JP4994248B2 - ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定 - Google Patents

２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定 Download PDF

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JP4994248B2
JP4994248B2 JP2007558164A JP2007558164A JP4994248B2 JP 4994248 B2 JP4994248 B2 JP 4994248B2 JP 2007558164 A JP2007558164 A JP 2007558164A JP 2007558164 A JP2007558164 A JP 2007558164A JP 4994248 B2 JP4994248 B2 JP 4994248B2
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target
targets
periodic
beams
sine wave
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Japanese (ja)
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JP2008532320A (ja
JP2008532320A5 (https=
Inventor
フロマー・アビブ
レビンスキ・ブラディミル
スミス・マーク・ディ．
バイルス・ジェフリー
マック・クリス・エー．
アデル・マイケル・イー．
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2007558164A 2005-03-01 2006-02-28 ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定 Expired - Lifetime JP4994248B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US65805605P 2005-03-01 2005-03-01
US60/658,056 2005-03-01
US72591805P 2005-10-11 2005-10-11
US60/725,918 2005-10-11
PCT/US2006/007195 WO2006094021A2 (en) 2005-03-01 2006-02-28 Target acquisition and overlay metrology based on imaging by two diffracted orders

Publications (3)

Publication Number Publication Date
JP2008532320A JP2008532320A (ja) 2008-08-14
JP2008532320A5 JP2008532320A5 (https=) 2009-03-19
JP4994248B2 true JP4994248B2 (ja) 2012-08-08

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JP2007558164A Expired - Lifetime JP4994248B2 (ja) 2005-03-01 2006-02-28 ２つの回折次数による画像化に基づいたターゲット取得およびオーバレイ測定

Country Status (3)

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US (1) US7528953B2 (https=)
JP (1) JP4994248B2 (https=)
WO (1) WO2006094021A2 (https=)

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US7772710B2 (en) * 2006-11-01 2010-08-10 Sematech, Inc. Zero-order overlay targets
TWI347428B (en) * 2007-11-02 2011-08-21 Ind Tech Res Inst Overlay alignment structure and method for overlay metrology using the same
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NL1036618A1 (nl) * 2008-03-24 2009-09-25 Asml Netherlands Bv Encoder-type measurement system, lithograpic apparatus and method to detect an error on or in a grid or grating of an encoder-type measurement system.
US9223227B2 (en) * 2011-02-11 2015-12-29 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
NL2009001A (en) * 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and patterning devices for measuring phase aberration.
WO2013143814A1 (en) 2012-03-27 2013-10-03 Asml Netherlands B.V. Metrology method and apparatus, lithographic system and device manufacturing method
JP5873212B2 (ja) * 2012-04-12 2016-03-01 エーエスエムエル ネザーランズ ビー．ブイ． 位置測定方法、位置測定装置、リソグラフィ装置及びデバイス製造方法並びに光学要素
US9243886B1 (en) 2012-06-26 2016-01-26 Kla-Tencor Corporation Optical metrology of periodic targets in presence of multiple diffraction orders
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9778025B2 (en) 2012-08-16 2017-10-03 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
NL2011476A (en) 2012-10-02 2014-04-07 Asml Netherlands Bv Position measuring apparatus, position measuring method, lithographic apparatus and device manufacturing method.
NL2011477A (en) * 2012-10-10 2014-04-14 Asml Netherlands Bv Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method.
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
WO2015000673A1 (en) * 2013-07-03 2015-01-08 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
US9719920B2 (en) 2013-07-18 2017-08-01 Kla-Tencor Corporation Scatterometry system and method for generating non-overlapping and non-truncated diffraction images
WO2015009739A1 (en) * 2013-07-18 2015-01-22 Kla-Tencor Corporation Illumination configurations for scatterometry measurements
JP2018517933A (ja) * 2015-06-05 2018-07-05 エーエスエムエル ネザーランズ ビー．ブイ． アライメントシステム
EP3336605A1 (en) 2016-12-15 2018-06-20 ASML Netherlands B.V. Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method
US11281111B2 (en) 2018-08-28 2022-03-22 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
WO2021013483A1 (en) 2019-07-24 2021-01-28 Asml Holding N.V. On chip wafer alignment sensor
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
EP4020084A1 (en) * 2020-12-22 2022-06-29 ASML Netherlands B.V. Metrology method
US11800212B1 (en) 2022-04-08 2023-10-24 Kla Corporation Multi-directional overlay metrology using multiple illumination parameters and isolated imaging
JP7550814B2 (ja) * 2022-05-18 2024-09-13 キヤノン株式会社 検出装置、リソグラフィ装置、物品製造方法および検出システム
CN117572655B (zh) * 2023-11-17 2025-08-26 宜宾学院 一种衍射成像系统及图像的快速复原方法

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Also Published As

Publication number Publication date
US7528953B2 (en) 2009-05-05
JP2008532320A (ja) 2008-08-14
WO2006094021A2 (en) 2006-09-08
WO2006094021A3 (en) 2007-01-11
US20060197951A1 (en) 2006-09-07

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