JP4992220B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

Info

Publication number
JP4992220B2
JP4992220B2 JP2005298125A JP2005298125A JP4992220B2 JP 4992220 B2 JP4992220 B2 JP 4992220B2 JP 2005298125 A JP2005298125 A JP 2005298125A JP 2005298125 A JP2005298125 A JP 2005298125A JP 4992220 B2 JP4992220 B2 JP 4992220B2
Authority
JP
Japan
Prior art keywords
substrate
groove
manufacturing
separation
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005298125A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007109822A5 (enExample
JP2007109822A (ja
Inventor
広昭 為本
元章 萬藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2005298125A priority Critical patent/JP4992220B2/ja
Publication of JP2007109822A publication Critical patent/JP2007109822A/ja
Publication of JP2007109822A5 publication Critical patent/JP2007109822A5/ja
Application granted granted Critical
Publication of JP4992220B2 publication Critical patent/JP4992220B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Dicing (AREA)
JP2005298125A 2005-10-12 2005-10-12 半導体素子の製造方法 Expired - Lifetime JP4992220B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005298125A JP4992220B2 (ja) 2005-10-12 2005-10-12 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005298125A JP4992220B2 (ja) 2005-10-12 2005-10-12 半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JP2007109822A JP2007109822A (ja) 2007-04-26
JP2007109822A5 JP2007109822A5 (enExample) 2008-11-27
JP4992220B2 true JP4992220B2 (ja) 2012-08-08

Family

ID=38035461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005298125A Expired - Lifetime JP4992220B2 (ja) 2005-10-12 2005-10-12 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JP4992220B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109015A (ja) * 2008-10-28 2010-05-13 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
JP5416081B2 (ja) * 2010-12-27 2014-02-12 古河電気工業株式会社 ウエハ貼着用粘着シート、ウエハの個片化方法、およびチップの製造方法
JP5886524B2 (ja) * 2011-01-07 2016-03-16 株式会社ディスコ 光デバイスウェーハの加工方法
JP5656748B2 (ja) * 2011-05-16 2015-01-21 シチズンホールディングス株式会社 半導体発光素子の製造方法
EP2985785B1 (en) * 2013-04-10 2023-12-20 Mitsubishi Electric Corporation Method of manufacturing a semiconductor device with prevention of adhesive climbing up and corresponding semiconductor device
US9543465B2 (en) 2014-05-20 2017-01-10 Nichia Corporation Method for manufacturing light emitting device
US9728509B1 (en) 2016-05-05 2017-08-08 Globalfoundries Inc. Laser scribe structures for a wafer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3449201B2 (ja) * 1997-11-28 2003-09-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP2002043251A (ja) * 2000-07-25 2002-02-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP2004165226A (ja) * 2002-11-08 2004-06-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP2004228218A (ja) * 2003-01-21 2004-08-12 Disco Abrasive Syst Ltd 半導体チップの処理方法
JP2004289047A (ja) * 2003-03-25 2004-10-14 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JP3813599B2 (ja) * 2003-06-13 2006-08-23 ローム株式会社 白色発光の発光ダイオード素子を製造する方法
JP4398686B2 (ja) * 2003-09-11 2010-01-13 株式会社ディスコ ウエーハの加工方法
JP4427308B2 (ja) * 2003-12-10 2010-03-03 株式会社ディスコ 半導体ウェーハの分割方法
JP2005244198A (ja) * 2004-01-26 2005-09-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4402971B2 (ja) * 2004-02-03 2010-01-20 株式会社ディスコ ウエーハの分割方法
KR101119727B1 (ko) * 2004-03-31 2012-03-23 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 발광 소자
JP2005322738A (ja) * 2004-05-07 2005-11-17 Toshiba Corp 半導体装置の製造方法
JP4564393B2 (ja) * 2005-04-11 2010-10-20 パナソニック株式会社 半導体固片の仕上げ加工方法

Also Published As

Publication number Publication date
JP2007109822A (ja) 2007-04-26

Similar Documents

Publication Publication Date Title
KR100579028B1 (ko) 반도체 소자 및 그 제조 방법
JP3230572B2 (ja) 窒化物系化合物半導体素子の製造方法及び半導体発光素子
JP5179068B2 (ja) 化合物半導体素子の製造方法
JP3904585B2 (ja) 半導体素子の製造方法
US7939429B2 (en) Nitride semiconductor device and method of manufacturing the same
JP2780618B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JPH11163403A (ja) 窒化物半導体素子の製造方法
CN1965393A (zh) 化合物半导体器件晶片的制造方法
US20100102341A1 (en) Semiconductor light emitting device and method for manufacturing the same
CN101106103A (zh) 发光元件的制造方法
KR20070007137A (ko) 화합물 반도체 발광소자 웨이퍼의 제조방법
JP2001284291A (ja) 半導体ウエハーのチップ分割方法
JP5377016B2 (ja) 半導体装置の製造方法
JP2861991B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法
JP4639520B2 (ja) 窒化物半導体チップの製造方法
JP2002252185A (ja) 窒化物半導体チップの製造方法
JP4992220B2 (ja) 半導体素子の製造方法
JP2765644B2 (ja) 窒化ガリウム系化合物半導体ウエハーの切断方法
JP2910811B2 (ja) 窒化ガリウム系化合物半導体ウエハーの切断方法
JP3227287B2 (ja) 窒化ガリウム系化合物半導体チップの製造方法と窒化ガリウム系化合物半導体素子
TWI775789B (zh) 光裝置晶圓的加工方法
JP4594707B2 (ja) 半導体チップ製造方法
JP2004165226A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US20040198024A1 (en) Method for cutting semiconductor wafer using laser scribing process
JP5716524B2 (ja) 発光素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081014

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081014

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110530

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110830

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111031

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120410

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120423

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150518

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4992220

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150518

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250