JP4990287B2 - 波長が193nm以下の照明システム用集光器 - Google Patents

波長が193nm以下の照明システム用集光器 Download PDF

Info

Publication number
JP4990287B2
JP4990287B2 JP2008535955A JP2008535955A JP4990287B2 JP 4990287 B2 JP4990287 B2 JP 4990287B2 JP 2008535955 A JP2008535955 A JP 2008535955A JP 2008535955 A JP2008535955 A JP 2008535955A JP 4990287 B2 JP4990287 B2 JP 4990287B2
Authority
JP
Japan
Prior art keywords
illumination
mirror
concentrator
mirror shell
shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008535955A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009512223A5 (enExample
JP2009512223A (ja
Inventor
ヨアヒム ハインツ
マルティン エンドレス
ヴォルフガング ジンガー
ベルント クレーマン
ディーター バーダー
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2009512223A publication Critical patent/JP2009512223A/ja
Publication of JP2009512223A5 publication Critical patent/JP2009512223A5/ja
Application granted granted Critical
Publication of JP4990287B2 publication Critical patent/JP4990287B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70166Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70175Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008535955A 2005-10-18 2006-10-17 波長が193nm以下の照明システム用集光器 Expired - Fee Related JP4990287B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72789205P 2005-10-18 2005-10-18
US60/727,892 2005-10-18
PCT/EP2006/010004 WO2007045434A2 (de) 2005-10-18 2006-10-17 Kollektor für beleuchtungssysteme mit einer wellenlänge ≤ 193 nm

Publications (3)

Publication Number Publication Date
JP2009512223A JP2009512223A (ja) 2009-03-19
JP2009512223A5 JP2009512223A5 (enExample) 2009-07-16
JP4990287B2 true JP4990287B2 (ja) 2012-08-01

Family

ID=37698183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008535955A Expired - Fee Related JP4990287B2 (ja) 2005-10-18 2006-10-17 波長が193nm以下の照明システム用集光器

Country Status (5)

Country Link
US (1) US20080225387A1 (enExample)
EP (1) EP1938150B1 (enExample)
JP (1) JP4990287B2 (enExample)
DE (1) DE502006009171D1 (enExample)
WO (1) WO2007045434A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007045396A1 (de) 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle
EP2083327B1 (en) * 2008-01-28 2017-11-29 Media Lario s.r.l. Improved grazing incidence collector optical systems for EUV and X-ray applications
DE102008000967B4 (de) * 2008-04-03 2015-04-09 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die EUV-Mikrolithographie
DE102009030501A1 (de) * 2009-06-24 2011-01-05 Carl Zeiss Smt Ag Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes
DE102009054540B4 (de) * 2009-12-11 2011-11-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Mikrolithographie
EP2517066B1 (en) * 2009-12-21 2022-02-23 Harman Professional Denmark ApS Projecting illumination device with multiple light sources
KR102160046B1 (ko) 2010-04-02 2020-09-28 가부시키가이샤 니콘 조명 광학계, 노광 방법 및 디바이스 제조 방법
DE102010029049B4 (de) * 2010-05-18 2014-03-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
DE102011016058B4 (de) * 2011-04-01 2012-11-29 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur Einstellung von Eigenschaften eines Strahlenbündels aus einem Plasma emittierter hochenergetischer Strahlung
DE102011076297A1 (de) * 2011-05-23 2012-11-29 Carl Zeiss Smt Gmbh Blende
DE102011076460A1 (de) * 2011-05-25 2012-11-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik
DE102013204441A1 (de) 2013-03-14 2014-04-03 Carl Zeiss Smt Gmbh Kollektor
DE102013218132A1 (de) 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Kollektor
DE102013218128A1 (de) 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Beleuchtungssystem
DE102015201138A1 (de) * 2015-01-23 2016-01-28 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102018207103A1 (de) 2018-05-08 2019-03-21 Carl Zeiss Smt Gmbh Feldfacettenspiegel
DE102018214559A1 (de) 2018-08-28 2019-09-12 Carl Zeiss Smt Gmbh Optische Anordnung und EUV-Lithographievorrichtung damit
US11543753B2 (en) 2019-10-30 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Tunable illuminator for lithography systems

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2077740A (en) * 1934-03-30 1937-04-20 Martha W Caughlan Reflecting surface
DE3340462C1 (de) * 1983-11-09 1985-04-18 Westfälische Metall Industrie KG Hueck & Co, 4780 Lippstadt Abgeblendeter Fahrzeugscheinwerfer
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
DE10053587A1 (de) * 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US6195201B1 (en) * 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US6600552B2 (en) * 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
DE19935568A1 (de) * 1999-07-30 2001-02-15 Zeiss Carl Fa Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems
DE10138284A1 (de) * 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren
WO2003014833A2 (de) * 2001-08-10 2003-02-20 Carl Zeiss Smt Ag Kollektor mit befestigungseinrichtungen zum befestigen von spiegelschalen
DE10208854A1 (de) * 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille
US7084412B2 (en) * 2002-03-28 2006-08-01 Carl Zeiss Smt Ag Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm
DE10214259A1 (de) 2002-03-28 2003-10-23 Zeiss Carl Semiconductor Mfg Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm
DE10219514A1 (de) * 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
EP1573402B1 (en) * 2002-12-19 2008-03-12 Carl Zeiss SMT AG Illumination system having a more efficient collector optic
US7481544B2 (en) * 2004-03-05 2009-01-27 Optical Research Associates Grazing incidence relays
JP2006245147A (ja) * 2005-03-01 2006-09-14 Canon Inc 投影光学系、露光装置及びデバイスの製造方法

Also Published As

Publication number Publication date
DE502006009171D1 (de) 2011-05-05
WO2007045434A2 (de) 2007-04-26
EP1938150B1 (de) 2011-03-23
EP1938150A2 (de) 2008-07-02
US20080225387A1 (en) 2008-09-18
WO2007045434A3 (de) 2007-07-19
JP2009512223A (ja) 2009-03-19

Similar Documents

Publication Publication Date Title
JP4990287B2 (ja) 波長が193nm以下の照明システム用集光器
JP5654348B2 (ja) 放射線源の放射光を集めるための光束誘導光学集光器
US6927403B2 (en) Illumination system that suppresses debris from a light source
JP4261803B2 (ja) 波長が193nm以下の照明光学系のための集光器
JP5525550B2 (ja) マイクロリソグラフィ用の照明光学系及び光学系
TWI714524B (zh) 用於投影微影的照明光學單元、光瞳琢面反射鏡、光學系統、照明系統、投影曝光裝置、用以產生一微結構組件之方法以及微結構組件
JP5410283B2 (ja) 集光光学系
US6014252A (en) Reflective optical imaging system
US7321126B2 (en) Collector with fastening devices for fastening mirror shells
EP1649324B1 (en) An illumination system for microlithography
US8594277B2 (en) Grazing incidence collector optical systems for EUV and X-ray applications
JP6221159B2 (ja) コレクター
CN104769503B (zh) Euv集光器
JP2008544531A (ja) 瞳ファセットミラー上に減衰素子を備えた二重ファセット照明光学系
JP2004512552A (ja) 8反射鏡型マイクロリソグラフィ用投影光学系
JP4918542B2 (ja) 6枚の反射鏡を備えたeuv投影光学系
US9810992B2 (en) Illumination system
JP5896313B2 (ja) 結像光学系及びこの種の結像光学系を備えたマイクロリソグラフィ用の投影露光装置
JP2000162415A (ja) 反射鏡の製造方法又は反射型照明装置又は半導体露光装置
JP2006237614A (ja) 投影光学系及びこれを適用した極紫外線リソグラフィ装置
JP2014168080A (ja) マイクロリソグラフィ用の照明光学系及び光学系

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090529

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090529

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110915

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120402

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120501

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4990287

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150511

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees