JP5004642B2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
- Publication number
- JP5004642B2 JP5004642B2 JP2007110947A JP2007110947A JP5004642B2 JP 5004642 B2 JP5004642 B2 JP 5004642B2 JP 2007110947 A JP2007110947 A JP 2007110947A JP 2007110947 A JP2007110947 A JP 2007110947A JP 5004642 B2 JP5004642 B2 JP 5004642B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- semiconductor laser
- aluminum nitride
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 167
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 90
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 60
- 150000004767 nitrides Chemical class 0.000 claims description 59
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 492
- 239000010410 layer Substances 0.000 description 68
- 235000005811 Viola adunca Nutrition 0.000 description 46
- 240000009038 Viola odorata Species 0.000 description 46
- 235000013487 Viola odorata Nutrition 0.000 description 46
- 235000002254 Viola papilionacea Nutrition 0.000 description 46
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 27
- 229910052760 oxygen Inorganic materials 0.000 description 27
- 239000001301 oxygen Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 25
- 230000006378 damage Effects 0.000 description 22
- 229910002704 AlGaN Inorganic materials 0.000 description 17
- 238000005253 cladding Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010348 incorporation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
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- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007110947A JP5004642B2 (ja) | 2007-04-19 | 2007-04-19 | 半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007110947A JP5004642B2 (ja) | 2007-04-19 | 2007-04-19 | 半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008270498A JP2008270498A (ja) | 2008-11-06 |
| JP2008270498A5 JP2008270498A5 (https=) | 2010-03-25 |
| JP5004642B2 true JP5004642B2 (ja) | 2012-08-22 |
Family
ID=40049617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007110947A Expired - Fee Related JP5004642B2 (ja) | 2007-04-19 | 2007-04-19 | 半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5004642B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5193718B2 (ja) | 2008-07-18 | 2013-05-08 | パナソニック株式会社 | 窒化物半導体レーザ装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03142892A (ja) * | 1989-10-27 | 1991-06-18 | Sharp Corp | 半導体レーザ素子 |
| JP2947164B2 (ja) * | 1996-04-02 | 1999-09-13 | 日本電気株式会社 | 半導体レーザ素子 |
| JP2000068586A (ja) * | 1998-08-20 | 2000-03-03 | Hitachi Ltd | 光モジュールおよび光伝送装置 |
| JP4451371B2 (ja) * | 2004-12-20 | 2010-04-14 | シャープ株式会社 | 窒化物半導体レーザ素子 |
| JP4740037B2 (ja) * | 2006-05-30 | 2011-08-03 | シャープ株式会社 | 窒化物半導体レーザ素子およびこれを備えた窒化物半導体レーザ装置 |
-
2007
- 2007-04-19 JP JP2007110947A patent/JP5004642B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008270498A (ja) | 2008-11-06 |
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