JP5000468B2 - 光起電モジュール - Google Patents
光起電モジュール Download PDFInfo
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- JP5000468B2 JP5000468B2 JP2007314110A JP2007314110A JP5000468B2 JP 5000468 B2 JP5000468 B2 JP 5000468B2 JP 2007314110 A JP2007314110 A JP 2007314110A JP 2007314110 A JP2007314110 A JP 2007314110A JP 5000468 B2 JP5000468 B2 JP 5000468B2
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- 238000000926 separation method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005476 soldering Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 a-Si or μc-Si Chemical compound 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/36—Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Photovoltaic Devices (AREA)
Description
2 サブモジュール
4 サブモジュール
5 接続帯片
10 光起電モジュール
11 サブモジュール
12 サブモジュール
13 サブモジュール
14 透明基板
15 受光面電極
15 受光面電極層
16 半導体層
17 裏面電極層
18 分離線
19 分離線
20 分離線
22 接続帯片
23 接続帯片
24 接続帯片
25 区画
25 不活性区画
26 分離線
27 接続点
28 区画
28 裏面電極区画
29 接続点
30 分離線
31 分離線
32 絶縁層
Claims (7)
- 各々に分離線(18、19、20)が形成された、透明な受光面電極層(15)、半導体層(16)及び裏面電極層(17)を有するサブモジュール(11、12、13)が互いに連結され、前記サブモジュールを直列に接続することによって帯状の光起電セル(C)を形成する光起電モジュールであって、
前記サブモジュール(11、12、13)の各々の外側の2つのセル(C1、Cn)は、電流を取り出すためのタップ・セルに構成されており、
前記サブモジュール(11、12、13)の2つの隣接したサブモジュール(11、12又は12、13)の隣接した外側のセルは、単体の共用タップ・セル(C1、Cn)に構成されており、
前記2つの隣接したサブモジュール(11、12又は12、13)の前記分離線(18、19、20)は、前記共用のタップ・セル(C1、Cn)を境にして鏡面対称に配置されており、
さらに、電流出力のために、接続帯片(22、23、24)が、前記タップ・セル(C1、Cn)の前記裏面電極層(17)に接続されている光起電モジュールにおいて、
前記タップ・セル(C1、Cn)はそれぞれ、電流を取り出すために分離線(26、30)によって隔離された、少なくとも2つの間隔をあけた接続区画(25、28)を有するにも拘わらず、前記接触区画(25、28)の外側において光起電性を有する領域の面積が確保されており、
負極の前記タップ・セル(C1)については、分離線(26)が前記受光面電極層(15)に形成され、
正極の前記タップ・セル(Cn)については、分離線(30)が、前記裏面電極層(17)、又は前記裏面電極層(17)と前記半導体層(16)に形成されており、
前記半導体層(16)には、前記間隔をあけた前記接続区画(28)それぞれにおいて、前記正極のタップ・セルの電流を取り出すための、少なくとも1つの付加的な分離線(31)が設けられると共に、前記裏面電極層(17)とは電気的に絶縁されている接続帯片(22)が電流出力のために設けられている
ことを特徴とする光起電モジュール。 - 前記光起電モジュールが偶数のサブモジュール(11、12、13等)からなることを特徴とする請求項1記載の光起電モジュール。
- 前記接続帯片(22、23、24)は、前記タップ・セルそれぞれの、間隔をあけた前記接続区画(25、28)において、前記裏面電極層(17)にはんだ付けにより接続されることを特徴とする請求項1記載の光起電モジュール。
- 前記タップ・セル(C1、Cn)は、はんだ付けを行うときにはんだの金属に接合するための拡散防止層を有することを特徴とする請求項3記載の光起電モジュール。
- 前記接続帯片(22、23、24)は、前記タップ・セルそれぞれの間隔をあけた前記接続区画(25、28)において、前記裏面電極層(17)にはんだ付けにより接続されることを特徴とする請求項1記載の光起電モジュールを製造する方法。
- 前記接続帯片(22、23、24)は、予め錫メッキを施して、融剤によって処理されていることを特徴とする請求項5記載の方法。
- はんだ付けは、前記接続帯片(22、23、24)に高周波エネルギーを誘導結合することによって行われていることを特徴とする請求項5又は6に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006057454A DE102006057454A1 (de) | 2006-12-06 | 2006-12-06 | Photovoltaisches Modul |
DE102006057454.0 | 2006-12-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008147657A JP2008147657A (ja) | 2008-06-26 |
JP5000468B2 true JP5000468B2 (ja) | 2012-08-15 |
Family
ID=39205010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007314110A Expired - Fee Related JP5000468B2 (ja) | 2006-12-06 | 2007-12-05 | 光起電モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US7888585B2 (ja) |
EP (1) | EP1930948A1 (ja) |
JP (1) | JP5000468B2 (ja) |
DE (1) | DE102006057454A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101785112A (zh) * | 2007-12-13 | 2010-07-21 | 第一太阳能有限公司 | 光伏模块的并联互连接的系统和方法 |
DE102008034080A1 (de) * | 2008-07-21 | 2010-01-28 | Robert Bürkle GmbH | Verfahren und Vorrichtung zum Verschalten von Solarzellen in einem Photovoltaikmodul |
DE102008061537A1 (de) * | 2008-12-03 | 2010-06-10 | Aci-Ecotec Gmbh & Co. Kg | Aushärtevorrichtung für photovoltaische Dünnschicht-Solarzellen |
JP5171653B2 (ja) * | 2009-01-07 | 2013-03-27 | 三菱電機株式会社 | 太陽電池とその製造方法 |
JP4633173B2 (ja) * | 2009-01-30 | 2011-02-16 | シャープ株式会社 | 太陽電池モジュールの製造方法 |
DE112010000763T5 (de) | 2009-02-09 | 2013-03-14 | Semprius Inc. | Konzentrator-typ photovoltaik-(cpv) module, empfänger und teilempfänger und verfahren zur ausbildung dergleichen |
KR101072073B1 (ko) * | 2009-06-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양광 발전장치 |
US8779280B2 (en) * | 2009-08-18 | 2014-07-15 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
EP2352171A1 (de) * | 2010-01-29 | 2011-08-03 | Saint-Gobain Glass France | Solarzellenanordnung und Dünnschichtsolarmodul, sowie Herstellungsverfahren hierfür |
DE102010017223A1 (de) | 2010-06-02 | 2011-12-08 | Calyxo Gmbh | Dünnschichtsolarmodul und Herstellungsverfahren hierfür |
DE102010024331B4 (de) | 2010-06-18 | 2023-06-01 | Polytec Pt Gmbh | Verfahren zur Verklebung eines bandförmigen Leiters mit einer Solarzelle, Anordnung mit der Verklebung und Verwendung eines Piezo-Jet-Dispensers dafür |
CN103119730B (zh) * | 2010-07-21 | 2016-05-11 | 第一太阳能有限公司 | 连接组件保护 |
US20120227782A1 (en) * | 2011-03-11 | 2012-09-13 | Auria Solar Co., Ltd. | Low voltage thin film photovoltaic module |
CN102315334A (zh) * | 2011-04-13 | 2012-01-11 | 东旭集团有限公司 | 一种改变额定输出电压的太阳能电池制备工艺 |
DE102011051470A1 (de) * | 2011-06-30 | 2013-01-03 | Solibro Gmbh | Verfahren zur Verschaltung eines Solarmoduls und Kontaktbändchen |
US20130025645A1 (en) * | 2011-07-27 | 2013-01-31 | Du Pont Apollo Ltd. | Asymmetric cell design in solar panels and manufacturing method thereof |
TWI478361B (zh) * | 2011-10-20 | 2015-03-21 | Au Optronics Corp | 太陽能電池模組 |
USD739345S1 (en) | 2013-03-13 | 2015-09-22 | First Solar, Inc. | Photovoltaic device |
US20140261627A1 (en) * | 2013-03-14 | 2014-09-18 | Semprius, Inc. | Power augmentation in concentrator photovoltaic modules by collection of diffuse light |
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DE102017130162B4 (de) * | 2017-12-15 | 2023-06-07 | Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung | Dünnschicht-Photovoltaikmodul mit zwei Ausgangsleistungen |
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2006
- 2006-12-06 DE DE102006057454A patent/DE102006057454A1/de not_active Withdrawn
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2007
- 2007-11-09 EP EP07021748A patent/EP1930948A1/de not_active Withdrawn
- 2007-11-28 US US11/998,156 patent/US7888585B2/en not_active Expired - Fee Related
- 2007-12-05 JP JP2007314110A patent/JP5000468B2/ja not_active Expired - Fee Related
Also Published As
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US20080142070A1 (en) | 2008-06-19 |
DE102006057454A1 (de) | 2008-06-26 |
JP2008147657A (ja) | 2008-06-26 |
US7888585B2 (en) | 2011-02-15 |
EP1930948A1 (de) | 2008-06-11 |
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