JP4986332B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4986332B2
JP4986332B2 JP2001079661A JP2001079661A JP4986332B2 JP 4986332 B2 JP4986332 B2 JP 4986332B2 JP 2001079661 A JP2001079661 A JP 2001079661A JP 2001079661 A JP2001079661 A JP 2001079661A JP 4986332 B2 JP4986332 B2 JP 4986332B2
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Japan
Prior art keywords
film
silicon film
laser
tft
laser beam
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Expired - Fee Related
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JP2001079661A
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Japanese (ja)
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JP2001338873A (ja
JP2001338873A5 (enExample
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001079661A priority Critical patent/JP4986332B2/ja
Publication of JP2001338873A publication Critical patent/JP2001338873A/ja
Publication of JP2001338873A5 publication Critical patent/JP2001338873A5/ja
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Publication of JP4986332B2 publication Critical patent/JP4986332B2/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001079661A 2000-03-21 2001-03-21 半導体装置の作製方法 Expired - Fee Related JP4986332B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001079661A JP4986332B2 (ja) 2000-03-21 2001-03-21 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000079159 2000-03-21
JP2000079159 2000-03-21
JP2000-79159 2000-03-21
JP2001079661A JP4986332B2 (ja) 2000-03-21 2001-03-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001338873A JP2001338873A (ja) 2001-12-07
JP2001338873A5 JP2001338873A5 (enExample) 2007-06-14
JP4986332B2 true JP4986332B2 (ja) 2012-07-25

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JP2001079661A Expired - Fee Related JP4986332B2 (ja) 2000-03-21 2001-03-21 半導体装置の作製方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078322B2 (en) 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
JP2003229359A (ja) * 2001-11-29 2003-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6906349B2 (en) * 2003-01-08 2005-06-14 Samsung Electronics Co., Ltd. Polysilicon thin film transistor array panel and manufacturing method thereof
KR101102261B1 (ko) 2004-09-15 2012-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP4935059B2 (ja) 2005-02-17 2012-05-23 三菱電機株式会社 半導体装置の製造方法
JP5227563B2 (ja) * 2006-10-26 2013-07-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5339322B2 (ja) * 2007-04-20 2013-11-13 国立大学法人山口大学 レーザによるシリコン結晶成長方法
JP5213192B2 (ja) * 2009-05-01 2013-06-19 株式会社日本製鋼所 結晶質膜の製造方法および製造装置
WO2019234856A1 (ja) * 2018-06-06 2019-12-12 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2817613B2 (ja) * 1994-02-23 1998-10-30 日本電気株式会社 結晶シリコン膜の形成方法
JP3433856B2 (ja) * 1995-02-22 2003-08-04 住友重機械工業株式会社 非晶質薄膜結晶化方法
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
JP2000269133A (ja) * 1999-03-16 2000-09-29 Seiko Epson Corp 薄膜半導体装置の製造方法

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JP2001338873A (ja) 2001-12-07

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