JP4986373B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4986373B2
JP4986373B2 JP2003346862A JP2003346862A JP4986373B2 JP 4986373 B2 JP4986373 B2 JP 4986373B2 JP 2003346862 A JP2003346862 A JP 2003346862A JP 2003346862 A JP2003346862 A JP 2003346862A JP 4986373 B2 JP4986373 B2 JP 4986373B2
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Japan
Prior art keywords
insulating film
region
film
auxiliary electrode
tft
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Expired - Fee Related
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JP2003346862A
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Japanese (ja)
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JP2004153255A5 (enExample
JP2004153255A (ja
Inventor
達也 荒尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2003346862A priority Critical patent/JP4986373B2/ja
Publication of JP2004153255A publication Critical patent/JP2004153255A/ja
Publication of JP2004153255A5 publication Critical patent/JP2004153255A5/ja
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Publication of JP4986373B2 publication Critical patent/JP4986373B2/ja
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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003346862A 2002-10-07 2003-10-06 半導体装置およびその作製方法 Expired - Fee Related JP4986373B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003346862A JP4986373B2 (ja) 2002-10-07 2003-10-06 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002293499 2002-10-07
JP2002293499 2002-10-07
JP2003346862A JP4986373B2 (ja) 2002-10-07 2003-10-06 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2004153255A JP2004153255A (ja) 2004-05-27
JP2004153255A5 JP2004153255A5 (enExample) 2006-11-24
JP4986373B2 true JP4986373B2 (ja) 2012-07-25

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ID=32473473

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Application Number Title Priority Date Filing Date
JP2003346862A Expired - Fee Related JP4986373B2 (ja) 2002-10-07 2003-10-06 半導体装置およびその作製方法

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JP (1) JP4986373B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4939809B2 (ja) 2005-01-21 2012-05-30 株式会社半導体エネルギー研究所 発光装置
JP5084134B2 (ja) 2005-11-21 2012-11-28 日本電気株式会社 表示装置及びこれらを用いた機器
US8148236B2 (en) * 2007-11-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
JP6143114B2 (ja) * 2015-03-09 2017-06-07 Ｎｌｔテクノロジー株式会社 表示装置
KR102585853B1 (ko) * 2017-10-12 2023-10-06 엘지디스플레이 주식회사 표시 장치용 기판과 그를 포함하는 표시 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666103B2 (ja) * 1992-06-03 1997-10-22 カシオ計算機株式会社 薄膜半導体装置
JPH0786599A (ja) * 1993-09-17 1995-03-31 Fuji Xerox Co Ltd 薄膜半導体装置
KR0151195B1 (ko) * 1994-09-13 1998-10-01 문정환 박막 트랜지스터의 구조 및 제조방법

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JP2004153255A (ja) 2004-05-27

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