JP4960577B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP4960577B2 JP4960577B2 JP2003541058A JP2003541058A JP4960577B2 JP 4960577 B2 JP4960577 B2 JP 4960577B2 JP 2003541058 A JP2003541058 A JP 2003541058A JP 2003541058 A JP2003541058 A JP 2003541058A JP 4960577 B2 JP4960577 B2 JP 4960577B2
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- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 23
- 239000000463 material Substances 0.000 claims description 138
- 238000000576 coating method Methods 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000005259 measurement Methods 0.000 claims description 24
- 239000011888 foil Substances 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000010924 continuous production Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 230000004913 activation Effects 0.000 description 12
- 239000012530 fluid Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 238000009503 electrostatic coating Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000010410 dusting Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Description
他の実施形態では、複数の発光デバイスは、ウェハ上の複数の発光デバイスである。
なお、本発明は、本明細書に記載されている実施形態に限定されるものとして構成されるべきではない。むしろ、これらの実施形態は、本開示が十分かつ完全で、本発明の範囲を当業者に十分に伝えるように提示される。図には、理解しやすいように、層及び領域の厚さを誇張している。また、全体を通じて、同じ構成要素には同一の番号を付してある。
Claims (6)
- 複数の半導体発光デバイスのそれぞれの光出力を測定するステップと、
前記半導体発光デバイスの電気特性ではなく、前記半導体発光デバイスの前記測定光出力特性に基づいて前記半導体発光デバイスを分類するステップであって、前記半導体発光デバイスを、各グループの半導体発光デバイスが類似の測定光出力特性を有するような複数のグループにグループ化するステップと、
第1の量をすべての半導体発光デバイスに塗布する第1の工程と、選択されたグループの半導体発光デバイスに追加的な量を塗布又は選択されたグループの半導体発光デバイスから追加的な量を削除する第2の工程とを含む連続的な工程によって、前記半導体発光デバイスのそれぞれのグループに対して共通して発光物質を選択的に調整するステップと
を有することを特徴とする発光装置の製造方法。 - 前記複数の半導体発光デバイスのそれぞれの光出力を測定するステップは、
前記複数の半導体発光デバイスのそれぞれを活性化するステップと、
前記半導体発光デバイスのそれぞれを活性化するときに前記複数の半導体発光デバイスのそれぞれの光出力を測定するステップと
を有することを特徴とする請求項1に記載の発光装置の製造方法。 - 前記複数の半導体発光デバイスのそれぞれは、前記デバイスの片側から接触可能な2つの接触面を有し、
前記複数の半導体発光デバイスのそれぞれを活性化するステップは、
前記複数の半導体発光デバイスのそれぞれを導電性の箔に配置するステップと、
前記複数の半導体発光デバイスのそれぞれに前記箔を通じて接触するステップと
を有することを特徴とする請求項2に記載の発光装置の製造方法。 - 前記発光物質を調整するステップに続けて、
さらに、前記それぞれのグループにおける前記半導体発光デバイスの光出力を測定し、
前記半導体発光デバイスのそれぞれのグループに対して共通して発光物質を調整し、
前記それぞれのグループにおける所定の光出力基準が達成されるまで、前記半導体発光デバイスの光出力の測定と調整を繰り返すことを特徴とする請求項1に記載の発光装置の製造方法。 - 前記所定の光出力基準は、前記複数の半導体発光デバイスの実質的に均一な光出力を含むことを特徴とする請求項4に記載の発光装置の製造方法。
- 前記複数の半導体発光デバイスのそれぞれの光出力を測定するステップに先立って、発光物質の共通の被膜を前記複数の半導体発光デバイスに塗布することを特徴とする請求項1に記載の発光装置の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33564901P | 2001-10-31 | 2001-10-31 | |
US60/335,649 | 2001-10-31 | ||
US10/267,093 US7858403B2 (en) | 2001-10-31 | 2002-10-04 | Methods and systems for fabricating broad spectrum light emitting devices |
US10/267,093 | 2002-10-04 | ||
PCT/US2002/034484 WO2003038902A2 (en) | 2001-10-31 | 2002-10-28 | Broad spectrum light emitting devices and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005508093A JP2005508093A (ja) | 2005-03-24 |
JP4960577B2 true JP4960577B2 (ja) | 2012-06-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003541058A Expired - Lifetime JP4960577B2 (ja) | 2001-10-31 | 2002-10-28 | 発光装置の製造方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US7858403B2 (ja) |
EP (1) | EP1446838B1 (ja) |
JP (1) | JP4960577B2 (ja) |
KR (1) | KR20050042005A (ja) |
AU (1) | AU2002340310A1 (ja) |
CA (1) | CA2464141A1 (ja) |
MY (1) | MY148153A (ja) |
TW (1) | TW200303623A (ja) |
WO (1) | WO2003038902A2 (ja) |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003152227A (ja) * | 2001-11-14 | 2003-05-23 | Citizen Electronics Co Ltd | Ledの色補正手段および色補正方法 |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
AT412928B (de) * | 2003-06-18 | 2005-08-25 | Guenther Dipl Ing Dr Leising | Verfahren zur herstellung einer weissen led sowie weisse led-lichtquelle |
US7518158B2 (en) | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
US8164250B2 (en) * | 2004-09-28 | 2012-04-24 | Koninklijke Philips Electronics N.V. | Light emitting device with improved conversion layer |
US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
CN101073155B (zh) * | 2004-12-06 | 2010-09-29 | 皇家飞利浦电子股份有限公司 | 作为小型颜色可变光源的单片led |
JP2007027278A (ja) * | 2005-07-13 | 2007-02-01 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2007067326A (ja) * | 2005-09-02 | 2007-03-15 | Shinko Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
US7765792B2 (en) * | 2005-10-21 | 2010-08-03 | Honeywell International Inc. | System for particulate matter sensor signal processing |
US8278846B2 (en) * | 2005-11-18 | 2012-10-02 | Cree, Inc. | Systems and methods for calibrating solid state lighting panels |
WO2007061815A1 (en) * | 2005-11-18 | 2007-05-31 | Cree, Inc. | Solid state lighting device |
US7926300B2 (en) | 2005-11-18 | 2011-04-19 | Cree, Inc. | Adaptive adjustment of light output of solid state lighting panels |
US8514210B2 (en) | 2005-11-18 | 2013-08-20 | Cree, Inc. | Systems and methods for calibrating solid state lighting panels using combined light output measurements |
US7614759B2 (en) | 2005-12-22 | 2009-11-10 | Cree Led Lighting Solutions, Inc. | Lighting device |
US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US8998444B2 (en) * | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
US7821194B2 (en) * | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
EP2027412B1 (en) | 2006-05-23 | 2018-07-04 | Cree, Inc. | Lighting device |
EP2033235B1 (en) | 2006-05-26 | 2017-06-21 | Cree, Inc. | Solid state light emitting device |
EP2035745B1 (en) * | 2006-05-31 | 2020-04-29 | IDEAL Industries Lighting LLC | Lighting device with color control, and method of lighting |
EP2111641B1 (en) | 2007-01-22 | 2017-08-30 | Cree, Inc. | Illumination devices using externally interconnected arrays of light emitting devices, and method of fabricating same |
WO2008091837A2 (en) * | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
US8456388B2 (en) * | 2007-02-14 | 2013-06-04 | Cree, Inc. | Systems and methods for split processor control in a solid state lighting panel |
US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
US7712917B2 (en) | 2007-05-21 | 2010-05-11 | Cree, Inc. | Solid state lighting panels with limited color gamut and methods of limiting color gamut in solid state lighting panels |
US9401461B2 (en) * | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
US10505083B2 (en) | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US20090033612A1 (en) * | 2007-07-31 | 2009-02-05 | Roberts John K | Correction of temperature induced color drift in solid state lighting displays |
US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
US8829820B2 (en) * | 2007-08-10 | 2014-09-09 | Cree, Inc. | Systems and methods for protecting display components from adverse operating conditions |
WO2009055079A1 (en) * | 2007-10-26 | 2009-04-30 | Cree Led Lighting Solutions, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
US9754926B2 (en) | 2011-01-31 | 2017-09-05 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9660153B2 (en) | 2007-11-14 | 2017-05-23 | Cree, Inc. | Gap engineering for flip-chip mounted horizontal LEDs |
US8866410B2 (en) * | 2007-11-28 | 2014-10-21 | Cree, Inc. | Solid state lighting devices and methods of manufacturing the same |
US8823630B2 (en) * | 2007-12-18 | 2014-09-02 | Cree, Inc. | Systems and methods for providing color management control in a lighting panel |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
US8940561B2 (en) * | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
US8877524B2 (en) * | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
US7955875B2 (en) * | 2008-09-26 | 2011-06-07 | Cree, Inc. | Forming light emitting devices including custom wavelength conversion structures |
US7897419B2 (en) * | 2008-12-23 | 2011-03-01 | Cree, Inc. | Color correction for wafer level white LEDs |
US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US8333631B2 (en) * | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
KR101558241B1 (ko) | 2009-03-30 | 2015-10-07 | 삼성전자 주식회사 | 발광 장치의 제조 방법 |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
US8679865B2 (en) | 2009-08-28 | 2014-03-25 | Samsung Electronics Co., Ltd. | Resin application apparatus, optical property correction apparatus and method, and method for manufacturing LED package |
CN102630288B (zh) | 2009-09-25 | 2015-09-09 | 科锐公司 | 具有低眩光和高亮度级均匀性的照明设备 |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
KR101650375B1 (ko) * | 2009-11-17 | 2016-08-24 | 주식회사 탑 엔지니어링 | 양자점 코팅을 이용한 발광 다이오드의 리페어 방법 및 장치 |
JP5657012B2 (ja) * | 2010-02-25 | 2015-01-21 | ライタイザー コリア カンパニー リミテッド | 発光ダイオード及びその製造方法 |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
JP5486688B2 (ja) * | 2010-09-15 | 2014-05-07 | ライタイザー コリア カンパニー リミテッド | 発光ダイオード及びその製造方法 |
JP5310700B2 (ja) * | 2010-10-27 | 2013-10-09 | パナソニック株式会社 | Ledパッケージ製造システムおよびledパッケージ製造システムにおける樹脂塗布方法 |
JP5310699B2 (ja) * | 2010-10-27 | 2013-10-09 | パナソニック株式会社 | 樹脂塗布装置および樹脂塗布方法 |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
DE102011012298A1 (de) | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips |
US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
US9831220B2 (en) | 2011-01-31 | 2017-11-28 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9673363B2 (en) | 2011-01-31 | 2017-06-06 | Cree, Inc. | Reflective mounting substrates for flip-chip mounted horizontal LEDs |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US9053958B2 (en) | 2011-01-31 | 2015-06-09 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9401103B2 (en) | 2011-02-04 | 2016-07-26 | Cree, Inc. | LED-array light source with aspect ratio greater than 1 |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
JP2012191144A (ja) * | 2011-03-14 | 2012-10-04 | Ns Materials Kk | Led素子、その製造方法、及びled素子の色調補正方法 |
US8637877B2 (en) | 2011-05-05 | 2014-01-28 | Cree, Inc. | Remote phosphor light emitting devices |
US9666764B2 (en) | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
US9653643B2 (en) | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
JP5899485B2 (ja) * | 2011-08-29 | 2016-04-06 | パナソニックIpマネジメント株式会社 | 樹脂塗布装置および樹脂塗布方法 |
DE102012106859B4 (de) * | 2012-07-27 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines mehrfarbigen LED-Displays |
DE102012108996A1 (de) * | 2012-09-24 | 2014-04-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Bauelemente und strahlungsemittierendes Bauelement |
DE102012112316A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Verfahren und Vorrichtung zur Herstellung eines Strahlung emittierenden Halbleiterbauelements und Strahlung emittierendes Halbleiterbauelement |
US8845380B2 (en) | 2012-12-17 | 2014-09-30 | Xicato, Inc. | Automated color tuning of an LED based illumination device |
US8870617B2 (en) * | 2013-01-03 | 2014-10-28 | Xicato, Inc. | Color tuning of a multi-color LED based illumination device |
DE102013205179A1 (de) | 2013-03-25 | 2014-09-25 | Osram Gmbh | Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
JP6435705B2 (ja) * | 2013-12-27 | 2018-12-12 | 日亜化学工業株式会社 | 集合基板、発光装置及び発光素子の検査方法 |
JP2016040842A (ja) * | 2015-11-04 | 2016-03-24 | Nsマテリアルズ株式会社 | Led素子、その製造方法、及びled素子の色調補正方法 |
JP7048888B2 (ja) | 2018-04-06 | 2022-04-06 | 日亜化学工業株式会社 | 光源装置の製造方法 |
KR102260326B1 (ko) * | 2019-11-07 | 2021-06-03 | 세메스 주식회사 | 양자점 경화 처리 장치 및 방법 그리고 양자점 도포 처리 장치 및 방법 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3910701A (en) * | 1973-07-30 | 1975-10-07 | George R Henderson | Method and apparatus for measuring light reflectance absorption and or transmission |
JPS6139541A (ja) | 1984-07-31 | 1986-02-25 | Nec Corp | 半導体装置の製造方法 |
US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5541525A (en) * | 1991-06-04 | 1996-07-30 | Micron Technology, Inc. | Carrier for testing an unpackaged semiconductor die |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
JP2755195B2 (ja) | 1994-12-08 | 1998-05-20 | 日本電気株式会社 | 半導体装置の製造方法及びその装置 |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
EP0856202A2 (en) | 1996-06-11 | 1998-08-05 | Koninklijke Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US5898185A (en) * | 1997-01-24 | 1999-04-27 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
JP3546650B2 (ja) | 1997-07-28 | 2004-07-28 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
US5998805A (en) * | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
JP2002523610A (ja) | 1998-08-27 | 2002-07-30 | スーペリア マイクロパウダーズ リミテッド ライアビリティ カンパニー | 蛍リン光粉体、蛍リン光粉体の製造方法、及び同粉体を使用した装置 |
JP3302332B2 (ja) * | 1998-10-22 | 2002-07-15 | キヤノン株式会社 | 露光装置及び画像形成装置 |
US6303916B1 (en) * | 1998-12-24 | 2001-10-16 | Mitutoyo Corporation | Systems and methods for generating reproducible illumination |
US6201264B1 (en) | 1999-01-14 | 2001-03-13 | Lumileds Lighting, U.S., Llc | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
JP4350232B2 (ja) | 1999-10-05 | 2009-10-21 | 株式会社朝日ラバー | 蛍光被覆体製造支援方法、及びその製造支援システム |
JP4045710B2 (ja) * | 1999-12-16 | 2008-02-13 | 松下電器産業株式会社 | 半導体発光装置の製造方法 |
US6538371B1 (en) | 2000-03-27 | 2003-03-25 | The General Electric Company | White light illumination system with improved color output |
US6590343B2 (en) * | 2000-06-06 | 2003-07-08 | 911Ep, Inc. | LED compensation circuit |
US6795459B2 (en) * | 2000-10-18 | 2004-09-21 | Fibera, Inc. | Light frequency locker |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
TW490863B (en) * | 2001-02-12 | 2002-06-11 | Arima Optoelectronics Corp | Manufacturing method of LED with uniform color temperature |
JP2002344029A (ja) * | 2001-05-17 | 2002-11-29 | Rohm Co Ltd | 発光ダイオードの色調調整方法 |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US6635503B2 (en) | 2002-01-28 | 2003-10-21 | Cree, Inc. | Cluster packaging of light emitting diodes |
ATE543221T1 (de) | 2002-09-19 | 2012-02-15 | Cree Inc | Leuchtstoffbeschichtete leuchtdioden mit verjüngten seitenwänden und herstellungsverfahren dafür |
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2002
- 2002-10-04 US US10/267,093 patent/US7858403B2/en not_active Expired - Lifetime
- 2002-10-28 WO PCT/US2002/034484 patent/WO2003038902A2/en active Application Filing
- 2002-10-28 KR KR1020047006263A patent/KR20050042005A/ko not_active Application Discontinuation
- 2002-10-28 AU AU2002340310A patent/AU2002340310A1/en not_active Abandoned
- 2002-10-28 CA CA002464141A patent/CA2464141A1/en not_active Abandoned
- 2002-10-28 EP EP02778659.9A patent/EP1446838B1/en not_active Expired - Lifetime
- 2002-10-28 JP JP2003541058A patent/JP4960577B2/ja not_active Expired - Lifetime
- 2002-10-30 TW TW091132160A patent/TW200303623A/zh unknown
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Also Published As
Publication number | Publication date |
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TW200303623A (en) | 2003-09-01 |
AU2002340310A1 (en) | 2003-05-12 |
KR20050042005A (ko) | 2005-05-04 |
US20110070668A1 (en) | 2011-03-24 |
WO2003038902A3 (en) | 2004-03-18 |
US7858403B2 (en) | 2010-12-28 |
US20030089918A1 (en) | 2003-05-15 |
US8476091B2 (en) | 2013-07-02 |
MY148153A (en) | 2013-03-15 |
EP1446838A2 (en) | 2004-08-18 |
US20110070669A1 (en) | 2011-03-24 |
CA2464141A1 (en) | 2003-05-08 |
EP1446838B1 (en) | 2018-11-21 |
WO2003038902A2 (en) | 2003-05-08 |
JP2005508093A (ja) | 2005-03-24 |
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