JP4993938B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4993938B2
JP4993938B2 JP2006105193A JP2006105193A JP4993938B2 JP 4993938 B2 JP4993938 B2 JP 4993938B2 JP 2006105193 A JP2006105193 A JP 2006105193A JP 2006105193 A JP2006105193 A JP 2006105193A JP 4993938 B2 JP4993938 B2 JP 4993938B2
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Japan
Prior art keywords
film
plasma
insulating film
glass substrate
gate electrode
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Expired - Fee Related
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JP2006105193A
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English (en)
Japanese (ja)
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JP2006332606A5 (enrdf_load_stackoverflow
JP2006332606A (ja
Inventor
康行 荒井
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006105193A priority Critical patent/JP4993938B2/ja
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Publication of JP2006332606A5 publication Critical patent/JP2006332606A5/ja
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  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2006105193A 2005-04-28 2006-04-06 半導体装置の作製方法 Expired - Fee Related JP4993938B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006105193A JP4993938B2 (ja) 2005-04-28 2006-04-06 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133713 2005-04-28
JP2005133713 2005-04-28
JP2006105193A JP4993938B2 (ja) 2005-04-28 2006-04-06 半導体装置の作製方法

Related Child Applications (1)

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JP2011235716A Division JP4994513B2 (ja) 2005-04-28 2011-10-27 半導体装置の作製方法

Publications (3)

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JP2006332606A JP2006332606A (ja) 2006-12-07
JP2006332606A5 JP2006332606A5 (enrdf_load_stackoverflow) 2009-03-19
JP4993938B2 true JP4993938B2 (ja) 2012-08-08

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ID=37553920

Family Applications (1)

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JP2006105193A Expired - Fee Related JP4993938B2 (ja) 2005-04-28 2006-04-06 半導体装置の作製方法

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JP (1) JP4993938B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101523577A (zh) * 2006-09-29 2009-09-02 东京毅力科创株式会社 硅氧化膜的形成方法，等离子体处理装置以及存储介质
US8420456B2 (en) 2007-06-12 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing for thin film transistor
KR101015338B1 (ko) 2008-03-13 2011-02-16 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조방법
KR101634411B1 (ko) 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR102106460B1 (ko) * 2009-07-03 2020-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8704230B2 (en) * 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9202822B2 (en) * 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9401396B2 (en) 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
WO2015137022A1 (ja) * 2014-03-14 2015-09-17 ソニー株式会社 電子デバイス及びその製造方法
US20190371829A1 (en) * 2017-02-28 2019-12-05 Sharp Kabushiki Kaisha Method for manufacturing active matrix substrate and method for manufacturing organic el display
WO2018163287A1 (ja) * 2017-03-07 2018-09-13 シャープ株式会社 アクティブマトリクス基板の製造方法、有機ｅｌ表示装置の製造方法およびアクティブマトリクス基板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS644070A (en) * 1987-06-26 1989-01-09 Hitachi Ltd Thin film transistor and manufacture thereof
JPH031572A (ja) * 1989-05-29 1991-01-08 Fujitsu Ltd 薄膜トランジスタマトリクス及びその製造方法
KR960002086B1 (ko) * 1993-04-16 1996-02-10 엘지전자주식회사 박막 트랜지스터의 제조방법
JPH06338492A (ja) * 1993-05-31 1994-12-06 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法、および薄膜トランジスタ用ゲート絶縁膜の製造方法
JP2001147424A (ja) * 1999-11-19 2001-05-29 Hitachi Ltd 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method

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JP2006332606A (ja) 2006-12-07

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