JP4990287B2 - 波長が193nm以下の照明システム用集光器 - Google Patents
波長が193nm以下の照明システム用集光器 Download PDFInfo
- Publication number
- JP4990287B2 JP4990287B2 JP2008535955A JP2008535955A JP4990287B2 JP 4990287 B2 JP4990287 B2 JP 4990287B2 JP 2008535955 A JP2008535955 A JP 2008535955A JP 2008535955 A JP2008535955 A JP 2008535955A JP 4990287 B2 JP4990287 B2 JP 4990287B2
- Authority
- JP
- Japan
- Prior art keywords
- illumination
- mirror
- concentrator
- mirror shell
- shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005286 illumination Methods 0.000 title claims description 207
- 230000003287 optical effect Effects 0.000 claims description 103
- 210000001747 pupil Anatomy 0.000 claims description 64
- 230000005855 radiation Effects 0.000 claims description 11
- 238000001393 microlithography Methods 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 14
- 230000008859 change Effects 0.000 description 5
- 201000009310 astigmatism Diseases 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 210000000887 face Anatomy 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72789205P | 2005-10-18 | 2005-10-18 | |
| US60/727,892 | 2005-10-18 | ||
| PCT/EP2006/010004 WO2007045434A2 (de) | 2005-10-18 | 2006-10-17 | Kollektor für beleuchtungssysteme mit einer wellenlänge ≤ 193 nm |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009512223A JP2009512223A (ja) | 2009-03-19 |
| JP2009512223A5 JP2009512223A5 (enExample) | 2009-07-16 |
| JP4990287B2 true JP4990287B2 (ja) | 2012-08-01 |
Family
ID=37698183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008535955A Expired - Fee Related JP4990287B2 (ja) | 2005-10-18 | 2006-10-17 | 波長が193nm以下の照明システム用集光器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080225387A1 (enExample) |
| EP (1) | EP1938150B1 (enExample) |
| JP (1) | JP4990287B2 (enExample) |
| DE (1) | DE502006009171D1 (enExample) |
| WO (1) | WO2007045434A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007045396A1 (de) | 2007-09-21 | 2009-04-23 | Carl Zeiss Smt Ag | Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle |
| EP2083327B1 (en) * | 2008-01-28 | 2017-11-29 | Media Lario s.r.l. | Improved grazing incidence collector optical systems for EUV and X-ray applications |
| DE102008000967B4 (de) * | 2008-04-03 | 2015-04-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
| DE102009030501A1 (de) * | 2009-06-24 | 2011-01-05 | Carl Zeiss Smt Ag | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes |
| DE102009054540B4 (de) * | 2009-12-11 | 2011-11-10 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Mikrolithographie |
| EP2517066B1 (en) * | 2009-12-21 | 2022-02-23 | Harman Professional Denmark ApS | Projecting illumination device with multiple light sources |
| KR102160046B1 (ko) | 2010-04-02 | 2020-09-28 | 가부시키가이샤 니콘 | 조명 광학계, 노광 방법 및 디바이스 제조 방법 |
| DE102010029049B4 (de) * | 2010-05-18 | 2014-03-13 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik |
| DE102011016058B4 (de) * | 2011-04-01 | 2012-11-29 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur Einstellung von Eigenschaften eines Strahlenbündels aus einem Plasma emittierter hochenergetischer Strahlung |
| DE102011076297A1 (de) * | 2011-05-23 | 2012-11-29 | Carl Zeiss Smt Gmbh | Blende |
| DE102011076460A1 (de) * | 2011-05-25 | 2012-11-29 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik |
| DE102013204441A1 (de) | 2013-03-14 | 2014-04-03 | Carl Zeiss Smt Gmbh | Kollektor |
| DE102013218132A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Kollektor |
| DE102013218128A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
| DE102015201138A1 (de) * | 2015-01-23 | 2016-01-28 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
| DE102018207103A1 (de) | 2018-05-08 | 2019-03-21 | Carl Zeiss Smt Gmbh | Feldfacettenspiegel |
| DE102018214559A1 (de) | 2018-08-28 | 2019-09-12 | Carl Zeiss Smt Gmbh | Optische Anordnung und EUV-Lithographievorrichtung damit |
| US11543753B2 (en) | 2019-10-30 | 2023-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tunable illuminator for lithography systems |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2077740A (en) * | 1934-03-30 | 1937-04-20 | Martha W Caughlan | Reflecting surface |
| DE3340462C1 (de) * | 1983-11-09 | 1985-04-18 | Westfälische Metall Industrie KG Hueck & Co, 4780 Lippstadt | Abgeblendeter Fahrzeugscheinwerfer |
| DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| DE10053587A1 (de) * | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
| EP0955641B1 (de) | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| US6195201B1 (en) * | 1999-01-27 | 2001-02-27 | Svg Lithography Systems, Inc. | Reflective fly's eye condenser for EUV lithography |
| US6600552B2 (en) * | 1999-02-15 | 2003-07-29 | Carl-Zeiss Smt Ag | Microlithography reduction objective and projection exposure apparatus |
| US7248667B2 (en) * | 1999-05-04 | 2007-07-24 | Carl Zeiss Smt Ag | Illumination system with a grating element |
| DE19935568A1 (de) * | 1999-07-30 | 2001-02-15 | Zeiss Carl Fa | Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems |
| DE10138284A1 (de) * | 2001-08-10 | 2003-02-27 | Zeiss Carl | Beleuchtungssystem mit genesteten Kollektoren |
| WO2003014833A2 (de) * | 2001-08-10 | 2003-02-20 | Carl Zeiss Smt Ag | Kollektor mit befestigungseinrichtungen zum befestigen von spiegelschalen |
| DE10208854A1 (de) * | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille |
| US7084412B2 (en) * | 2002-03-28 | 2006-08-01 | Carl Zeiss Smt Ag | Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm |
| DE10214259A1 (de) | 2002-03-28 | 2003-10-23 | Zeiss Carl Semiconductor Mfg | Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm |
| DE10219514A1 (de) * | 2002-04-30 | 2003-11-13 | Zeiss Carl Smt Ag | Beleuchtungssystem, insbesondere für die EUV-Lithographie |
| EP1573402B1 (en) * | 2002-12-19 | 2008-03-12 | Carl Zeiss SMT AG | Illumination system having a more efficient collector optic |
| US7481544B2 (en) * | 2004-03-05 | 2009-01-27 | Optical Research Associates | Grazing incidence relays |
| JP2006245147A (ja) * | 2005-03-01 | 2006-09-14 | Canon Inc | 投影光学系、露光装置及びデバイスの製造方法 |
-
2006
- 2006-10-17 WO PCT/EP2006/010004 patent/WO2007045434A2/de not_active Ceased
- 2006-10-17 EP EP06806336A patent/EP1938150B1/de not_active Not-in-force
- 2006-10-17 JP JP2008535955A patent/JP4990287B2/ja not_active Expired - Fee Related
- 2006-10-17 DE DE502006009171T patent/DE502006009171D1/de active Active
-
2008
- 2008-03-21 US US12/053,305 patent/US20080225387A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE502006009171D1 (de) | 2011-05-05 |
| WO2007045434A2 (de) | 2007-04-26 |
| EP1938150B1 (de) | 2011-03-23 |
| EP1938150A2 (de) | 2008-07-02 |
| US20080225387A1 (en) | 2008-09-18 |
| WO2007045434A3 (de) | 2007-07-19 |
| JP2009512223A (ja) | 2009-03-19 |
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