UHFFFAOYSA-H 0.000 description 1
- GFDKELMFCRQUSG-UHFFFAOYSA-N yttrium;trihydrate Chemical compound O.O.O.[Y] GFDKELMFCRQUSG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7706—Aluminates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
I. Matsubara et al.著, Materials Research Bulletin 35 (2000), p. 217-224
Claims (14)
- 300〜550nmのピーク波長の一次放射線を放射するチップと、粉末として存在する少なくとも1種の蛍光体とを有し、前記粉末は蛍光体粒子を有し、前記蛍光体は一次放射線の少なくとも一部を吸収しかつ二次放射線として他の波長で放射する変換型LEDにおいて、前記蛍光体粒子の平均粒径d50が0.1〜1.5μmの範囲内にあり、前記蛍光体粒子(2)は、0.1μm〜1.0μmの範囲から選択される平均孔径(7)を有する気孔(6)を有することを特徴とする、変換型LED。
- 前記蛍光体粒子の平均粒径d50が、一次放射線の吸収の最大値を有する粒径の付近にあり、かつ前記粒径から高くても50%変動することを特徴とする、請求項1記載の変換型LED。
- チップは430〜490nmのピーク発光波長の青色放射線を放射し、この放射線は少なくとも1種の蛍光体により部分的に吸収され、前記蛍光体が前記放射線をより長波長の放射線に変換することを特徴とする、請求項1記載の変換型LED。
- 前記蛍光体粉末(1)が0.3μm〜1.5μmの範囲から選択される蛍光体平均粒径(3)を有する蛍光体粒子(2)を有し、その際、この蛍光体粒子(2)は0.1μm〜1.0μmの範囲から選択される平均一次粒径(5)を有する一次粒子(4)を有することを特徴とする、請求項1記載の変換型LED。
- 蛍光体粒子は球状又はほぼ球状の形状を有することを特徴とする、請求項4記載の変換型LED。
- 蛍光体粒子(2)はほぼ一次粒子(4)だけから構成されていることを特徴とする、請求項4記載の変換型LED。
- 一次粒子(4)はほぼ唯一の相を形成することを特徴とする、請求項4記載の変換型LED。
- 一次粒子(4)はガーネット構造を有し、前記ガーネットは組成A 3 B 5 O 12 を有し、その際、A及びBは三価の金属であることを特徴とする、請求項4記載の変換型LED。
- ガーネットは組成A3B5O12を有し、その際、A及びBは三価の金属であり、Aは元素Y、Gd、La、Tbの少なくとも1つであり、Bは元素Al、Ga、Inの少なくとも1つであることを特徴とする、請求項8記載の変換型LED。
- ガーネットの組成がY3Al5O12であることを特徴とする、請求項9記載の変換型LED。
- 一次粒子(4)は希土類金属の少なくとも1つのドーパントを有することを特徴とする、請求項9記載の変換型LED。
- 希土類金属はCe、Gd、La、Tb、Pr、Euのグループから、単独で又は組み合わせた形で選択されていることを特徴とする、請求項11記載の変換型LED。
- 平均孔径(7)は0.5μmであることを特徴とする、請求項1記載の変換型LED。
- 蛍光体粒子(2)は、蛍光体材料の理論的密度の40%〜70%の範囲から選択される密度に相当する気孔を有することを特徴とする、請求項1記載の変換型LED。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE20308495U DE20308495U1 (de) | 2003-05-28 | 2003-05-28 | Konversions-LED |
DE20308495.0 | 2003-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004356635A JP2004356635A (ja) | 2004-12-16 |
JP5019146B2 true JP5019146B2 (ja) | 2012-09-05 |
Family
ID=33103748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004158246A Expired - Fee Related JP5019146B2 (ja) | 2003-05-28 | 2004-05-27 | 変換型led |
Country Status (4)
Country | Link |
---|---|
US (1) | US7126265B2 (ja) |
JP (1) | JP5019146B2 (ja) |
CA (1) | CA2468650A1 (ja) |
DE (2) | DE20308495U1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10633498B2 (en) | 2015-02-26 | 2020-04-28 | The Japan Steel Works, Ltd. | Method for manufacturing microporous film and microporous film |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10223988A1 (de) * | 2002-05-29 | 2003-12-18 | Siemens Ag | Leuchtstoffpulver, Verfahren zum Herstellen des Leuchtstoffpulvers und Leuchtstoffkörper mit dem Leuchtstoffpulver |
TWI249867B (en) | 2005-03-24 | 2006-02-21 | Lighthouse Technology Co Ltd | Light-emitting diode package, cold cathode fluorescence lamp and photoluminescence material thereof |
US7733310B2 (en) * | 2005-04-01 | 2010-06-08 | Prysm, Inc. | Display screens having optical fluorescent materials |
US7791561B2 (en) | 2005-04-01 | 2010-09-07 | Prysm, Inc. | Display systems having screens with optical fluorescent materials |
US7474286B2 (en) * | 2005-04-01 | 2009-01-06 | Spudnik, Inc. | Laser displays using UV-excitable phosphors emitting visible colored light |
US8000005B2 (en) * | 2006-03-31 | 2011-08-16 | Prysm, Inc. | Multilayered fluorescent screens for scanning beam display systems |
US8089425B2 (en) * | 2006-03-03 | 2012-01-03 | Prysm, Inc. | Optical designs for scanning beam display systems using fluorescent screens |
US7994702B2 (en) * | 2005-04-27 | 2011-08-09 | Prysm, Inc. | Scanning beams displays based on light-emitting screens having phosphors |
DE102005030324B4 (de) * | 2005-06-29 | 2013-04-04 | Lextar Electronics Corp. | Lichtemittierende Dioden-Baugruppenanordnung, Kaltkathoden-Fluoreszenzlampe und photolumineszentes Material davon |
US7884816B2 (en) * | 2006-02-15 | 2011-02-08 | Prysm, Inc. | Correcting pyramidal error of polygon scanner in scanning beam display systems |
US8451195B2 (en) | 2006-02-15 | 2013-05-28 | Prysm, Inc. | Servo-assisted scanning beam display systems using fluorescent screens |
WO2007107915A1 (en) * | 2006-03-23 | 2007-09-27 | Philips Intellectual Property & Standards Gmbh | Light emitting device with a ceramic garnet material |
TWI357435B (en) * | 2006-05-12 | 2012-02-01 | Lextar Electronics Corp | Light emitting diode and wavelength converting mat |
US20070269915A1 (en) * | 2006-05-16 | 2007-11-22 | Ak Wing Leong | LED devices incorporating moisture-resistant seals and having ceramic substrates |
JP2008007644A (ja) * | 2006-06-29 | 2008-01-17 | Fine Rubber Kenkyusho:Kk | 赤色発光蛍光体及び発光装置 |
US20080068295A1 (en) * | 2006-09-19 | 2008-03-20 | Hajjar Roger A | Compensation for Spatial Variation in Displayed Image in Scanning Beam Display Systems Using Light-Emitting Screens |
EP2089916A1 (en) | 2006-11-07 | 2009-08-19 | Philips Intellectual Property & Standards GmbH | Arrangement for emitting mixed light |
US8013506B2 (en) * | 2006-12-12 | 2011-09-06 | Prysm, Inc. | Organic compounds for adjusting phosphor chromaticity |
TW200827425A (en) * | 2006-12-28 | 2008-07-01 | Wang yong qi | Light emitting diode used in short-wave semiconductor and fluorescent powder |
EP2118235B1 (en) * | 2007-02-06 | 2011-04-06 | Philips Intellectual Property & Standards GmbH | Red emitting oxynitride luminescent materials |
WO2008116123A1 (en) | 2007-03-20 | 2008-09-25 | Spudnik, Inc. | Delivering and displaying advertisement or other application data to display systems |
US7697183B2 (en) * | 2007-04-06 | 2010-04-13 | Prysm, Inc. | Post-objective scanning beam systems |
US8169454B1 (en) | 2007-04-06 | 2012-05-01 | Prysm, Inc. | Patterning a surface using pre-objective and post-objective raster scanning systems |
KR101117912B1 (ko) | 2007-05-17 | 2012-03-13 | 프리즘, 인코포레이티드 | 빔 주사 디스플레이 시스템용 발광 스트라이프를 가진 다층 스크린 |
US8556430B2 (en) | 2007-06-27 | 2013-10-15 | Prysm, Inc. | Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens |
US7878657B2 (en) * | 2007-06-27 | 2011-02-01 | Prysm, Inc. | Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens |
US7905618B2 (en) * | 2007-07-19 | 2011-03-15 | Samsung Led Co., Ltd. | Backlight unit |
DE102008021666A1 (de) * | 2008-04-30 | 2009-11-05 | Ledon Lighting Jennersdorf Gmbh | Lichtemittierende Vorrichtung und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung |
US7869112B2 (en) * | 2008-07-25 | 2011-01-11 | Prysm, Inc. | Beam scanning based on two-dimensional polygon scanner for display and other applications |
US20120181919A1 (en) * | 2008-08-27 | 2012-07-19 | Osram Sylvania Inc. | Luminescent Ceramic Composite Converter and Method of Making the Same |
EP2161763A1 (de) * | 2008-09-04 | 2010-03-10 | Bayer MaterialScience AG | Konversionsfolie und ein Verfahren zu deren Herstellung |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8785222B2 (en) * | 2011-05-09 | 2014-07-22 | Hong Kong Applied Science and Technology Research Institute Company Limited | Phosphor ink composition |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
WO2013096969A1 (en) * | 2011-12-23 | 2013-06-27 | Martin, Richard, James | Photoluminescent illuminators for passive illumination of sights and other devices |
DE102012105278A1 (de) * | 2012-06-18 | 2013-12-19 | Osram Gmbh | Verfahren zur Herstellung einer keramischen Wellenlängenkonversionsschicht und Beleuchtungselement mit einer keramischen Wellenlängenkonversionsschicht |
CN102779929B (zh) * | 2012-07-30 | 2015-07-29 | 香港应用科技研究院有限公司 | 荧光墨组合物 |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
JP6261196B2 (ja) * | 2013-06-12 | 2018-01-17 | 信越化学工業株式会社 | 発光装置 |
CN103361059A (zh) * | 2013-07-26 | 2013-10-23 | 莆田学院 | 一种制备掺铈钇铝石榴石荧光粉的氨气均相沉淀法 |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US20170333754A1 (en) * | 2016-05-17 | 2017-11-23 | Kuaiwear Limited | Multi-sport biometric feedback device, system, and method for adaptive coaching |
JP6428813B2 (ja) * | 2017-03-13 | 2018-11-28 | 信越化学工業株式会社 | 発光装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5851428A (en) * | 1996-03-15 | 1998-12-22 | Kabushiki Kaisha Toshiba | Phosphor and manufacturing method thereof |
JP3772801B2 (ja) * | 1996-11-05 | 2006-05-10 | 日亜化学工業株式会社 | 発光ダイオード |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
CN100567447C (zh) * | 2000-06-27 | 2009-12-09 | 住友化学工业株式会社 | 铝酸盐荧光物质的制法、荧光物质和含荧光物质的装置 |
JP2002038150A (ja) * | 2000-07-26 | 2002-02-06 | Toshiba Corp | 真空紫外線励起蛍光体およびそれを用いた発光装置 |
EP1298183A1 (en) * | 2001-04-27 | 2003-04-02 | Kasei Optonix, Ltd. | Phosphor and production method therefor |
DE10133352A1 (de) * | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10223988A1 (de) | 2002-05-29 | 2003-12-18 | Siemens Ag | Leuchtstoffpulver, Verfahren zum Herstellen des Leuchtstoffpulvers und Leuchtstoffkörper mit dem Leuchtstoffpulver |
JP2004071908A (ja) * | 2002-08-07 | 2004-03-04 | Matsushita Electric Works Ltd | 発光装置 |
DE10316769A1 (de) * | 2003-04-10 | 2004-10-28 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoffbassierte LED und zugehöriger Leuchtstoff |
JP2005041942A (ja) * | 2003-07-24 | 2005-02-17 | Mitsubishi Chemicals Corp | 発光物質及びそれを用いた発光装置、並びに発光装置を用いた照明装置、画像表示装置 |
JP4124056B2 (ja) * | 2003-08-14 | 2008-07-23 | 昭栄化学工業株式会社 | 蛍光体粉末の製造方法 |
-
2003
- 2003-05-28 DE DE20308495U patent/DE20308495U1/de not_active Expired - Lifetime
-
2004
- 2004-05-19 DE DE102004024889A patent/DE102004024889A1/de not_active Withdrawn
- 2004-05-24 US US10/851,226 patent/US7126265B2/en not_active Expired - Fee Related
- 2004-05-27 JP JP2004158246A patent/JP5019146B2/ja not_active Expired - Fee Related
- 2004-05-27 CA CA002468650A patent/CA2468650A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10633498B2 (en) | 2015-02-26 | 2020-04-28 | The Japan Steel Works, Ltd. | Method for manufacturing microporous film and microporous film |
Also Published As
Publication number | Publication date |
---|---|
JP2004356635A (ja) | 2004-12-16 |
US20050012446A1 (en) | 2005-01-20 |
CA2468650A1 (en) | 2004-11-28 |
DE20308495U1 (de) | 2004-09-30 |
DE102004024889A1 (de) | 2005-01-05 |
US7126265B2 (en) | 2006-10-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5019146B2 (ja) | 変換型led | |
JP2005527692A (ja) | 蛍光体粉末、蛍光体粉末の製造方法及び蛍光体粉末を有する蛍光体ボディ | |
JP4325733B2 (ja) | 蛍光体及びその製造方法並びにそれを使用した発光装置 | |
JP4325629B2 (ja) | 蛍光体及びその製造方法並びにそれを使用した発光装置 | |
KR101172143B1 (ko) | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 | |
US8313844B2 (en) | Phosphor, method for production thereof, wavelength converter, light emitting device and luminaire | |
JP2006265542A5 (ja) | ||
US20080123698A1 (en) | Tb-DOPED LUMINESCENT COMPOUND, LUMINESCENT COMPOSITION AND LUMINESCENT BODY CONTAINING THE SAME, LIGHT EMITTING DEVICE AND SOLID-STATE LASER DEVICE | |
JP2015113358A (ja) | 蛍光体、蛍光体含有組成物、発光装置、照明装置、画像表示装置、及び蛍光体の製造方法 | |
JP2010270196A (ja) | 蛍光体及び蛍光体の製造方法、並びに、蛍光体含有組成物、発光装置、照明装置、画像表示装置及び蛍光塗料 | |
KR101405596B1 (ko) | 알루미늄 실리케이트계 형광체 및 이의 제조방법 | |
JP2008050493A (ja) | 蛍光体及びそれを用いた発光装置 | |
JP6123619B2 (ja) | 複合波長変換粒子及び複合波長変換粒子含有樹脂組成物並びに発光装置 | |
CN104204134B (zh) | 荧光体、荧光体的制造方法及发光装置 | |
JP2014194019A (ja) | 照明システム | |
KR101297619B1 (ko) | 백색 led 소자용 삼사정계 산화질화물 황색형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 | |
TW559627B (en) | Method for producing bright white light diode with fluorescent powder | |
JP2010196049A (ja) | 蛍光体及びその製造方法、蛍光体含有組成物、並びに、該蛍光体を用いた発光装置、画像表示装置及び照明装置 | |
JP4098354B2 (ja) | 白色発光装置 | |
JP4925119B2 (ja) | 酸化物蛍光体および発光装置 | |
KR101103999B1 (ko) | 산화질화물계 형광체, 그의 제조방법 및 발광 장치 | |
JP2009238887A (ja) | 波長変換器および発光装置ならびに照明装置 | |
KR100387659B1 (ko) | 졸겔법을 이용한 스트론튬알루미네이트 형광체의 제조방법 | |
RU2818556C1 (ru) | Способ получения люминесцирующей оксидной композиции для преобразователя излучения в источниках белого света | |
CN109233833B (zh) | 一种磷酸盐荧光粉及其制备方法和应用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100615 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100908 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101012 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110915 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120502 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120530 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120531 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150622 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |