JP2008270498A5 - - Google Patents
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- Publication number
- JP2008270498A5 JP2008270498A5 JP2007110947A JP2007110947A JP2008270498A5 JP 2008270498 A5 JP2008270498 A5 JP 2008270498A5 JP 2007110947 A JP2007110947 A JP 2007110947A JP 2007110947 A JP2007110947 A JP 2007110947A JP 2008270498 A5 JP2008270498 A5 JP 2008270498A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor laser
- laser device
- film
- multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 150000004767 nitrides Chemical class 0.000 claims 7
- 239000000463 material Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007110947A JP5004642B2 (ja) | 2007-04-19 | 2007-04-19 | 半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007110947A JP5004642B2 (ja) | 2007-04-19 | 2007-04-19 | 半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008270498A JP2008270498A (ja) | 2008-11-06 |
| JP2008270498A5 true JP2008270498A5 (https=) | 2010-03-25 |
| JP5004642B2 JP5004642B2 (ja) | 2012-08-22 |
Family
ID=40049617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007110947A Expired - Fee Related JP5004642B2 (ja) | 2007-04-19 | 2007-04-19 | 半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5004642B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5193718B2 (ja) | 2008-07-18 | 2013-05-08 | パナソニック株式会社 | 窒化物半導体レーザ装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03142892A (ja) * | 1989-10-27 | 1991-06-18 | Sharp Corp | 半導体レーザ素子 |
| JP2947164B2 (ja) * | 1996-04-02 | 1999-09-13 | 日本電気株式会社 | 半導体レーザ素子 |
| JP2000068586A (ja) * | 1998-08-20 | 2000-03-03 | Hitachi Ltd | 光モジュールおよび光伝送装置 |
| JP4451371B2 (ja) * | 2004-12-20 | 2010-04-14 | シャープ株式会社 | 窒化物半導体レーザ素子 |
| JP4740037B2 (ja) * | 2006-05-30 | 2011-08-03 | シャープ株式会社 | 窒化物半導体レーザ素子およびこれを備えた窒化物半導体レーザ装置 |
-
2007
- 2007-04-19 JP JP2007110947A patent/JP5004642B2/ja not_active Expired - Fee Related
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