JP4980038B2 - 保護膜形成用材料及びホトレジストパターンの形成方法 - Google Patents

保護膜形成用材料及びホトレジストパターンの形成方法 Download PDF

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Publication number
JP4980038B2
JP4980038B2 JP2006338855A JP2006338855A JP4980038B2 JP 4980038 B2 JP4980038 B2 JP 4980038B2 JP 2006338855 A JP2006338855 A JP 2006338855A JP 2006338855 A JP2006338855 A JP 2006338855A JP 4980038 B2 JP4980038 B2 JP 4980038B2
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JP
Japan
Prior art keywords
protective film
forming
photoresist
film
photoresist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006338855A
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English (en)
Japanese (ja)
Other versions
JP2008112123A (ja
Inventor
寿一 高山
啓太 石塚
英夫 羽田
滋 横井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2006338855A priority Critical patent/JP4980038B2/ja
Priority to PCT/JP2007/067887 priority patent/WO2008035620A1/ja
Priority to US12/441,514 priority patent/US8097397B2/en
Priority to KR1020097004734A priority patent/KR101085371B1/ko
Priority to TW096134995A priority patent/TW200834244A/zh
Publication of JP2008112123A publication Critical patent/JP2008112123A/ja
Application granted granted Critical
Publication of JP4980038B2 publication Critical patent/JP4980038B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2006338855A 2006-09-20 2006-12-15 保護膜形成用材料及びホトレジストパターンの形成方法 Active JP4980038B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006338855A JP4980038B2 (ja) 2006-09-20 2006-12-15 保護膜形成用材料及びホトレジストパターンの形成方法
PCT/JP2007/067887 WO2008035620A1 (en) 2006-09-20 2007-09-13 Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film
US12/441,514 US8097397B2 (en) 2006-09-20 2007-09-13 Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film
KR1020097004734A KR101085371B1 (ko) 2006-09-20 2007-09-13 보호막 형성용 재료, 포토 레지스트 패턴의 형성 방법, 및 보호막 세정 제거액
TW096134995A TW200834244A (en) 2006-09-20 2007-09-19 Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2006254475 2006-09-20
JP2006254475 2006-09-20
JP2006274825 2006-10-06
JP2006274825 2006-10-06
JP2006338855A JP4980038B2 (ja) 2006-09-20 2006-12-15 保護膜形成用材料及びホトレジストパターンの形成方法

Publications (2)

Publication Number Publication Date
JP2008112123A JP2008112123A (ja) 2008-05-15
JP4980038B2 true JP4980038B2 (ja) 2012-07-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006338855A Active JP4980038B2 (ja) 2006-09-20 2006-12-15 保護膜形成用材料及びホトレジストパターンの形成方法

Country Status (5)

Country Link
US (1) US8097397B2 (enExample)
JP (1) JP4980038B2 (enExample)
KR (1) KR101085371B1 (enExample)
TW (1) TW200834244A (enExample)
WO (1) WO2008035620A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5311331B2 (ja) * 2008-06-25 2013-10-09 ルネサスエレクトロニクス株式会社 液浸リソグラフィの現像処理方法および該現像処理方法を用いた電子デバイス
TW201128324A (en) * 2009-10-27 2011-08-16 Dongjin Semichem Co Ltd Composition for forming protective layer on photoresist pattern
JP5593075B2 (ja) * 2010-01-13 2014-09-17 富士フイルム株式会社 パターン形成方法、パターン、化学増幅型レジスト組成物及びレジスト膜
JP5488241B2 (ja) * 2010-06-18 2014-05-14 信越化学工業株式会社 合成石英ガラス基板の処理方法
KR101756253B1 (ko) * 2013-01-31 2017-07-10 후지필름 가부시키가이샤 패턴형성방법, 이들을 사용한 전자 디바이스의 제조방법, 및 전자 디바이스
WO2022158172A1 (ja) * 2021-01-20 2022-07-28 旭化成株式会社 フレキソ印刷版用感光性樹脂構成体、及びフレキソ印刷版の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
JPS6038821A (ja) 1983-08-12 1985-02-28 Hitachi Ltd エッチング方法
DE3600116A1 (de) 1986-01-04 1987-07-09 Basf Ag Verfahren zur herstellung von durch photopolymerisation vernetzten reliefformen
JP2616091B2 (ja) 1990-01-29 1997-06-04 日本電気株式会社 半導体装置の製造方法
JP3158710B2 (ja) * 1992-09-16 2001-04-23 日本ゼオン株式会社 化学増幅レジストパターンの形成方法
US6004720A (en) * 1993-12-28 1999-12-21 Fujitsu Limited Radiation sensitive material and method for forming pattern
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
TW200424767A (en) 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP5301070B2 (ja) 2004-02-16 2013-09-25 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4683887B2 (ja) * 2004-09-13 2011-05-18 セントラル硝子株式会社 ラクトン化合物、ラクトン含有単量体、高分子化合物、それを用いたレジスト材料及びパターン形成方法
US7205093B2 (en) * 2005-06-03 2007-04-17 International Business Machines Corporation Topcoats for use in immersion lithography
US7473749B2 (en) * 2005-06-23 2009-01-06 International Business Machines Corporation Preparation of topcoat compositions and methods of use thereof
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5055743B2 (ja) * 2005-11-04 2012-10-24 セントラル硝子株式会社 含フッ素高分子コーティング用組成物、該コーティング用組成物を用いた含フッ素高分子膜の形成方法、ならびにフォトレジストまたはリソグラフィーパターンの形成方法。
JP2007241270A (ja) * 2006-02-10 2007-09-20 Tokyo Ohka Kogyo Co Ltd 保護膜除去用溶剤およびこれを用いたホトレジストパターン形成方法

Also Published As

Publication number Publication date
JP2008112123A (ja) 2008-05-15
WO2008035620A1 (en) 2008-03-27
KR101085371B1 (ko) 2011-11-21
TW200834244A (en) 2008-08-16
US8097397B2 (en) 2012-01-17
US20100086879A1 (en) 2010-04-08
KR20090046926A (ko) 2009-05-11
TWI379166B (enExample) 2012-12-11

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