JP4982728B2 - 単一電子素子の製造方法 - Google Patents
単一電子素子の製造方法 Download PDFInfo
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- JP4982728B2 JP4982728B2 JP2004107736A JP2004107736A JP4982728B2 JP 4982728 B2 JP4982728 B2 JP 4982728B2 JP 2004107736 A JP2004107736 A JP 2004107736A JP 2004107736 A JP2004107736 A JP 2004107736A JP 4982728 B2 JP4982728 B2 JP 4982728B2
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- electronic device
- single electronic
- manufacturing
- insulating film
- organic molecules
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 239000002052 molecular layer Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- IOGIAQRGSSTQFD-UHFFFAOYSA-N 21,23-ditert-butyl-2-phenylporphyrin Chemical compound C(C)(C)(C)N1C=2C=CC1=CC=1C=CC(=CC3=CC(=C(N3C(C)(C)C)C=C3C=CC(C=2)=N3)C2=CC=CC=C2)N=1 IOGIAQRGSSTQFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 14
- 230000005641 tunneling Effects 0.000 description 13
- 150000004032 porphyrins Chemical class 0.000 description 12
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 229910003472 fullerene Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- -1 butylphenyl groups Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000412 dendrimer Substances 0.000 description 2
- 229920000736 dendritic polymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000003863 physical function Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- YNHJECZULSZAQK-UHFFFAOYSA-N tetraphenylporphyrin Chemical compound C1=CC(C(=C2C=CC(N2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3N2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 YNHJECZULSZAQK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
で表わされるテトラキス−3,5ジ−ターシャリ−ブチルフェニル−ポルフィリン(H 2 −TBPP)であることを特徴とする単一電子素子の製造方法を提供する。
さらに、第4には、上記の絶縁性膜が、SiO2、CaF2又はAl2O3であることを特徴とする単一電子素子の製造方法を、第5には、上記の基板が、Si、GaAs、SiC、Geのいずれかの半導体材料、又はAu、Ag、Cuのいずれかの金属材料であることを特徴とする単一電子素子の製造方法を提供する。
基板はSi(100)ウエーハを用い、超高真空チャンバ−内でアニ−ルを行い、洗浄した。次にシリコン基板上に真空中で連続蒸着させてSiO2/ポルフィリン分子(H2−TBPP)/SiO2の積層構造を作製し、最後に積層構造上部にAu電極をマスクを通して成膜した。測定は2端子法を用い、クライオスタット中、絶対温度5Kにおいて、ステップ電圧を印加して電流計で電流を測定した。その電圧−電流特性を測定したところ、規則的な階段状の特性が得られた。この結果を図1に示した。
(実施例2)
実施例1において、有機分子のポルフィリン分子(H2−TBPP)をC60フラーレンに代えて単一電子素子を作製した。
Claims (5)
- 蒸着可能な有機分子によって微小トンネリング接合が形成され、光応答性を備えている単一電子素子の製造方法であって、基板上に真空中で順次、絶縁性膜、前記有機分子、絶縁性膜を蒸着させて積層構造を形成し、この積層構造上部に電極を形成する方法であり、前記有機分子は、下記式
で表わされるテトラキス−3,5ジ−ターシャリ−ブチルフェニル−ポルフィリン(H 2 −TBPP)であることを特徴とする単一電子素子の製造方法。 - 有機分子の蒸着量が、0.001分子層〜1分子層であることを特徴とする請求項1に記載の単一電子素子の製造方法。
- 絶縁性膜の膜厚を1.0〜3.0nmにすることを特徴とする請求項1又は2に記載の単一電子素子の製造方法。
- 絶縁性膜が、SiO 2 、CaF 2 又はAl 2 O 3 であることを特徴とする請求項1から3のいずれか一項に記載の単一電子素子の製造方法。
- 基板が、Si、GaAs、SiC、Geのいずれかの半導体材料、又はAu、Ag、Cuのいずれかの金属材料であることを特徴とする請求項1から4のいずれか一項に記載の単一電子素子の製造方法。
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JP2004107736A JP4982728B2 (ja) | 2004-03-31 | 2004-03-31 | 単一電子素子の製造方法 |
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JP2004107736A JP4982728B2 (ja) | 2004-03-31 | 2004-03-31 | 単一電子素子の製造方法 |
Publications (2)
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JP2005294543A JP2005294543A (ja) | 2005-10-20 |
JP4982728B2 true JP4982728B2 (ja) | 2012-07-25 |
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JP2004107736A Expired - Lifetime JP4982728B2 (ja) | 2004-03-31 | 2004-03-31 | 単一電子素子の製造方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5476561B2 (ja) * | 2009-02-25 | 2014-04-23 | 独立行政法人物質・材料研究機構 | 新規なジブロック共重合体、及びそのジブロック共重合体の自己集合で形成される高移動度・光伝導性異方性ナノワイヤ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5420746A (en) * | 1993-04-13 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Army | Single electron device including clusters of pure carbon atoms |
JP3149718B2 (ja) * | 1995-02-03 | 2001-03-26 | 松下電器産業株式会社 | 単電子トランジスタ |
JP2903016B1 (ja) * | 1998-03-17 | 1999-06-07 | 科学技術振興事業団 | 分子単電子トランジスタ及び集積回路 |
WO2001013432A1 (en) * | 1999-08-18 | 2001-02-22 | North Carolina State University | Sensing devices using chemically-gated single electron transistors |
JP2001267552A (ja) * | 2000-03-14 | 2001-09-28 | Communication Research Laboratory | 単一電子トンネル素子 |
JP2003300982A (ja) * | 2002-04-10 | 2003-10-21 | Communication Research Laboratory | 分子集合体、及び分子集合体の製造方法 |
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2004
- 2004-03-31 JP JP2004107736A patent/JP4982728B2/ja not_active Expired - Lifetime
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