JP4977411B2 - レーザー加工装置 - Google Patents
レーザー加工装置 Download PDFInfo
- Publication number
- JP4977411B2 JP4977411B2 JP2006186327A JP2006186327A JP4977411B2 JP 4977411 B2 JP4977411 B2 JP 4977411B2 JP 2006186327 A JP2006186327 A JP 2006186327A JP 2006186327 A JP2006186327 A JP 2006186327A JP 4977411 B2 JP4977411 B2 JP 4977411B2
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- Prior art keywords
- laser beam
- light
- light receiving
- reflected light
- processing
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- 239000004065 semiconductor Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 11
- 230000001276 controlling effect Effects 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 8
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- 238000009434 installation Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
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- 230000000149 penetrating effect Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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Images
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- Laser Beam Processing (AREA)
- Dicing (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006186327A JP4977411B2 (ja) | 2006-07-06 | 2006-07-06 | レーザー加工装置 |
TW096124349A TWI413173B (zh) | 2006-07-06 | 2007-07-04 | Laser processing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006186327A JP4977411B2 (ja) | 2006-07-06 | 2006-07-06 | レーザー加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008012566A JP2008012566A (ja) | 2008-01-24 |
JP4977411B2 true JP4977411B2 (ja) | 2012-07-18 |
Family
ID=39070115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006186327A Active JP4977411B2 (ja) | 2006-07-06 | 2006-07-06 | レーザー加工装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4977411B2 (zh) |
TW (1) | TWI413173B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5117920B2 (ja) * | 2008-04-28 | 2013-01-16 | 株式会社ディスコ | レーザー加工装置 |
JP5243098B2 (ja) | 2008-05-09 | 2013-07-24 | 株式会社ディスコ | レーザー加工装置 |
JP5199789B2 (ja) * | 2008-08-25 | 2013-05-15 | 株式会社ディスコ | レーザー加工装置及びレーザー加工方法 |
JP5221254B2 (ja) * | 2008-08-28 | 2013-06-26 | 株式会社ディスコ | レーザー加工装置 |
JP5851784B2 (ja) * | 2011-09-28 | 2016-02-03 | 株式会社ディスコ | 高さ位置検出装置およびレーザー加工機 |
JP5902540B2 (ja) * | 2012-04-02 | 2016-04-13 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
TWI555599B (zh) * | 2013-02-25 | 2016-11-01 | 先進科技新加坡有限公司 | 在雷射劃刻裝置中執行光束特徵化之方法,及可執行此方法之雷射劃刻裝置 |
JP6250329B2 (ja) | 2013-08-19 | 2017-12-20 | 株式会社ディスコ | 加工装置 |
JP6345928B2 (ja) | 2013-11-18 | 2018-06-20 | 株式会社ディスコ | 検出装置 |
JP6215666B2 (ja) * | 2013-11-19 | 2017-10-18 | 株式会社ディスコ | 加工装置 |
CN117881215A (zh) | 2013-12-02 | 2024-04-12 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
JP2015200537A (ja) * | 2014-04-07 | 2015-11-12 | 株式会社ディスコ | 凹凸検出装置 |
KR20170017019A (ko) * | 2015-07-09 | 2017-02-15 | 주식회사 이오테크닉스 | 집광점 검출장치 |
KR20170015866A (ko) * | 2015-07-09 | 2017-02-10 | 주식회사 이오테크닉스 | 레이저 가공장치 |
JP6831253B2 (ja) * | 2017-01-27 | 2021-02-17 | 株式会社ディスコ | レーザー加工装置 |
JP7043124B2 (ja) * | 2017-09-22 | 2022-03-29 | 株式会社ディスコ | ウェーハの加工方法 |
JP7325897B2 (ja) * | 2019-04-18 | 2023-08-15 | 株式会社ディスコ | 加工装置及び被加工物の加工方法 |
JP7515336B2 (ja) | 2020-07-31 | 2024-07-12 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62244588A (ja) * | 1986-04-18 | 1987-10-24 | Nec Corp | 自動焦点機構 |
JP3169354B2 (ja) * | 1998-12-10 | 2001-05-21 | 川崎重工業株式会社 | レーザ溶接加工モニタリング装置 |
JP2001334376A (ja) * | 2000-05-26 | 2001-12-04 | Nec Toyama Ltd | レーザ加工装置及びレーザ光スポット位置補正方法 |
JP2004188422A (ja) * | 2002-12-06 | 2004-07-08 | Hamamatsu Photonics Kk | レーザ加工装置及びレーザ加工方法 |
JP2005021916A (ja) * | 2003-06-30 | 2005-01-27 | Olympus Corp | 欠陥修正機能付き顕微鏡装置 |
JP4601965B2 (ja) * | 2004-01-09 | 2010-12-22 | 浜松ホトニクス株式会社 | レーザ加工方法及びレーザ加工装置 |
JP2005297012A (ja) * | 2004-04-13 | 2005-10-27 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP4299185B2 (ja) * | 2004-04-27 | 2009-07-22 | 株式会社ディスコ | レーザー加工装置 |
JP2006159254A (ja) * | 2004-12-07 | 2006-06-22 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP4734101B2 (ja) * | 2005-11-30 | 2011-07-27 | 株式会社ディスコ | レーザー加工装置 |
-
2006
- 2006-07-06 JP JP2006186327A patent/JP4977411B2/ja active Active
-
2007
- 2007-07-04 TW TW096124349A patent/TWI413173B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2008012566A (ja) | 2008-01-24 |
TWI413173B (zh) | 2013-10-21 |
TW200823985A (en) | 2008-06-01 |
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