JP4980038B2 - 保護膜形成用材料及びホトレジストパターンの形成方法 - Google Patents
保護膜形成用材料及びホトレジストパターンの形成方法 Download PDFInfo
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- JP4980038B2 JP4980038B2 JP2006338855A JP2006338855A JP4980038B2 JP 4980038 B2 JP4980038 B2 JP 4980038B2 JP 2006338855 A JP2006338855 A JP 2006338855A JP 2006338855 A JP2006338855 A JP 2006338855A JP 4980038 B2 JP4980038 B2 JP 4980038B2
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- protective film
- forming
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006338855A JP4980038B2 (ja) | 2006-09-20 | 2006-12-15 | 保護膜形成用材料及びホトレジストパターンの形成方法 |
| KR1020097004734A KR101085371B1 (ko) | 2006-09-20 | 2007-09-13 | 보호막 형성용 재료, 포토 레지스트 패턴의 형성 방법, 및 보호막 세정 제거액 |
| US12/441,514 US8097397B2 (en) | 2006-09-20 | 2007-09-13 | Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film |
| PCT/JP2007/067887 WO2008035620A1 (en) | 2006-09-20 | 2007-09-13 | Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film |
| TW096134995A TW200834244A (en) | 2006-09-20 | 2007-09-19 | Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006254475 | 2006-09-20 | ||
| JP2006254475 | 2006-09-20 | ||
| JP2006274825 | 2006-10-06 | ||
| JP2006274825 | 2006-10-06 | ||
| JP2006338855A JP4980038B2 (ja) | 2006-09-20 | 2006-12-15 | 保護膜形成用材料及びホトレジストパターンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008112123A JP2008112123A (ja) | 2008-05-15 |
| JP4980038B2 true JP4980038B2 (ja) | 2012-07-18 |
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Family Applications (1)
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| JP2006338855A Active JP4980038B2 (ja) | 2006-09-20 | 2006-12-15 | 保護膜形成用材料及びホトレジストパターンの形成方法 |
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|---|---|
| US (1) | US8097397B2 (enExample) |
| JP (1) | JP4980038B2 (enExample) |
| KR (1) | KR101085371B1 (enExample) |
| TW (1) | TW200834244A (enExample) |
| WO (1) | WO2008035620A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5311331B2 (ja) * | 2008-06-25 | 2013-10-09 | ルネサスエレクトロニクス株式会社 | 液浸リソグラフィの現像処理方法および該現像処理方法を用いた電子デバイス |
| TW201128324A (en) * | 2009-10-27 | 2011-08-16 | Dongjin Semichem Co Ltd | Composition for forming protective layer on photoresist pattern |
| JP5593075B2 (ja) * | 2010-01-13 | 2014-09-17 | 富士フイルム株式会社 | パターン形成方法、パターン、化学増幅型レジスト組成物及びレジスト膜 |
| JP5488241B2 (ja) * | 2010-06-18 | 2014-05-14 | 信越化学工業株式会社 | 合成石英ガラス基板の処理方法 |
| KR101756253B1 (ko) * | 2013-01-31 | 2017-07-10 | 후지필름 가부시키가이샤 | 패턴형성방법, 이들을 사용한 전자 디바이스의 제조방법, 및 전자 디바이스 |
| JP7474875B2 (ja) * | 2021-01-20 | 2024-04-25 | 旭化成株式会社 | フレキソ印刷版用感光性樹脂構成体、及びフレキソ印刷版の製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910122A (en) | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
| JPS6038821A (ja) | 1983-08-12 | 1985-02-28 | Hitachi Ltd | エッチング方法 |
| DE3600116A1 (de) | 1986-01-04 | 1987-07-09 | Basf Ag | Verfahren zur herstellung von durch photopolymerisation vernetzten reliefformen |
| JP2616091B2 (ja) | 1990-01-29 | 1997-06-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3158710B2 (ja) * | 1992-09-16 | 2001-04-23 | 日本ゼオン株式会社 | 化学増幅レジストパターンの形成方法 |
| US6004720A (en) * | 1993-12-28 | 1999-12-21 | Fujitsu Limited | Radiation sensitive material and method for forming pattern |
| JP4434762B2 (ja) | 2003-01-31 | 2010-03-17 | 東京応化工業株式会社 | レジスト組成物 |
| TW200424767A (en) | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
| JP5301070B2 (ja) | 2004-02-16 | 2013-09-25 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法 |
| JP4355944B2 (ja) * | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
| JP4683887B2 (ja) * | 2004-09-13 | 2011-05-18 | セントラル硝子株式会社 | ラクトン化合物、ラクトン含有単量体、高分子化合物、それを用いたレジスト材料及びパターン形成方法 |
| US7205093B2 (en) * | 2005-06-03 | 2007-04-17 | International Business Machines Corporation | Topcoats for use in immersion lithography |
| US7473749B2 (en) * | 2005-06-23 | 2009-01-06 | International Business Machines Corporation | Preparation of topcoat compositions and methods of use thereof |
| JP4684139B2 (ja) * | 2005-10-17 | 2011-05-18 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
| JP5055743B2 (ja) * | 2005-11-04 | 2012-10-24 | セントラル硝子株式会社 | 含フッ素高分子コーティング用組成物、該コーティング用組成物を用いた含フッ素高分子膜の形成方法、ならびにフォトレジストまたはリソグラフィーパターンの形成方法。 |
| JP2007241270A (ja) * | 2006-02-10 | 2007-09-20 | Tokyo Ohka Kogyo Co Ltd | 保護膜除去用溶剤およびこれを用いたホトレジストパターン形成方法 |
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2006
- 2006-12-15 JP JP2006338855A patent/JP4980038B2/ja active Active
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2007
- 2007-09-13 KR KR1020097004734A patent/KR101085371B1/ko active Active
- 2007-09-13 US US12/441,514 patent/US8097397B2/en active Active
- 2007-09-13 WO PCT/JP2007/067887 patent/WO2008035620A1/ja not_active Ceased
- 2007-09-19 TW TW096134995A patent/TW200834244A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090046926A (ko) | 2009-05-11 |
| TWI379166B (enExample) | 2012-12-11 |
| KR101085371B1 (ko) | 2011-11-21 |
| US20100086879A1 (en) | 2010-04-08 |
| TW200834244A (en) | 2008-08-16 |
| US8097397B2 (en) | 2012-01-17 |
| WO2008035620A1 (en) | 2008-03-27 |
| JP2008112123A (ja) | 2008-05-15 |
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