JP4974130B2 - 電離放射線を検出する装置 - Google Patents

電離放射線を検出する装置 Download PDF

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Publication number
JP4974130B2
JP4974130B2 JP2005021073A JP2005021073A JP4974130B2 JP 4974130 B2 JP4974130 B2 JP 4974130B2 JP 2005021073 A JP2005021073 A JP 2005021073A JP 2005021073 A JP2005021073 A JP 2005021073A JP 4974130 B2 JP4974130 B2 JP 4974130B2
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Japan
Prior art keywords
layer
photodiode
assembly
electrical
signal
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Expired - Lifetime
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JP2005021073A
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English (en)
Japanese (ja)
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JP2005229110A5 (enExample
JP2005229110A (ja
Inventor
デビッド・マイケル・ホフマン
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GE Medical Systems Global Technology Co LLC
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GE Medical Systems Global Technology Co LLC
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005021073A 2004-01-29 2005-01-28 電離放射線を検出する装置 Expired - Lifetime JP4974130B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,984 2004-01-29
US10/707,984 US7075091B2 (en) 2004-01-29 2004-01-29 Apparatus for detecting ionizing radiation

Publications (3)

Publication Number Publication Date
JP2005229110A JP2005229110A (ja) 2005-08-25
JP2005229110A5 JP2005229110A5 (enExample) 2011-03-17
JP4974130B2 true JP4974130B2 (ja) 2012-07-11

Family

ID=34749170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005021073A Expired - Lifetime JP4974130B2 (ja) 2004-01-29 2005-01-28 電離放射線を検出する装置

Country Status (6)

Country Link
US (1) US7075091B2 (enExample)
JP (1) JP4974130B2 (enExample)
CN (1) CN1648687A (enExample)
DE (1) DE102005003378A1 (enExample)
IL (1) IL166392A (enExample)
NL (1) NL1028105C2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101166469B (zh) * 2005-04-26 2015-05-06 皇家飞利浦电子股份有限公司 用于光谱ct的双层探测器
US7582879B2 (en) * 2006-03-27 2009-09-01 Analogic Corporation Modular x-ray measurement system
CA2647407A1 (en) * 2006-03-30 2007-10-18 Koninklijke Philips Electronics N.V. Radiation detector array
US20080001246A1 (en) * 2006-05-24 2008-01-03 Dipak Sengupta Single package detector and digital converter integration
DE102006046770A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Bauelement, Bauteil und Verfahren zu dessen Herstellung
US7606346B2 (en) * 2007-01-04 2009-10-20 General Electric Company CT detector module construction
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
CN102365562B (zh) * 2009-03-26 2014-07-16 皇家飞利浦电子股份有限公司 数据采集
JP5450188B2 (ja) * 2010-03-16 2014-03-26 株式会社東芝 放射線検出装置、放射線検出装置の製造方法および画像撮影装置
JP5358509B2 (ja) * 2010-04-15 2013-12-04 浜松ホトニクス株式会社 放射線検出器モジュール
US9022584B2 (en) * 2010-11-24 2015-05-05 Raytheon Company Protecting an optical surface
EP2689269B1 (en) 2011-03-24 2015-05-13 Koninklijke Philips N.V. Production of a spectral imaging detector
US8822262B2 (en) 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
WO2014184714A1 (en) 2013-05-16 2014-11-20 Koninklijke Philips N.V. Imaging detector
CN104603640B (zh) * 2013-09-05 2018-03-30 皇家飞利浦有限公司 辐射探测器元件
JP6776024B2 (ja) * 2016-06-30 2020-10-28 キヤノンメディカルシステムズ株式会社 Ｘ線検出器、ｘ線検出器モジュール、支持部材及びｘ線ｃｔ装置
CN109541668B (zh) * 2018-12-03 2020-05-22 西安交通大学 一种无电源辐射监测装置及方法
CN115112693A (zh) * 2022-06-24 2022-09-27 明峰医疗系统股份有限公司 一种ct探测器及ct设备

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294760A (ja) * 1999-04-07 2000-10-20 Nikon Corp 光検出素子
US6512809B2 (en) * 2000-05-02 2003-01-28 Siemens Aktiengesellschaft Radiation detector for an X-ray computed tomography apparatus
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6658082B2 (en) * 2000-08-14 2003-12-02 Kabushiki Kaisha Toshiba Radiation detector, radiation detecting system and X-ray CT apparatus
US6426991B1 (en) * 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
JP2003017676A (ja) * 2001-04-27 2003-01-17 Canon Inc 放射線撮像装置およびそれを用いた放射線撮像システム
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6707046B2 (en) 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination
JP4237966B2 (ja) * 2002-03-08 2009-03-11 浜松ホトニクス株式会社 検出器
US6933489B2 (en) * 2002-05-10 2005-08-23 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same
JP4123415B2 (ja) * 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
DE10244177A1 (de) * 2002-09-23 2004-04-08 Siemens Ag Bilddetektor für Röntgeneinrichtungen mit rückseitig kontaktierten, organischen Bild-Sensoren
US6762473B1 (en) * 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods

Also Published As

Publication number Publication date
NL1028105A1 (nl) 2005-08-01
US20050167603A1 (en) 2005-08-04
US7075091B2 (en) 2006-07-11
NL1028105C2 (nl) 2008-02-25
IL166392A (en) 2009-07-20
CN1648687A (zh) 2005-08-03
DE102005003378A1 (de) 2005-08-11
IL166392A0 (en) 2006-01-15
JP2005229110A (ja) 2005-08-25

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