JP4984621B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP4984621B2 JP4984621B2 JP2006114255A JP2006114255A JP4984621B2 JP 4984621 B2 JP4984621 B2 JP 4984621B2 JP 2006114255 A JP2006114255 A JP 2006114255A JP 2006114255 A JP2006114255 A JP 2006114255A JP 4984621 B2 JP4984621 B2 JP 4984621B2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- Led Device Packages (AREA)
Description
以下、本発明の実施の形態の各構成について詳述する。
本形態における発光素子は、半導体発光素子であり、発光ダイオードやレーザダイオードを用いることができる。
本形態における温度センサには、サーミスタや白金測温抵抗体、水晶温度センサ、熱電対、IC化温度センサ、水銀、アルコール温度計等、全ての温度センサが含まれる。封止樹脂のなかに収まる大きさであればよいが、小さいほうが発光装置を小型化することができ好ましい。また、載置位置については、発光素子近傍に載置することにより、さらに測定精度を高くすることができるので好ましい。しかしながら、発光素子近傍に温度センサを載置すると発光素子の光取出しを妨げる場合があるので、その場合は図1に示したように発光素子の下部など、発光素子からの光取出しを妨げない位置に温度センサを載置すると、光取出しの低下を抑制することができる。
本形態における支持体は、発光素子と温度センサとを載置するものであり、その温度を速やかに温度センサに伝えるものが好ましい。したがって、金属等の熱伝導性が高いものが好ましい。支持体全体を金属で形成するのが好ましく、具体的には、銅、アルミニウム、金、銀、タングステン、鉄、ニッケル等の金属又は鉄−ニッケル合金、燐青銅、鉄入り銅等あるいはこれらの表面に銀、アルミニウム、銅、金等の金属メッキ膜が施こされたもの等が挙げられる。
本形態における透光性樹脂は、発光素子や温度センサなどを外部から保護するために設けられ、また、発光素子と温度センサとを一体に封止して発光素子から温度センサへの熱循環を良くする目的を持つ。また、さらに、視野角を広げたり、発光素子からの指向性を緩和したり、発光を収束、拡散させたりする目的も持たせることができる。これらの目的を達成するために、透光性樹脂は、所望の形状に形成される。すなわち、目的に合わせて凸レンズ形状、凹レンズ形状の他、複数積層する構造であっても良い。透光性樹脂の具体的材料としては、エポキシ樹脂、シリコーン樹脂、アクリル樹脂、ポリカーボネート樹脂、非晶質ポリオレフィン樹脂、ポリスチレン樹脂、ノルボルネン系樹脂、シクロオレフィンポリマー(COP)等が挙げられる。
本形態における温度制御素子には、ペルチェ素子等の吸熱および放熱の少なくとも一方を行うことのできる全ての素子が含まれる。発光装置の用途および発光素子に流す電流の大きさ等によって、様々な大きさのものが用いることができ、ペルチェ素子自身の発熱や載置場所を考慮して、適宜選択される。発光素子を載置した支持体に密着させると、より直接的に温度を制御することができる。
この実施例の半導体装置は、図1に示すように、砲弾型の半導体発光装置である。
本実施例の半導体装置は、図2に示すように、実施例1で示した温度センサ内蔵の半導体発光素子に、温度制御素子であるペルチェ素子209を備えたものである。ペルチェ素子209は接着材により、発光素子(図示せず)と温度センサ202の搭載された支持体203に略密着するように接続されている。温度センサ202で計測した温度を基に、ペルチェ素子209で発光部の温度を制御することができ、発光素子自身の発熱や周囲温度の急激な変化があっても、安定した光度・色調で発光素子を点灯させることができる。
以下、本発明の実施例2の比較例を述べる。
本実施例の半導体装置は、図3に示すように、実施例1で示した温度センサ内蔵の半導体発光素子に、温度制御素子であるペルチェ素子409を備えたものである。実施例2の発光装置がペルチェ素子と接着材で接続されているのに対し、本実施例の半導体装置では、ペルチェ素子309がソケット310に収納されており、このソケット310が実施例1で示した発光装置と着脱可能となっている。治具内には発光素子駆動用の電源と繋ぐための配線や、温度センサ駆動用、ペルチェ素子駆動用の電源と繋ぐための配線が施されている。
102、202、302、402、502 温度センサ
103、203、303、503 支持体
104a、104b、204、304、504 透光性樹脂
105 発光素子のアノード電極
106 発光素子のカソード電極
107a、107b 温度センサ用端子
108 導電性ワイヤ
209、309、509 ペルチェ素子
310 ソケット
311 ボタン
312 発光装置保持部
313 ねじ穴
Claims (5)
- 発光素子と、
絶縁性の基板の両端に電極を有する温度センサと、
前記発光素子と、前記温度センサと、を載置する支持体と、を備え、
前記支持体は、金属で形成された4本のリードを有し、
前記発光素子は、前記支持体の第1のリードに載置され、
前記温度センサの基板部分は、前記発光素子が載置される第1のリードの、前記発光素子からの光取出しを妨げない位置に載置され、
前記温度センサの電極部分は、前記支持体の第2および第3のリードに各々接続され、
前記発光素子は、導電性ワイヤを介して第4のリードと導通がとられ、
前記発光素子と前記温度センサが透光性樹脂により一体に封止されていることを特徴とする半導体発光装置。 - 前記温度センサにより検出された温度を制御する温度制御素子を備えた請求項1に記載の半導体発光装置。
- 前記発光素子の駆動回路と、前記温度センサの駆動回路と、前記温度制御素子の駆動回路は、各々独立して外部と電気的に接続される請求項2に記載の半導体発光装置。
- 前記支持体と前記温度制御素子は、押止されて接している請求項2または3に記載の半導体発光装置。
- 前記温度制御素子はペルチェ素子である請求項2乃至4のいずれか1項に記載の半導体発光装置。
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JP2006114255A JP4984621B2 (ja) | 2006-04-18 | 2006-04-18 | 半導体発光装置 |
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JP2006114255A JP4984621B2 (ja) | 2006-04-18 | 2006-04-18 | 半導体発光装置 |
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JP2007287962A JP2007287962A (ja) | 2007-11-01 |
JP4984621B2 true JP4984621B2 (ja) | 2012-07-25 |
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CN102299248B (zh) * | 2010-06-25 | 2014-04-23 | 惟昌企业股份有限公司 | Led封装支架改良制造方法及由此制得的封装结构 |
KR101687209B1 (ko) * | 2014-12-04 | 2016-12-19 | 인텍엘앤이 주식회사 | 서미스터 내장형 엘이디 패키지 및 그 제조방법 |
CN117425817A (zh) * | 2021-07-02 | 2024-01-19 | 株式会社日立高新技术 | 光源及自动分析装置 |
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JPS5927568A (ja) * | 1982-08-06 | 1984-02-14 | Mitsubishi Electric Corp | 半導体素子 |
JPS6450460U (ja) * | 1987-09-22 | 1989-03-29 | ||
JPH0381655U (ja) * | 1989-12-12 | 1991-08-21 | ||
JP2975160B2 (ja) * | 1991-05-27 | 1999-11-10 | 三菱化学株式会社 | 発光スペクトル制御システム |
JP2000261089A (ja) * | 1999-03-09 | 2000-09-22 | Fuji Photo Film Co Ltd | 半導体レーザー |
JP2000261039A (ja) * | 1999-03-12 | 2000-09-22 | Mitsubishi Electric Corp | 光源装置 |
JP4387152B2 (ja) * | 2003-10-10 | 2009-12-16 | リコー光学株式会社 | 光源装置 |
JP2005332951A (ja) * | 2004-05-19 | 2005-12-02 | Toyoda Gosei Co Ltd | 発光装置 |
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