JP4986337B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4986337B2
JP4986337B2 JP2001163739A JP2001163739A JP4986337B2 JP 4986337 B2 JP4986337 B2 JP 4986337B2 JP 2001163739 A JP2001163739 A JP 2001163739A JP 2001163739 A JP2001163739 A JP 2001163739A JP 4986337 B2 JP4986337 B2 JP 4986337B2
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JP
Japan
Prior art keywords
film
semiconductor film
region
insulating film
semiconductor
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Expired - Fee Related
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JP2001163739A
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Japanese (ja)
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JP2002057166A (ja
JP2002057166A5 (enExample
Inventor
智史 吉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001163739A priority Critical patent/JP4986337B2/ja
Publication of JP2002057166A publication Critical patent/JP2002057166A/ja
Publication of JP2002057166A5 publication Critical patent/JP2002057166A5/ja
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Publication of JP4986337B2 publication Critical patent/JP4986337B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001163739A 2000-06-02 2001-05-31 半導体装置の作製方法 Expired - Fee Related JP4986337B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001163739A JP4986337B2 (ja) 2000-06-02 2001-05-31 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-165708 2000-06-02
JP2000165708 2000-06-02
JP2000165708 2000-06-02
JP2001163739A JP4986337B2 (ja) 2000-06-02 2001-05-31 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002057166A JP2002057166A (ja) 2002-02-22
JP2002057166A5 JP2002057166A5 (enExample) 2008-07-10
JP4986337B2 true JP4986337B2 (ja) 2012-07-25

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Family Applications (1)

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JP2001163739A Expired - Fee Related JP4986337B2 (ja) 2000-06-02 2001-05-31 半導体装置の作製方法

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JP (1) JP4986337B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119328319A (zh) * 2024-11-27 2025-01-21 中国华能集团清洁能源技术研究院有限公司 电池组件刻划方法、装置及系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296864A (en) * 1976-02-09 1977-08-15 Motorola Inc Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor
JPH01128575A (ja) * 1987-11-13 1989-05-22 Fujitsu Ltd 半導体装置の製造方法
JP2876598B2 (ja) * 1988-04-27 1999-03-31 セイコーエプソン株式会社 半導体装置の製造方法
JPH0677484A (ja) * 1992-08-27 1994-03-18 Sharp Corp 薄膜トランジスタ及びその製造方法
JP3675886B2 (ja) * 1995-03-17 2005-07-27 株式会社半導体エネルギー研究所 薄膜半導体デバイスの作製方法
CA2256699C (en) * 1996-05-28 2003-02-25 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
JP2001345454A (ja) * 2000-03-27 2001-12-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

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JP2002057166A (ja) 2002-02-22

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