JP4997879B2 - 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置 - Google Patents

半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置 Download PDF

Info

Publication number
JP4997879B2
JP4997879B2 JP2006229766A JP2006229766A JP4997879B2 JP 4997879 B2 JP4997879 B2 JP 4997879B2 JP 2006229766 A JP2006229766 A JP 2006229766A JP 2006229766 A JP2006229766 A JP 2006229766A JP 4997879 B2 JP4997879 B2 JP 4997879B2
Authority
JP
Japan
Prior art keywords
layer
gettering
imaging device
solid
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006229766A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007088450A5 (enExample
JP2007088450A (ja
Inventor
信 岩淵
信浩 唐澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006229766A priority Critical patent/JP4997879B2/ja
Publication of JP2007088450A publication Critical patent/JP2007088450A/ja
Publication of JP2007088450A5 publication Critical patent/JP2007088450A5/ja
Application granted granted Critical
Publication of JP4997879B2 publication Critical patent/JP4997879B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2006229766A 2005-08-26 2006-08-25 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置 Expired - Fee Related JP4997879B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006229766A JP4997879B2 (ja) 2005-08-26 2006-08-25 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005245246 2005-08-26
JP2005245246 2005-08-26
JP2006229766A JP4997879B2 (ja) 2005-08-26 2006-08-25 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置

Publications (3)

Publication Number Publication Date
JP2007088450A JP2007088450A (ja) 2007-04-05
JP2007088450A5 JP2007088450A5 (enExample) 2009-10-01
JP4997879B2 true JP4997879B2 (ja) 2012-08-08

Family

ID=37975072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006229766A Expired - Fee Related JP4997879B2 (ja) 2005-08-26 2006-08-25 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置

Country Status (1)

Country Link
JP (1) JP4997879B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103664A (ja) * 2006-09-20 2008-05-01 Fujifilm Corp 裏面照射型撮像素子の製造方法および裏面照射型撮像素子、並びにこれを備えた撮像装置
JP4610586B2 (ja) * 2007-07-02 2011-01-12 富士フイルム株式会社 半導体素子の製造方法
JP5347520B2 (ja) * 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
JP5402040B2 (ja) 2009-02-06 2014-01-29 ソニー株式会社 固体撮像装置及びその製造方法、並びに撮像装置、並びに半導体装置及びその製造方法、並びに半導体基板
JP5453832B2 (ja) * 2009-02-20 2014-03-26 ソニー株式会社 固体撮像装置および撮像装置
JP5773379B2 (ja) * 2009-03-19 2015-09-02 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5279775B2 (ja) * 2010-08-25 2013-09-04 株式会社東芝 半導体装置の製造方法
JP2012174937A (ja) 2011-02-22 2012-09-10 Sony Corp 半導体装置、半導体装置の製造方法、半導体ウエハの貼り合わせ方法及び電子機器
JP5246304B2 (ja) * 2011-07-11 2013-07-24 ソニー株式会社 固体撮像装置の製造方法
JP6612139B2 (ja) * 2016-01-22 2019-11-27 ルネサスエレクトロニクス株式会社 半導体装置
US11605665B2 (en) 2019-10-25 2023-03-14 Canon Kabushiki Kaisha Semiconductor apparatus and method for producing semiconductor apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032209A (ja) * 1996-07-17 1998-02-03 Hitachi Ltd Ｓｏｉウエハおよびその製造方法ならびにそのｓｏｉウエハを用いた半導体集積回路装置
JP4534412B2 (ja) * 2002-06-26 2010-09-01 株式会社ニコン 固体撮像装置
JP4534484B2 (ja) * 2003-12-26 2010-09-01 ソニー株式会社 固体撮像素子及びその製造方法

Also Published As

Publication number Publication date
JP2007088450A (ja) 2007-04-05

Similar Documents

Publication Publication Date Title
JP5268618B2 (ja) 半導体装置
US8618458B2 (en) Back-illuminated CMOS image sensors
US6169319B1 (en) Backside illuminated image sensor
JP5218502B2 (ja) 固体撮像装置の製造方法
JP2011082253A (ja) 固体撮像装置、および、その製造方法、電子機器
JP2013012556A (ja) 固体撮像装置とその製造方法、および電子機器
JP2012199489A (ja) 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP4691939B2 (ja) 裏面照射型固体撮像素子の製造方法
JP2014060199A (ja) 固体撮像装置の製造方法及び固体撮像装置
US9159766B2 (en) Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate
TW201413924A (zh) 影像感測裝置之製造方法
JP2014150231A (ja) 固体撮像装置および同装置の製造方法
JP4997879B2 (ja) 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置
JP2010206134A (ja) 固体撮像装置とその製造方法
JP4479729B2 (ja) 固体撮像装置、電子モジュール及び電子機器
US9312292B2 (en) Back side illumination image sensor and manufacturing method thereof
JP2012114143A (ja) 固体撮像装置および固体撮像装置の製造方法
JP4987749B2 (ja) 固体撮像素子の製造方法
JP2005217439A (ja) 固体撮像素子及びその製造方法
JP2014053431A (ja) 固体撮像装置の製造方法
JP5316667B2 (ja) 固体撮像素子の製造方法
JP5534081B2 (ja) 固体撮像素子の製造方法
JP2006019757A (ja) 固体撮像素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090817

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090817

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090817

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091015

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120326

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120417

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120430

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150525

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees